background image

DATA  SHEET

Product specification

Supersedes data of 1996 Apr 26

1999 May 25

DISCRETE SEMICONDUCTORS

BZX79 series

Voltage regulator diodes

M3D176

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1999 May 25

2

Philips Semiconductors

Product specification

Voltage regulator diodes

BZX79 series

FEATURES

Total power dissipation:

max. 500 mW

Three tolerance series:

±

1%,

±

2%,

and approx.

±

5%

Working voltage range:

nom. 2.4 to 75 V (E24 range)

Non-repetitive peak reverse power

dissipation: max. 40 W.

APPLICATIONS

Low voltage stabilizers or voltage

references.

DESCRIPTION

Low-power voltage regulator diodes in hermetically sealed leaded glass

SOD27 (DO-35) packages. The diodes are available in the normalized E24

±

1% (BZX79-A),

±

2% (BZX79-B), and approx

. ±

5% (BZX79-C) tolerance

range. The series consists of 37 types with nominal working voltages from

2.4 to 75 V.

Fig.1  Simplified outline (SOD27; DO-35) and symbol.

The diodes are type branded.

handbook, halfpage

MAM239

k

a

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Notes

1. Device mounted on a printed circuit-board without metallization pad; lead length max.

2. Tie-point temperature

50

°

C; max. lead length 8 mm.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

I

F

continuous forward current

250

mA

I

ZSM

non-repetitive peak reverse current

t

p

= 100

µ

s; square wave;

T

j

= 25

°

C prior to surge

see Tables

1, 2, 3 and 4

P

tot

total power dissipation

T

amb

= 50

°

C; note 1

400

mW

T

amb

= 50

°

C; note 2

500

mW

P

ZSM

non-repetitive peak reverse power

dissipation

t

p

= 100

µ

s; square wave;

T

j

= 25

°

C prior to surge; see Fig.3

40

W

T

stg

storage temperature

65

+200

°

C

T

j

junction temperature

65

+200

°

C

background image

1999 May 25

3

Philips Semiconductors

Product specification

Voltage regulator diodes

BZX79 series

ELECTRICAL CHARACTERISTICS

Total BZX79-A, B and C series

T

j

= 25

°

C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

V

F

forward voltage

I

F

= 10 mA; see Fig.4

0.9

V

I

R

reverse current

BZX79-A/B/C2V4

V

R

= 1 V

50

µ

A

BZX79-A/B/C2V7

V

R

= 1 V

20

µ

A

BZX79-A/B/C3V0

V

R

= 1 V

10

µ

A

BZX79-A/B/C3V3

V

R

= 1 V

5

µ

A

BZX79-A/B/C3V6

V

R

= 1 V

5

µ

A

BZX79-A/B/C3V9

V

R

= 1 V

3

µ

A

BZX79-A/B/C4V3

V

R

= 1 V

3

µ

A

BZX79-A/B/C4V7

V

R

= 2 V

3

µ

A

BZX79-A/B/C5V1

V

R

= 2 V

2

µ

A

BZX79-A/B/C5V6

V

R

= 2 V

1

µ

A

BZX79-A/B/C6V2

V

R

= 4 V

3

µ

A

BZX79-A/B/C6V8

V

R

= 4 V

2

µ

A

BZX79-A/B/C7V5

V

R

= 5 V

1

µ

A

BZX79-A/B/C8V2

V

R

= 5 V

700

nA

BZX79-A/B/C9V1

V

R

= 6 V

500

nA

BZX79-A/B/C10

V

R

= 7 V

200

nA

BZX79-A/B/C11

V

R

= 8 V

100

nA

BZX79-A/B/C12

V

R

= 8 V

100

nA

BZX79-A/B/C13

V

R

= 8 V

100

nA

BZX79-A/B/C15 to 75

V

R

= 0.7V

Znom

50

nA

background image

1999

May

25

4

Philips Semiconductors

Product specification

V

oltage regulator diodes

BZX79 series

Table 1

Per type BZX79-A/B2V4 to A/B24

T

j

= 25

°

C unless otherwise specified.

BZX79-

A or B

XXX

WORKING VOLTAGE

V

Z

(V)

at I

Ztest

= 5 mA

DIFFERENTIAL RESISTANCE

r

dif

(

)

TEMP. COEFF.

S

Z

(mV/K)

at I

Ztest

= 5 mA

(see Figs 5 and 6)

DIODE CAP.

C

d

(pF)

at f = 1 MHz;

V

R

= 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

I

ZSM

 (A)

at t

p

= 100

µ

s; T

amb

= 25

°

C

Tol.

±

1% (A)

Tol.

±

2% (B)

at I

Ztest

= 1 mA

at I

Ztest

= 5 mA

MIN.

MAX.

MIN.

MAX.

TYP.

MAX.

TYP.

MAX.

MIN.

TYP.

MAX.

MAX.

MAX.

2V4

2.37

2.43

2.35

2.45

275

600

70

100

3.5

1.6

0

450

6.0

2V7

2.67

2.73

2.65

2.75

300

600

75

100

3.5

2.0

0

450

6.0

3V0

2.97

3.03

2.94

3.06

325

600

80

95

3.5

2.1

0

450

6.0

3V3

3.26

3.34

3.23

3.37

350

600

85

95

3.5

2.4

0

450

6.0

3V6

3.56

3.64

3.53

3.67

375

600

85

90

3.5

2.4

0

450

6.0

3V9

3.86

3.94

3.82

3.98

400

600

85

90

3.5

2.5

0

450

6.0

4V3

4.25

4.35

4.21

4.39

410

600

80

90

3.5

2.5

0

450

6.0

4V7

4.65

4.75

4.61

4.79

425

500

50

80

3.5

1.4

0.2

300

6.0

5V1

5.04

5.16

5.00

5.20

400

480

40

60

2.7

0.8

1.2

300

6.0

5V6

5.54

5.66

5.49

5.71

80

400

15

40

2.0

1.2

2.5

300

6.0

6V2

6.13

6.27

6.08

6.32

40

150

6

10

0.4

2.3

3.7

200

6.0

6V8

6.73

6.87

6.66

6.94

30

80

6

15

1.2

3.0

4.5

200

6.0

7V5

7.42

7.58

7.35

7.65

30

80

6

15

2.5

4.0

5.3

150

4.0

8V2

8.11

8.29

8.04

8.36

40

80

6

15

3.2

4.6

6.2

150

4.0

9V1

9.00

9.20

8.92

9.28

40

100

6

15

3.8

5.5

7.0

150

3.0

10

9.90

10.10

9.80

10.20

50

150

8

20

4.5

6.4

8.0

90

3.0

11

10.89

11.11

10.80

11.20

50

150

10

20

5.4

7.4

9.0

85

2.5

12

11.88

12.12

11.80

12.20

50

150

10

25

6.0

8.4

10.0

85

2.5

13

12.87

13.13

12.70

13.30

50

170

10

30

7.0

9.4

11.0

80

2.5

15

14.85

15.15

14.70

15.30

50

200

10

30

9.2

11.4

13.0

75

2.0

16

15.84

16.16

15.70

16.30

50

200

10

40

10.4

12.4

14.0

75

1.5

18

17.82

18.18

17.60

18.40

50

225

10

45

12.4

14.4

16.0

70

1.5

20

19.80

20.20

19.60

20.40

60

225

15

55

14.4

16.4

18.0

60

1.5

22

21.78

22.22

21.60

22.40

60

250

20

55

16.4

18.4

20.0

60

1.25

24

23.76

24.24

23.50

24.50

60

250

25

70

18.4

20.4

22.0

55

1.25

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1999

May

25

5

Philips Semiconductors

Product specification

V

oltage regulator diodes

BZX79 series

Table 2

Per type BZX79-A/B27 to A/B75

T

j

= 25

°

C unless otherwise specified.

BZX79-

A or B

XXX

WORKING VOLTAGE

V

Z

(V)

at I

Ztest

= 2 mA

DIFFERENTIAL RESISTANCE

r

dif

(

)

TEMP. COEFF.

S

Z

(mV/K)

at I

Ztest

= 2 mA

(see Figs 5 and 6)

DIODE CAP.

C

d

(pF)

at f = 1 MHz;

V

R

= 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

I

ZSM

 (A)

at t

p

= 100

µ

s; T

amb

= 25

°

C

Tol.

±

1% (A)

Tol.

±

2% (B)

at I

Ztest

= 0.5 mA

at I

Ztest

= 2 mA

MIN.

MAX.

MIN.

MAX.

TYP.

MAX.

TYP.

MAX.

MIN.

TYP.

MAX.

MAX.

MAX.

27

26.73

27.27

26.50

27.50

65

300

25

80

21.4

23.4

25.3

50

1.0

30

29.70

30.30

29.40

30.60

70

300

30

80

24.4

26.6

29.4

50

1.0

33

32.67

33.33

32.30

33.70

75

325

35

80

27.4

29.7

33.4

45

0.9

36

35.64

36.36

35.30

36.70

80

350

35

90

30.4

33.0

37.4

45

0.8

39

38.61

39.39

38.20

39.80

80

350

40

130

33.4

36.4

41.2

45

0.7

43

42.57

43.43

42.10

43.90

85

375

45

150

37.6

41.2

46.6

40

0.6

47

46.53

47.47

46.10

47.90

85

375

50

170

42.0

46.1

51.8

40

0.5

51

50.49

51.51

50.00

52.00

90

400

60

180

46.6

51.0

57.2

40

0.4

56

55.44

56.56

54.90

57.10

100

425

70

200

52.2

57.0

63.8

40

0.3

62

61.38

62.62

60.80

63.20

120

450

80

215

58.8

64.4

71.6

35

0.3

68

67.32

68.68

66.60

69.40

150

475

90

240

65.6

71.7

79.8

35

0.25

75

74.25

75.75

73.50

76.50

170

500

95

255

73.4

80.2

88.6

35

0.2

background image

1999

May

25

6

Philips Semiconductors

Product specification

V

oltage regulator diodes

BZX79 series

Table 3

Per type BZX79-C2V4 to C24

T

j

= 25

°

C unless otherwise specified.

BZX79

- C

XXX

WORKING VOLTAGE

V

Z

(V)

at I

Ztest

= 5 mA

DIFFERENTIAL RESISTANCE

r

dif

(

)

TEMP. COEFF.

S

Z

(mV/K)

at I

Ztest

= 5 mA

(see Figs 5 and 6)

DIODE CAP.

C

d

(pF)

at f = 1 MHz;

V

R

= 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

I

ZSM

 (A)

at t

p

= 100

µ

s; T

amb

= 25

°

C

Tol. approx.

±

5% (C)

at I

Ztest

= 1 mA

at I

Ztest

= 5 mA

MIN.

MAX.

TYP.

MAX.

TYP.

MAX.

MIN.

TYP.

MAX.

MAX.

MAX.

2V4

2.2

2.6

275

600

70

100

3.5

1.6

0

450

6.0

2V7

2.5

2.9

300

600

75

100

3.5

2.0

0

450

6.0

3V0

2.8

3.2

325

600

80

95

3.5

2.1

0

450

6.0

3V3

3.1

3.5

350

600

85

95

3.5

2.4

0

450

6.0

3V6

3.4

3.8

375

600

85

90

3.5

2.4

0

450

6.0

3V9

3.7

4.1

400

600

85

90

3.5

2.5

0

450

6.0

4V3

4.0

4.6

410

600

80

90

3.5

2.5

0

450

6.0

4V7

4.4

5.0

425

500

50

80

3.5

1.4

0.2

300

6.0

5V1

4.8

5.4

400

480

40

60

2.7

0.8

1.2

300

6.0

5V6

5.2

6.0

80

400

15

40

2.0

1.2

2.5

300

6.0

6V2

5.8

6.6

40

150

6

10

0.4

2.3

3.7

200

6.0

6V8

6.4

7.2

30

80

6

15

1.2

3.0

4.5

200

6.0

7V5

7.0

7.9

30

80

6

15

2.5

4.0

5.3

150

4.0

8V2

7.7

8.7

40

80

6

15

3.2

4.6

6.2

150

4.0

9V1

8.5

9.6

40

100

6

15

3.8

5.5

7.0

150

3.0

10

9.4

10.6

50

150

8

20

4.5

6.4

8.0

90

3.0

11

10.4

11.6

50

150

10

20

5.4

7.4

9.0

85

2.5

12

11.4

12.7

50

150

10

25

6.0

8.4

10.0

85

2.5

13

12.4

14.1

50

170

10

30

7.0

9.4

11.0

80

2.5

15

13.8

15.6

50

200

10

30

9.2

11.4

13.0

75

2.0

16

15.3

17.1

50

200

10

40

10.4

12.4

14.0

75

1.5

18

16.8

19.1

50

225

10

45

12.4

14.4

16.0

70

1.5

20

18.8

21.2

60

225

15

55

14.4

16.4

18.0

60

1.5

22

20.8

23.3

60

250

20

55

16.4

18.4

20.0

60

1.25

24

22.8

25.6

60

250

25

70

18.4

20.4

22.0

55

1.25

background image

1999

May

25

7

Philips Semiconductors

Product specification

V

oltage regulator diodes

BZX79 series

Table 4

Per type BZX79-C27 to C75

T

j

= 25

°

C unless otherwise specified.

BZX79

- C

XXX

WORKING

VOLTAGE

V

Z

(V)

at I

Ztest

= 2 mA

DIFFERENTIAL RESISTANCE

r

dif

(

)

TEMP. COEFF.

S

Z

(mV/K)

at I

Ztest

= 2 mA

(see Figs 5 and 6)

DIODE CAP.

C

d

(pF)

at f = 1 MHz;

V

R

= 0 V

NON-REPETITIVE PEAK

REVERSE CURRENT

I

ZSM

 (A)

at t

p

= 100

µ

s; T

amb

= 25

°

C

Tol.approx.

±

5% (C)

at I

Ztest

= 0.5 mA

at I

Ztest

= 2 mA

MIN.

MAX.

TYP.

MAX.

TYP.

MAX.

MIN.

TYP.

MAX.

MAX.

MAX.

27

25.1

28.9

65

300

25

80

21.4

23.4

25.3

50

1.0

30

28.0

32.0

70

300

30

80

24.4

26.6

29.4

50

1.0

33

31.0

35.0

75

325

35

80

27.4

29.7

33.4

45

0.9

36

34.0

38.0

80

350

35

90

30.4

33.0

37.4

45

0.8

39

37.0

41.0

80

350

40

130

33.4

36.4

41.2

45

0.7

43

40.0

46.0

85

375

45

150

37.6

41.2

46.6

40

0.6

47

44.0

50.0

85

375

50

170

42.0

46.1

51.8

40

0.5

51

48.0

54.0

90

400

60

180

46.6

51.0

57.2

40

0.4

56

52.0

60.0

100

425

70

200

52.2

57.0

63.8

40

0.3

62

58.0

66.0

120

450

80

215

58.8

64.4

71.6

35

0.3

68

64.0

72.0

150

475

90

240

65.6

71.7

79.8

35

0.25

75

70.0

79.0

170

500

95

255

73.4

80.2

88.6

35

0.2

background image

1999 May 25

8

Philips Semiconductors

Product specification

Voltage regulator diodes

BZX79 series

THERMAL CHARACTERISTICS

Note

1. Device mounted on a printed circuit-board without metallization pad.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R

th j-tp

thermal resistance from junction to tie-point lead length 8 mm.

300

K/W

R

th j-a

thermal resistance from junction to ambient lead length max.; see Fig.2 and note 1

380

K/W

GRAPHICAL DATA

handbook, full pagewidth

10

1

1

10

10

2

10

3

10

4

10

5

MBG930

10

2

10

1

10

3

tp (ms)

tp

tp

T

T

δ 

=

0.02

0.01

0.001

0.75

0.50

0.33

0.20

0.10

0.05

δ

 = 1

Rth j-a

(K/W)

Fig.2  Thermal resistance from junction to ambient as a function of pulse duration.

background image

1999 May 25

9

Philips Semiconductors

Product specification

Voltage regulator diodes

BZX79 series

Fig.3

Maximum permissible non-repetitive

peak reverse power dissipation

versus duration.

handbook, halfpage

MBG801

10

3

1

duration (ms)

PZSM

(W)

10

10

2

10

1

10

1

(1)

(2)

(1) T

j

= 25

°

C (prior to surge).

(2) T

j

= 150

°

C (prior to surge).

Fig.4

Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0.6

1.0

300

100

0

200

MBG781

0.8

VF (V)

IF

(mA)

T

j

= 25

°

C.

Fig.5

Temperature coefficient as a function of

working current; typical values.

handbook, halfpage

0

60

0

2

3

1

MBG783

20

40

IZ (mA)

SZ

(mV/K)

4V3

3V9

3V6

3V0

2V4

2V7

3V3

BZX79-A/B/C2V4 to A/B/C4V3.

T

j

= 25 to 150

°

C.

Fig.6

Temperature coefficient as a function of

working current; typical values.

handbook, halfpage

0

20

16

10

0

5

5

MBG782

4

8

12

IZ (mA)

SZ

(mV/K)

4V7

12

11

10

9V1

8V2

7V5

6V8

6V2

5V6

5V1

BZX79-A/B/C4V7 to A/B/C12.

T

j

= 25 to 150

°

C.

background image

1999 May 25

10

Philips Semiconductors

Product specification

Voltage regulator diodes

BZX79 series

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

 REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

 IEC

 JEDEC

 EIAJ

Note

1. The marking band indicates the cathode.

 SOD27

DO-35

A24

SC-40

97-06-09

Hermetically sealed glass package; axial leaded; 2 leads

SOD27

UNIT

b

max.

mm

0.56

D

max.

G1

max.

25.4

4.25

1.85

L

min.

DIMENSIONS (mm are the original dimensions)

G1

L

D

L

b

(1)

0

1

2 mm

scale

background image

1999 May 25

11

Philips Semiconductors

Product specification

Voltage regulator diodes

BZX79 series

NOTES

background image

© Philips Electronics N.V.

 SCA

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

Internet: http://www.semiconductors.philips.com

1999

65

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Printed in The Netherlands

115002/02/pp12

 Date of release: 1999 May 25

Document order number:

 9397 750 05894