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71

P4C198/198L, P4C198A/198AL

P4C198/P4C198L, P4C198A/P4C198AL

ULTRA HIGH SPEED 16K x 4

STATIC CMOS RAMS

FEATURES

Full CMOS, 6T Cell

High Speed (Equal Access and Cycle Times)

– 10/12/15/20/25 ns (Commercial)

– 12/15/20/25/35 ns (Industrial)

– 15/20/25/35/45 ns (Military)

Low Power Operation (Commercial/Military)

– 715 mW Active – 12/15

– 550/660 mW Active – 20/25/35/45/55

– 193/220 mW Standby (TTL Input)

– 83/110 mW Standby (CMOS Input) P4C198/198A

– 9 mW Standby (CMOS Input)

   P4C198L/198AL (Military)

5V 

±

 10% Power Supply

Data Retention, 10 

µ

A Typical Current from 2.0V

P4C198L/198AL (Military)

Output Enable & Chip Enable Control Functions

– Single Chip Enable P4C198

– Dual Chip Enable P4C198A

Common Inputs and Outputs

Fully TTL Compatible Inputs and Outputs

Standard Pinout (JEDEC Approved)

– 24-Pin 300 mil DIP

– 24-Pin 300 mil SOJ (P4C198 only)

– 28-Pin 350 x 550 mil LCC (P4C198 only)

(P4C198A ONLY)

A

CE

WE

INPUT

DATA

CONTROL

ROW

SELECT

65,536-BIT

MEMORY

ARRAY

COLUMN I/O

A

A

A

(8)

(6)

I/O

1

I/O

2

I/O

3

I/O

4

COLUMN

SELECT

(CE )

1

(CE )

2

OE

1Q97

Means Quality, Service and Speed

FUNCTIONAL BLOCK DIAGRAM

PIN CONFIGURATIONS

The P4C198/L and P4C198A/L are 65,536-bit ultra high-

speed static RAMs organized as 16K x 4. Each device

features an active low Output Enable control to eliminate

data bus contention. The P4C198/L also have an active

low Chip Enable (the P4C198A/L have two Chip Enables,

both active low) for easy system expansion. The CMOS

memories require no clocks or refreshing and have equal

access and cycle times. Inputs are fully TTL-compatible.

The RAMs operate from a single 5V 

±

 10% tolerance

power supply. Data integrity is maintained with supply

DESCRIPTION

voltages down to 2.0V. Current drain is typically 10 

µ

A

from a 2.0V supply.

Access times as fast as 12 nanoseconds are available,

permitting greatly enhanced system operating speeds.

CMOS is used to reduce power consumption to a low 715

mW active, 193 mW standby.

The P4C198/L and P4C198A/L are available in 24-pin 300

mil DIP and SOJ, and 28-pin 350 x 550 mil LCC packages

providing excellent board level densities.

DIP (P4, D4), SOJ (J4)

TOP VIEW

P4C198 (P4C198A)

LCC (L5)

TOP VIEW

P4C198 ONLY

I/O2

C E

 

A7

A6

A5

A4

A3

A2

A13

A12

A11

NC

4

5

6

7

8

9

10

11

12

24

23

22

21

20

19

18

25

26

A10

A9

2

28

A

0

NC

NC

V

CC

13

14 15 16

OE

GND

NC

WE

I/O

1

1

27

3

1 7

A1

A8

I/O3

I/O

NC

A4

A7

A0

A1

A2

A3

A5

A6

A13

A12

A11

A10

A9

NC (

C E

2)

I/O4

VCC

W E

GND

A8

OE

1

2

3

4

5

6

7

8

9

1 0

11

1 2

24

23

22

21

20

19

18

17

16

15

14

13

I/O3

I/O2

I/O1

C E

 (

C E

1)

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72

P4C198/198L, P4C198A/198AL

CE

1

CE

2

 

 V

IH

                     Mil.

V

CC 

= Max.,               Ind./Com’l.

f = 0, Outputs Open

V

IN

 

 V

LC

 or V

IN

 

 V

HC

MAXIMUM RATINGS

(1)

Symbol

Parameter

Value

Unit

V

CC

Power Supply Pin with

–0.5 to +7

V

Respect to GND

Terminal Voltage with

–0.5 to

V

TERM

Respect to GND

V

CC

 +0.5

V

(up to 7.0V)

T

A

Operating Temperature

–55 to +125

°

C

Symbol

Parameter

Value

Unit

T

BIAS

Temperature Under

–55 to +125

°

C

Bias

T

STG

Storage Temperature

–65 to +150

°

C

P

T

Power Dissipation

1.0

W

I

OUT

DC Output Current

50

mA

Notes:

1. Stresses greater than those listed under MAXIMUM RATINGS may

cause permanent damage to the device.  This is a stress rating only

and functional operation of the device at these or any other conditions

above those indicated in the operational sections of this specification

is not implied.  Exposure to MAXIMUM ratingconditions for extended

periods may affect reliability.

2. Extended temperature operation guaranteed with 400 linear feet per

minute of air flow.

3. Transient inputs with V

IL

 and I

IL

 not more negative than –3.0V and

–100mA, respectively, are permissible for pulse widths up to 20 ns.

4. This parameter is sampled and not 100% tested.

RECOMMENDED OPERATING

TEMPERATURE AND SUPPLY VOLTAGE

 I

SB

Standby Power Supply

Current (TTL Input Levels)

CE

1

CE

2

 

 V

IH

                      Mil.

V

CC 

= Max .,              Ind./Com’l.

f = Max., Outputs Open

___

___

40

35

___

___

___

___

20

15

40

n/a

1.5

n/a

mA

mA

___

___

Standby Power Supply

Current

(CMOS Input Levels)

 I

SB1

Commercial

Grade(2)

Ambient

Temperature

GND

V

CC

0

°

C to +70

°

C

–40

°

C to +85

°

C

0V

0V

5.0V 

±

 10%

5.0V 

±

 10%

0V

5.0V 

±

 10%

–55

°

C to +125

°

C

Military

Symbol

C

IN

C

OUT

Parameter

Input Capacitance

Output Capacitance

Conditions

V

IN

 = 0V

V

OUT

 = 0V

5

7

Unit

pF

pF

CAPACITANCES

(4)

V

CC

 = 5.0V, T

A

 = 25

°

C, f = 1.0MHz

n/a = Not Applicable

Symbol

DC ELECTRICAL CHARACTERISTICS

Over recommended operating temperature and supply voltage

(2)

V

IH

V

IL

V

HC

V

LC

V

CD

V

OL

V

OH

I

LI

I

LO

Parameter

Input High Voltage

Input Low Voltage

CMOS Input High Voltage

CMOS Input Low Voltage

Input Clamp Diode Voltage

Output Low Voltage

(TTL Load)

Output High Voltage

(TTL Load)

Input Leakage Current

Output Leakage Current

Test Conditions

V

CC

 = Min., I

IN

 = 18 mA

I

OL

 = +10 mA, V

CC

 = Min.

I

OL

 = +8 mA, V

CC

 = Min.

I

OH

 = –4 mA, V

CC

 = Min.

V

CC

 = Max.                            Mil.

V

IN

 = GND to V

CC

             Com’l.

V

CC

 = Max., 

CE

 = V

IH

,           Mil.

V

OUT 

= GND to V

CC

           Com’l.

P4C198 / 198A

Min

2.2

–0.5

(3)

V

CC

 –0.2

–0.5

(3)

2.4

–10

–5

–10

–5

Max

V

CC

 +0.5

0.8

V

CC

 +0.5

0.2

–1.2

0.4

+10

+5

+10

+5

P4C198L / 198AL

Min

Max

2.2

–0.5

(3)

V

CC

 –0.2

–0.5(3)

2.4

–5

n/a

–5

n/a

V

CC

 +0.5

0.8

V

CC

 +0.5

0.2

0.4

–1.2

+5

n/a

+5

n/a

Unit

V

V

V

V

V

V

V

V

µ

A

µ

A

Typ.

Industrial

0.5

0.5

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73

P4C198/198L, P4C198A/198AL

*V

CC

 = 5.5V.  Tested with outputs open.  f = Max.  Switching inputs are 0V and 3V.

198: 

CE

 = V

IL

OE

 = V

IH

198A: 

CE

1

 = V

IL

CE

2

 = V

IL

OE

 = V

IH

DATA RETENTION CHARACTERISTICS (P4C198L/P4C198AL Military Temperature Only)

Typ.*

Max

Symbol

Parameter

Test Condition

Min

V

CC

=

V

CC

=

Unit

2.0V

3.0V

2.0V

3.0V

V

DR

V

CC

 for Data Retention

2.0

V

I

CCDR

Data Retention Current

10

15

600

900

µ

A

t

CDR

Chip Deselect to

CE

 

V

CC 

– 0.2V,

0

ns

Data Retention Time

V

IN 

 V

CC 

– 0.2V or

t

R

Operation Recovery Time

t

RC

§

ns

*

T

A

 = +25

°

C

§

t

RC

 = Read Cycle Time

This parameter is guaranteed but not tested.

V

IN 

 0.2V

DATA RETENTION WAVEFORM

V

CC

V

IH

t

CDR

4.5V

V

DR

 2V

4.5V

t

R

V

DR

V

IH

DATA RETENTION MODE

CE

(

CE

, or CE

2

 for the P4C198AL)

I

CC

Symbol

Parameter

Temperature

Range

Dynamic Operating Current*

Commercial

Industrial

Military

–10

N/A

–12

–15

–20

–25

–35

–45

Unit

N/A

mA

mA

mA

POWER DISSIPATION CHARACTERISTICS VS. SPEED

N/A

150

155

160

170

180

N/A

170

160

155

150

145

180

170

160

155

150

N/A

N/A

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74

P4C198/198L, P4C198A/198AL

Sym.

Parameter

Unit

-10

-12

-15

-20

-25

-35

-45

Min Max Min

Max

Min Max Min

Max Min Max Min

Max Min

Max

t

RC

Read Cycle Time

10

12

15

20

25

35

45

ns

t

AA

Address Access

10

12

15

20

25

35

45

ns

Time

t

AC

Chip Enable

10

12

15

20

25

35

45

ns

Access Time

t

OH

Output Hold from

2

2

2

2

2

2

2

ns

Address Change

t

LZ

Chip Enable to

2

2

2

2

2

2

2

ns

Output in Low Z

t

HZ

Chip Disable to

6

7

8

10

10

14

15

ns

Output in High Z

t

OE

Output Enable

6

 7

9

12

15

25

30

ns

Low to Data Valid

t

OLZ

Output Enable to

2

2

2

2

2

2

2

ns

Output in Low Z

t

OHZ

Output Disable to

6

7

9

9

10

14

15

ns

Output in High Z

t

PU

Chip Enable to

0

0

0

0

0

0

0

ns

Power Up Time

t

PD

Chip Disable to

10

12

15

20

25

35

45

ns

Power Down Time

AC CHARACTERISTICS—READ CYCLE

(V

CC

 = 5V 

±

 10%, All Temperature Ranges)

(2)

READ CYCLE NO.1 (

O E

O E

O E

O E

O E 

controlled)

(5)

ADDRESS

O E

tRC

DATAOUT 

(10)

tAA

tOE

tOH

C E

tOLZ

tAC

tLZ

tOHZ

tHZ

(9)

(9)

(9)

(9)

(12)

Notes:

5.

WE

 is HIGH for READ cycle.

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75

P4C198/198L, P4C198A/198AL

t

ADDRESS

DATA OUT

AA

t

t

OH

DATA VALID

PREVIOUS DATA VALID

(10)

RC

1520 05

READ CYCLE NO. 2 (ADDRESS Controlled)

(5,6)

READ CYCLE NO. 3 (

C E

C E

C E

C E

C E

(12)

 Controlled)

(5,7,8)

10. Read Cycle Time is measured from the last valid address to

the first transitioning address.

11. Transitions caused by a chip enable control have similar

delays irrespective of whether 

CE

1

 or 

CE

2

 causes them

(P4C198A/L).

12.

CE

1

CE

2

 for P4C198A/L.

Notes:

6.

CE

 (

CE

1

 

CE

2

 for P4C198A/L) and 

OE

 are LOW READ cycle.

7.

OE

 is LOW for the cycle.

8. ADDRESS must be valid prior to, or coincident with 

CE

  (

CE

1

and 

CE

2

  for P4C198A/L) transition LOW.

9. Transition is measured 

±

 200mV from steady state voltage

prior to change, with loading as specified in Figure 1.

tAC

C E

DATA OUT

tRC

tLZ

DATA VALID

ICC

ISB

t

PU

HIGH IMPEDANCE

tPD

tHZ

CURRENT

VCC SUPPLY

(9,11)

(9,11)

(11)

(11)

(11)

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76

P4C198/198L, P4C198A/198AL

-10

-12

-15

-20

-25

-35

-45

Min Max Min

Max

Min Max Min

Max Min Max Min

Max Min

Max

t

WC

Write Cycle Time

10

12

13

15

20

30

40

ns

t

CW

Chip Enable Time

 7

8

10

15

20

30

35

ns

to End of Write

t

AW

Address Valid to

 8

8

10

15

20

25

35

ns

End of Write

t

AS

Address Set-up

0

0

0

0

0

0

0

ns

Time

t

WP

Write Pulse

8

9

10

12

20

25

35

ns

Width

t

AH

Address Hold

0

0

0

0

0

0

0

ns

Time from End

of Write

t

DW

Data Valid to End

7

6

7

10

13

15

20

ns

of Write

t

DH

Data Hold Time

0

0

0

0

0

0

0

ns

t

WZ

Write Enable to

7

6

7

8

10

10

15

ns

Output in High Z

t

OW

Output Active

3

3

3

3

3

3

3

ns

from End of Write

AC CHARACTERISTICS—WRITE CYCLE

(V

CC

 = 5V 

±

 10%, All Temperature Ranges)

(2)

Sym.

Parameter

Unit

OHZ

ADDRESS

CE

t

WC

HIGH IMPEDANCE

WE

DATA IN

DATA OUT

DATA UNDEFINED

1520 07

(16)

t

CW

t

AW

t

WP

t

DW

t

AH

t

DH

t

(12)

(9)

OE

t

AS

WRITE CYCLE NO. 1 (With 

O E

O E

O E

O E

O E

 high)

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77

P4C198/198L, P4C198A/198AL

WRITE CYCLE NO. 2 (

W E

W E

W E

W E

W E

 CONTROLLED)

(13,14)

1520  08

tDW

tAH

W E

ADDRESS

C E 

(12)

DATA OUT

DATA IN

tWC

DATA VALID

HIGH IMPEDANCE

(16)

tAS

tCW

tAW

t

WP

tDH

tWR

WRITE CYCLE NO. 3 (

C E

C E

C E

C E

C E

(12)

 CONTROLLED)

(13,14)

ADDRESS

C E

tWC

DATA VALID

HIGH IMPEDANCE

W E

DATA IN

DATA OUT

DATA UNDEFINED

(16)

(9)

tCW

tAW

tWP

tDW

tWR

tAH

tDH

tOW

tAS

tWZ

(9,15)

(11)

(12)

Notes:

13.

CE

 (

CE

1

CE

2

 for P4C198A/L) and 

WE

 must be LOW for WRITE

cycle.

14.

OE

 is LOW for this WRITE cycle.

15. If 

CE

 (

CE

1

 or 

CE

2

 for P4C198A/L) goes HIGH simultaneously with

WE

 HIGH, the output remains in  a high impedance state.

16. Write Cycle Time is measured from the last valid address to the first

transitioning address.

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78

P4C198/198L, P4C198A/198AL

TRUTH TABLES

P4C198/L

P4C198A/L

C E

C E

C E

C E

C E

1

C E

C E

C E

C E

C E

2

W E

W E

W E

W E

W E

O E

O E

O E

O E

O E

Mode

Output

H

X

X

X

Standby

High Z

X

H

X

X

Standby

High Z

L

L

H

H

Output Inhibit

High Z

L

L

H

L

READ

D

OUT

L

L

L

X

WRITE

D

IN

C E

C E

C E

C E

C E

W E

W E

W E

W E

W E

O E

O E

O E

O E

O E

Mode

Output

H

X

X

Standby

High Z

L

H

H

Output Inhibit

High Z

L

H

L

READ

D

OUT

L

L

X

WRITE

D

IN

Input Pulse Levels

GND to 3.0V

Input Rise and Fall Times

3ns

Input Timing Reference Level

1.5V

Output Timing Reference Level

1.5V

Output Load

See Figures 1 and 2

* including scope and test fixture.

Note:

Because of the ultra-high speed of the P4C198/L and P4C198A/L, care

must be taken when testing this device; an inadequate setup can cause

a normal functioning part to be rejected as faulty.  Long high-inductance

leads that cause supply bounce must be avoided by bringing the V

CC

 and

ground planes directly up to the contactor fingers.  A 0.01 

µ

F high

Figure 1.  Output Load

Figure 2.  Thevenin Equivalent

frequency capacitor is also required between V

CC

 and ground.  To avoid

signal reflections, proper termination must be used; for example, a 50

test environment should be terminated into a 50

 load with 1.73V

(Thevenin Voltage) at the comparator input, and a 116

 resistor must be

used in series with D

OUT

 to match 166

 (Thevenin Resistance).

AC TEST CONDITIONS

DOUT

255

480

+5V

30pF* (5pF* for t

HZ

, t

LZ

t

WZ

OW

and  t

,

)

30pF* (5pF* for tHZ, tLZ, tOHZ, tOLZ,

            tWZ and tOW)

VTH = 1.73V

RTH = 166.5

DOUT

30pF* (5pF* for tHZ, tLZ, tOHZ, tOLZ,

            tWZ and tOW)

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79

P4C198/198L, P4C198A/198AL

* Military temperature range with MIL-STD-883, Class B processing.

N/A = Not available

SELECTION GUIDE

The P4C198 and P4C198A are available in the following temperature, speed and package options.

Temperature

Range

Military

Processed*

Commercial

Industrial

Military Temp.

Speed (ns)

Package

Plastic DIP

Plastic SOJ 

(P4C198 Only)

CERDIP

LCC 

(P4C198 Only)

Plastic DIP

Plastic SOJ 

(P4C198 Only)

CERDIP

LCC 

(P4C198 Only)

–10PC

–10JC

N/A

N/A

N/A

N/A

N/A

N/A

12

10

–12PC

–12JC

–12PI

–12JI

N/A

N/A

N/A

N/A

15

–15PC

–15JC

–15PI

–15JI

–15DM

–15LM

–15DMB

–15LMB

20

–20PC

–20JC

–20PI

–20JI

–20DM

–20LM

–20DMB

–20LMB

25

–25PC

–25JC

–25PI

–25JI

–25DM

–25LM

–25DMB

–25LMB

35

N/A

N/A

–35PI

–35JI

–35DM

–35LM

–35DMB

–35LMB

45

N/A

N/A

–45DM

–45LM

–45DMB

–45LMB

N/A

N/A

ORDERING INFORMATION

PACKAGE SUFFIX

Package

Suffix

P

Plastic DIP, 300 mil wide standard

J

Plastic SOJ, 300 mil wide standard

L

Leadless Chip Carrier (ceramic)

D

CERDIP, 300 mil wide standard

TEMPERATURE RANGE SUFFIX

Temperature

Range Suffix

C

Commercial Temperature Range,

0

°

C to +70

°

C.

I

Industrial Temperature Range

–40

°

C to +85

°

C.

M

Military Temperature Range,

–55

°

C to +125

°

C.

MB

Mil. Temp. with MIL-STD-883D

Class B compliance

Description

Description

P4C

Static RAM Prefix

198A

l

ss

p

t

Temperature Range

Package Code

Speed (Access/Cycle Time)

Low Power Designator: Blank = None, L = Low Power

Device Number

= Ultra-low standby power designator L, if needed.

= Speed (access/cycle time in ns), e.g., 25, 35

= Package code, i.e., P, J, L, D.

= Temperature range, i.e., C, M, MB.

l

ss

p

t

P4C

198

The P4C198 and P4C198A are available to Standardized Military

Drawings 5962-86859, 5962-89891 and 5962-89892.

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80

P4C198/198L, P4C198A/198AL