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NZT651

NZT651

NPN Current Driver Transistor

NOTES:

1) These ratings are based on a maximum junction temperature of 150 degrees C.

2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Absolute Maximum Ratings*      

TA = 25°C unless otherwise noted

*

These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

Thermal Characteristics      

TA = 25°C unless otherwise noted

Symbol

Parameter

Value

Units

V

CEO

Collector-Emitter Voltage

60

V

V

CBO

Collector-Base Voltage

80

V

V

EBO

Emitter-Base Voltage

5.0

V

I

C

Collector Current - Continuous

4.0

A

T

J

, T

stg

Operating and Storage Junction Temperature Range

-55 to +150

°

C

Symbol

Characteristic

Max

Units

*NZT651

P

D

Total Device Dissipation

Derate above 25

°

C

1.2

9.7

W

mW/

°

C

R

θ

JA

Thermal Resistance, Junction to Ambient

103

°

C/W

B

C

C

SOT-223

E

*

Device mounted on FR-4 PCB 36 mm X 18 mm X 1.5 mm; mounting pad for the collector lead min. 6 cm

2

.

This device is designed for power amplifier, regulator and switching

circuits where speed is important. Sourced from Process 4P.

Discrete POWER & Signal

Technologies

© 

1997 Fairchild Semiconductor Corporation

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NZT651

Electrical Characteristics      

TA = 25°C unless otherwise noted

OFF CHARACTERISTICS

ON CHARACTERISTICS*

Symbol

Parameter

Test Conditions

Min

Max

Units

h

FE

DC Current Gain

I

C

 = 50 mA, V

CE

 = 2.0 V

I

C

 = 500 mA, V

CE

 = 2.0 V

I

C

 = 1.0 A, V

CE

 = 2.0 V

I

C

 = 2.0 A, V

CE

 = 2.0 V

75

75

75

40

V

CE(

sat

)

Collector-Emitter Saturation Voltage

I

C

 = 1.0 A, I

B

 = 100 mA

I

C

 = 2.0 A, I

B    

= 200 mA

0.3

0.5

V

V

V

BE(

sat

)

Base-Emitter Saturation Voltage

I

C

 = 1.0 A, I

B

 = 100 mA

1.2

V

V

BE(

on

)

Base-Emitter On Voltage

I

C

 = 1.0 A, V

CE

 = 2.0 V

1.0

V

SMALL SIGNAL CHARACTERISTICS

DC Typical Characteristics

V

(BR)CEO

Collector-Emitter Sustaining Voltage

I

C

 = 10 mA, I

B

 

=  0

60

V

V

(BR)CBO

Collector-Base Breakdown Voltage

I

C

 = 100 

µ

A, I

E

 = 0

80

V

V

(BR)EBO

Emitter-Base Breakdown Voltage

I

E

 = 100 

µ

A, I

 = 0

5.0

V

I

CBO

Collector-Cutoff Current

V

CB

 = 80 V, I

E  

= 0

100

nA

I

EBO

Emitter-Cutoff Current

V

EB

 = 4.0 V, I

C  

= 0

0.1

µ

A

f

T

Current Gain - Bandwidth Product

I

C

 = 50 mA, V

CE

 = 5.0 V,

f = 100 MHz

75

MHz

*

Pulse Test: Pulse Width 

≤ 

300 

µ

s, Duty Cycle 

≤ 

2.0%

Typical Pulsed Current Gain

vs Collector Current

0.01

0.1

1

10

0

50

100

150

200

I    - COLLECTOR CURRENT  (A)

h

  

  

  

- T

Y

P

ICAL

 P

U

L

S

E

D

 CU

RRE

NT

 G

A

IN

FE

- 40 ºC

25 °C

C

V    = 5V

CE 

125 °C

Collector-Emitter Saturation

Voltage vs Collector Current 

P 4P

0.01

0.1

1

10

0

0.5

1

1.5

2

2.5

3

I    - COLLECTOR CURRENT  (A)

V

   

   

 -

 C

O

LLE

C

T

O

R

-E

M

ITTE

R

 V

O

L

T

A

G

E

 (

V

)

CE

S

A

T

C

ββ

  = 10

- 40 ºC

25 °C

125 °C

NPN Current Driver Transistor

(continued)

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NZT651

DC Typical Characteristics  

(continued)

AC Typical Characteristics

Base-Emitter Saturation

Voltage vs Collector Current 

0.01

0.1

1

10

0.2

0.4

0.6

0.8

1

I    - COLLECTOR CURRENT  (A)

V   

   

 -

 B

A

S

E-

EM

IT

T

E

R

 VO

L

T

A

G

E

 (

V

)

BE

S

A

T

C

ββ

   = 10

- 40 ºC

25 °C

125 °C

Base-Emitter ON Voltage vs

Collector Current

P 4P

0.1

1

10

0.2

0.4

0.6

0.8

1

1.2

1.4

I    - COLLECTOR CURRENT  (A)

V

    

   

- B

A

SE-

EM

IT

T

E

R

 O

N

 VO

L

T

A

G

E

 (

V

)

B

E(O

N

)

C

V     = 5V

CE

 

- 40 ºC

25 °C

125 °C

Collector-Cutoff Current

vs Ambient Temperature

P 4P

25

50

75

100

125

150

0.01

0.1

1

10

100

T   - AMBIENT TEMPERATURE ( C)

I   

  - CO

L

L

E

CT

O

R

 CU

RR

E

N

T

 (

n

A)

A

V    = 50V

CB

º

CBO

NPN Current Driver Transistor

(continued)

Junction Capacitance vs.

Reverse Bias Voltage

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NZT651

AC Typical Characteristics  

(continued)

POWER DISSIPATION vs

AMBIENT TEMPERATURE

0

25

50

75

100

125

150

0

0.2

0.4

0.6

0.8

1

1.2

TEMPERATURE  (  C)

  -

 P

O

W

E

R

 D

ISSI

P

A

T

IO

N

 (

W

)

D

o

SOT-223

NPN Current Driver Transistor

(continued)