background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

1

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

D

Wide Range of Supply Voltages

1.4 V to 16 V

D

True Single-Supply Operation

D

Common-Mode Input Voltage Range

Includes the Negative Rail

D

Low  Noise . . . 30  nV/

Hz Typ at 1 kHz

(High Bias)

D

ESD Protection Exceeds 2000 V Per

MIL-STD-833C, Method 3015.1

     

description

The TLC251C, TLC251AC, and TLC251BC are

low-cost, low-power programmable operational

amplifiers designed to operate with single or dual

supplies. Unlike traditional metal-gate CMOS

operational amplifiers, these devices utilize Texas

Instruments silicon-gate LinCMOS

 process,

giving them stable input offset voltages without

sacrificing the advantages of metal-gate CMOS.

This series of parts is available in selected grades of input offset voltage and can be nulled with one external

potentiometer. Because the input common-mode range extends to the negative rail and the power consumption

is extremely low, this family is ideally suited for battery-powered or energy-conserving applications. A

bias-select pin can be used to program one of three ac performance and power-dissipation levels to suit the

application. The series features operation down to a 1.4-V supply and is stable at unity gain.

These devices have internal electrostatic-discharge (ESD) protection circuits that prevent catastrophic failures

at voltages up to 2000 V as tested under MIL-STD-883C, Method 3015.1. However, care should be exercised

in handling these devices as exposure to ESD may result in a degradation of the device parametric

performance.

Because of the extremely high input impedance and low input bias and offset currents, applications for the

TLC251C series include many areas that have previously been limited to BIFET and NFET product types. Any

circuit using high-impedance elements and requiring small offset errors is a good candidate for cost-effective

use of these devices. Many features associated with bipolar technology are available with LinCMOS

operational amplifiers without the power penalties of traditional bipolar devices. Remote and inaccessible

equipment applications are possible using the low-voltage and low-power capabilities of the TLC251C series.

In addition, by driving the bias-select input with a logic signal from a microprocessor, these operational amplifiers

can have software-controlled performance and power consumption. The TLC251C series is well suited to solve

the difficult problems associated with single battery and solar cell-powered applications.

The TLC251C series is characterized for operation from 0

°

C to 70

°

C.

AVAILABLE OPTIONS

VIOmax

PACKAGED DEVICES

CHIP FORM

TA

VIOmax

AT 25

°

C

SMALL OUTLINE

(D)

PLASTIC DIP

(P)

CHIP FORM

(Y)

10 mV

TLC251CD

TLC251CP

TLC251Y

0

°

C to 70

°

C

5 mV

TLC251ACD

TLC251ACP

2 mV

TLC251BCD

TLC251BCP

The D package is available taped and reeled. Add the suffix R to the device type (e.g., TLC251CDR). Chips are

tested at 25

°

C.

Copyright 

©

 1994, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

 

LinCMOS is a trademark of Texas Instruments Incorporated.

1

2

3

4

8

7

6

5

OFFSET N1

IN –

IN +

V

DD –

/GND

BIAS SELECT

V

DD

OUT

OFFSET N2

D OR P PACKAGE

(TOP VIEW)

symbol

+

OUT

BIAS SELECT

IN +

IN –

OFFSET N1

OFFSET N2

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

2

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

schematic

Current

Control

ESD-

Protective

Network

ESD-

Protective

Network

ESD-

Protective

Network

VDD

IN +

IN –

OFFSET

N1

OFFSET

N2

VDD – /GND

OUT

BIAS

SELECT

7

3

2

1

5

4

6

8

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

3

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TLC251Y chip information

These chips, properly assembled, display characteristics similar to the TLC251C. Thermal compression or

ultrasonic bonding may be used on the doped-aluminum bonding pads. Chips may be mounted with conductive

epoxy or a gold-silicon preform.

BONDING PAD ASSIGNMENTS

CHIP THICKNESS: 15 TYPICAL

BONDING PADS: 4 

×

 4 MINIMUM

TJMAX = 150

°

C

TOLERANCES ARE 

±

10%.

ALL DIMENSIONS ARE IN MILS.

PIN (4) IS INTERNALLY CONNECTED

TO BACKSIDE OF CHIP.

+

OUT

BIAS SELECT

 IN +

IN –

OFFSET N1

OFFSET N2

VDD

VDD – /GND

(7)

(6)

(8)

(3)

(2)

(1)

(5)

(4)

48

55

(2)

(1)

(8)

(7)

(6)

(5)

(3)

(4)

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

4

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage, V

DD

 (see Note 1) 

18 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Differential input voltage, V

ID

 (see Note 2) 

±

18 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Input voltage range, V

I

 (any input) 

– 0.3 V to 18 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Duration of short circuit at (or below) 25

°

C free-air temperature (see Note 3) 

unlimited

. . . . . . . . . . . . . . . . . . 

Continuous total dissipation 

See Dissipation Rating Table

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Operating free-air temperature range, T

A

 

0

°

C to 70

°

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Storage temperature range 

– 65

°

C to 150

°

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds 

260

°

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:

1. All voltage values, except differential voltages, are with respect to VDD – /GND.

2. Differential voltages are at IN+ with respect to IN –.

3. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure the maximum dissipation

rating is not exceeded.

DISSIPATION RATING TABLE

PACKAGE

TA 

 25

°

C

POWER RATING

DERATING FACTOR

ABOVE TA = 25

°

C

TA = 70

°

C

POWER RATING

D

725 mW

5.8 mW/

°

C

464 mW

P

1000 mW

8.0 mW/

°

C

640 mW

recommended operating conditions

MIN

MAX

UNIT

Supply voltage, VDD

1.4

16

V

VDD = 1.4 V

0

0.2

Common mode input voltage VIC

VDD = 5 V

– 0.2

4

V

Common-mode input voltage, VIC

VDD = 10 V

– 0.2

9

V

VDD = 16 V

– 0.2

14

Operating free-air temperature, TA

0

70

°

C

Bias-select voltage

See Application 

Information

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

5

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

HIGH-BIAS MODE

electrical characteristics at specified free-air temperature

TEST

TLC251C, TLC251AC, TLC251BC

PARAMETER

TEST

CONDITIONS

TA†

VDD = 5 V

VDD = 10 V

UNIT

CONDITIONS

A

MIN

TYP

MAX

MIN

TYP

MAX

TLC251C

25

°

C

1.1

10

1.1

10

TLC251C

VO = 1 4 V

Full range

12

12

VIO

Input offset voltage

TLC251AC

VO = 1.4 V,

VIC = 0 V,

25

°

C

0.9

5

0.9

5

mV

VIO

Input offset voltage

TLC251AC

IC

,

RS = 50 

,

R

10 k

Full range

6.5

6.5

mV

TLC251BC

RL = 10 k

25

°

C

0.34

2

0.39

2

TLC251BC

Full range

3

3

α

VIO

Average temperature coefficient of

input offset voltage

25

°

C to

70

°

C

1.8

2

µ

V/

°

C

IIO

Input offset current (see Note 4)

VO = VDD/2,

25

°

C

0.1

0.1

pA

IIO

Input offset current (see Note 4)

O

DD ,

VIC = VDD/2

70

°

C

7

300

7

300

pA

IIB

Input bias current (see Note 4)

VO = VDD/2,

25

°

C

0.6

0.7

pA

IIB

Input bias current (see Note 4)

O

DD ,

VIC = VDD/2

70

°

C

40

600

50

600

pA

VICR

Common-mode input voltage

25

°

C

– 0.2

to

4

– 0.3

to

4.2

– 0.2

to

9

– 0.3

to

9.2

V

VICR

g

range (see Note 5)

Full range

– 0.2

to

3.5

– 0.2

to

8.5

V

V

100

V

25

°

C

3.2

3.8

8

8.5

VOH

High-level output voltage

VID = 100 mV,

RL = 10 k

0

°

C

3

3.8

7.8

8.5

V

RL = 10 k

70

°

C

3

3.8

7.8

8.4

V

100

V

25

°

C

0

50

0

50

VOL

Low-level output voltage

VID = – 100 mV,

IOL = 0

0

°

C

0

50

0

50

mV

IOL = 0

70

°

C

0

50

0

50

L

i

l diff

ti l

lt

R

10 k

25

°

C

5

23

10

36

AVD

Large-signal differential voltage

amplification

RL = 10 k

,

See Note 6

0

°

C

4

27

7.5

42

V/mV

am lification

See Note 6

70

°

C

4

20

7.5

32

25

°

C

65

80

65

85

CMRR

Common-mode rejection ratio

VIC = VICRmin

0

°

C

60

84

60

88

dB

70

°

C

60

85

60

88

S

l

lt

j

ti

ti

V

5 V t 10 V

25

°

C

65

95

65

95

kSVR

Supply-voltage rejection ratio

(

VDD/

VIO)

VDD = 5 V to 10 V,

VO = 1 4 V

0

°

C

60

94

60

94

dB

(

VDD/

VIO)

VO = 1.4 V

70

°

C

60

96

60

96

II(SEL) Input current (BIAS SELECT)

VI(SEL) = 0

25

°

C

– 1.4

– 1.9

µ

A

VO = VDD/2,

25

°

C

675

1600

950

2000

IDD

Supply current

VO   VDD/2,

VIC = VDD/2,

N l

d

0

°

C

775

1800

1125

2200

µ

A

No load

70

°

C

575

1300

750

1700

† Full range is 0

°

C to 70

°

C.

NOTES:

4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

6

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

HIGH-BIAS MODE

operating characteristics, V

DD

 = 5 V

PARAMETER

TEST CONDITIONS

TA

TLC251C, TLC251AC,

TLC251BC

UNIT

A

MIN

TYP

MAX

25

°

C

3.6

VI(PP) = 1 V

0

°

C

4

SR

Slew rate at unity gain

RL = 10 k

CL = 20 pF

(

)

70

°

C

3

V/

µ

s

SR

Slew rate at unity gain

RL = 10 k

,

CL = 20 pF

25

°

C

2.9

V/

µ

s

VI(PP) = 2.5 V

0

°

C

3.1

(

)

70

°

C

2.5

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 

25

°

C

25

nV/

Hz

25

°

C

320

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

RL = 10 k

0

°

C

340

kHz

70

°

C

260

25

°

C

1.7

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF

0

°

C

2

MHz

70

°

C

1.3

25

°

C

46

°

φ

m

Phase margin

VI = 10 mV,

f = B1,

CL = 20 pF

0

°

C

47

°

70

°

C

44

°

operating characteristics, V

DD

 = 10 V

PARAMETER

TEST CONDITIONS

TA

TLC251C, TLC251AC,

TLC251BC

UNIT

A

MIN

TYP

MAX

25

°

C

5.3

VI(PP) = 1 V

0

°

C

5.9

SR

Slew rate at unity gain

RL = 10 k

CL = 20 pF

(

)

70

°

C

4.3

V/

µ

s

SR

Slew rate at unity gain

RL = 10 k

,

CL = 20 pF

25

°

C

4.6

V/

µ

s

VI(PP) = 5.5 V

0

°

C

5.1

(

)

70

°

C

3.8

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 

25

°

C

25

nV/

Hz

25

°

C

200

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

RL = 10 k

0

°

C

220

kHz

70

°

C

140

25

°

C

2.2

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF

0

°

C

2.5

MHz

70

°

C

1.8

25

°

C

49

°

φ

m

Phase margin

VI = 10 mV,

f = B1,

CL = 20 pF

0

°

C

50

°

70

°

C

46

°

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

7

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

electrical characteristics at specified free-air temperature

TEST

TLC251C, TLC251AC, TLC251BC

PARAMETER

TEST

CONDITIONS

TA†

VDD = 5 V

VDD = 10 V

UNIT

CONDITIONS

A

MIN

TYP

MAX

MIN

TYP

MAX

TLC251C

25

°

C

1.1

10

1.1

10

TLC251C

VO = 1 4 V

Full range

12

12

VIO

Input offset voltage

TLC251AC

VO = 1.4 V,

VIC = 0 V,

25

°

C

0.9

5

0.9

5

mV

VIO

Input offset voltage

TLC251AC

IC

,

RS = 50 

,

R

10 k

Full range

6.5

6.5

mV

TLC251BC

RL = 10 k

25

°

C

0.34

2

0.39

2

TLC251BC

Full range

3

3

α

VIO

Average temperature coefficient of

input offset voltage

25

°

C to

70

°

C

1.7

2.1

µ

V/

°

C

IIO

Input offset current (see Note 4)

VO = VDD/2,

25

°

C

0.1

0.1

pA

IIO

Input offset current (see Note 4)

O

DD ,

VIC = VDD/2

70

°

C

7

300

7

300

pA

IIB

Input bias current (see Note 4)

VO = VDD/2,

25

°

C

0.6

0.7

pA

IIB

Input bias current (see Note 4)

O

DD ,

VIC = VDD/2

70

°

C

40

600

50

600

pA

VICR

Common-mode input voltage

25

°

C

– 0.2

to

4

– 0.3

to

4.2

– 0.2

to

9

– 0.3

to

9.2

V

VICR

g

range (see Note 5)

Full range

– 0.2

to

3.5

– 0.2

to

8.5

V

V

100

V

25

°

C

3.2

3.9

8

8.7

VOH

High-level output voltage

VID = 100 mV,

RL = 10 k

0

°

C

3

3.9

7.8

8.7

V

RL = 10 k

70

°

C

3

4

7.8

8.7

V

100

V

25

°

C

0

50

0

50

VOL

Low-level output voltage

VID = – 100 mV,

IOL = 0

0

°

C

0

50

0

50

mV

IOL = 0

70

°

C

0

50

0

50

L

i

l diff

ti l

lt

R

10 k

25

°

C

25

170

25

275

AVD

Large-signal differential voltage

amplification

RL = 10 k

,

See Note 6

0

°

C

15

200

15

320

V/mV

am lification

See Note 6

70

°

C

15

140

15

230

25

°

C

65

91

65

94

CMRR

Common-mode rejection ratio

VIC = VICRmin

0

°

C

60

91

60

94

dB

70

°

C

60

92

60

94

S

l

lt

j

ti

ti

V

5 V t 10 V

25

°

C

70

93

70

93

kSVR

Supply-voltage rejection ratio

(

VDD/

VIO)

VDD = 5 V to 10 V,

VO = 1 4 V

0

°

C

60

92

60

92

dB

(

VDD/

VIO)

VO = 1.4 V

70

°

C

60

94

60

94

II(SEL) Input current (BIAS SELECT)

VI(SEL) = VDD/2

25

°

C

– 130

– 160

nA

VO = VDD/2,

25

°

C

105

280

143

300

IDD

Supply current

VO   VDD/2,

VIC = VDD/2,

N l

d

0

°

C

125

320

173

400

µ

A

No load

70

°

C

85

220

110

280

† Full range is 0

°

C to 70

°

C.

NOTES:

4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

8

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

MEDIUM-BIAS MODE

operating characteristics, V

DD

 = 5 V

PARAMETER

TEST CONDITIONS

TA

TLC251C, TLC251AC,

TLC251BC

UNIT

A

MIN

TYP

MAX

25

°

C

0.43

VI(PP) = 1 V

0

°

C

0.46

SR

Slew rate at unity gain

RL = 100 k

CL = 20 pF

(

)

70

°

C

0.36

V/

µ

s

SR

Slew rate at unity gain

RL = 100 k

,

CL = 20 pF

25

°

C

0.40

V/

µ

s

VI(PP) = 2.5 V

0

°

C

0.43

(

)

70

°

C

0.34

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 

25

°

C

32

nV/

Hz

25

°

C

55

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

RL = 100 k

0

°

C

60

kHz

70

°

C

50

25

°

C

525

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF

0

°

C

600

kHz

70

°

C

400

25

°

C

40

°

φ

m

Phase margin

VI = 10 mV,

f = B1,

CL = 20 pF

0

°

C

41

°

70

°

C

39

°

operating characteristics, V

DD

 = 10 V

PARAMETER

TEST CONDITIONS

TA

TLC251C, TLC251AC,

TLC251BC

UNIT

A

MIN

TYP

MAX

25

°

C

0.62

VI(PP) = 1 V

0

°

C

0.67

SR

Slew rate at unity gain

RL = 100 k

CL = 20 pF

(

)

70

°

C

0.51

V/

µ

s

SR

Slew rate at unity gain

RL = 100 k

,

CL = 20 pF

25

°

C

0.56

V/

µ

s

VI(PP) = 5.5 V

0

°

C

0.61

(

)

70

°

C

0.46

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 

25

°

C

32

nV/

Hz

25

°

C

35

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

RL = 100 k

0

°

C

40

kHz

70

°

C

30

25

°

C

635

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF

0

°

C

710

kHz

70

°

C

510

25

°

C

43

°

φ

m

Phase margin

VI = 10 mV,

f = B1,

CL = 20 pF

0

°

C

44

°

70

°

C

42

°

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

9

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

LOW-BIAS MODE

electrical characteristics at specified free-air temperature

TEST

TLC251C, TLC251AC, TLC251BC

PARAMETER

TEST

CONDITIONS

TA†

VDD = 5 V

VDD = 10 V

UNIT

CONDITIONS

A

MIN

TYP

MAX

MIN

TYP

MAX

TLC251C

25

°

C

1.1

10

1.1

10

TLC251C

VO = 1 4 V

Full range

12

12

VIO

Input offset voltage

TLC251AC

VO = 1.4 V,

VIC = 0 V,

25

°

C

0.9

5

0.9

5

mV

VIO

Input offset voltage

TLC251AC

IC

,

RS = 50 

,

R

10 M

Full range

6.5

6.5

mV

TLC251BC

RL = 10 M

25

°

C

0.24

2

0.26

2

TLC251BC

Full range

3

3

α

VIO

Average temperature coefficient of

input offset voltage

25

°

C to

70

°

C

1.1

1

µ

V/

°

C

IIO

Input offset current (see Note 4)

VO = VDD/2,

25

°

C

0.1

0.1

pA

IIO

Input offset current (see Note 4)

O

DD ,

VIC = VDD/2

70

°

C

7

300

7

300

pA

IIB

Input bias current (see Note 4)

VO = VDD/2,

25

°

C

0.6

0.7

pA

IIB

Input bias current (see Note 4)

O

DD ,

VIC = VDD/2

70

°

C

40

600

50

600

pA

VICR

Common-mode input voltage

25

°

C

– 0.2

to

4

– 0.3

to

4.2

– 0.2

to

9

– 0.3

to

9.2

V

VICR

g

range (see Note 5)

Full range

– 0.2

to

3.5

– 0.2

to

8.5

V

V

100

V

25

°

C

3.2

4.1

8

8.9

VOH

High-level output voltage

VID = 100 mV,

RL = 1 M

0

°

C

3

4.1

7.8

8.9

V

RL = 1 M

70

°

C

3

4.2

7.8

8.9

V

100

V

25

°

C

0

50

0

50

VOL

Low-level output voltage

VID = – 100 mV,

IOL = 0

0

°

C

0

50

0

50

mV

IOL = 0

70

°

C

0

50

0

50

L

i

l diff

ti l

lt

R

1 M

25

°

C

50

520

50

870

AVD

Large-signal differential voltage

amplification

RL = 1 M

,

See Note 6

0

°

C

50

700

50

1030

V/mV

am lification

See Note 6

70

°

C

50

380

50

660

25

°

C

65

94

65

97

CMRR

Common-mode rejection ratio

VIC = VICRmin

0

°

C

60

95

60

97

dB

70

°

C

60

95

60

97

S

l

lt

j

ti

ti

V

5 V t 10 V

25

°

C

70

97

70

97

kSVR

Supply-voltage rejection ratio

(

VDD/

VIO)

VDD = 5 V to 10 V,

VO = 1 4 V

0

°

C

60

97

60

97

dB

(

VDD/

VIO)

VO = 1.4 V

70

°

C

60

98

60

98

II(SEL) Input current (BIAS SELECT)

VI(SEL) = VDD

25

°

C

65

95

nA

VO = VDD/2,

25

°

C

10

17

14

23

IDD

Supply current

VO   VDD/2,

VIC = VDD/2,

N l

d

0

°

C

12

21

18

33

µ

A

No load

70

°

C

8

14

11

20

† Full range is 0

°

C to 70

°

C.

NOTES:

4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

6. At VDD = 5 V, VO = 0.25 V to 2 V; at VDD = 10 V, VO = 1 V to 6 V.

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

10

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

LOW-BIAS MODE

operating characteristics, V

DD

 = 5 V

PARAMETER

TEST CONDITIONS

TA

TLC251C, TLC251AC,

TLC251BC

UNIT

A

MIN

TYP

MAX

25

°

C

0.03

VI(PP) = 1 V

0

°

C

0.04

SR

Slew rate at unity gain

RL = 1 M

CL = 20 pF

(

)

70

°

C

0.03

V/

µ

s

SR

Slew rate at unity gain

RL = 1 M

,

CL = 20 pF

25

°

C

0.03

V/

µ

s

VI(PP) = 2.5 V

0

°

C

0.03

(

)

70

°

C

0.02

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 

25

°

C

68

nV/

Hz

25

°

C

5

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

RL = 1 M

0

°

C

6

kHz

70

°

C

4.5

25

°

C

85

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF

0

°

C

100

kHz

70

°

C

65

25

°

C

34

°

φ

m

Phase margin

VI = 10 mV,

f = B1,

CL = 20 pF

0

°

C

36

°

70

°

C

30

°

operating characteristics, V

DD

 = 10 V

PARAMETER

TEST CONDITIONS

TA

TLC251C, TLC251AC,

TLC251BC

UNIT

A

MIN

TYP

MAX

25

°

C

0.05

VI(PP) = 1 V

0

°

C

0.05

SR

Slew rate at unity gain

RL = 1 M

CL = 20 pF

(

)

70

°

C

0.04

V/

µ

s

SR

Slew rate at unity gain

RL = 1 M

,

CL = 20 pF

25

°

C

0.04

V/

µ

s

VI(PP) = 5.5 V

0

°

C

0.05

(

)

70

°

C

0.04

Vn

Equivalent input noise voltage

f = 1 kHz,

RS = 20 

25

°

C

68

nV/

Hz

25

°

C

1

BOM

Maximum output-swing bandwidth

VO = VOH,

CL = 20 pF,

RL = 1 M

0

°

C

1.3

kHz

70

°

C

0.9

25

°

C

110

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 20 pF

0

°

C

125

kHz

70

°

C

90

25

°

C

38

°

φ

m

Phase margin

VI = 10 mV,

f = B1,

CL = 20 pF

0

°

C

40

°

70

°

C

34

°

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

11

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

electrical characteristics at specified free-air temperature, V

DD

 = 1.4 V

PARAMETER

TEST CONDITIONS†

TA‡

BIAS

TLC251C, TLC251AC,

TLC251BC

UNIT

A

MIN

TYP

MAX

TLC251C

25

°

C

Any

10

TLC251C

Full range

Any

12

VIO

Input offset

TLC251AC

VO = 0 2 V

RS = 50

25

°

C

Any

5

mV

VIO

voltage

TLC251AC

VO = 0.2 V,

RS = 50 

Full range

Any

6.5

mV

TLC251BC

25

°

C

Any

2

TLC251BC

Full range

Any

3

α

VIO

Average temperature

coefficient of input offset

voltage

25

°

C to 70

°

C

Any

1

µ

V/

°

C

IIO

Input offset current

VO = 0 2 V

25

°

C

Any

1

pA

IIO

Input offset current

VO = 0.2 V

Full range

Any

300

pA

IIB

Input bias current

VO = 0 2 V

25

°

C

Any

1

pA

IIB

Input bias current

VO = 0.2 V

Full range

Any

600

pA

VICR

Common-mode input

voltage range

25

°

C

Any

to

0.2

V

VOM

Peak output voltage

swing§

VID = 100 mV

25

°

C

Any

450

700

mV

AVD

Large-signal differential

VO = 100 to 300 mV

RS = 50

25

°

C

Low

20

AVD

g

g

voltage amplification

VO = 100 to 300 mV, RS = 50 

25

°

C

High

10

CMRR

Common-mode rejection

ratio

RS = 50 

,

VIC = VICRmin

VO = 0.2 V,

25

°

C

Any

60

77

dB

IDD

Supply current

VO = 0 2 V

No load

25

°

C

Low

5

17

µ

A

IDD

Supply current

VO = 0.2 V,

No load

25

°

C

High

150

190

µ

A

† All characteristics are measured under open-loop conditions with zero common-mode input voltage unless otherwise specified. Unless otherwise

noted, an output load resistor is connected from the output to ground and has the following values: for low bias, RL = 1 M

, for medium bias,

RL = 100 k

, and for high bias, RL = 10 k

.

‡ Full range is 0

°

C to 70

°

C.

§ The output swings to the potential of VDD–/GND.

operating characteristics, V

DD

 = 1.4 V, T

A

 = 25

°

C

PARAMETER

TEST CONDITIONS

BIAS

TLC251C, TLC251AC,

TLC251BC

UNIT

MIN

TYP

MAX

B1

Unity gain bandwidth

CL = 100 pF

Low

12

kHz

B1

Unity-gain bandwidth

CL = 100 pF

High

12

kHz

SR

Slew rate at unity gain

See Figure 1

Low

0.001

V/

µ

s

SR

Slew rate at unity gain

See Figure 1

High

0.1

V/

µ

s

Overshoot factor

See Figure 1

Low

35%

Overshoot factor

See Figure 1

High

30%

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

12

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

electrical characteristics, V

DD

 = 5 V, T

A

 = 25

°

C

TLC251Y

PARAMETER

TEST CONDITIONS

HIGH-BIAS

MODE

MEDIUM-BIAS

MODE

LOW-BIAS

MODE

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

VIO

Input offset voltage

VO = 1.4 V,

VIC = 0 V,

RS = 50 

,

RL†

1.1

10

1.1

10

1.1

10

mV

α

VIO

Average temperature

coefficient of input

offset voltage

1.8

1.7

1.1

µ

V/

°

C

IIO

Input offset current

(see Note 4)

VO = VDD/2,

VIC = VDD/2

0.1

0.1

0.1

pA

IIB

Input bias current 

(see Note 4)

VO = VDD/2,

VIC = VDD/2

0.6

0.6

0.6

pA

VICR

Common-mode input

voltage range 

(see Note 5)

– 0.2

to 

4

– 0.3

to 

4.2

– 0.2

to 

4

– 0.3

to 

4.2

– 0.2

to 

4

– 0.3

to 

4.2

V

VOH

High-level output

voltage

VID = 100 mV,

RL†

3.2

3.8

3.2

3.9

3.2

4.1

V

VOL

Low-level output

voltage

VID = – 100 mV,

IOL = 0

0

50

0

50

0

50

mV

AVD

Large-signal

differential voltage

amplification

VO = 0.25 V,

RL†

5

23

25

170

50

480

V/mV

CMRR

Common-mode

rejection ratio

VIC = VICRmin

65

80

65

91

65

94

dB

kSVR

Supply-voltage

rejection ratio

(

VDD /

VIO)

VDD = 5 V to 10 V,

VO = 1.4 V

65

95

70

93

70

97

dB

II(SEL)

Input current 

(BIAS SELECT)

VI(SEL) = VDD/2

– 1.4

– 0.13

0.065

µ

A

IDD

Supply current

VO = VDD/2,

VIC = VDD/2,

No load

675

1600

105

280

10

17

µ

A

† For high-bias mode, RL = 10 k

; for medium-bias mode, RL = 100 k

; and for low-bias mode, RL = 1 M

.

NOTES:

4. The typical values of input bias current and input offset current below 5 pA were determined mathematically.

5. This range also applies to each input individually.

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

13

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

operating characteristics, V

DD

 = 5 V, T

A

 = 25

°

C

TLC251Y

PARAMETER

TEST CONDITIONS

HIGH-BIAS

MODE

MEDIUM-BIAS

MODE

LOW-BIAS

MODE

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

MIN

TYP

MAX

SR

Slew rate at

RL†,

VI(PP) = 1 V

3.6

0.43

0.03

V/

µ

s

SR

unity gain

L ,

CL = 20 pF

VI(PP) = 2.5 V

2.9

0.40

0.03

V/

µ

s

Vn

Equivalent input

noise voltage

f = 1 kHz,

RS = 20 

25

32

68

nV/

Hz

BOM

Maximum output

swing bandwidth

VO = VOH,

RL = 10 k

CL = 20 pF,

320

55

4.5

kHz

B1

Unity-gain

bandwidth

VI = 10 mV,

CL = 20 pF

1700

525

65

kHz

φ

m

Phase margin

f = B1,

CL = 20 pF

VI = 10 mV,

46

°

40

°

34

°

† For high-bias mode, RL = 10 k

; for medium-bias mode, RL = 100 k

; and for low-bias mode, RL = 1 M

.

PARAMETER MEASUREMENT INFORMATION

Figure 1. Unity-Gain Amplifier

+

Output

Input

CL = 100 pF

RL

BIAS

RL

Low

    1 M

Medium     100 k

High

    10 k

Figure 2. Input Offset Voltage Null Circuit

+

25 k

N1

N2

IN –

IN +

Output

GND

TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

IDD

Supply current

vs Bias-select voltage

vs Supply voltage

3

4

IDD

Supply current

vs Supply voltage

vs Free-air temperature

4

5

Low bias

vs Frequency

6

AVD

Large-signal differential voltage amplification

Medium bias

vs Frequency

7

High bias

vs Frequency

8

Low bias

vs Frequency

6

Phase shift

Medium bias

vs Frequency

7

High bias

vs Frequency

8

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

14

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 3

100

10

1

0.1

1

– Supply Current –

1000

SUPPLY CURRENT

vs

BIAS-SELECT VOLTAGE

10000

10

100

I DD

A

µ

VDD = 16 V

VDD = 4 V

VDD = 1.4 V

VB – Bias-Select Voltage – V

VO = VIC = 0.2 VDD

No Load

TA = 25

°

C

Figure 4

10

0

0

2

4

6

8

10

12

100

1000

SUPPLY CURRENT

vs

SUPPLY VOLTAGE

10000

14

16

18

20

– Supply Current –

I DD

A

µ

VDD – Supply Voltage – V

Medium-Bias Versions

Low-Bias Versions

VO = VIC = 0.2 VDD

No Load

TA = 25

°

C

High-Bias Versions

10

0

0

10

20

30

40

50

60

100

1000

10000

70

80

– Supply Current –

I DD

A

µ

TA – Free-Air Temperature – 

°

C

SUPPLY CURRENT

vs

FREE-AIR TEMPERATURE

VDD = 10 V 

VIC = 0 V

VO = 2 V

No Load

Medium-Bias Versions

Low-Bias Versions

High-Bias Versions

Figure 5

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

15

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

0.1

1

10

100

1 k

10 k

100 k

LOW-BIAS LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

AND PHASE SHIFT

vs

FREQUENCY

Frequency – Hz

107

106

105

104

103

102

101

1

0.1

Phase Shift

(right scale)

AVD (left scale)

VDD = 10 V 

RL = 1 M

TA = 25

°

C

Phase Shift

0

°

30

°

60

°

90

°

120

°

150

°

180

°

– Differential V

oltage 

Amplification

A

VD

Figure 6

1

10

100

1 k

10 k

100 k

1 M

MEDIUM-BIAS LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

AND PHASE SHIFT

vs

FREQUENCY

– Differential V

oltage 

Amplification

A

VD

Frequency – Hz

107

106

105

104

103

102

101

1

0.1

Phase Shift

(right scale)

AVD (left scale)

VDD = 10 V 

RL = 100 k

TA = 25

°

C

Phase Shift

0

°

30

°

60

°

90

°

120

°

150

°

180

°

Figure 7

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

16

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

10

100

1 k

10 k

100 k

1 M

10 M

– Differential V

oltage 

Amplification

A

VD

Phase Shift

HIGH-BIAS LARGE-SIGNAL

DIFFERENTIAL VOLTAGE AMPLIFICATION

AND PHASE SHIFT

vs

FREQUENCY

Frequency – Hz

107

106

105

104

103

102

101

1

0.1

Phase Shift (right scale)

AVD (left scale)

VDD = 10 V 

RL = 10 k

TA = 25

°

C

0

°

30

°

60

°

90

°

120

°

150

°

180

°

Figure 8

APPLICATION INFORMATION

latch-up avoidance

Junction-isolated CMOS circuits have an inherent parasitic PNPN structure that can function as an SCR. Under

certain conditions, this SCR may be triggered into a low-impedance state, resulting in excessive supply current.

To avoid such conditions, no voltage greater than 0.3 V beyond the supply rails should be applied to any pin.

In general, the operational amplifier supplies should be applied simultaneously with, or before, application of

any input signals.

background image

TLC251, TLC251A, TLC251B, TLC251Y

LinCMOS

 PROGRAMMABLE

LOW-POWER OPERATIONAL AMPLIFIERS

 

SLOS001E – JULY 1983 – REVISED AUGUST 1994

17

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

APPLICATION INFORMATION

using BIAS SELECT

The TLC251 has a terminal called BIAS SELECT that allows the selection of one of three I

DD

 conditions (10,

150, and 1000 

µ

A typical). This allows the user to trade-off power and ac performance. As shown in the typical

supply current (I

DD

) versus supply voltage (V

DD

) curves (Figure 4), the I

DD

 varies only slightly from 4 V to 16

V. Below 4 V, the I

DD

 varies more significantly. Note that the I

DD

 values in the medium- and low-bias modes at

V

DD

 = 1.4 V are typically 2 

µ

A, and in the high mode are typically 12 

µ

A. The following table shows the

recommended BIAS SELECT connections at V

DD

 = 10 V.

BIAS MODE

AC PERFORMANCE

BIAS SELECT

CONNECTION†

TYPICAL IDD‡

Low

Medium

High

Low

Medium

High

VDD

0.8 V to 9.2 V

Ground pin

10 

µ

A

150 

µ

A

1000 

µ

A

† Bias selection may also be controlled by external circuitry to conserve power, etc.

For information regarding BIAS SELECT, see Figure 3 in the typical

characteristics curves.

‡ For IDD characteristics at voltages other than 10 V, see Figure 4 in the typical

characteristics curves.

output stage considerations

The amplifier’s output stage consists of a source-follower-connected pullup transistor and an open-drain

pulldown transistor. The high-level output voltage (V

OH

) is virtually independent of the I

DD

 selection and

increases with higher values of V

DD

 and reduced output loading. The low-level output voltage (V

OL

) decreases

with reduced output current and higher input common-mode voltage. With no load, V

OL

 is essentially equal to

the potential of V

DD –

/GND.

input offset nulling

The TLC251C series offers external offset null control. Nulling may be achieved by adjusting a 25-k

potentiometer connected between the offset null terminals with the wiper connected to the device V

DD –

/GND

pin as shown in Figure 2. The amount of nulling range varies with the bias selection. At an I

DD

 setting of

1000 

µ

A (high bias), the nulling range allows the maximum offset specified to be trimmed to zero. In low or

medium bias or when the amplifier is used below 4 V, total nulling may not be possible for all units.

supply configurations

Even though the TLC251C series is characterized for single-supply operation, it can be used effectively in a

split-supply configuration when the input common-mode voltage (V

ICR

), output swing (V

OL

 and V

OH

), and

supply voltage limits are not exceeded.

circuit layout precautions

The user is cautioned that whenever extremely high circuit impedances are used, care must be exercised in

layout, construction, board cleanliness, and supply filtering to avoid hum and noise pickup, as well as excessive

dc leakages.

background image

IMPORTANT NOTICE

Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue

any product or service without notice, and advise customers to obtain the latest version of relevant information

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pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent

TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except those mandated by government requirements.

CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF

DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL

APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR

WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER

CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO

BE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operating

safeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent

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intellectual property right of TI covering or relating to any combination, machine, or process in which such

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party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

Copyright 

©

 1998, Texas Instruments Incorporated