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1

Schottky Barrier Diodes (SBD)

MA2S784

Silicon epitaxial planar type

For super-high speed switching circuit

For small current rectification

I Features

• Super small SS-mini type 2-pin package

• Allowing high-density mounting

• Allowing to rectify under (I

F(AV)

 = 100 mA) condition

• Optimum for high-frequency rectification because of its short

reverse recovery time (t

rr

)

• Low V

F

 (forward rise voltage), with high rectification efficiency

I Absolute Maximum Ratings  T

a

 

= 25°C

Unit : mm

Marking Symbol: C

Note) * : The peak-to-peak value in one cycle of 50 Hz sine-wave (non-repetitive)

Parameter

Symbol

Rating

Unit

Reverse voltage (DC)

V

R

30

V

Repetitive peak reverse voltage

V

RRM

30

V

Peak forward current

I

FM

300

mA

Average forward current

I

F(AV)

100

mA

Non-repetitive peak forward

I

FSM

1

A

surge current

*

Junction temperature

T

j

125

°C

Storage temperature

T

stg

−55 to +125

°C

Parameter

Symbol

Conditions

Min

Typ

Max

Unit

Reverse current (DC)

I

R

V

R

 = 30 V

15

µA

Forward voltage (DC)

V

F

I

F

 = 100 mA

0.55

V

Terminal capacitance

C

t

V

R

 = 0 V, f = 1 MHz

20

pF

Reverse recovery time

*

t

rr

I

F

 = I

R

 = 100 mA

2.0

ns

I

rr

 = 10 mA, R

L

 = 100 Ω

I Electrical Characteristics  T

a

 

= 25°C

Note) 1. Schottky barrier diode is sensitive to electric shock (static electricity, etc.). Due attention must be paid on the charge of a

human body and the leakage of current from the operating equipment.

2. Rated input/output frequency: 250 MHz

3. * : t

rr

 measuring circuit

1 : Anode

2 : Cathode

SS-Mini Type Package (2-pin)

Bias Application Unit N-50BU

90%

Pulse Generator

(PG-10N)

R

s

 

= 50 Ω

W.F.Analyzer

(SAS-8130)

R

i

 

= 50 Ω

t

p

 

= 2 µs

t

r

 

= 0.35 ns

δ = 0.05

I

F

 

= 100 mA

I

R

 

= 100 mA

R

L

 

= 100 Ω

10%

Input Pulse

Output Pulse

I

rr

 

= 10 mA

t

r

t

p

t

rr

V

R

I

F

t

t

A

1.60 

± 0.05

1.20 

+ 0.05

− 0.03

0.30 

± 

0.05

0.15 

± 

0.05

0.6 

± 

0.05

0.80 

0.05

− 

0.03

( 0.2 )

1

2

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Schottky Barrier Diodes (SBD)

2

MA2S784

I

F

 

 V

F

I

R

 

 V

R

V

F

 

 T

a

C

t

 

 V

R

I

R

 

 T

a

10

−2

0

0.1

0.2

0.3

0.4

0.5

0.6

10

−1

1

10

10

2

10

3

Forward voltage   V

F

   (V)

Forward current   I

F

   

(mA

)

T

a

 = 125°C

− 20°C

75

°C 25°C

0

0.2

0.4

0.6

0.8

1.0

−40

0

40

80

120

160

200

Ambient temperature   T

a

   (

°C)

Forward voltage   V

F

   

(V

)

I

F

 

= 100 mA

10 mA

3 mA

10

−1

0

5

10

15

20

25

30

1

10

10

2

10

3

10

4

Reverse voltage   V

R

   (V)

Reverse current   I

R

   

A

)

T

a

 = 125°C

75

°C

25

°C

0

24

20

16

12

8

4

0

5

10

15

20

25

30

Reverse voltage   V

R

   (V)

Terminal capacitance   C

t

   

(pF

)

= 1 MHz

T

a

 

= 25°C

10

−1

−40

0

40

80

120

160

200

1

10

10

2

10

3

10

4

Ambient temperature   T

a

   (

°C)

Reverse current   I

R

   

A

)

V

R

 

= 30 V

3 V

1 V