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Semiconductor Group

1

Nov-28-1996

BAS 16W

Silicon Switching Diode

• For high speed switching applications

Type

Marking Ordering Code

Pin Configuration

Package

BAS 16W

A6s

Q62702-A1050

1 = A

3 = C

SOT-323

Maximum Ratings

Parameter

Symbol

Values

Unit

Diode reverse voltage

V

R

 75

V

Peak reverse voltage

V

RM

 85

Forward current

I

F

 250

mA

Surge forward current, t = 1 

µ

s

I

FS

 4.5

Total Power dissipation

T

S

 

 119 °C

P

tot

 250

mW

Junction temperature

T

j

 150

°C

Storage temperature

T

stg

- 65 ... + 150

Thermal Resistance

Junction ambient     

1)

R

thJA

 260

K/W

Junction - soldering point     

R

thJS

 125

1) Package mounted on epoxy pcb 40mm x 40mmm x 1.5mm / 0.5cm

Cu

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Semiconductor Group

2

Nov-28-1996

BAS 16W

Electrical Characteristics at 

T

A

=25°C, unless otherwise specified

Parameter

Symbol

Values

Unit

min.

typ.

max.

DC characteristics

Breakdown voltage

I

(BR)

 = 100 µA

V

(BR)

 75

-

-

V

Forward voltage

I

F

 = 1 mA

I

F

 = 10 mA

I

F

 = 50 mA

I

F

 = 150 mA

V

F

-

-

-

-

-

-

-

-

 1250

 1000

 855

 715

mV

Reverse current

V

R

 = 70 V, 

T

A

 = 25 °C

V

R

 = 25 V, 

T

A

 = 150 °C

V

R

 = 75 V, 

T

A

 = 150 °C

I

R

-

-

-

-

-

-

 50

 30

 1

µA

AC characteristics

Diode capacitance

V

R

 = 0 V, 

f = 20 MHz

C

D

-

-

 2

pF

Reverse recovery time

I

F

 = 10 mA, 

I

R

 = 10 mA, 

R

L

 = 100 

t

rr

 measured at  1 mA

t

rr

-

-

 6

ns

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Semiconductor Group

3

Nov-28-1996

BAS 16W

Forward current 

I

F

 = 

f (T

A

*;

T

S

)

* Package mounted on epoxy

 

0

20

40

60

80

100

120 °C 150

 

T

A

,T

S

 

50 

100 

150 

200 

mA 

300 

 

I

F

 

 

T

S

 

T

A

Forward current 

I

F

 = 

f (V

F

)

T

A

 = 25°C

Permissible Pulse Load 

R

thJS

 = 

f(t

p

)

 

10 

-6 

10 

-5 

10 

-4 

10 

-3 

10 

-2 

10 

-1 

10 

 

t

p

 

10 

10 

10 

10 

K/W  

 

R

thJS

 

 D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

Permissible Pulse Load 

I

Fmax

/

I

FDC

 = 

f(t

p

)

 

10 

-6 

10 

-5 

10 

-4 

10 

-3 

10 

-2 

10 

-1 

10 

 

t

p

 

10 

10 

10 

-  

 

I

Fmax

/

I

FDC

 

 D = 0

0.005

0.01

0.02

0.05

0.1

0.2

0.5

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Semiconductor Group

4

Nov-28-1996

BAS 16W

Forward voltage 

V

F

 = 

f (T

A

)

Reverse current

 I

R

 = 

f (T

A

)