background image

©2000 Fairchild Semiconductor International

Rev. A, February 2000

BD534/

536/

538

PNP Epitaxial Silicon Transistor

Absolute Maximum Ratings 

T

C

=25

°

C unless otherwise noted

Electrical Characteristics 

T

C

=25

°

C unless otherwise noted

* Pulse Test: PW =300

µ

s, duty Cycle =1.5% Pulsed

Symbol

Parameter

Value

Units

 V

CBO

 Collector-Base Voltage                          : BD534

                     : BD536

                     : BD538

- 45

- 60

- 80

V

V

V

 

V

CEO

 Collector-Emitter Voltage                       : BD534

                     : BD536

                     : BD538

- 45

- 60

- 80

V

V

V

 

V

EBO

 Emitter-Base Voltage

 - 5

V

 I

C

 Collector Current (DC)

 - 8

A

 I

B

 Base Current

 - 1

A

 P

C

 Collector Dissipation (T

C

=25

°

C)

 50

W

 T

J

 Junction Temperature

    150

°

C

 T

STG

 Storage Temperature

- 65 ~ 150

°

C

Symbol

Parameter

Test Condition

Min.

Typ.

Max.

Units

 I

CBO

 Collector Cut-off Current        : BD534

     : BD536

     : BD538

 V

CB 

= - 45V, I

= 0

 V

CB 

= - 60V, I

= 0

 V

CB 

= - 80V, I

= 0

- 100

- 100

- 100

µ

A

µ

A

µ

A

 

I

CES

 Collector Cut-off Current        : BD534

     : BD536

     : BD538

 V

CE 

= - 45V, V

BE 

= 0

 V

CE 

= - 60V, V

BE 

= 0

 V

CE 

= - 80V, V

BE 

= 0

- 100

- 100

- 100

µ

A

µ

A

µ

A

 

I

EBO  

  Emitter Cut-off Current

 V

EB 

= - 5V, I

= 0

  - 1

mA

 

h

FE

* DC Current Gain      : ALL DEVICE

: BD534/536

: BD538

: BD534/536

: BD538

 V

CE 

= -2 V, I

= - 500mA

 V

CE 

= - 5V, I

= - 10mA

 V

CE 

= - 2V, I

= - 2A

40

20

15

25

15

 

h

FE

  

 h

FE

 Groups

          J

: ALL DEVICE       

         

          K

: ALL DEVICE

 V

CE 

= - 2V, I

= - 2A

 V

CE 

= - 2V, I

= - 3A

 V

CE 

= -2V, I

= - 2A

 V

CE 

= - 2V, I

= - 3A

30

15

40

20

 

75

100

 V

CE

(sat)

* Collector-Emitter Saturation Voltage

 I

= - 2A, I

= - 0.2A

 I

= - 6A, I

= - 0.6A

 - 0.8

-  0.8

V

V

 V

BE

(on)

* Base-Emitter ON Voltage

 V

CE 

= - 2V, I

= - 2A

- 1.5

V

 f

T

 Current Gain Bandwidth Product

 V

CE 

= - 1V, I

= - 500mA

3

  12

MHz

BD534/536/538

Medium Power Linear and Switching 

Applications 

• Low Saturation Voltage

• Complement to BD533, BD535 and BD537 respectively

1.Base    2.Collector    3.Emitter

1

TO-220

background image

©2000 Fairchild Semiconductor International

BD534/

536/

538

Rev. A, February 2000

Typical Characteristics

Figure 1. DC current Gain

Figure 2. Base-Emitter Saturation Voltage

Collector-Emitter Saturation Voltage

Figure 3. Safe Operating Area

Figure 4. Power Derating

-0.01

-0.1

-1

-10

10

100

1000

V

CE

 = -2V

 

 

h

FE

, DC C

URRENT

 GAI

N

I

C

[A], COLLECTOR CURRENT

-0.1

-1

-10

-0.01

-0.1

-1

V

BE

(sat)

V

CE

(sat)

I

C

 = 10 I

B

 

 

V

BE

(s

a

t)[

V

],

 V

CE

(s

a

t)

[V], SAT

U

R

A

T

IO

N

 V

O

L

T

AG

E

I

C

[A], COLLECTOR CURRENT

-1

-10

-100

-1000

-0.1

-1

-10

-100

100

µ

s

BD538

BD536

BD534

10

µ

s

1m

s

10

m

s

DC

I

C

(max)

 

 

I

C

[A

],

 CO

LLE

CT

O

R

 CURRE

NT

V

CE

[V], COLLECTOR-EMITTER VOLTAGE

0

25

50

75

100

125

150

175

200

0

10

20

30

40

50

60

70

80

 

 

P

C

[W

], PO

W

E

D

ISS

IP

AT

IO

N

T

C

[

o

C], CASE TEMPERATURE

background image

4.50 

±

0.20

9.90 

±

0.20

1.52 

±

0.10

0.80 

±

0.10

2.40 

±

0.20

10.00 

±

0.20

1.27 

±

0.10

ø3.60 

±

0.10

(8.70)

2.80 

±

0.10

15.90 

±

0.20

10.08 

±

0.30

18.95MAX.

(1.70)

(3.70)

(3.00)

(1.46)

(1.00)

(45

°

)

9.20 

±

0.20

13.08 

±

0.20

1.30 

±

0.10

1.30

+0.10

–0.05

0.50

+0.10

–0.05

2.54TYP

[2.54 

±

0.20

]

2.54TYP

[2.54 

±

0.20

]

TO-220

Package Demensions

©2000 Fairchild Semiconductor International

Rev. A, February 2000

BD534/

536/

538

Dimensions in Millimeters

background image

©2000 Fairchild Semiconductor International

Rev. E

TRADEMARKS

The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is

not intended to be an exhaustive list of all such trademarks.

ACEx™

Bottomless™

CoolFET™

CROSSVOLT™

E

2

CMOS™

FACT™

FACT Quiet Series™

FAST

®

FASTr™

GTO™

HiSeC™

ISOPLANAR™

MICROWIRE™

POP™

PowerTrench

®

QFET™

QS™

Quiet Series™

SuperSOT™-3

SuperSOT™-6

SuperSOT™-8

SyncFET™

TinyLogic™

UHC™

VCX™

DISCLAIMER

FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY

PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY

LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN;

NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS.

LIFE SUPPORT POLICY

FAIRCHILD’S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT

DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR

INTERNATIONAL.

As used herein:

1. Life support devices or systems are devices or systems

which, (a) are intended for surgical implant into the body,

or (b) support or sustain life, or (c) whose failure to perform

when properly used in accordance with instructions for use

provided in the labeling, can be reasonably expected to

result in significant injury to the user.

2. A critical component is any component of a life support

device or system whose failure to perform can be

reasonably expected to cause the failure of the life support

device or system, or to affect its safety or effectiveness.

PRODUCT STATUS DEFINITIONS

Definition of Terms

Datasheet Identification

Product Status

Definition

Advance Information

Formative or In 

Design

This datasheet contains the design specifications for

product development. Specifications may change in

any manner without notice.

Preliminary

First Production

This datasheet contains preliminary data, and

supplementary data will be published at a later date.

Fairchild Semiconductor reserves the right to make

changes at any time without notice in order to improve

design.

No Identification Needed

Full Production

This datasheet contains final specifications. Fairchild

Semiconductor reserves the right to make changes at

any time without notice in order to improve design.

Obsolete

Not In Production

This datasheet contains specifications on a product

that has been discontinued by Fairchild semiconductor.

The datasheet is printed for reference information only.