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NTE593

Silicon Diode, High Speed Switch

Description:

The NTE593 is a silicon epitaxial high–speed diode in an SOT–23 type surface mount package.  This

device is intended for high–speed switching in hybrid thick–film circuits.

Absolute Maximum Ratings:

Continuous Reverse Voltage, V

R

75V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Repetitive Peak Reverse Voltage, V

RRM

85V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Non–Repetitive Peak Forward Current (t = 1s), I

FSM

500mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Average Rectified Forward Current (Average over any 20ms period, Note 1), I

F(Av)

250mA

. . . . . . 

DC Forward Current (T

A

 

 +25

°

C, Note 2), I

F

250mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Repetitive Peak Forward Current, I

FRM

250mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Total Power Dissipation (T

A

 

 +25

°

C), P

tot

200mW

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Operating Junction Temperature, T

J

+150

°

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Storage Temperature Range, T

stg

–65

°

 to +150

°

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Thermal Resistance, Junction–to–Ambient (Note 2), R

thJA

430K/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . 

Note 1. Measured under pulse conditions:  t

p

 

 0.5ms, I

F(AV)

 = 150mA, t

(av)

 

 1ms, for sinusoidal

operation.

Note 2. Mounted on a ceramic substrate of .314 (8mm) x .393 (10mm) x .027 (0.7mm).

Electrical Characteristics:  (T

J

 = +25

°

C unless otherwise specified)

Parameter

Symbol

Test Conditions

Min

Typ

Max

Unit

Forward Voltage

V

F

I

F

 = 1mA

715

mV

I

F

 = 10mA

855

mV

I

F

 = 50mA

1000

mV

I

F

 = 150mA

1250

mV

Reverse Current

I

R

V

R

 = 75V

1

µ

A

V

R

 = 75V, T

J

 = +150

°

C

50

µ

A

Diode Capacitance

C

d

V

R

 = 0, f = 1MHz

2

pF

Reverse Recovery Time

(When switched from

I

F

 = 30mA to I

R

 = 30mA

t

rr

measured at I

R

 = 1mA,

R

L

 = 100

6

ns

Recovery Charge

(When switched from

I

F

 = 10mA to V

R

 = 5V

Q

s

R

L

 = 100

45

pC

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.098

(2.5)

Max

.074 (1.9)

.118 (3.0) Max

.051

(1.3)

.043 (1.1)

.007 (0.2)

.016 (0.48)

.037 (0.95)

A

K

N.C.