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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

HI-RELIABILITY PRODUCT

WS1M8-XXX

2x512Kx8 DUALITHIC™ SRAM

FEATURES

s Access Times 17, 20, 25, 35, 45, 55ns

s Revolutionary, Center Power/Ground Pinout

s Packaging:

• 32 pin, Hermetic Ceramic DIP (Package 300)

• 36 lead Ceramic SOJ (Package 100)

• 36 lead Ceramic Flatpack (Package 226)

October 2000  Rev. 4

36 CSOJ

36 FLATPACK

TOP VIEW

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

17

18

36

35

34

33

32

31

30

29

28

27

26

25

24

23

22

21

20

19

A0

A1

A2

A3

A4

CS1

I/O0

I/O1

V

CC

GND

I/O2

I/O3

WE

A5

A6

A7

A8

A9

NC

A18

A17

A16

A15

OE

I/O7

I/O6

GND

V

CC

I/O5

I/O4

A14

A13

A12

A11

A10

CS2

BLOCK DIAGRAM

512K x 8

512K x 8

A

0 - 1 8

O E

W E

C S

1

C S

2

I / O

0 - 7

(1)

(1)

PIN CONFIGURATION FOR WS1M8-XDJX

AND WS1M8-XFX

A

0-18

Address Inputs

I/O

0-7

Data Input/Output

CS

1-2

Chip Selects

OE

Output Enable

WE

Write Enable

V

CC

+5.0V Power

GND

Ground

PIN DESCRIPTION

NOTE:

1. CS

1

 and CS

are used to select the lower and upper 512Kx8 of the device. CS

1

 and CS

2

 must not be enabled at the same time.

s Organized as two banks of 512Kx8

s Commercial, Industrial and Military Temperature Ranges

s 5 Volt Power Supply

s Low Power CMOS

s TTL Compatible Inputs and Outputs

PIN CONFIGURATION FOR WS1M8-XCX

1

2

3

4

5

6

7

8

9

10

11

12

13

14

15

16

32

31

30

29

28

27

26

25

24

23

22

21

20

19

18

17

A18

A16

A14

A12

A7

A6

A5

A4

A3

A2

A1

A0

I/O0

I/O1

I/O2

GND

V

CC

A15

A17

WE

A13

A8

A9

A11

CS2

A10

CS1

I/O7

I/O6

I/O5

I/O4

I/O3

32 DIP

TOP VIEW

BLOCK DIAGRAM

512K x 8

512K x 8

A

0 - 1 8

W E

C S

1

C S

2

I / O

0 - 7

(1)

(1)

A

0-18

Address Inputs

I/O

0-7

Data Input/Output

CS

1-2

Chip Selects

WE

Write Enable

V

CC

+5.0V Power

GND

Ground

PIN DESCRIPTION

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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

WS1M8-XXX

TRUTH TABLE

ABSOLUTE MAXIMUM RATINGS

Parameter

 Symbol

Min

Max

Unit

Operating Temperature

 T

A

-55

+125

°

C

Storage Temperature

 T

STG

-65

+150

°

C

Signal Voltage Relative to GND

 V

G

-0.5

Vcc+0.5

  V

Junction Temperature

 T

J

150

°

C

Supply Voltage

V

CC

-0.5

7.0

V

CS

OE

WE

Mode

Data I/O

 Power

H

X

X

Standby

High Z

Standby

L

L

H

Read

Data Out

Active

L

X

L

Write

Data In

Active

L

H

H

Out Disable

High Z

Active

NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.

RECOMMENDED OPERATING CONDITIONS

Parameter

Symbol

Condition

Max Unit

Input capacitance

C

IN

V

IN

 = 0V, f = 1.0MHz

20

pF

Output capicitance

C

OUT

V

OUT

 = 0V, f = 1.0MHz

20

pF

This parameter is guaranteed by design but not tested.

Parameter

Symbol

Min

Max

Unit

Supply Voltage

V

CC

4.5

5.5

V

Input High Voltage

V

IH

2.2

V

CC

 + 0.3

V

Input Low Voltage

V

IL

-0.3

+0.8

V

Operating Temp. (Mil.)

T

A

-55

+125

°

C

CAPACITANCE

(T

A

 = +25

°

C)

DC CHARACTERISTICS

(V

CC

 

= 5.0V, V

SS

 = 0V, T

A

 = -55

°

C to +125

°

C)

Parameter

Sym

Conditions

Units

Min

Max

Input Leakage Current

I

LI

V

CC

 = 5.5, V

IN

 = GND to V

CC

10

µ

A

Output Leakage Current

I

LO

1

CS = V

IH

, OE = V

IH

, V

OUT

 = GND to V

CC

10

µ

A

Operating Supply Current

I

CC

1

CS = V

IL

, OE = V

IH

, f = 5MHz, Vcc = 5.5

180

mA

Standby Current

I

SB

1

CS = V

IH

, OE = V

IH

, f = 5MHz, Vcc = 5.5

40

mA

Output Low Voltage

V

OL

I

OL

 = 8mA

0.4

V

Output High Voltage

V

OH

I

OH

 = -4.0mA

2.4

V

Parameter

Symbol

Conditions

Units

Min

Typ

Max

Data Retention Supply Voltage

V

DR

CS 

 V

CC

 -0.2V

2.0

5.5

V

Data Retention Current

I

CCDR1

V

CC

 = 3V

3.0

18.0*

mA

LOW POWER DATA RETENTION CHARACTERISTICS (WS1M8L-XXX ONLY)

(T

A

 

= -55

°

C to +125

°

C)

NOTE: DC test conditions: V

IH

 = V

CC

 -0.3V , V

IL

 = 0.3V

1.  OE is internally tied to the GND and not accessible on the WS1M8-XCX.

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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

WS1M8-XXX

AC CHARACTERISTICS

(V

CC

 

= 5.0V, V

SS

 = 0V, T

A

 

= -55

°

C to +125

°

C)

Parameter

Symbol

-17

-20

-25

-35

-45

-55

Units

Read Cycle

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Read Cycle Time

t

RC

17

20

25

35

45

55

ns

Address Access Time

t

AA

17

20

25

35

45

55

ns

Output Hold from Address Change

t

OH

0

0

0

0

0

0

ns

Chip Select Access Time

t

ACS

17

20

25

35

45

55

ns

Output Enable to Output Valid

t

OE

2

9

10

12

25

25

25

ns

Chip Select to Output in Low Z

t

CLZ

1

2

2

2

4

4

4

ns

Output Enable to Output in Low Z

t

OLZ

2

0

0

0

0

0

0

ns

Chip Disable to Output in High Z

t

CHZ

1

9

10

12

15

20

20

ns

Output Disable to Output in High Z

t

OHZ

2

9

10

12

15

20

20

ns

1.  This parameter is guaranteed by design but not tested.

2.  OE is internally tied to the GND and not accessible on the WS1M8-XCX.

AC CHARACTERISTICS

(V

CC

 

= 5.0V, V

SS

 = 0V, T

A

 

= -55

°

C to +125

°

C)

Parameter

Symbol

-17

-20

-25

-35

-45

-55

Units

Write Cycle

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Min

Max

Write Cycle Time

t

WC

 17

20

25

35

45

55

ns

Chip Select to End of Write

t

CW

14

14

15

25

35

50

ns

Address Valid to End of Write

t

AW

14

14

15

25

35

50

ns

Data Valid to End of Write

t

DW

9

10

10

20

25

25

ns

Write Pulse Width

t

WP

 14

14

15

25

35

40

ns

Address Setup Time

t

AS

0

0

0

0

0

0

ns

Address Hold Time

t

AH

0

0

0

0

5

5

ns

Output Active from End of Write

t

OW

1

2

3

4

4

5

5

ns

Write Enable to Output in High Z

t

WHZ

1

9

9

10

15

15

25

ns

Data Hold Time

t

DH

0

0

0

0

0

0

ns

1.  This parameter is guaranteed by design but not tested.

I

Current Source

D.U.T.

C     = 50 pf

eff

I

OL

V   

 1.5V

(Bipolar Supply)

Z

Current Source

OH

NOTES:

V

Z

 is programmable from -2V to +7V.

I

OL

 & I

OH

 programmable from 0 to 16mA.

Tester Impedance  Z

0

 = 75 

.

V

Z

 is typically the midpoint of V

OH

 and V

OL

.

I

OL

 & I

OH

 

are adjusted to simulate a typical resistive load circuit.

ATE tester includes jig capacitance.

AC TEST CIRCUIT

AC TEST CONDITIONS

Parameter

Typ

Unit

Input Pulse Levels

V

IL

 = 0, V

IH

 = 3.0

V

Input Rise and Fall

5

ns

Input and Output Reference Level

1.5

V

Output Timing Reference Level

1.5

V

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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

WS1M8-XXX

WS32K32-XHX

TIMING WAVEFORM - READ CYCLE

 

WRITE CYCLE - CS CONTROLLED

WRITE CYCLE - WE CONTROLLED

ADDRESS

DATA I/O

WRITE CYCLE 1,  WE CONTROLLED

t

AW

t

CW

t

AH

t

WP

t

DW

t

WHZ

t

AS

t

OW

t

DH

t

WC

DATA VALID

CS

WE

ADDRESS

DATA I/O

WRITE CYCLE 2,  CS CONTROLLED

t

AW

t

AS

t

CW

t

AH

t

WP

t

DH

t

DW

t

WC

CS

WE

DATA VALID

ADDRESS

DATA I/O

READ CYCLE 2  (WE = V

IH

)

t

AA

t

ACS

t

OE

t

CLZ

t

OLZ

t

OHZ

t

RC

DATA VALID

HIGH IMPEDANCE

CS

OE 

t

CHZ

ADDRESS

DATA I/O

READ CYCLE 1  (CS = OE = V

IL

, WE = V

IH

)

t

AA

t

OH

t

RC

DATA VALID

PREVIOUS DATA VALID

NOTE: OE is internally tied to the GND and not accessible on the WS1M8-XCX.

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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

WS1M8-XXX

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

PACKAGE 100:   

36 LEAD, CERAMIC SOJ

1.27 (0.050) TYP

23.37 (0.920) 

±

 0.25 (0.010)

PIN 1 IDENTIFIER

21.59 (0.850) TYP

11.3 (0.446)

±

 0.2 (0.009)

0.43 (0.017) 

±

 0.05 (0.002)

4.76 (0.184) MAX

0.89 (0.035)

Radius TYP

0.20 (0.008)

±

 0.05 (0.002)

9.55 (0.376) 

±

 0.25 (0.010)

1.27 (0.050) 

±

 0.25 (0.010)

PACKAGE 226:   

36  LEAD, CERAMIC FLAT PACK

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES

23.37 (0.920) 

±

 0.25 (0.010)

32.64 (1.285) TYP

12.95 (0.510)

±

 0.13 (0.005)

3.8 (0.150)

 TYP

3.18 (0.125)

MAX

0.127 (0.005)

±

 0.05 (0.002)

PIN 1

IDENTIFIER

1.27 (0.050) TYP

21.59 (0.850) TYP

38.1 (1.50) 

±

 0.4 (0.015)

12.7 (0.500) 

±

 0.5 (0.020)

5.1 (0.200) 

±

 0.25 (0.010)

0.43 (0.017) 

±

 0.05 (0.002)

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White Electronic Designs Corporation • (602) 437-1520 • www.whiteedc.com

WS1M8-XXX

ORDERING INFORMATION

LEAD FINISH:

Blank = Gold plated leads

A = Solder dip leads

DEVICE GRADE:

M = Military Screened

-55

°

C to +125

°

C

 I = Industrial

-40

°

C to +85

°

C

C = Commercial

0

°

C to +70

°

C

PACKAGE:

C = 32 pin Ceramic 0.600" DIP (Package 300)

DJ = 36 Lead Ceramic SOJ (Package 100)

F = 36 Lead Ceramic Flatpack (Package 226)

ACCESS TIME (ns)

IMPROVEMENT MARK:

Blank = Standard Power

L = Low Power Data Retention

ORGANIZATION, two banks of 512K x 8

SRAM

WHITE ELECTRONIC DESIGNS CORP.

W S  1M8 X  - XXX  X  X  X

PACKAGE 300:   

32 PIN, CERAMIC DIP, SINGLE CAVITY SIDE BRAZED

2.5 (0.100)

TYP

1.27 (0.050)

±

 0.1 (0.005)

0.46 (0.018)

±

 0.05 (0.002)

0.99 (0.039)

±

 0.51 (0.020)

3.2 (0.125) MIN

0.25 (0.010)

±

 0.05 (0.002)

15.25 (0.600)

±

 0.25 (0.010)

42.8 (1.686) MAX

5.13 (0.202) MAX

PIN 1 IDENTIFIER

ALL LINEAR DIMENSIONS ARE MILLIMETERS AND PARENTHETICALLY IN INCHES