background image

52200TS (KOTO) TA-2077  No.6072–1/4

Any and all SANYO products described or contained herein do not have specifications that can handle

applications that require extremely high levels of reliability, such as life-support systems, aircraft’s

control systems, or other applications whose failure can be reasonably expected to result in serious

physical and/or material damage. Consult with your SANYO representative nearest you before using

any SANYO products described or contained herein in such applications.

SANYO assumes no responsibility for equipment failures that result from using products at values that

exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other

parameters) listed in products specifications of any and all SANYO products described or contained

herein.

N-Channel Silicon MOSFET

Load Switching Applications

Ordering number:ENN6072A

FTD2011

SANYO Electric Co.,Ltd.  Semiconductor Company

TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN

Specifications

Absolute Maximum Ratings 

at Ta = 25˚C

Electrical Characteristics 

at Ta = 25˚C

Package Dimensions

unit:mm

2155A

[FTD2011]

Features

 · Low ON resistance.

 · 2.5V drive.

 · Mounting height 1.1mm.

 · Composite type, facilitating high-density mounting.

1 : Drain1

2 : Source1

3 : Source1

4 : Gate1

5 : Gate2

6 : Source2

7 : Source2

8 : Drain2

SANYO : TSSOP8

Marking : D2011

Continued on next page.

Mounted on a ceramic board (1000mm

2

×

0.8mm) 1unit

Mounted on a ceramic board (1000mm

2

×

0.8mm)

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background image

No.6072-2/4

FTD2011

VDD=10V

ID=4A

RL=2.5

VOUT

VIN

VIN

4V

0V

PW=10

µ

s

D.C.

1%

P.G

50

FTD2011

A11947

D

S

G

Switching Time Test Circuit

Electrical Connection

Continued from preceding page.

A11948

D2 S2 S2 G2

D1 S1 S1 G1

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ID - VGS

RDS(on) - VGS

ID=5A

ID=2A

Ta=25

°

C

VDS=10V

VDS=10V

5

3

2

7

5

3

2

2

3

5

7

2

2

3

5

7

1.5V

VGS=1.0V

Ta=-25

°

C

75

°

C

Ta=-25

°

C

75

°

C

25

°

C

25

°

C

2.5V

2.0V

4.0V

3.0V

3.5V

1.0

0.1

10

1.0

10

0

0

1

2

3

4

6

7

8

9

5

10

0.5

1.0

1.5

2.0

2.5

3.0

0

1

2

3

4

5

10

6

7

8

9

0

0.2

0.4

0.8

0.6

1.0

1.2

2.0

1.6

1.8

1.4

0

0

10

20

30

40

50

70

60

2

4

6

8

10

12

Drain Current, I

D

 –A

Drain Current, I

D

 –A

Drain-to-Source Voltage, VDS   – V

Gate-to-Source Voltage, VGS   – V

Drain Current, ID – A

Forward Transfer Admitance, | y

fs

 |–S

| yf s | - ID

Gate-to-Source Voltage, VGS   – V

Static Drain-to-Source

On-State Resistance, R

DS(on) 

 –

  m

background image

No.6072-3/4

FTD2011

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.3

1.6

SW Time - I D

A  S  O

PD - Ta

td(off)

tf

tr

td(on)

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

2

2

3

5

7

7

2

3

5

7

2

3

5

7

2

3

5

2

3

5

7

0

20

40

60

80

100

120

140

160

<10

µ

s

VDD=10V

ID=5A

Operation in this  area

is limited by RDS(on).

1ms

10ms

100m

s

DC

 operation

2

3

5

7

2

2

3

3

5

7

1.0

10

100

1000

0.01

0.1

1.0

10

0.1

1.0

10

0.1

1.0

10

Ciss, Coss, Crss - VDS

VGS - Qg

f = 1MHz

VDS=10V

2

3

5

7

2

3

5

7

2

3

5

7

Ciss

Coss

Crss

0

2

4

6

8

10

12

14

16

18

20

10

100

1000

10000

0

1

4

8

12

16

20

24

28

32

0

2

3

4

5

6

7

8

9

10

Ciss, Coss, Crss

p

F

Drain-to-Source Voltage,VDS – V

Total Gate Charge, Qg

nC

Gate-to-Source Voltage,

V

GS

–V

Drain-to-Source Voltage,VDS – V

Drain Current, ID – A

Switching Time, SW Time

n

s

Drain Current, I

D

–A

Ambient Temperature, Ta –

°

C

Allowable Power Dissipation, P

D

–W

Ta= 25˚C

1pulse

1unit

Mounted on a ceramic board (1000mm

2

×

0.8mm)

Mounted on a ceramic board (1000mm

2

×

0.8mm)

Total Dissipation

1 unit

R DS(on) - Ta

I F - VSD

2

3

5

7

2

3

5

7

2

3

5

7

2

3

5

7

Ta=75

°

C

ID=2A,V

GS

=2.5V

ID=4A,V

GS

=4V

25

°

C

-25

°

C

-60

0

10

20

30

40

50

60

-40

-20

0

20

40

60

80

100

120

160

140

0.01

0.1

1.0

10

100

0.2

0.4

0.6

0.8

1.0

1.2

0.3

0.5

0.7

0.9

1.1

Static Drain-to-Source

On-State Resistance, R

DS(on) 

 –

  m

Ambient Temperature, Ta –

°

C

Diode Forward Voltage, VSD – V

Forward Current,

I F

–A

background image

  PS  No.6072-4/4

Specifications of any and all SANYO products described or contained herein stipulate the performance, 

characteristics, and functions of the described products in the independent state, and are not guarantees

of the performance, characteristics, and functions of the described products as mounted in the customer's

products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, 

the customer should always evaluate and test devices mounted in the customer's products or equipment.

SANYO Electric Co., Ltd. strives to supply high-quality high-reliability products. However, any and all

semiconductor products fail with some probability. It is possible that these probabilistic failures could 

give rise to accidents or events that could endanger human lives, that could give rise to smoke or fire,

or that could cause damage to other property. When designing equipment, adopt safety measures so

that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective

circuits and error prevention circuits for safe design, redundant design, and structural design.

In the event that any or all SANYO products(including technical data,services) described or 

contained herein are controlled under any of applicable local export control laws and regulations,

such products must not be expor ted without obtaining the expor t license from the author ities

concerned in accordance with the above law.

No part of this publication may be reproduced or transmitted in any form or by any means, electronic or

mechanical, including photocopying and recording, or any information storage or retrieval system,

or otherwise, without the prior written permission of SANYO Electric Co. ,  Ltd. 

Any and all information described or contained herein are subject to change without notice due to

product/technology improvement, etc. When designing equipment, refer to the "Delivery Specification"

for the SANYO product that you intend to use.

Information (including circuit diagrams and circuit parameters) herein is for example only ; it is not

guaranteed for volume production. SANYO believes information herein is accurate and reliable, but

no guarantees are made or implied regarding its use or any infringements of intellectual property rights

or other rights of third parties.

This catalog provides information as of May, 2000. Specifications and information herein are subject to 

change without notice.

FTD2011