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Semiconductor Group

1

NPN Silicon AF Transistors

     BCX 58

BCX 59

        5.91

Maximum Ratings

Type

Ordering Code

Marking

Package

1)

Pin Configuration

BCX 58 VIII

BCX 58 IX

BCX 58 X

BCX 59 VIII

BCX 59 IX

BCX 59 X

Q62702-C619

Q62702-C620

Q62702-C621

Q62702-C623

Q62702-C624

Q62702-C625

TO-92

C

B

E

1

2

3

1)

For detailed information see chapter Package Outlines.

2)

Mounted on Al heat sink 15 mm

×

 25 mm

×

 0.5 mm.

Parameter

Symbol

Values

Unit

Collector-emitter voltage

V

CE0

V

Peak collector current

I

CM

Collector current

I

C

mA

Junction temperature

T

j

˚C

Total power dissipation,

T

C

 = 70 ˚C

P

tot

mW

Storage temperature range

T

stg

Collector-base voltage

V

CB0

Thermal Resistance

Junction - ambient

R

th JA

 250

K/W

100

200

500

150

– 65 … + 150

Emitter-base voltage

V

EB0

32

45

32

45

BCX 58

BCX 59

Peak base current

I

BM

200

7

Junction - case

2)

R

th JC

 160

q

High current gain

q

Low collector-emitter saturation voltage

q

Complementary types: BCX 78, BCX 79 (PNP)

1

2

3

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Semiconductor Group

2

       BCX 58

BCX 59

Electrical Characteristics

at

T

A

 = 25 ˚C, unless otherwise specified.

V

Collector-emitter breakdown voltage

I

C

 = 2 mA

BCX 58

BCX 59

V

(BR)CE0

32

45

nA

nA

µ

A

µ

A

Collector cutoff current

V

CB

 = 32 V

BCX 58

V

CB

 = 45 V

BCX 59

V

CB

 = 32 V,

T

A

 = 150 ˚C

BCX 58

V

CB

 = 45 V,

T

A

 = 150 ˚C

BCX 59

I

CB0

20

20

10

10

Unit

Values

Parameter

Symbol

min.

typ.

max.

DC characteristics

Collector-base breakdown voltage

I

C

 = 10

µ

A

BCX 58

BCX 59

V

(BR)CB0

32

45

Emitter-base breakdown voltage

I

E

 = 1

µ

A

V

(BR)EB0

7

DC current gain

I

C

 = 10

µ

A,

V

CE

 = 5 V

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

I

C

 = 2 mA,

V

CE

 = 5 V

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

I

C

 = 100 mA,

V

CE

 = 1 V

1)

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

h

FE

20

20

40

100

120

180

250

380

40

45

60

60

78

145

220

300

170

250

350

500

220

310

460

630

nA

Emitter cutoff current

V

EB

 = 4 V

I

EB0

20

µ

A

Collector cutoff current

V

CE

 = 32 V,

V

BE

 = 0.2 V,

T

A

 = 100 ˚C

V

CE

 = 45 V,

V

BE

 = 0.2 V,

T

A

 = 100 ˚C

I

CEX

20

20

1)

Pulse test:

t

300

µ

s,

D

  2 %.

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Semiconductor Group

3

       BCX 58

BCX 59

Electrical Characteristics

at

T

A

 = 25 ˚C, unless otherwise specified.

Base-emitter saturation voltage

1)

I

C

 = 100 mA,

I

B

 = 2.5 mA

V

BEsat

1.0

V

Collector-emitter saturation voltage

1)

I

C

 = 100 mA,

I

B

 = 2.5 mA

V

CEsat

0.5

DC characteristics

Unit

Values

Parameter

Symbol

min.

typ.

max.

Base-emitter voltage

I

C

 =  10

µ

A,

V

CE

 = 5 V

I

C

 =   2 mA,

V

CE

 = 5 V

I

C

 = 100 mA,

V

CE

 = 1 V

1)

V

BE(on)

0.55

0.52

0.65

0.83

0.75

1)

Pulse test:

t

300

µ

s,

D

  2 %.

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Semiconductor Group

4

       BCX 58

BCX 59

Electrical Characteristics

at

T

A

 = 25 ˚C, unless otherwise specified.

MHz

Transition frequency

I

C

 = 20 mA,

V

CE

 = 5 V,

f

 = 100 MHz

f

T

200

AC characteristics

pF

Output capacitance

V

CB

 = 10 V,

f

 = 1 MHz

C

obo

3

Input capacitance

V

CB

 = 0.5 V,

f

 = 1 MHz

C

ibo

8

k

Short-circuit input impedance

I

C

 = 2 mA,

V

CE

 = 5 V,

f

 = 1 kHz

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

h

11e

2.7

3.6

4.5

7.5

10

–4

Open-circuit reverse voltage transfer ratio

I

C

 = 2 mA,

V

CE

 = 5 V,

f

 = 1 kHz

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

h

12e

1.5

2.0

2.0

3.0

Unit

Values

Parameter

Symbol

min.

typ.

max.

dB

Noise figure

I

C

 = 0.2 mA,

V

CE

 = 5 V,

R

S

 = 2 k

f

 = 1 kHz,

f

 = 200 Hz

F

2

Short-circuit forward current transfer ratio

I

C

 = 2 mA,

V

CE

 = 5 V,

f

 = 1 kHz

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

h

21e

200

260

330

520

µ

S

Open-circuit output admittance

I

C

 = 2 mA,

V

CE

 = 5 V,

f

 = 1 kHz

BCX 58 VII, BCX 59 VII

BCX 58 VIII, BCX 59 VIII

BCX 58 IX, BCX 59 IX

BCX 58 X,

BCX 59 X

h

22e

18

24

30

50

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Semiconductor Group

5

       BCX 58

BCX 59

Total power dissipation

P

tot

=

f

(

T

A

;

T

C

)

Permissible pulse load

R

thJA

 =

f

 (

t

p

)

Collector current

I

C

 =

f

 (

V

BE

)

V

CE

 = 5 V (common emitter configuration)

DC current gain

h

FE

=

f

(

I

C

)

V

CE

 = 5 V (common emitter configuration)

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Semiconductor Group

6

       BCX 58

BCX 59

Collector cutoff current

I

CB0

=

f

(

T

A

)

V

CB

= 45 V

Base-emitter saturation voltage

I

C

=

f

 (

V

BEsat

)

h

FE

 = 20

Transition frequency

f

T

=

f

(

I

C

)

V

CE

 = 5 V,

f

 = 100 MHz

Collector-emitter saturation voltage

I

C

=

f

 (

V

CEsat

)

h

FE

 = 20