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On-State Current

10 Amp

FT10...H

HIGH COMMUTATION TRIAC

This series of TRIACs uses a high

performance PNPN technology.

These par ts are intended for general

purpose AC switching applications with

highly inductive loads.

Jun - 02

Absolute Maximum Ratings, according to IEC publication No. 134

TO220-AB

Gate Trigger Current

 25 mA to 

 50 mA

Off-State Voltage

200 V ÷ 600 V

MT1

MT2

G

MT2

RMS On-state Current

Non-repetitive On-State Current

Non-repetitive On-State Current

Fusing Current

Peak Gate Current

Average Gate Power Dissipation

Critical rate of rise of on-state current

Operating Temperature

Storage Temperature

I

T(RMS)

PARAMETER

CONDITIONS

Min.

Max.

Unit

SYMBOL

I

TSM

I

2

t

I

GM

P

G(AV)

T

j

T

stg

All Conduction Angle, T

C

 = 105 ºC

Full Cycle, 60 Hz

Full Cycle, 50 Hz

t

p

 = 10 ms, Half Cycle

20 µs max.        T

j

 =125ºC

T

=125ºC

I

G

 = 2x I

GT

,  t

r

 

100ns

f= 120 Hz, T

j

 =125ºC

10

105

100

55

50

-40

-40

A

A

A

A

2

s

A

W

A/µs

ºC

ºC

4

1

+125

+150

di/dt

I

TSM

Repetitive Peak Off State

Voltage

PARAMETER

VOLTAGE

Unit

SYMBOL

V

DRM

V

RRM

B

200

V

M

600

D

400

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FT10...H

HIGH COMMUTATION TRIAC

Jun - 02

Electrical Characteristics

Gate Trigger Current

Off-State Leakage Current

Threshold Voltage

Dynamic Resistance

On-state Voltage

Gate Trigger Voltage

Gate Non Trigger Current

Holding Current

Latching Current

Critical Rate of Voltage Rise

PARAMETER

CONDITIONS

SENSITIVITY

Unit

SYMBOL

I

GT 

(1)

I

DRM

V

D

 = 12 V

DC 

, R

L

 = 33

,    T

j

 = 25 ºC

mA

1

5

0.85

40

1.55

1.3

0.2

 

1.5

60

mA

µA

V

m

V

V

V

mA

mA

V/µs

A/ms

MAX

MAX

MAX

MAX

MAX

MAX

MAX

MIN

MAX

MAX

MAX

MIN

MIN

MIN

MIN

/I

RRM

V

TM

 

(2)

V

GT

V

GD

I

(2)

I

L

dv / dt 

(2)

R

th(j-a)

Thermal Resistance

Junction-Ambient

V

D

 = V

DRM 

,

T

j

 = 125 ºC

T

j

 = 25 ºC

V

R

 = V

RRM 

,

I

T

 = 14 Amp, tp = 380 µs, T

j

 = 25 ºC

V

D

 = 12 V

DC 

, R

L

 = 33

,     T

j

 = 25 ºC

I

T

 = 500 mA

 

, Gate open,    T

j

 = 25 ºC

I

G

 = 1.2 I

GT

,

   

T

j

 = 25 ºC

V

D

 = 0.67 x V

DRM

 , Gate open

T

j

 = 125 ºC

Quadrant

Q1÷Q3

Q1÷Q3

Q1÷Q3

Q1,Q3

Q2

V

D

 = V

DRM 

, R

L

 = 3.3K

,     T

j

 = 125 ºC

ºC/W

ºC/W

16

50

50

70

80

1000

-

-

9

14

35

35

50

60

500

-

-

5.5

(1) Minimum I

GT

 is guaranted at 5% of I

GT

 max.

(2) For either polarity of electrode MT2 voltage with reference to electrode MT1.

R

th(j-c)

Thermal Resistance

Junction-Case

for AC 360º conduction angle

(dI/dt)c 

(2)

Critical Rate of Current Rise (dv/dt)c= 0.1 V/µs                  T

= 125 ºC

(dv/dt)c= 10 V/µs                   T

j

 = 125 ºC

without snubber                     Tj = 125 ºC

V

to

 

(2)

R

d

(2)

T

j

 = 125 ºC

T

j

 = 125 ºC

PART NUMBER INFORMATION

FAGOR

TRIAC

CURRENT

CASE

VOLTAGE

SENSITIVITY

F

T

10

11

B

H

00

FORMING

TU

PACKAGING

11

25

25

40

50

200

-

-

5

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1

10

100

1000

130

120

110

100

  90

  80

  70

  60

  50

  40

  30

  20

  10

    0

I TSM (A)

Number of cycles

1E+0

1E-1

1E-2

K=[Zth / Rth]

1E-3

1E-2

1E-1

1E+0

1E+1

1E+2 5E+2

tp (s)

IT(RMS)(A)

Jun - 02

Fig. 1: Maximum power dissipation versus

RMS on-state curren (full cycle).

0

25

50

75

100

125

Fig. 2: RMS on-state current versus case

temperature (full cycle).

Fig. 3: : Relative variation of thermal

impedance versus pulse duration.

Fig. 5: Surge peak on-state current versus

number of cycles

Fig. 6: Non-repetitive surge peak on-state

current for a sinusoidal pulse with width

tp<10ms, and corresponding value of I

2

t.

Fig. 4: On-state characteristics (maximum

values)

FT10...H

HIGH COMMUTATION TRIAC

P (W)

Tc (ºC)

IT(RMS)(A)

0

2

4

6

12

8

10

0

2

4

6

8

10

12

14

16

0

2

4

6

8

10

12

14

100

  10

    1

ITM (A)

0.5 1.0 1.5 2.0 2.5 3.0

5.0

VTM (V)

Zth(j-c)

Zth(j-a)

3.5 4.0 4.5

Tj max

Vto = 0.85 V

Rt = 35m

0.01

0.10

1.00

10.00

1000

  100

    10

I TSM (A), I

t (A

2

s)

tp (ms)

Non repetitive

Tj initial = 25 ºC

Repetitive

Tc = 90 ºC

Tj initial = 25 ºC

dl/dt limitation

50A/µs

1

3

5

7

9

11

1

3

5

7

9

11

13

Tj max

Tj = 25 ºC

t=20ms

One cycle

I

2

t

ITSM

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FT10...H

HIGH COMMUTATION TRIAC

PACKAGE MECHANICAL DATA

TO-220AB (Plastic)

A

a1

a2

B

b1

b2

C

c1

c2

e

F

I

I4

L

I2

I3

M

REF.

DIMENSIONS

Milimeters

Min.

Nominal

Max.

15.20

13.00

10.00

0.61

1.23

4.40

0.49

2.40

2.40

6.20

3.75

15.80

2.65

1.14

1.14

3.75

16.40

2.60

15.90

14.00

10.40

0.88

1.32

4.60

0.70

2.72

2.70

6.60

3.85

16.80

2.95

1.70

1.70

14

a1

L

A

e

a2

b1

12

13

øI

B

c

F

b2

c2

c1

M

0

0.5

2.0

1.0

1.5

2.5

IGT,IH,IL[Tj]/IGT,IH,IL.[Tj=25ºC]

Fig. 7: Relative variation of gate trigger

current, holding current and latching versus

junction temperature (typical values)

Tj(ºC)

-40 -20 0 20 40 60 80 100120140

IGT

I

H

&I

L

Jun - 02

0

25

50

75

Fig. 8: Relative variation of critical rate of

decrease of main current versus junction

temperature

(dI/dt)c [Tj]/(dI/dc)c [Tj specified]

100

6

5

4

3

2

1

0

Tj(ºC)

125