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5–1

 

FEATURES

•  Isolation Test Voltage: 2500 VAC

 

RMS

 

•  TTL  Compatible

•  High Bit Rates: 1 Mbit/s

•  High Common-Mode Interference Immunity

•  Bandwidth 2 MHz

•  Open-Collector Output

•  External Base Wiring Possible

•  Field-Effect Stable by TRIOS*

•  Underwriters Lab File #E52744

DESCRIPTION

 

The 6N135 and 6N136 are optocouplers with a 

GaAIAs infrared emitting diode, optically coupled 

with an integrated photodetector which consists of 

a photodiode and a high-speed transistor in

 

 

 

a

 

 

 

DIP-

8 plastic package. 

Signals can be transmitted between two electri-

cally separated circuits up to frequencies of 2 

MHz. The potential difference between the circuits 

to be coupled is not allowed to exceed the maxi-

mum permissible reference voltages.

 

Maximum Ratings

Emitter

 

Reverse Voltage .................................................5 V

Forward Current ............................................25 mA

Peak Forward Current

 (t =1 ms, duty cycle 50%) ............................50 mA

Maximum Surge Forward Current

 (t 

 

 

 

µ

 

s, 300 pulses/s).......................................1 A

Thermal Resistance................................... 700 K/W

Total Power Dissipation (T

 

A

 

 

70

 

°

 

C) ...............45 mW

 

Detector

 

Supply Voltage ..................................... –0.5 to 15 V

Output Voltage ....................................  –0.5 to 15 V

Emitter-Base Voltage ......................................... 5 V

Output Current.................................................8 mA

Maximum Output Current ..............................16 mA

Base Current .................................................. 5 mA

Thermal Resistance................................... 300 K/W

Total Power Dissipation (T

 

A

 

 

70

 

°

 

C) .............100 mW

 

Package

 

Isolation Test Voltage (between emitter and 

detector climate per DIN 40046, 

part 2, Nov. 74 (t=1min.) ............... 2500 VAC

 

RMS

 

Pollution Degree (DIN VDE 0109) ......................... 2

Creepage

 

...........................................................≥

 

7 mm

Clearance

 

...........................................................≥

 

7 mm

Comparative Tracking Index per 

DIN IEC112/VDE 0303 part 1, 

Group IIIa per DIN VDE 6110 ........................ 175 

Isolation Resistance

  V

 

IO

 

=500 V, T

 

A

 

 = 25

 

°

 

C ...............................

 

 

10

 

12

 

 

 

 

  V

 

IO

 

=500 V, T

 

A

 

 = 100

 

°

 

C .............................

 

 

10

 

11

 

 

 

 

Storage Temperature Range ....... –55

 

°

 

C to +125

 

°

 

C

Ambient Temperature Range ...... –55

 

°

 

C to +100

 

°

 

C

Soldering Temperature (max. 

 

 

10 sec., 

dip soldering 

 

 

0.5 mm from 

case bottom).............................................. 260

 

°

 

C

 

*TRIOS

 

 

TR

 

ansparent 

 

IO

 

 

S

 

hield

 

Characteristics

 

 (T

 

A

 

=0 to 70

 

°

 

C unless otherwise specified, T

 

A

 

=25

 

°

 

C typ.)

 

 

 

Emitter

Symbol

Unit

Condition

 

Forward Voltage

V

 

F

 

1.6 (

 

 

1.9)

V

I

 

F

 

=16 mA

Breakdown Voltage

V

 

BR

 

 

5

V

I

 

R

 

=10 

 

µ

 

A

Reverse Current

I

 

R

 

0.5 (

 

 

10)

 

µ

 

A

V

 

R

 

=5 V

Capacitance

C

 

O

 

125

pF

V

 

R

 

=0 V, f=1 MHz

Temperature Coeffi-

cient, Forward Voltage

 

 

V

 

F

 

 /

 

 

T

 

A

 

-1.7

mV/

 

°

 

C

I

 

F

 

=16 mA

 

Detector

 

Supply Current

Logic Low

I

 

CCL

 

150

 

µ

 

A

I

 

F

 

=16 mA, V

 

O

 

 open,

V

 

CC

 

=15 V

Supply Current

     Logic High

I

 

CCH

 

0.01 (

 

 

1)

 

µ

 

A

I

 

F

 

=0 mA, V

 

O

 

 open,

V

 

CC

 

=15 V

Output Voltage,

Output Low

6N135

6N136

V

 

OL

 

V

 

OL

 

0.1 (

 

 

0.4)

0.1 (

 

 

0.4)

V

V

I

 

F

 

=16 mA,

V

 

CC

 

=4.5 V

I

 

O

 

=1.1 mA

I

 

O

 

=2.4 mA

Output Current,

Output High

I

 

CH

 

3 (

 

 

500)

nA

I

 

F

 

=0 mA, 

V

 

O

 

=V

 

CC

 

=5.5 V

Output Current,

Output High

I

 

CH

 

0.01 (

 

 

1)

 

µ

 

A

I

 

F

 

=0 mA

V

 

O

 

=V

 

CC

 

=15 V

Current Gain

H

 

FE

 

150

V

 

O

 

=5 V, I

 

O

 

=3 mA

 

Package

 

Coupling Capacitance

Input-Output

C

 

IO

 

0.6

pF

f=1 MHz

Current Transfer Ratio

6N135

6N136

CTR

CTR

16 (

 

 

7)

35 (

 

 

19)

%

%

I

 

F

 

=16 mA, V

 

O

 

=0.4 V, 

V

 

CC

 

=4.5 V, T

 

A

 

=25

 

°

 

C

6N135

6N136

CTR

CTR

 

 

5

 

 

15

%

I

 

F

 

=16 mA, V

 

O

 

=0.5 V, 

V

 

CC

 

=4.5 V

Dimensions in inches (mm)

1

2

3

4

8

7

6

5

Cathode

(V

CC

)

NC

Anode

Cathode

NC

Base

(V

B

)

Collector

(V

O

)

Emitter

(GND)

.268 (6.81)

.255 (6.48)

3

4

6

5

.390 (9.91)

.379 (9.63)

.045 (1.14)

.030 (.76)

4

°

Typ.

.100 (2.54)

Typ.

10

°

Typ.

3

°

–9

°

.305 typ.

(7.75) typ.

.022 (.56)

.018 (.46)

.012 (.30)

.008 (.20)

.135 (3.43)

.115 (2.92)

1

2

8

7

Pin 

One 

I.D.

.150 (3.81)

.130 (3.30)

.040 (1.02)

.030 (.76 )

 

6N135

6N136

 

HIGH-SPEED 2.5 kV TRIOS

 

®

 

OPTOCOUPLER

 

This document was created with FrameMaker 4.0.4

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5–2

 

6N135/136

 

Figure 1. Switching times

Figure 2. Common-mode interference immunity

1

2

3

4

8

7

6

5

I

F

V

O

R

L

5 V

Pulse generator

Z

O

=50 

t

r,

t

f

=5 ns

duty cycle 10%

t

100 

µ

s

C

L

15 pF

I

Monitor

100 

V

OL

t

t

5 V

1.5 V

V

O

I

F

t

PLH

t

PHL

1

2

3

4

8

7

6

5

V

CM

V

O

V

O

10 V

5 V

0 V

V

OL

90%

10%

90%

10%

tr

tf

t

t

t

A: I

F

=0 mA

B: I

F

=16 mA

B

V

FF

I

F

+V

CM

V

O

R

L

5 V

A

Pulse generator

Z

O

=50 

t

r,

t

f

=8 ns

 

Delay Time 

 

(I

 

F

 

=16 mA, V

 

CC

 

=5 V, T

 

A

 

=25

 

°

 

C)

 

Common Mode Interference Immunity

 

(V

 

CM

 

=10 V

 

P-P

 

, V

 

CC

=5 V, T

A

=25

°

C)

Figure 3. Output characteristics-6N135

Output current versus output voltage

(T

A

=25

°

C, V

CC

=5 V)

Figure 4. Output characteristics-6N136

Output current versus output voltage

(T

A

=25

°

C, V

CC

=5 V)

High - Low

     6N135 (R

L

=4.1 k

)

     6N136 (R

L

=1.9 k

Ω)

t

PHL

t

PHL

0.3 (

1.5)

0.2 (

0.8)

µ

s

µ

s

Low - High

     6N135 (R

L

=4.1 k

)  

     6N136 (R

L

=1.9 k

)

t

PLH

t

PLH

0.3 (

1.5)

0.2 (

0.8)

µ

s

µ

s

High (I

F

=0 mA)

     6N135 (R

L

=4.1 k

)

     6N136 (R

L

=1.9 k

)

CM

H

CM

H

1000

1000

V/

µ

s

V/

µ

s

Low (I

F

=16 mA)

     6N135 (R

L

=4.1 k

)

     6N136 (R

L

=1.9 k

)

CM

L

CM

L

1000

1000

V/

µ

s

V/

µ

s

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5–3

6N135/136

Figure 11. Delay times versus ambi-

ent temperature (I

F

=16 mA, V

CC

=5 V,

 6N135: R

L

=4.1 k

, 6N136:  R

L

=1.9 k

)

Figure 12. Current transfer ratio (nor-

malized) versus forward current 

(I

F

=16 mA, V

O

=0.4 V, V

CC

=5 V, 

T

A

=25

°

C)

Figure 8. Small signal transfer ratio ver-

sus forward current (V

CC

=5 V, T

A

=25

°

C)

Figure 9. Current transfer ratio (normal-

ized) versus ambient temperature (nor-

malized to I

F

=16 mA, V

O

=0.4 V, V

CC

=5 V, 

T

A

=25

°

C)

Figure 10. Output current (high)versus 

ambient temperature

(V

O

=V

CC

=5 V, I

F

=0)

Figure 5. Permissible forward current 

of emitting diode versus ambient 

temperature

Figure 6. Permissible total power dissi-

pation versus ambient temperature

Figure 7. Forward current of emitting 

diodeversus forward voltage (T

A

=25

°

C)