2N2905A
2N2907A
GENERAL PURPOSE AMPLIFIERS AND SWITCHES
DESCRIPTION
The 2N2905A and 2N2907A are silicon planar
epitaxial PNP transistors in Jedec TO-39 (for
2N2905A) and in Jedec TO-18 (for 2N2907A)
metal case. They are designed for high speed
saturated
switching
and
general
purpose
applications.
INTERNAL SCHEMATIC DIAGRAM
November 1997
ABSOLUTE MAXIMUM RATINGS
Symbol
Parameter
Value
Unit
V
CBO
Collect or-Base Voltage (I
E
= 0)
-60
V
V
CEO
Collect or-Emitt er Voltage (I
B
= 0)
-60
V
V
EBO
Emitt er-Base Voltage (I
C
= 0)
-5
V
I
C
Collect or Current
-0. 6
A
P
t ot
Total Dissipation at T
amb
≤
25
o
C
for 2N2905A
for 2N2907A
at T
case
≤
25
o
C
for 2N2905A
for 2N2907A
0.6
0.4
3
1.8
W
W
W
W
T
stg
St orage Temperature
-65 t o 200
o
C
T
j
Max. Operating Junction Temperature
200
o
C
TO-18
TO-39
2N2905A approved to CECC 50002-100,
2N2906A approved to CECC 50002-103
available on request.
1/7
THERMAL DATA
T O-39
TO -18
R
t hj-ca se
R
t hj- amb
Thermal Resistance Junction-Case
Max
Thermal Resistance Junction-Ambient
Max
58. 3
292
97. 3
437.5
o
C/W
o
C/W
ELECTRICAL CHARACTERISTICS (T
case
= 25
o
C unless otherwise specified)
Symb ol
Parameter
Test Cond ition s
Mi n.
Typ .
Max.
Un it
I
CBO
Collect or Cut-off
Current (I
E
= 0)
V
CB
= -50 V
V
CB
= -50 V
T
c ase
= 150
o
C
-10
-10
nA
µ
A
I
CEX
Collect or Cut-off
Current (V
BE
= -0.5V)
V
CE
= -30 V
-50
nA
I
BEX
Base Cut-off Current
(V
BE
= -0. 5V)
V
CE
= -30 V
-50
nA
V
( BR)CBO
∗
Collect or-Base
Breakdown Volt age
(I
E
= 0)
I
C
= -10
µ
A
-60
V
V
( BR)CEO
∗
Collect or-Emitter
Breakdown Volt age
(I
B
= 0)
I
C
= -10 mA
-60
V
V
(BR)EBO
∗
Emitt er-Base
Breakdown Volt age
(I
C
= 0)
I
E
= -10
µ
A
-5
V
V
CE(sat )
∗
Collect or-Emitter
Saturat ion Voltage
I
C
= -150 mA
I
B
= -15 mA
I
C
= -500 mA
I
B
= -50 mA
-0.4
-1.6
V
V
V
BE(s at)
∗
Base-Emitt er
Saturat ion Voltage
I
C
= -150 mA
I
B
= -15 mA
I
C
= -500 mA
I
B
= -50 mA
-1.3
-2.6
V
V
h
FE
∗
DC Current G ain
I
C
= -0.1 mA
V
CE
= -10 V
I
C
= -1 mA
V
CE
= -10 V
I
C
= -10 mA
V
CE
= -10 V
I
C
= -150 mA
V
CE
= -10 V
I
C
= -500 mA
V
CE
= -10 V
75
100
100
100
50
300
f
T
Transit ion F requency
V
CE
= -50 V
f = 100 MHz
I
C
= -20 mA
200
MHz
C
EBO
Emitt er Base
Capacitance
I
C
= 0
V
EB
= -2 V
f = 1MHz
30
pF
C
CBO
Collect or Base
Capacitance
I
E
= 0
V
CB
= -10 V
f = 1MHz
8
pF
t
d
∗∗
Delay Time
V
CC
= -30 V
I
C
= -150 mA
I
B1
= -15 mA
10
ns
t
r
∗∗
Rise Time
V
CC
= -30 V
I
C
= -150 mA
I
B1
= -15 mA
40
ns
t
s
∗∗
St orage Time
V
CC
= -6 V
I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
80
ns
t
f
∗∗
Fall T ime
V
CC
= -6 V
I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
30
ns
t
on
∗∗
Turn-on T ime
V
CC
= -30 V
I
C
= -150 mA
I
B1
= -15 mA
45
ns
t
off
∗∗
Turn-off T ime
V
CC
= -6 V
I
C
= -150 mA
I
B1
= -I
B2
= -15 mA
100
ns
∗
Pulsed: Pulse duration = 300
µ
s, duty cycle
≤
1 %
∗∗
See test circuit
2N2905A/2N2907A
2/7
Normalized DC Current Gain.
Collector-emitter Saturation Voltage.
Collector-base and Emitter-base capacitances.
Switching Characteristics.
2N2905A/2N2907A
3/7
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the
consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No
license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned
in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied.
SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express
written approval of SGS-THOMSON Microelectonics.
©
1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved
SGS-THOMSON Microelectronics GROUP OF COMPANIES
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. . .
2N2905A/2N2907A
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