background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

1

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

D

Direct Upgrades for the TL06x Low-Power

BiFETs

D

Low Power Consumption . . .

6.5 mW/Channel Typ

D

On-Chip Offset-Voltage Trimming for

Improved DC Performance

(1.5 mV, TL031A)

D

Higher Slew Rate and Bandwidth Without

Increased Power Consumption

D

Available in TSSOP for Small Form-Factor

Designs

description

The TL03x series of JFET-input operational amplifiers offer improved dc and ac characteristics over the TL06x

family of low-power BiFET operational amplifiers. On-chip zener trimming of offset voltage yields precision

grades as low as 1.5 mV (TL031A) for greater accuracy in dc-coupled applications. Texas Instruments improved

BiFET process and optimized designs also yield improved bandwidths and slew rates without increased power

consumption. The TL03x devices are pin-compatible with the TL06x and can be used to upgrade existing

circuits or for optimal performance in new designs.

BiFET operational amplifiers offer the inherently higher input impedance of the JFET-input transistors without

sacrificing the output drive associated with bipolar amplifiers. This higher input impedance makes the TL3x

amplifiers better suited for interfacing with high-impedance sensors or very low-level ac signals. These devices

also feature inherently better ac response than bipolar or CMOS devices having comparable power

consumption.

The TL03x family has been optimized for micropower operation, while improving on the performance of the

TL06x series. Designers requiring significantly faster ac response should consider the Excalibur TLE206x

family of low-power BiFET operational amplifiers.

Because BiFET operational amplifiers are designed for use with dual power supplies, care must be taken to

observe common-mode input-voltage limits and output swing when operating from a single supply. DC biasing

of the input signal is required and loads should be terminated to a virtual-ground node at midsupply. Texas

Instruments TLE2426 integrated virtual-ground generator is useful when operating BiFET amplifiers from single

supplies.

The TL03x devices are fully specified at 

±

15 V and 

±

5 V. For operation in low-voltage and/or single-supply

systems, Texas Instruments LinCMOS families of operational amplifiers (TLC-prefix) are recommended. When

moving from BiFET to CMOS amplifiers, particular attention should be paid to slew rate, bandwidth

requirements, and output loading.

The C-suffix devices are characterized for operation from 0

°

C to 70

°

C. The I-suffix devices are characterized

for operation from –40

°

C to 85

°

C. The M-suffix devices are characterized for operation over the full military

temperature range of –55

°

C to 125

°

C.

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

Copyright 

©

 1999, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

 

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

2

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

1

2

3

4

8

7

6

5

OFFSET N1

IN–

IN+

V

CC–

NC

V

CC+

OUT

OFFSET N2

3

2

1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NC

V

CC+

NC

OUT

NC

NC

IN–

NC

IN+

NC

NC

OFFSET

 N1

NC

NC

NC

NC

OFFSET

 N2

NC

NC

V

CC–

TL031x, TL031Ax

D, JG, OR P PACKAGE

(TOP VIEW)

1

2

3

4

8

7

6

5

1OUT

1IN–

1IN+

V

CC –

V

CC+

2OUT

2IN–

2IN+

3

2

1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

NC

2OUT

NC

2IN–

NC

NC

1IN–

NC

1IN+

NC

NC

1OUT

NC

NC

NC

NC

2IN+

NC

CC–

V

CC+

V

TL031M, TL031AM

FK PACKAGE

(TOP VIEW)

TL032M, TL032AM

FK PACKAGE

(TOP VIEW)

TL032x, TL032Ax

D, JG, OR P PACKAGE

(TOP VIEW)

3

2

1 20 19

9 10 11 12 13

4

5

6

7

8

18

17

16

15

14

4IN+

NC

V

CC–

NC

3IN+

1IN+

NC

V

CC+

NC

2IN+

1IN–

1OUT

NC

3IN–

2IN–

NC

3OUT

4OUT

4IN–

2OUT

1

2

3

5

6

7

14

13

12

11

10

9

8

1OUT

1IN–

1IN+

V

CC+

2IN+

2IN–

2OUT

4OUT

4IN–

4IN+

V

CC–

3IN+

3IN–

3OUT

TL034x, TL034Ax

D, J, N, OR PW PACKAGE

(TOP VIEW)

TL034M, TL034AM

FK PACKAGE

(TOP VIEW)

NC – No internal connection

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

3

POST OFFICE BOX 655303 

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AVAILABLE OPTIONS

PACKAGED DEVICES

CHIP

TA

VIOMAX

AT 25

°

C

SMALL

OUTLINE†

(D)

CHIP

CARRIER

(FK)

CERAMIC

DIP

(J)

CERAMIC

DIP

(JG)

PLASTIC

DIP

(N)

PLASTIC

DIP

(P)

TSSOP†

(PW)

CHIP

FORM‡

(Y)

0.8 mV

TL031ACD

TL032ACD

TL031ACP

TL032ACP

TL031Y

0

°

C to 70

°

C

1.5 mV

TL031CD

TL032CD

TL034ACD

TL034ACN

TL031CP

TL032CP

TL031Y

TL032Y

TL034Y

4 mV

TL034CD

TL034CN

TL034CPW

0.8 mV

TL031AID

TL032AID

TL031AIP

TL032AIP

–40

°

C to 85

°

C

1.5 mV

TL031ID

TL032ID

TL034AID

TL034AIN

TL031IP

TL032IP

4 mV

TL034ID

TL034IN

0.8 mV

TL031AMD

TL032AMD

TL031AMFK

TL032AMFK

TL031AMJG

TL032AMJG

TL031AMP

TL032AMP

–55

°

C to 125

°

C

1.5 mV

TL031MD

TL032MD

TL034AMD

TL031MFK

TL032MFK

TL034AMFK

TL034AMJ

TL031MJG

TL032MJG

TL034AMN

TL031MP

TL032MP

4 mV

TL034MD

TL034MFK

TL034MJ

TL034MN

† The D and PW packages are available taped and reeled and are indicated by adding an R suffix to device type (e.g., TL034CDR or TL034CPWR).

‡ Chip forms are tested at 25

°

C.

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TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

4

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

symbol (each amplifier)

+

OUT

IN–

IN+

equivalent schematic (each amplifier)

R2

OFFSET N2

OFFSET N1

IN–

IN+

Q2

Q3

Q5

VCC+

Q14

Q6

R4

Q8 Q10

R7

Q11

R6

Q12

R3

C1

Q9

Q7

Q4

R5

R1

Q1

JF1 JF2

Q13

Q16

R8

JF3

JF4

Q15

Q17

OUT

D1

VCC–

NOTE A: OFFSET N1 and OFFSET N2 are available only on the TL031.

(see Note A)

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TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

5

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TL031Y chip information

This chip, when properly assembled, has characteristics similar to the TL031C. Thermal compression or

ultrasonic bonding can be used on the doped-aluminum bonding pads. These chips can be mounted with

conductive epoxy or a gold-silicon preform.

Bonding-Pad Assignments

54

42

Chip Thickness: 15 MIls Typical

Bonding Pads: 4 

×

 4 Mils Minimum

TJ(max) = 150

°

C

Tolerances Are 

±

10%.

All Dimensions Are in Mils.

Pin (4) is Internally Connected

to Backside of the Chip.

+

OUT

 IN+

IN–

VCC+

(7)

(3)

(2)

(6)

(1)

(4)

(5)

VCC–

OFFSET N1

OFFSET N2

(1)

(2)

(3)

(4)

(6)

(7)

(8)

(5)

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

6

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL032Y chip information

This chip, when properly assembled, has characteristics similar to the TL032C. Thermal compression or

ultrasonic bonding can be used on the doped-aluminum bonding pads. These chips can be mounted with

conductive epoxy or a gold-silicon preform.

Bonding-Pad Assignments

Chip Thickness: 15 Mils Typical

Bonding Pads: 4 

×

 4 Mils Minimum

TJ(max) = 150

°

C

Tolerances Are 

±

10%.

All Dimensions Are in Mils.

Pin (4) is Internally Connected to Backside of Chip.

+

1OUT

1IN+

1IN–

VCC+

(8)

(6)

(3)

(2)

(5)

(1)

+

(7)

2IN+

2IN–

2OUT

(4)

VCC–

67

51

(6)

(5)

(4)

(3)

(2)

(1)

(8)

(7)

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

7

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL034Y chip information

This chip, when properly assembled, has characteristics similar to the TL034C. Thermal compression or

ultrasonic bonding can be used on the doped-aluminum bonding pads. These chips can be mounted with

conductive epoxy or a gold-silicon preform.

Bonding-Pad Assignments

+

1OUT

1IN+

1IN–

VCC+

(4)

(6)

(3)

(2)

(5)

(1)

+

(7)

2IN+

2IN–

2OUT

(11)

VCC–

+

3OUT

3IN+

3IN–

(13)

(10)

(9)

(12)

(8)

+

(14)

4OUT

4IN+

 4IN–

(5)

(6)

(7)

(8)

(9)

(10)

93

66

(1)

(2)

(3)

(4)

(5)

(6)

(7)

(8)

(9)

(10)

(11)

(12)

(13)

(14)

Chip Thickness: 15 Mils Typical

Bonding Pads: 4 

×

 4 Mils Minimum

TJ(max) = 150

°

C

Tolerances Are 

±

10%.

All Dimensions Are in Mils.

Pin (11) is Internally Connected

to Backside of the Chip.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

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8

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absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Supply voltage, V

CC+

 (see Note 1) 

 18 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Supply voltage, V

CC–

 (see Note 1) 

 –18 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Differential input voltage, V

ID

 (see Note 2) 

 

±

30 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Input voltage, V

I

 (any input) (see Notes 1 and 3) 

 

±

15 V

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Input current, I

I

 (each input) 

 

±

1 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Output current, I

O

 (each output) 

 

±

40 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Total current into V

CC+

  

 160 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Total current out of V

CC–

  

 160 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Duration of short-circuit current at (or below) 25

°

C (see Note 4) 

 Unlimited

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Continuous total power dissipation 

 See Dissipation Rating Table

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Storage temperature range,T

stg

  

–65

°

C to 150

°

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Case temperature for 60 seconds: FK package  

 260

°

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Lead temperature 1,6 mm (1 /16 inch) from case for 10 seconds: D, N, P, or PW package 

 260

°

C

. . . . . . . . . 

Lead temperature 1,6 mm (1 /16 inch) from case for 60 seconds: J or JG package 

 300

°

C

. . . . . . . . . . . . . . . 

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:

1. All voltage values, except differential voltages, are with respect to the midpoint between VCC+ and VCC–.

2. Differential voltages are at IN+ with respect to IN–.

3. The magnitude of the input voltage must never exceed the magnitude of the supply voltage or 15 V, whichever is less.

4. The output may be shorted to either supply. Temperature and/or supply voltages must be limited to ensure that the maximum

dissipation rating is not exceeded.

DISSIPATION RATING TABLE

PACKAGE

TA 

 25

°

C

POWER RATING

DERATING FACTOR

ABOVE TA = 25

°

C

TA = 70

°

C

POWER RATING

TA = 85

°

C

POWER RATING

TA = 125

°

C

POWER RATING

D

950 mW

7.6 mW/

°

C

608 mW

494 mW

190 mW

FK

1375 mW

11.0 mW/

°

C

880 mW

715 mW

275 mW

J

1375 mW

11.0 mW/

°

C

880 mW

715 mW

275 mW

JG

1050 mW

8.4 mW/

°

C

672 mW

546 mW

210 mW

N

1150 mW

9.2 mW/

°

C

736 mW

598 mW

230 mW

P

1100 mW

8.0 mW/

°

C

640 mW

520 mW

200 mW

PW

700 mW

5.6 mW/

°

C

448 mW

N/A

N/A

recommended operating conditions

C SUFFIX

I SUFFIX

M SUFFIX

UNIT

MIN

MAX

MIN

MAX

MIN

MAX

UNIT

Supply voltage, VCC

±

±

5

±

15

±

5

±

15

±

5

±

15

V

Common mode input voltage VIC

VCC

±

 = 

±

5 V

–1.5

4

–1.5

4

–1.5

4

V

Common-mode input voltage, VIC

VCC

±

 = 

±

15 V

–11.5

14

–11.5

14

–11.5

14

V

Operating free-air temperature, TA

0

70

–40

85

–55

125

°

C

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

9

POST OFFICE BOX 655303 

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TL031C and TL031AC electrical characteristics at specified free-air temperature

TL031C, TL031AC

PARAMETER

TEST CONDITIONS

TA

VCC

±

±

5 V

VCC

±

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

TL031C

25

°

C

0.54

3.5

0.5

1.5

VIO

Input offset voltage

TL031C

Full range†

4.5

2.5

mV

VIO

Input offset voltage

TL031AC

25

°

C

0.41

2.8

0.34

0.8

mV

V

0

TL031AC

Full range†

3.8

1.8

VO = 0,

VIC = 0

TL031C

25

°

C to

7 1

5 9

α

VIO

Temperature coefficient of

VIC = 0,

RS = 50 

TL031C

 70

°

C

7.1

5.9

µ

V/

°

C

α

VIO

input offset voltage

RS   50 

TL031AC

25

°

C to

7 1

5 9

25

µ

V/

°

C

TL031AC

 70

°

C

7.1

5.9

25

Input offset voltage

long-term drift‡

25

°

C

0.04

0.04

µ

V/mo

IIO

Input offset current

VO = 0, VIC = 0,

25

°

C

1

100

1

100

pA

IIO

Input offset current

O

,

IC

,

See Figure 5

70

°

C

9

200

12

200

pA

IIB

Input bias current

VO = 0, VIC = 0,

25

°

C

2

200

2

200

pA

IIB

Input bias current

O

,

IC

,

See Figure 5

70

°

C

50

400

80

400

pA

VICR

Common-mode input

25

°

C

–1.5

to

4

–3.4

to

5.4

–11.5

to

14

–13.4

to

15.4

V

VICR

voltage range

Full range†

–1.5

to

.4

–11.5

to

14

V

M

i

iti

k

25

°

C

3

4.3

13

14

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

0

°

C

3

4.2

13

14

V

out ut voltage swing

70

°

C

3

4.3

13

14

M

i

ti

k

25

°

C

–3

–4.2

–12.5

–13.9

VOM–

Maximum negative peak

output voltage swing

RL = 10 k

0

°

C

–3

–4.1

–12.5

–13.9

V

out ut voltage swing

70

°

C

–3

–4.2

–12.5

–14

L

i

l diff

ti l

25

°

C

4

12

5

14.3

AVD

Large-signal differential

voltage amplification§

RL = 10 k

0

°

C

3

11.1

4

13.5

V/mV

voltage am lification§

70

°

C

4

13.3

5

15.2

ri

Input resistance

25

°

C

1012

1012

ci

Input capacitance

25

°

C

5

4

pF

C

d

V

V

i

25

°

C

70

87

75

94

CMRR

Common-mode

rejection ratio

VIC = VICRmin,

VO = 0 RS = 50

0

°

C

70

87

75

94

dB

rejection ratio

VO = 0, RS = 50 

70

°

C

70

87

75

94

Supply-voltage 

25

°

C

75

96

75

96

kSVR

Su

ly voltage 

rejection ratio

( V

/ V

)

VO = 0, RS = 50 

0

°

C

75

96

75

96

dB

(

VCC

±

/

VIO)

70

°

C

75

96

75

96

† Full range is 0

°

C to 70

°

C.

‡ Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150

°

C extrapolated to 

TA = 25

°

C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

§ At VCC

±

 = 

±

5 V, VO = 

±

2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

10

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 DALLAS, TEXAS 75265

TL031C and TL031AC electrical characteristics at specified free-air temperature (continued)

TL031C, TL031AC

PARAMETER

TEST CONDITIONS

TA

VCC

±

±

5 V

VCC

±

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

25

°

C

1.9

2.5

6.5

8.4

PD

Total power dissipation

VO = 0,

No load

0

°

C

1.8

2.5

6.3

8.4

mW

70

°

C

1.9

2.5

6.3

8.4

25

°

C

192

250

217

280

ICC

Supply current

VO = 0,

No load

0

°

C

184

250

211

280

µ

A

70

°

C

189

250

210

280

TL031C and TL031AC operating characteristics at specified free-air temperature

TL031C, TL031AC

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

P

iti

l

t

t

25

°

C

2

1.5

2.9

SR+

Positive slew rate at

unity gain†

0

°

C

1.8

1

2.6

V/

µ

s

unity gain†

RL = 10 k

,

CL = 100 pF,

70

°

C

2.2

1.5

3.2

N

ti

l

t

t

L

,

See Figure 1

L

,

25

°

C

3.9

1.5

5.1

SR–

Negative slew rate at

unity gain†

0

°

C

3.7

1.5

5

V/

µ

s

unity gain†

70

°

C

4

1.5

5

VI(PP) = 

±

10 mV,

25

°

C

138

132

tr

Rise time

RL = 10 k

,

CL = 100 pF,

0

°

C

134

127

ns

See Figures 1 and 2

70

°

C

150

142

VI(PP) = 

±

10 mV,

25

°

C

138

132

tf

Fall time

RL = 10 k

,

CL = 100 pF,

0

°

C

134

127

ns

See Figure 1

70

°

C

150

142

VI(PP) = 

±

10 mV,

25

°

C

11%

5%

Overshoot factor

CL = 100 pF,

CL = 100 pF,

0

°

C

10%

4%

See Figures 1 and 2

70

°

C

12%

6%

TL031C

f = 10 Hz

25

°

C

61

61

V

Equivalent input

TL031C

RS = 20 

,

f = 1 kHz

25

°

C

41

41

nV/

Hz

Vn

q

noise voltage

TL031AC

S

,

See Figure 3

f = 10 Hz

25

°

C

61

61

nV/

Hz

TL031AC

f = 1 kHz

25

°

C

41

41

60

In

Equivalent input noise

current

f = 1 kHz

25

°

C

0.003

0.003

pA/

Hz

V

10

V

R

10 k

25

°

C

1

1.1

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

0

°

C

1

1.1

MHz

CL = 25  F,

See Figure 4

70

°

C

1

1

V

10 mV

R

10 k

25

°

C

61

°

65

°

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

0

°

C

61

°

65

°

CL = 25  F,

See Figure 4

70

°

C

60

°

64

°

† For VCC

±

±

5 V, VI(PP) = 

±

1 V; for VCC

±

 = 

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

11

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL031I and TL031AI electrical characteristics at specified free-air temperature

TL031I, TL031AI

PARAMETER

TEST CONDITIONS

TA

VCC

±

±

5 V

VCC

±

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

TL031I

25

°

C

0.54

3.5

0.5

1.5

VIO

Input offset voltage

TL031I

Full range†

5.3

3.3

mV

VIO

Input offset voltage

TL031AI

25

°

C

0.41

2.8

0.34

0.8

mV

V

0

TL031AI

Full range†

4.6

2.6

VO = 0,

VIC = 0

TL031I

25

°

C to

6 5

6 2

α

VIO

Temperature coefficient of

VIC = 0,

RS = 50 

TL031I

85

°

C

6.5

6.2

µ

V/

°

C

α

VIO

input offset voltage

RS = 50 

TL031AI

25

°

C to

6 5

6 2

25

µ

V/

°

C

TL031AI

85

°

C

6.5

6.2

25

Input offset voltage

25

°

C

0 04

0 04

µ

V/mo

g

long-term drift‡

25

°

C

0.04

0.04

µ

V/mo

IIO

Input offset current

VO = 0,

VIC = 0,

25

°

C

1

100

1

100

pA

IIO

Input offset current

See Figure 5

85

°

C

0.02

0.45

0.02

0.45

nA

IIB

Input bias current

VO = 0,

VIC = 0,

25

°

C

2

200

2

200

pA

IIB

Input bias current

See Figure 5

85

°

C

0.2

0.9

0.2

0.9

nA

VICR

Common-mode input

25

°

C

–1.5

to

4

–3.4

to

5.4

–11.5

to

14

–13.4

to

15.4

V

VICR

voltage range

Full range†

–1.5

to

4

–11.5

to

14

V

M

i

iti

k

25

°

C

3

4.3

13

14

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

–40

°

C

3

4.1

13

14

V

out ut voltage swing

85

°

C

3

4.4

13

14

M

i

ti

k

25

°

C

–3

–4.2

–12.5

–13.9

VOM–

Maximum negative peak

output voltage swing

RL = 10 k

–40

°

C

–3

–4.1

–12.5

–13.8

V

out ut voltage swing

85

°

C

–3

–4.2

–12.5

–14

L

i

l diff

ti l

25

°

C

4

12

5

14.3

AVD

Large-signal differential

voltage amplification§

RL = 10 k

–40

°

C

3

8.4

4

11.6

V/mV

voltage am lification§

85

°

C

4

13.5

5

15.3

ri

Input resistance

25

°

C

1012

1012

ci

Input capacitance

25

°

C

5

4

pF

C

d

VIC VICRmin

25

°

C

70

87

75

94

CMRR

Common-mode

rejection ratio

VIC = VICRmin,

–40

°

C

70

87

75

94

dB

rejection ratio

VO = 0,

RS = 50 

85

°

C

70

87

75

94

Supply-voltage

25

°

C

75

96

75

96

kSVR

Su

ly voltage

rejection ratio

VO = 0,

RS = 50 

–40

°

C

75

96

75

96

dB

(

VCC

±

/

VIO)

85

°

C

75

96

75

96

† Full range is –40

°

C to 85

°

C.

‡ Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150

°

C extrapolated to 

TA = 25

°

C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

§ At VCC

±

 = 

±

5 V, VO = 

±

2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

12

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL031I and TL031AI electrical characteristics at specified free-air temperature (continued)

TL031I, TL031AI

PARAMETER

TEST CONDITIONS

TA

VCC

±

±

5 V

VCC

±

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

25

°

C

1.9

2.5

6.5

8.4

PD

Total power dissipation

VO = 0,

No load

–40

°

C

1.4

2.5

5.4

8.4

mW

85

°

C

1.9

2.5

6.2

8.4

25

°

C

192

250

217

280

ICC

Supply current

VO = 0,

No load

–40

°

C

144

250

181

280

µ

A

85

°

C

189

250

207

280

TL031I and TL031AI operating characteristics at specified free-air temperature

TL031I, TL031AI

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

P

iti

l

t

t

25

°

C

2

1.5

2.9

SR+

Positive slew rate at

unity gain†

–40

°

C

1.6

1

2.1

V/

µ

s

unity gain†

RL = 10 k

CL = 100 pF,

85

°

C

2.3

1.5

3.3

N

ti

l

t

t

it

L

See Figure 1

L

,

25

°

C

3.9

1.5

5.1

SR–

Negative slew rate at unity

gain†

–40

°

C

3.3

1.5

4.8

V/

µ

s

gain†

85

°

C

4.1

1.5

4.9

VI(PP) = 

±

10 mV,

25

°

C

138

132

tr

Rise time

RL = 10 k

,

CL = 100 pF,

–40

°

C

132

123

ns

See Figures 1 and 2

85

°

C

154

146

VI(PP) = 

±

10 mV,

25

°

C

138

132

tf

Fall time

RL = 10 k

,

CL = 100 pF,

–40

°

C

132

123

ns

See Figure 1

85

°

C

154

146

VI(PP) = 

±

10 mV,

25

°

C

11%

5%

Overshoot factor

RL = 10 k

,

CL = 100 pF,

–40

°

C

12%

5%

See Figures 1 and 2

85

°

C

13%

7%

TL031I

f = 10 Hz

25

°

C

61

61

V

Equivalent 

input

TL031I

RS = 20 

,

f = 1 kHz

25

°

C

41

41

nV/

Hz

Vn

input

noise voltage

TL031AI

S

,

See Figure 3

f = 10 Hz

25

°

C

61

61

nV/

Hz

noise voltage

TL031AI

f = 1 kHz

25

°

C

41

41

60

I

Equivalent input noise

f = 1 kHz

25

°

C

0 003

0 003

pA/

Hz

In

q

current

f = 1 kHz

25

°

C

0.003

0.003

pA/

Hz

V

10

V

R

10 k

25

°

C

1

1.1

B1

Unity-gain bandwidth

VI = 10 mV

CL = 25 pF

RL = 10 k

,

See Figure 4

–40

°

C

1

1.1

MHz

CL = 25  F,

See Figure 4

85

°

C

0.9

1

V

10 mV

R

10 k

25

°

C

61

°

65

°

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

–40

°

C

60

°

65

°

CL = 25  F

See Figure 4

85

°

C

60

°

64

°

† For VCC

±

±

5 V, VI(PP) = 

±

1 V; for VCC

±

 = 

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

13

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL031M and TL031AM electrical characteristics at specified free-air temperature

TL031M, TL031AM

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

TL031M

25

°

C

0.54

3.5

0.5

1.5

VIO

Input offset voltage

TL031M

Full range†

6.5

4.5

mV

VIO

Input offset voltage

TL031AM

25

°

C

0.41

2.8

0.34

0.8

mV

VO = 0

TL031AM

Full range†

5.8

3.8

α

VIO

Temperature coefficient of

VO = 0,

VIC = 0,

RS = 50 

TL031M

25

°

C to

125

°

C

5.1

4.3

µ

V/

°

C

α

VIO

input offset voltage

RS   50 

TL031AM

25

°

C to

125

°

C

5.1

4.3

µ

V/

°

C

Input offset voltage

long-term drift‡

25

°

C

0.04

0.04

µ

V/mo

IIO

Input offset current

VO = 0,

VIC = 0,

25

°

C

1

100

1

100

pA

IIO

Input offset current

See Figure 5

125

°

C

0.2

10

0.2

10

nA

IIB

Input bias current

VO = 0,

VIC = 0,

25

°

C

2

200

2

200

pA

IIB

Input bias current

See Figure 5

125

°

C

7

20

8

20

nA

VICR

Common-mode input

25

°

C

–1.5

to

4

–3.4

to

5.4

–11.5

to

14

–13.4

to

15.4

V

VICR

voltage range

Full range†

–1.5

to

4

–11.5

to

14

V

M

i

iti

k

25

°

C

3

4.3

13

14

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

–55

°

C

3

4.1

13

14

V

out ut voltage swing

125

°

C

3

4.4

13

14

M

i

ti

k

25

°

C

–3

–4.2

–12.5

–13.9

VOM–

Maximum negative peak

output voltage swing

RL = 10 k

–55

°

C

–3

–4

–12.5

–13.8

V

out ut voltage swing

125

°

C

–3

–4.3

–12.5

–14

L

i

l diff

ti l

25

°

C

4

12

5

14.3

AVD

Large-signal differential

voltage amplification§

RL = 10 k

–55

°

C

3

7.1

4

10.4

V/mV

voltage am lification§

125

°

C

3

12.9

4

15

ri

Input resistance

25

°

C

1012

1012

ci

Input capacitance

25

°

C

5

4

pF

CMR

C

d

V

V

i

25

°

C

70

87

75

94

CMR

R

Common-mode

rejection ratio

VIC = VICRmin,

VO = 0 RS = 50

–55

°

C

70

87

70

94

dB

R

rejection ratio

VO = 0, RS = 50 

125

°

C

70

87

70

94

Supply-voltage

25

°

C

75

96

75

96

kSVR

Su

ly voltage 

rejection ratio

VO = 0,

RS = 50 

–55

°

C

75

96

75

95

dB

(

VCC

±

/

VIO)

125

°

C

75

96

75

96

25

°

C

1.9

2.5

6.5

8.4

PD

Total power dissipation

VO = 0,

No load

–55

°

C

1.1

2.5

4.7

8.4

mW

125

°

C

1.8

2.5

5.8

8.4

† Full range is –55

°

C to 125

°

C.

‡ Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150

°

C extrapolated to

TA = 25

°

C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

§ At VCC

±

 = 

±

5 V, VO = 

±

2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

14

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL031M and TL031AM electrical characteristics at specified free-air temperature (continued)

TL031M, TL031AM

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

25

°

C

192

250

217

280

ICC

Supply current

VO = 0,

No load

–55

°

C

114

250

156

280

µ

A

125

°

C

178

250

197

280

TL031M and TL031AM operating characteristics at specified free-air temperature

TL031M, TL031AM

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

P

iti

l

t

t

25

°

C

2

1.5

2.9

SR+

Positive slew rate at

unity gain†

–55

°

C

1.4

1

1.9

V/

µ

s

unity gain†

RL = 10 k

,

CL = 100 pF,

125

°

C

2.4

1

3.5

N

ti

l

t

t

L

,

See Figure 1

L

,

25

°

C

3.9

1.5

5.1

SR–

Negative slew rate at

unity gain†

–55

°

C

3.2

1

4.6

V/

µ

s

unity gain†

125

°

C

4.1

1

4.7

VI(PP) = 

±

10 mV,

25

°

C

138

132

tr

Rise time

RL = 10 k

Ω,

CL = 100 pF,

–55

°

C

142

123

ns

See Figures 1 and 2

125

°

C

166

158

VI(PP) = 

±

10 mV,

25

°

C

138

132

tf

Fall time

RL = 10 k

Ω,

CL = 100 pF,

–55

°

C

142

123

ns

See Figure 1

125

°

C

166

158

VI(PP) = 

±

10 mV,

25

°

C

11%

5%

Overshoot factor

RL = 10 k

Ω,

CL = 100 pF,

–55

°

C

16%

6%

See Figures 1 and 2

125

°

C

14%

8%

TL031M

f = 10 Hz

25

°

C

61

61

V

Equivalent input

TL031M

RS = 20 

,

f = 1 kHz

25

°

C

41

41

nV/

Hz

Vn

q

noise voltage

TL031AM

S

,

See Figure 3

f = 10 Hz

25

°

C

61

61

nV/

Hz

TL031AM

f = 1 kHz

25

°

C

41

41

I

Equivalent input noise

f = 1 kHz

25

°

C

0 003

0 003

pA/

Hz

In

q

current

f = 1 kHz

25

°

C

0.003

0.003

pA/

Hz

V

10

V

R

10 k

25

°

C

1

1.1

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

–55

°

C

1

1.1

MHz

CL = 25  F,

See Figure 4

125

°

C

0.9

0.9

V

10

V

R

10 k

25

°

C

61

°

65

°

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

–55

°

C

57

°

64

°

CL = 25  F,

See Figure 4

125

°

C

59

°

62

°

† For VCC

±

 = 

±

5 V, VI(PP) = 

±

1 V; for VCC

±

 = 

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

15

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL031Y electrical characteristics, T

A

 = 25

°

C

TL031Y

PARAMETER

TEST CONDITIONS

VCC

±

±

5 V

VCC

±

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

VIO

Input offset voltage

VO = 0

VIC = 0

0.54

0.5

mV

α

VIO

Temperature coefficient of

VO = 0,

RS = 50

VIC = 0,

7 1

5 9

µ

V/

°

C

α

VIO

input offset voltage

RS = 50 

7.1

5.9

µ

V/

°

C

IIO

Input offset current

VO = 0,

VIC = 0,

1

1

pA

IIB

Input bias current

O

,

See Figure 5

IC

,

2

2

pA

VICR

Common-mode input voltage

range

–3.4

to

5.4

–13.4

to

15.4

V

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

4.3

14

V

VOM–

Maximum negative peak

output voltage swing

RL = 10 k

–4.2

–13.9

V

AVD

Large-signal differential

voltage amplification†

RL = 10 k

12

14.3

V/mV

ri

Input resistance

1012

1012

ci

Input capacitance

5

4

pF

CMRR

Common-mode rejection ratio

VIC = VICRmin, 

RS = 50 

VO = 0,

87

94

dB

kSVR

Supply-voltage rejection ratio

(

VCC

±

/

VIO)

VO = 0,

RS = 50 

96

96

dB

PD

Total power dissipation

VO = 0

No load

1.9

6.5

mW

ICC

Supply current

VO = 0,

No load

192

217

µ

A

† At VCC

±

 = 

±

5 V, VO = 

±

2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

TL031Y operating characteristics, T

A

 = 25

°

C

TL031Y

PARAMETER

TEST CONDITIONS

VCC

±

±

5 V

VCC

±

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

SR+

Positive slew rate at unity gain‡

RL = 10 k

,

CL 100 pF

RL = 10 k

,

CL 100 pF

2

2.9

V/

µ

s

SR–

Negative slew rate at unity gain‡

CL = 100 pF,

See Figure 1

CL = 100 pF,

See Figure 1

3.9

5.1

V/

µ

s

tr

Rise time

VI(PP) = 

±

10 mV,

138

132

ns

tf

Fall time

RL = 10 k

,

CL = 100 pF,

138

132

ns

Overshoot factor

See Figures 1 and 2

11%

5%

V

Eq i alent inp t noise oltage

RS = 20 

,

f = 10 Hz

61

61

nV/

Hz

Vn

Equivalent input noise voltage

S

,

See Figure 3

f = 1 kHz

41

41

nV/

Hz

In

Equivalent input noise current

f = 1 kHz

0.003

0.003

pA/

Hz

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

1

1.1

MHz

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

61

°

65

°

‡ For VCC

±

±

5 V, VI(PP) = 

±

1 V; for VCC

±

 = 

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

16

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL032C and TL032AC electrical characteristics at specified free-air temperature

TL032C, TL032AC

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

TL032C

25

°

C

0.69

3.5

0.57

1.5

VIO

Input offset voltage

TL032C

Full range†

4.5

2.5

mV

VIO

Input offset voltage

TL032AC

25

°

C

0.53

2.8

0.39

0.8

mV

VO = 0

TL032AC

Full range†

3.8

1.8

α

VIO

Temperature coefficient

VO = 0,

VIC = 0,

RS = 50 

TL032C

25

°

C to

70

°

C

11.5

10.8

µ

V/

°

C

α

VIO

of input offset voltage

RS   50 

TL032AC

25

°

C to

70

°

C

11.5

10.8

25

µ

V/

°

C

Input offset voltage

long-term drift‡

25

°

C

0.04

0.04

µ

V/mo

IIO

Input offset current

VO = 0,

VIC = 0,

25

°

C

1

100

1

100

pA

IIO

Input offset current

O

,

See Figure 5

IC

,

70

°

C

9

200

12

200

pA

IIB

Input bias current

VO = 0,

VIC = 0,

25

°

C

2

200

2

200

pA

IIB

Input bias current

O

,

See Figure 5

IC

,

70

°

C

50

400

80

400

pA

VICR

Common-mode input

25

°

C

–1.5

to

4

–3.4

to

5.4

–11.5

to

14

–13.4

to

15.4

V

VICR

voltage range

Full range†

–1.5

to

4

–11.5

to

14

V

M

i

iti

k

25

°

C

3

4.3

13

14

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

0

°

C

3

4.2

13

14

V

out ut voltage swing

70

°

C

3

4.3

13

14

Maximum negative

25

°

C

–3

–4.2

–12.5

–13.9

VOM–

Maximum negative

peak output voltage

RL = 10 k

0

°

C

–3

–4.1

–12.5

–13.9

V

swing

70

°

C

–3

–4.2

–12.5

–14

L

i

l diff

ti l

25

°

C

4

12

5

14.3

AVD

Large-signal differential

voltage amplification§

RL = 10 k

0

°

C

3

11.1

4

13.5

V/mV

voltage am lification§

70

°

C

4

13.3

5

15.2

ri

Input resistance

25

°

C

1012

1012

ci

Input capacitance

25

°

C

5

14

pF

C

d

V

V

i

25

°

C

70

87

75

94

CMRR

Common-mode

rejection ratio

VIC = VICRmin,

VO = 0 RS = 50

0

°

C

70

87

75

94

dB

rejection ratio

VO = 0, RS = 50 

70

°

C

70

87

75

94

Supply-voltage

V

±

5 V to

±

15 V

25

°

C

75

96

75

96

kSVR

Su

ly voltage

rejection ratio

( V

/ V

)

VCC

±

 = 

±

5 V to 

±

15 V,

VO = 0, RS = 50

0

°

C

75

96

75

96

dB

(

VCC

±

/

VIO)

VO = 0, RS = 50 

70

°

C

75

96

75

96

† Full range is 0

°

C to 70

°

C.

‡ Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150

°

C extrapolated to

TA = 25

°

C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

§ At VCC

±

 = 

±

5 V, VO = 2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

17

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL032C and TL032AC electrical characteristics at specified free-air temperature (continued)

TL032C, TL032AC

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

T t l

di

i

ti

25

°

C

3.8

5

13

17

PD

Total power dissipation

(two amplifiers)

VO = 0,

No load

0

°

C

3.7

5

12.7

17

mW

(two am lifiers)

70

°

C

3.8

5

12.6

17

ICC

Supply current

VO = 0

No load

0

°

C

368

500

422

560

µ

A

ICC

y

(two amplifiers)

VO = 0,

No load

70

°

C

378

500

420

560

µ

A

VO1/VO2

Crosstalk attenuation

AVD = 100 dB

25

°

C

120

120

dB

TL032C and TL032AC operating characteristics at specified free-air temperature

TL032C, TL032AC

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

P

iti

l

t

t

it

25

°

C

12

1.5

2.9

SR+

Positive slew rate at unity

gain†

0

°

C

1.8

1

2.6

V/

µ

s

gain†

RL = 10 k

, CL = 100 pF,

70

°

C

2.2

1.5

3.2

N

ti

l

t

t

it

L

,

L

,

See Figure 1

25

°

C

3.9

1.5

5.1

SR–

Negative slew rate at unity

gain†

0

°

C

3.7

1.5

5

V/

µ

s

gain†

70

°

C

4

1.5

5

25

°

C

138

132

tr

Rise time

0

°

C

134

127

ns

70

°

C

150

142

VI(PP) =

±

10 V,

25

°

C

138

132

tf

Fall time

VI(PP) = 

±

10 V,

RL = 10 k

, CL = 100 pF,

0

°

C

134

127

ns

See Figures 1 and 2

70

°

C

150

142

25

°

C

11%

5%

Overshoot factor

0

°

C

10%

4%

70

°

C

12%

6%

TL032C

f = 10 Hz

25

°

C

49

49

V

Equivalent input

TL032C

RS = 20 

,

f = 1 kHz

25

°

C

41

41

nV/

Hz

Vn

q

noise voltage

TL032AC

S

,

See Figure 3

f = 10 Hz

25

°

C

49

49

nV/

Hz

TL032AC

f = 1 kHz

25

°

C

41

41

60

In

Equivalent input noise current

f = 1 kHz

25

°

C

0.003

0.003

pA/

Hz

V

10

V

R

10 k

25

°

C

1

1.1

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

0

°

C

1

1.1

MHz

CL = 25  F,

See Figure 4

70

°

C

1

1

V

10 mV

R

10 k

25

°

C

61

°

65

°

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

0

°

C

61

°

65

°

CL = 25  F,

See Figure 4

70

°

C

60

°

64

°

† For VCC

±

 = 

±

5 V, VI(PP) = 

±

1 V; for VCC

±

 = 

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

18

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL032I and TL032AI electrical characteristics at specified free-air temperature

TL032I, TL032AI

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

TL032I

25

°

C

0.69

3.5

0.57

1.5

VIO

Input offset voltage

TL032I

Full range†

5.3

3.3

mV

VIO

Input offset voltage

TL032AI

25

°

C

0.53

2.8

0.39

0.8

mV

VO = 0

TL032AI

Full range†

4.6

2.6

α

VIO

Temperature coefficient

VO = 0,

VIC = 0,

RS = 50 

TL032I

25

°

C to

85

°

C

11.4

10.8

µ

V/

°

C

α

VIO

of input offset voltage

RS   50 

TL032AI

25

°

C to

85

°

C

11.4

10.8

25

µ

V/

°

C

Input offset voltage

long-term drift‡

25

°

C

0.04

0.04

µ

V/mo

IIO

Input offset current

VO = 0,

VIC = 0,

25

°

C

1

100

1

100

pA

IIO

Input offset current

O

,

See Figure 5

IC

,

85

°

C

0.02

0.45

0.02

0.45

nA

IIB

Input bias current

VO = 0,

VIC = 0,

25

°

C

2

200

2

200

pA

IIB

Input bias current

O

,

See Figure 5

IC

,

85

°

C

0.2

0.9

0.3

0.9

nA

VICR

Common-mode input

25

°

C

–1.5

to

4

–3.4

to

5.4

–11.5

to

14

–13.4

to

15.4

V

VICR

voltage range

Full range†

–1.5

to

4

–11.5

to

14

V

M

i

iti

k

25

°

C

3

4.3

13

14

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

–40

°

C

3

4.2

13

14

V

out ut voltage swing

85

°

C

3

4.4

13

14

Maximum negative

25

°

C

–3

–4.2

–12.5

–13.9

VOM–

Maximum negative

peak output voltage

RL = 10 k

–40

°

C

–3

–4.1

–12.5

–13.8

V

swing

85

°

C

–3

–4.2

–12.5

–14

AVD

Large-signal differential

RL = 10 k

–40

°

C

3

8.4

4

11.6

V/mV

AVD

g

g

voltage amplification§

RL = 10 k

85

°

C

4

13.5

5

15.3

V/mV

ri

Input resistance

25

°

C

1012

1012

ci

Input capacitance

25

°

C

5

4

pF

C

d

V

V

i

25

°

C

70

87

75

94

CMRR

Common-mode

rejection ratio

VIC = VICRmin,

VO = 0 RS = 50

–40

°

C

70

87

75

94

dB

rejection ratio

VO = 0, RS = 50 

85

°

C

70

87

75

94

Supply-voltage 

VCC

±

=

±

5 V to

±

15 V

25

°

C

75

96

75

96

kSVR

Su

ly voltage 

rejection ratio

( V

/ V

)

VCC

±

 = 

±

5 V to 

±

15 V,

–40

°

C

75

96

75

96

dB

(

VCC

±

/

VIO)

VO = 0,

RS = 50 

85

°

C

75

96

75

96

† Full range is –40

°

C to 85

°

C.

‡ Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150

°

C extrapolated to 

TA = 25

°

C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

§ At VCC

±

 = 

±

5 V, VO = 2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

19

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL032I and TL032AI electrical characteristics at specified free-air temperature (continued)

TL032I, TL032AI

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

T t l

di

i

ti

25

°

C

3.8

5

13

17

PD

Total power dissipation 

(two amplifiers)

VO = 0,

No load

–40

°

C

2.9

5

10.9

17

mW

(two am lifiers)

85

°

C

3.7

5

12.4

17

S

l

t

25

°

C

384

500

434

560

ICC

Supply current 

(two amplifiers)

VO = 0,

No load

–40

°

C

288

500

362

560

µ

A

(two am lifiers)

85

°

C

372

500

414

560

VO1/VO2

Crosstalk attenuation

AVD = 100 dB

25

°

C

120

120

dB

TL032I and TL032AI operating characteristics at specified free-air temperature

TL032I, TL032AI

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

P

iti

l

t

t

it

25

°

C

2

1.5

2.9

SR+

Positive slew rate at unity

gain†

–40

°

C

1.6

1

2.1

V/

µ

s

gain†

RL = 10 k

CL = 100 pF

85

°

C

2.3

1.5

3.3

N

ti

l

t

t

it

RL = 10 k

, CL = 100 pF

25

°

C

3.9

1.5

5.1

SR–

Negative slew rate at unity

gain†

–40

°

C

3.3

1.5

4.8

V/

µ

s

gain†

85

°

C

4.1

1.5

4.9

VI(PP) =

±

10 V,

25

°

C

138

132

tr

Rise time

VI(PP) = 

±

10 V,

RL = 10 k

, CL = 100 pF,

–40

°

C

132

123

ns

See Figures 1 and 2

85

°

C

154

146

VI(PP) =

±

10 V,

25

°

C

138

132

tf

Fall time

VI(PP) = 

±

10 V,

RL = 10 k

, CL = 100 pF,

–40

°

C

132

123

ns

See Figure 1

85

°

C

154

146

VI(PP) =

±

10 V,

25

°

C

11%

5%

Overshoot factor

VI(PP) = 

±

10 V,

RL = 10 k

, CL = 100 pF,

–40

°

C

12%

5%

See Figures 1 and 2

85

°

C

13%

7%

TL032I

f = 10 Hz

25

°

C

49

49

V

Equivalent input

TL032I

RS = 20 

,

f = 1 kHz

25

°

C

41

41

nV/

Hz

Vn

q

noise voltage

TL032AI

S

,

See Figure 3

f = 10 Hz

25

°

C

49

49

nV/

Hz

TL032AI

f = 1 kHz

25

°

C

41

41

60

In

Equivalent input noise 

current

f = 1 kHz

25

°

C

0.003

0.003

pA/

Hz

V

10

V

R

10 k

25

°

C

1

1.1

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

–40

°

C

1

1.1

MHz

CL = 25  F,

See Figure 4

85

°

C

0.9

1

V

10 mV

R

10 k

25

°

C

61

°

65

°

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

–40

°

C

61

°

65

°

CL = 25  F,

See Figure 4

85

°

C

60

°

64

°

† For VCC

±

 = 

±

5 V, VI(PP) = 

±

1 V; for VCC

±

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

20

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL032M and TL032AM electrical characteristics at specified free-air temperature

TL032M, TL032AM

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

TL032M

25

°

C

0.69

3.5

0.57

1.5

VIO

Input offset voltage

TL032M

Full range†

6.5

4.5

mV

VIO

Input offset voltage

TL032AM

25

°

C

0.53

2.8

0.39

0.8

mV

VO = 0

TL032AM

Full range†

5.8

3.8

α

VIO

Temperature coefficient

VO = 0,

VIC = 0,

RS = 50 

TL032M

25

°

C to

125

°

C

9.7

9.7

µ

V/

°

C

α

VIO

of input offset voltage

RS   50 

TL032AM

25

°

C to

125

°

C

9.7

9.7

µ

V/

°

C

Input offset voltage 

long-term drift‡

 25

°

C

0.04

0.04

µ

V/mo

IIO

Input offset current

VO = 0,

VIC = 0,

 25

°

C

1

100

1

100

pA

IIO

Input offset current

O

,

See Figure 5

IC

,

125

°

C

0.2

10

0.2

10

nA

IIB

Input bias current

VO = 0,

VIC = 0,

 25

°

C

2

200

2

200

pA

IIB

Input bias current

O

,

See Figure 5

IC

,

125

°

C

7

20

8

20

nA

VICR

Common-mode input

25

°

C

–1.5

to

4

–3.4

to

5.4

–11.5

to

14

–13.4

to

15.4

V

VICR

voltage range

Full range†

–1.5

to

4

–11.5

to

14

V

M

i

iti

k

 25

°

C

3

4.3

13

14

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

–55

°

C

3

4.1

13

14

V

out ut voltage swing

125

°

C

3

4.4

13

14

M

i

ti

k

 25

°

C

–3

–4.2

–12.5

–13.9

VOM–

Maximum negative peak

output voltage swing

RL = 10 k

–55

°

C

–3

–4

–12.5

–13.8

V

out ut voltage swing

125

°

C

–3

–4.3

–12.5

–14

L

i

l diff

ti l

 25

°

C

4

12

5

14.3

AVD

Large-signal differential

voltage amplification§

RL = 10 k

–55

°

C

3

7.1

4

10.4

V/mV

voltage am lification§

125

°

C

3

12.9

4

15

ri

Input resistance

 25

°

C

1012

1012

ci

Input capacitance

 25

°

C

5

4

pF

C

d

j

ti

V

V

i

 25

°

C

70

87

75

94

CMRR

Common-mode rejection

ratio

VIC = VICRmin,

VO = 0 RS = 50

–55

°

C

70

87

70

94

dB

ratio

VO = 0, RS = 50 

 125

°

C

70

87

70

94

Supply-voltage 

V

±

5 V to

±

15 V

 25

°

C

75

96

75

96

kSVR

Su

ly voltage 

rejection ratio

( V

/ V

)

VCC

±

 = 

±

5 V to 

±

15 V,

VO = 0, RS = 50

–55

°

C

75

95

75

95

dB

(

VCC

±

/

VIO)

VO = 0, RS = 50 

125

°

C

75

96

75

96

† Full range is –55

°

C to 125

°

C.

‡ Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150

°

C extrapolated to

TA = 25

°

C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

§ At VCC

±

 = 

±

5 V, VO = 2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

21

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL032M and TL032AM electrical characteristics at specified free-air temperature (continued)

TL032M, TL032AM

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

T t l

di

i

ti

25

°

C

3.8

5

13

17

PD

Total power dissipation

(two amplifiers)

VO = 0,

No load

–55

°

C

2.3

5

9.4

17

mW

(two am lifiers)

125

°

C

3.6

5

11.8

17

S

l

t

25

°

C

384

500

434

560

ICC

Supply current 

(two amplifiers)

VO = 0,

No load

–55

°

C

228

500

312

560

µ

A

(two am lifiers)

125

°

C

356

500

394

560

VO1/VO2

Crosstalk attenuation

AVD = 100 dB

 25

°

C

120

120

dB

TL032M and TL032AM operating characteristics at specified free-air temperature

TL032M, TL032AM

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

P

iti

l

t

t

it

25

°

C

2

1.5

2.9

SR+

Positive slew rate at unity

gain†

–55

°

C

1.4

1

1.9

V/

µ

s

gain†

RL = 10 k

,

CL 100 pF

125

°

C

2.4

1

3.5

N

ti

l

t

t

it

CL = 100 pF,

See and Figure 1

25

°

C

3.9

1.5

5.1

SR–

Negative slew rate at unity

gain†

See and Figure 1

–55

°

C

3.2

1

4.6

V/

µ

s

gain†

125

°

C

4.1

1

4.7

VI(PP) = 

±

10 V,

R

10 k

25

°

C

138

132

tr

Rise time

(

)

RL = 10 k

,

CL = 100 pF,

–55

°

C

142

123

ns

CL = 100  F,

See Figures 1 and 2

125

°

C

166

58

VI(PP) = 

±

10 V,

R

10 k

25

°

C

138

132

tf

Fall time

(

)

RL = 10 k

,

CL = 100 pF,

–55

°

C

142

123

ns

CL = 100  F,

See Figure 1

125

°

C

166

158

VI(PP) = 

±

10 V,

R

10 k

25

°

C

11%

5%

Overshoot factor

(

)

RL = 10 k

,

CL = 100 pF,

–55

°

C

16%

6%

CL = 100  F,

See Figures 1 and 2

125

°

C

14%

8%

TL032M

f = 10 Hz

25

°

C

49

49

V

Equivalent 

input noise

TL032M

RS = 20 

,

f = 1 kHz

25

°

C

41

41

nV/

Hz

Vn

input noise 

voltage

TL032AM

S

,

See Figure 3

f = 10 Hz

25

°

C

49

49

nV/

Hz

voltage

TL032AM

f = 1 kHz

25

°

C

41

41

In

Equivalent input noise 

current

 f = 1 kHz

25

°

C

0.003

0.003

pA/

Hz

V

10

V

R

10 k

25

°

C

1

1.1

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

–55

°

C

1

1.1

MHz

CL = 25  F,

See Figure 4

125

°

C

0.9

0.9

V

10 mV

R

10 k

25

°

C

61

°

65

°

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

–55

°

C

57

°

64

°

CL = 25  F,

See Figure 4

125

°

C

59

°

62

°

† For VCC

±

 = 

±

5 V, VI(PP) = 

±

1 V; for VCC

±

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

22

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL032Y electrical characteristics, T

A

 = 25

°

C

TL032Y

PARAMETER

TEST CONDITIONS

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

VIO

Input offset voltage

VO = 0

VIC = 0

0.69

0.57

mV

α

VIO

Temperature coefficient of 

input offset voltage

VO = 0,

RS = 50 

VIC = 0,

11.5

10.8

µ

V/

°

C

IIO

Input offset current

VO = 0,

See Figure 5

VIC = 0,

1

1

pA

IIB

Input bias current

VO = 0,

See Figure 5

VIC = 0,

2

2

pA

VICR

Common-mode input voltage range

–3.4

to

5.4

–13.4

to

15.4

V

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

4.3

14

V

VOM–

Maximum negative peak

output voltage swing

RL = 10 k

–4.2

–13.9

V

AVD

Large-signal differential

voltage amplification†

RL = 10 k

12

14.3

V/mV

ri

Input resistance

1012

1012

ci

Input capacitance

5

14

pF

CMRR

Common-mode rejection ratio

VIC = VICRmin,

VO = 0, RS = 50 

87

94

dB

kSVR

Supply-voltage rejection ratio

(

VCC

±

/

VIO)

VCC

±

 = 

±

5 V to 

±

15 V,

VO = 0, RS = 50 

96

96

dB

PD

Total power dissipation

(two amplifiers)

VO = 0,

No load

3.8

13

mW

VO1/VO2

Crosstalk attenuation

AVD = 100 dB

120

120

dB

† At VCC

±

 = 

±

5 V, VO = 2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

TL032Y operating characteristics, T

A

 = 25

°

C

TL032Y

PARAMETER

TEST CONDITIONS

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

SR+

Positive slew rate at unity gain†

RL = 10 k

,

CL = 100 pF,

12

2.9

V/

µ

s

SR–

Negative slew rate at unity gain†

See Figure 1 and Note 8

3.9

5.1

V/

µ

s

tr

Rise time

VI(PP) = 

±

10 V,

138

132

ns

tf

Fall time

RL = 10 k

,,

CL = 100 pF,

138

132

ns

Overshoot factor

See Figures 1 and 2

11%

5%

V

Equivalent input noise voltage

RS = 20 

,

f = 10 Hz

49

49

nV/

Hz

Vn

Equivalent input noise voltage

S

,

See Figure 3

f = 1 kHz

41

41

nV/

Hz

In

Equivalent input noise current

f = 1 kHz

0.003

0.003

pA/

Hz

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

1

1.1

MHz

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

61

°

65

°

† For VCC

±

 = 

±

5 V, VI(PP) = 

±

1 V; for VCC

±

 = 

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

23

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL034C and TL034AC electrical characteristics at specified free-air temperature

TL034C, TL034AC

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

TL034C

25

°

C

0.91

6

0.79

4

VIO

Input offset voltage

TL034C

Full range†

8.2

6.2

mV

VIO

Input offset voltage

V

0

TL034AC

25

°

C

0.7

3.5

0.58

1.5

mV

VO = 0,

VIC = 0,

TL034AC

Full range†

5.7

3.7

α

VIO

Temperature coefficient of

VIC = 0,

RS = 50 

TL034C

25

°

C to

70

°

C

11.6

12

µ

V/

°

C

α

VIO

input offset voltage

TL034AC

25

°

C to

70

°

C

11.6

12

25

µ

V/

°

C

Input offset voltage 

long-term drift‡

25

°

C

0.04

0.04

µ

V/mo

IIO

Input offset current

VO = 0, VIC = 0,

25

°

C

1

100

1

100

pA

IIO

Input offset current

O

,

IC

,

See Figure 5

70

°

C

9

200

12

200

pA

IIB

Input bias current

VO = 0,  VIC = 0,

25

°

C

2

200

2

200

pA

IIB

Input bias current

O

,

IC

,

See Figure 5

70

°

C

50

400

80

400

pA

VICR

Common-mode input

25

°

C

–1.5

to

4

–3.4

to

5.4

–11.5

to

14

–13.4

to

15.4

V

VICR

voltage range

Full range†

–1.5

to

4

–11.5

to

14

V

M

i

iti

k

25

°

C

3

4.3

13

14

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

0

°

C

3

4.2

13

14

V

out ut voltage swing

70

°

C

3

4.3

13

14

M

i

ti

k

25

°

C

–3

–4.2

–12.5

–13.9

VOM–

Maximum negative peak

output voltage swing

RL = 10 k

0

°

C

–3

–4.1

–12.5

–13.9

V

out ut voltage swing

70

°

C

–3

–4.2

–12.5

–14

L

i

l diff

ti l

25

°

C

4

12

5

14.3

AVD

Large-signal differential

voltage amplification§

RL = 10 k

0

°

C

3

11.1

4

13.5

V/mV

voltage am lification§

70

°

C

4

13.3

5

15.2

ri

Input resistance

25

°

C

1012

1012

ci

Input capacitance

25

°

C

5

14

pF

C

d

VIC = VICRmin,

25

°

C

70

87

75

94

CMRR

Common-mode

rejection ratio

VIC = VICRmin,

VO = 0,

0

°

C

70

87

75

94

dB

rejection ratio

RS = 50 

70

°

C

70

87

75

94

Supply-voltage

25

°

C

75

96

75

96

kSVR

Su

ly voltage 

rejection ratio

VO = 0, RS = 50 

0

°

C

75

96

75

96

dB

(

VCC

±

/

VIO)

70

°

C

75

96

75

96

† Full range is 0

°

C to 70

°

C.

‡ Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150

°

C extrapolated to

TA = 25

°

C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

§ At VCC

±

 = 

±

5 V, VO = 

±

2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

24

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL034C and TL034AC electrical characteristics at specified free-air temperature (continued)

TL034C, TL034AC

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

T t l

di

i

ti

25

°

C

7.7

10

26

34

PD

Total power dissipation

(two amplifiers)

VO = 0, No load

0

°

C

7.4

10

25.3

34

mW

(two am lifiers)

70

°

C

7.6

10

25.2

34

25

°

C

0.77

1

0.87

1.12

ICC

Supply current (four amplifiers)

VO = 0, No load

0

°

C

0.74

1

0.85

1.12

mA

70

°

C

0.76

1

0.84

1.12

VO1/VO2

Crosstalk attenuation

AVD = 100

25

°

C

120

120

dB

TL034C and TL034AC operating characteristics at specified free-air temperature

TL034C, TL034AC

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

P

iti

l

t

t

it

25

°

C

2

1.5

2.9

SR+

Positive slew rate at unity

gain†

0

°

C

1.8

1

2.6

V/

µ

s

gain†

RL = 10 k

,

CL 100 pF

70

°

C

2.2

1.5

3.2

N

ti

l

t

t

it

CL = 100 pF,

See Figure 1

25

°

C

3.9

1.5

5.1

SR–

Negative slew rate at unity

gain†

See Figure 1

0

°

C

3.7

1.5

5

V/

µ

s

gain†

70

°

C

4

1.5

5

VI(PP) = 

±

10 V,

R

10 k

25

°

C

138

132

tr

Rise time

(

)

RL = 10 k

,

CL = 100 pF,

0

°

C

134

127

ns

CL = 100  F,

See Figures 1 and 2

70

°

C

150

142

VI(PP) = 

±

10 V,

R

10 k

25

°

C

138

132

tf

Fall time

(

)

RL = 10 k

,

CL = 100 pF,

0

°

C

134

127

ns

CL = 100  F,

See Figure 1

70

°

C

150

142

VI(PP) = 

±

10 V,

R

10 k

25

°

C

11%

5%

Overshoot factor

(

)

RL = 10 k

,

CL = 100 pF,

0

°

C

10%

4%

CL = 100  F,

See Figures 1 and 2

70

°

C

12%

6%

TL034C

f = 10 Hz

25

°

C

83

83

V

Equivalent input

TL034C

RS = 20 

,

f = 1 kHz

25

°

C

43

43

nV/

Hz

Vn

q

noise voltage

TL034AC

S

,

See Figure 3

f = 10 Hz

25

°

C

83

83

nV/

Hz

TL034AC

f = 1 kHz

25

°

C

43

43

60

In

Equivalent input noise current

f = 1 kHz

25

°

C

0.003

0.003

pA/

Hz

V

10

V R

10 k

25

°

C

1

1.1

B1

Unity-gain bandwidth

VI = 10 mV, RL = 10 k

,

CL = 25 pF See Figure 4

0

°

C

1

1.1

MHz

CL = 25  F, See Figure 4

70

°

C

1

1

V

10

V R

10 k

25

°

C

61

°

65

°

φ

m

Phase margin at unity gain

VI = 10 mV, RL = 10 k

,

CL = 25 pF See Figure 4

0

°

C

61

°

65

°

CL = 25  F, See Figure 4

70

°

C

60

°

64

°

† For VCC

±

 = 

±

5 V, VI(PP) = 

±

1 V; for VCC

±

 = 

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

25

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL034I and TL034AI electrical characteristics at specified free-air temperature

TL034I, TL034AI

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

TL034I

25

°

C

0.91

3.6

0.79

4

VIO

Input offset voltage

TL034I

Full range†

9.3

7.3

mV

VIO

Input offset voltage

V

0

TL034AI

25

°

C

0.7

3.5

0.58

1.5

mV

VO = 0,

VIC = 0,

TL034AI

Full range†

6.8

4.8

α

VIO

Temperature coefficient

VIC = 0,

RS = 50 

TL034I

25

°

C to

85

°

C

11.5

11.6

µ

V/

°

C

α

VIO

of input offset voltage

TL034AI

25

°

C to

85

°

C

11.5

11.6

25

µ

V/

°

C

Input offset voltage

long-term drift‡

25

°

C

0.04

0.04

µ

V/mo

IIO

Input offset current

VO = 0, VIC = 0,

25

°

C

1

100

1

100

pA

IIO

Input offset current

O

,

IC

,

See Figure 5

85

°

C

0.02

0.45

0.02

0.45

nA

IIB

Input bias current

VO = 0, VIC = 0,

25

°

C

2

200

2

200

pA

IIB

Input bias current

O

,

IC

,

See Figure 5

85

°

C

0.2

0.9

0.3

0.9

nA

VICR

Common-mode input

25

°

C

–1.5

to

4

–3.4

to

5.4

–11.5

to

14

–13.4

to

15.4

V

VICR

voltage range

Full range†

–1.5

to

4

–11.5

to

14

V

M

i

iti

k

25

°

C

3

4.3

13

14

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

–40

°

C

3

4.1

13

14

V

out ut voltage swing

85

°

C

3

4.4

13

14

M

i

ti

k

25

°

C

–3

–4.2

–12.5

–13.9

VOM–

Maximum negative peak

output voltage swing

RL = 10 k

–40

°

C

–3

–4.1

–12.5

–13.8

V

out ut voltage swing

85

°

C

–3

–4.2

–12.5

–14

AVD

Large-signal differential

RL = 10 k

–40

°

C

4

12

5

14.3

V/mV

AVD

g

g

voltage amplification§

RL = 10 k

85

°

C

3

8.4

4

11.6

V/mV

ri

Input resistance

25

°

C

1012

1012

ci

Input capacitance

25

°

C

5

4

pF

C

d

VIC = VICRmin,

25

°

C

70

87

75

94

CMRR

Common-mode

rejection ratio

VIC = VICRmin,

VO = 0,

–40

°

C

70

87

75

94

dB

rejection ratio

RS = 50 

85

°

C

70

87

75

94

Supply-voltage

25

°

C

75

96

75

96

kSVR

Su

ly voltage 

rejection ratio

VO = 0, RS = 50 

–40

°

C

75

96

75

96

dB

(

VCC

±

VIO)

85

°

C

75

96

75

96

† Full range is –40

°

C to 85

°

C.

‡ Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150

°

C extrapolated to

TA = 25

°

C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

§ At VCC

±

 = 

±

5 V, VO = 

±

2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

26

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL034I and TL034AI electrical characteristics at specified free-air temperature (continued)

TL034I, TL034AI

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

T t l

di

i

ti

25

°

C

7.7

10

26

34

PD

Total power dissipation

(four amplifiers)

VO = 0, No load

–40

°

C

5.8

10

21.7

34

mW

(four am lifiers)

85

°

C

7.4

10

24.8

34

25

°

C

0.77

1

0.87

1.12

ICC

Supply current (four amplifiers)

VO = 0, No load

–40

°

C

0.58

1

0.72

1.12

mA

85

°

C

0.74

1

0.83

1.12

VO1/VO2

Crosstalk attenuation

AVD = 100

25

°

C

120

120

dB

TL034I and TL034AI operating characteristics

TL034I, TL034AI

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

P

iti

l

t

t

it

25

°

C

2

1.5

2.9

SR+

Positive slew rate at unity

gain†

–40

°

C

1.6

1

2.1

V/

µ

s

gain†

RL = 10 k

,

CL = 100 pF,

85

°

C

2.3

1.5

3.3

N

ti

l

t

t

it

L

,

See Figure 1

L

,

25

°

C

3.9

1.5

5.1

SR–

Negative slew rate at unity

gain†

–40

°

C

3.3

1.5

4.8

V/

µ

s

gain†

85

°

C

4.1

1.5

4.9

25

°

C

138

132

tr

Rise time

–40

°

C

132

123

ns

85

°

C

154

146

VI(PP) = 

±

10 V,

R

10 k

25

°

C

138

132

tf

Fall time

(

)

RL = 10 k

,

CL = 100 pF

–40

°

C

132

123

ns

CL = 100  F,

See Figures 1 and 2

85

°

C

154

146

g

25

°

C

11%

5%

Overshoot factor

–40

°

C

12%

5%

85

°

C

13%

7%

TL034I

f = 10 Hz

25

°

C

83

83

V

Equivalent input

TL034I

RS = 20 

,

f = 1 kHz

25

°

C

43

43

nV/

Hz

Vn

q

noise voltage

TL034AI

S

,

See Figure 3

f = 10 Hz

25

°

C

83

83

nV/

Hz

TL034AI

f = 1 kHz

25

°

C

43

43

60

In

Equivalent input noise

current

f = 1 kHz

25

°

C

0.003

0.003

pA/

Hz

V

10

V

R

10 k

25

°

C

1

1.1

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

–40

°

C

1

1.1

MHz

CL = 25  F,

See Figure 4

85

°

C

0.9

1

V

10

V

R

10 k

25

°

C

61

°

65

°

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

–40

°

C

61

°

65

°

CL = 25  F,

See Figure 4

85

°

C

60

°

64

°

† For VCC

±

 = 

±

5 V, VI(PP) = 

±

1 V; for VCC

±

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

27

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL034M and TL034AM electrical characteristics at specified free-air temperature

TL034M, TL034AM

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

TL034M

25

°

C

0.91

3.6

0.78

4

VIO

Input offset voltage

TL034M

Full range†

11

9

mV

VIO

Input offset voltage

V

0

TL034AM

25

°

C

0.7

3.5

0.58

1.5

mV

VO = 0,

VIC = 0,

TL034AM

Full range†

8.5

6.5

α

VIO

Temperature coefficient of

VIC = 0,

RS = 50 

TL034M

25

°

C to

125

°

C

10.6

10.9

µ

V/

°

C

α

VIO

input offset voltage

TL034AM

25

°

C to

125

°

C

10.6

10.9

µ

V/

°

C

Input offset voltage 

long-term drift‡

 25

°

C

0.04

0.04

µ

V/mo

IIO

Input offset current

VO = 0, VIC = 0,

 25

°

C

1

100

1

100

pA

IIO

Input offset current

O

,

IC

,

See Figure 5

125

°

C

0.2

10

0.2

10

nA

IIB

Input bias current

VO = 0, VIC = 0,

 25

°

C

2

200

2

200

pA

IIB

Input bias current

O

,

IC

,

See Figure 5

125

°

C

7

20

8

20

nA

VICR

Common-mode input

25

°

C

–1.5

to

4

–3.4

to

5.4

–11.5

to

14

–13.4

to

15.4

V

VICR

voltage range

Full range†

–1.5

to

4

–11.5

to

14

V

M

i

iti

k

 25

°

C

3

4.3

13

14

VOM+

Maximum positive peak

output voltage swing

RL = 10 k

–55

°

C

3

4.1

13

14

V

out ut voltage swing

125

°

C

3

4.4

13

14

M

i

ti

k

 25

°

C

–3

–4.2

–12.5

–13.9

VOM–

Maximum negative peak

output voltage swing

RL = 10 k

–55

°

C

–3

–4

–12.5

–13.8

V

out ut voltage swing

125

°

C

–3

–4.3

–12.5

–14

L

i

l diff

ti l

 25

°

C

4

12

5

14.3

AVD

Large-signal differential

voltage amplification§

RL = 10 k

–55

°

C

3

7.1

4

10.4

V/mV

voltage am lification§

125

°

C

3

12.9

4

15

ri

Input resistance

 25

°

C

1012

1012

ci

Input capacitance

 25

°

C

5

4

pF

C

d

V

V

i

 25

°

C

70

87

75

94

CMRR

Common-mode

rejection ratio

VIC = VICRmin,

VO = 0 RS = 50

–55

°

C

70

87

70

94

dB

rejection ratio

VO = 0, RS = 50 

 125

°

C

70

87

70

94

Supply-voltage

 25

°

C

75

96

75

96

kSVR

Su

ly voltage 

rejection ratio

VO = 0, RS = 50 

–55

°

C

75

95

75

95

dB

(

VCC

±

/

VIO)

125

°

C

75

96

75

96

† Full range is –55

°

C to 125

°

C.

‡ Typical values are based on the input offset voltage shift observed through 168 hours of operating life test at TA = 150

°

C extrapolated to TA =

25

°

C using the Arrhenius equation and assuming an activation energy of 0.96 eV.

§ At VCC

±

 = 

±

5 V, VO = 

±

2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

28

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL034M and TL034AM electrical characteristics at specified free-air temperature (continued)

TL034M, TL034AM

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

A

MIN

TYP

MAX

MIN

TYP

MAX

T t l

di

i

ti

 25

°

C

7.7

10

26

34

PD

Total power dissipation

(two amplifiers)

VO = 0,

No load

–55

°

C

4.6

12

18.7

45

mW

(two am lifiers)

125

°

C

7.1

12

23.6

45

 25

°

C

0.77

1

0.87

1.12

ICC

Supply current (two amplifiers)

VO = 0,

No load

–55

°

C

0.46

1.2

0.62

1.5

mA

125

°

C

0.71

1.2

0.79

1.5

VO1/VO2

Crosstalk attenuation

AVD = 100

 25

°

C

120

120

dB

TL034M and TL034AM operating characteristics at specified free-air temperature

TL034M, TL034AM

PARAMETER

TEST CONDITIONS

TA

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

P

iti

l

t

t

it

25

°

C

2

1.5

2.9

SR+

Positive slew rate at unity

gain†

–55

°

C

1.4

1

1.9

V/

µ

s

gain†

RL = 10 k

,

CL 100 pF

125

°

C

2.4

1

3.5

N

ti

l

t

t

it

CL = 100 pF,

See Figure 1

25

°

C

3.9

1.5

5.1

SR–

Negative slew rate at unity

gain†

See Figure 1

–55

°

C

3.2

1

4.6

V/

µ

s

gain†

125

°

C

4.1

1

4.7

VI(PP) = 

±

10 V,

R

10 k

25

°

C

138

132

tr

Rise time

(

)

RL = 10 k

,

CL = 100 pF,

–55

°

C

142

123

ns

CL = 100  F,

See Figures 1 and 2

125

°

C

166

58

VI(PP) = 

±

10 V,

R

10 k

25

°

C

138

132

tf

Fall time

(

)

RL = 10 k

,

CL = 100 pF,

–55

°

C

142

123

ns

CL = 100  F,

See Figure 1

125

°

C

166

158

VI(PP) = 

±

10 V,

R

10 k

25

°

C

11%

5%

Overshoot factor

(

)

RL = 10 k

,

CL = 100 pF,

–55

°

C

16%

6%

CL = 100  F,

See Figures 1 and 2

125

°

C

14%

8%

TL034M

f = 10 Hz

25

°

C

83

83

V

Equivalent input

TL034M

RS = 20 

,

f = 1 kHz

25

°

C

43

43

nV/

Hz

Vn

q

noise voltage

TL034AM

S

,

See Figure 3

f = 10 Hz

25

°

C

83

83

nV/

Hz

TL034AM

f = 1 kHz

25

°

C

43

43

In

Equivalent input noise

current

 f = 1 kHz

25

°

C

0.003

0.003

pA/

Hz

V

10

V

R

10 k

25

°

C

1

1.1

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

–55

°

C

1

1.1

MHz

CL = 25  F,

See Figure 4

125

°

C

0.9

0.9

V

10

V

R

10 k

25

°

C

61

°

65

°

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF

RL = 10 k

,

See Figure 4

–55

°

C

57

°

64

°

CL = 25  F,

See Figure 4

125

°

C

59

°

62

°

† For VCC

±

 = 

±

5 V, VI(PP) = 

±

1 V; for VCC

±

±

15 V, VI(PP) = 

±

5 V.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

29

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TL034Y electrical characteristics, T

A

 = 25

°

C

TL034Y

PARAMETER

TEST CONDITIONS

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

VIO

Input offset voltage

VO = 0

VIC = 0

0.91

0.79

mV

α

VIO

Temperature coefficient of input

offset voltage

VO = 0,

RS = 50 

VIC = 0,

11.6

12

µ

V/

°

C

IIO

Input offset current

VO = 0,

VIC = 0,

1

1

pA

IIO

Input offset current

O

,

See Figure 5

IC

,

2

2

pA

IIB

Input bias current

VO = 0,

VIC = 0,

2

2

pA

IIB

Input bias current

O

,

See Figure 5

IC

,

7

8

nA

VICR

Common-mode input voltage range

–3.4

to

5.4

–13.4

to

15.4

V

VOM+

Maximum positive peak output

voltage swing

RL = 10 k

4.3

14

V

VOM–

Maximum negative peak output

voltage swing

RL = 10 k

–4.2

–13.9

V

AVD

Large-signal differential voltage

amplification†

RL = 10 k

12

14.3

V/mV

ri

Input resistance

1012

1012

ci

Input capacitance

5

4

pF

CMRR

Common-mode rejection ratio

VIC = VICRmin,

VO = 0, RS = 50 

87

94

dB

kSVR

Supply-voltage rejection ratio

(

VCC

±

VIO)

VO = 0,

RS = 50 

96

96

dB

PD

Total power dissipation (four

amplifiers)

VO = 0,

No load

7.7

26

mW

ICC

Supply current (four amplifiers)

VO = 0,

No load

0.77

0.87

mA

VO1/VO2

Crosstalk attenuation

AVD = 100

120

120

dB

† At VCC

±

 = 

±

5 V, VO = 

±

2.3 V; at VCC

±

 = 

±

15 V, VO = 

±

10 V.

TL034Y operating characteristics, T

A

 = 25

°

C

TL034Y

PARAMETER

TEST CONDITIONS

VCC

±

 = 

±

5 V

VCC

±

 = 

±

15 V

UNIT

MIN

TYP

MAX

MIN

TYP

MAX

SR+

Positive slew rate at unity gain

RL = 10 k

,

CL = 100 pF,

2

1.5

2.9

V/

µ

s

SR–

Negative slew rate at unity gain

L

,

See Figure 1

L

,

3.9

1.5

5.1

V/

µ

s

tr

Rise time

VI(PP) = 

±

10 V,

138

132

ns

tf

Fall time

RL = 10 k

,

CL = 100 pF,

138

132

ns

Overshoot factor

See Figures 1 and 2

11%

5%

V

Eq i alent inp t noise oltage

RS = 20 

,

f = 10 kHz

83

83

nV/

Hz

Vn

Equivalent input noise voltage

S

,

See Figure 3

f = 1 kHz

43

43

nV/

Hz

In

Equivalent input noise current

 f = 1 kHz

0.003

0.003

pA/

Hz

B1

Unity-gain bandwidth

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

1

1.1

MHz

φ

m

Phase margin at unity gain

VI = 10 mV,

CL = 25 pF,

RL = 10 k

,

See Figure 4

61

°

65

°

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

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POST OFFICE BOX 655303 

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PARAMETER MEASUREMENT INFORMATION

Figure 1. Slew-Rate and Overshoot Test Circuit

VI

+

VCC+

VCC–

VO

CL

(see Note A)

RL

NOTE A: CL includes fixture capacitance.

Figure 2. Rise Time and Overshoot Waveform

Overshoot

10%

90%

tr

Figure 3. Noise-Voltage Test Circuit

VCC–

VCC+

VO

RS

RS

10 k

Figure 4. Unity-Gain Bandwidth and

Phase-Margin Test Circuit

(see Note A)

CL

VO

VCC–

VCC+

RL

VI

10 k

100 

NOTE A: CL includes fixture capacitance.

+

+

VCC+

VCC–

Picoammeters

Ground Shield

Figure 5. Input-Bias and Offset-Current Test Circuit

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

31

POST OFFICE BOX 655303 

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PARAMETER MEASUREMENT INFORMATION

typical values

Typical values presented in this data sheet represent the median (50% point) of device parametric performance.

input bias and offset current

At the picoampere bias current level typical of the TL03x and TL03xA, accurate measurement of the bias current

becomes difficult. Not only does this measurement require a picoammeter, but test-socket leakages easily can

exceed the actual device bias currents. To accurately measure these small currents, Texas Instruments uses

a two-step process. The socket leakage is measured using picoammeters with bias voltages applied but with

no device in the socket. The device is then inserted into the socket and a second test that measures both the

socket leakage and the device input bias current is performed. The two measurements are then subtracted

algebraically to determine the bias current of the device.

noise

With the increasing emphasis on low noise levels in many of today’s applications, the input noise voltage density

is performed at f = 1 kHz, unless otherwise noted.

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TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

32

POST OFFICE BOX 655303 

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TYPICAL CHARACTERISTICS

Table of Graphs

FIGURE

Distribution of TL03x input offset voltages

6 – 11

Distribution of TL03x input offset-voltage temperature coefficients

12, 13, 14

Input bias current vs Common-mode input voltage

15

Input bias current and Input offset current vs Free-air temperature

16

Common-mode input voltage range vs Supply voltage

17

Common-mode input voltage range vs Free-air temperature

18

Output voltage vs Differential input voltage

19, 20

Maximum peak output voltage vs Supply voltage

21

Maximum peak-to-peak output voltage vs Frequency

22

Maximum peak output voltage vs Output current

23, 24

Maximum peak output voltage vs Free-air temperature

25, 26

Large-signal differential voltage amplification vs Load resistance

27

Large-signal differential voltage amplification and Phase shift vs Frequency

28

Large-signal differential voltage amplification and Phase shift vs Free-air temperature

29

Output impedance vs Frequency with VCC

"

 = 

"

15 V

30

Common-mode rejection ratio vs Frequency

31, 32

Common-mode rejection ratio vs Free-air temperature

33

Supply-voltage rejection ratio vs Free-air temperature

34

Short-circuit output current vs Supply voltage

35

Short-circuit output current vs Time

36

Short-circuit output current vs Free-air temperature

37

Equivalent input noise voltage vs Frequency (for TL031 and TL031A)

38

Equivalent input noise voltage vs Frequency (for TL032 and TL032A)

39

Equivalent input noise voltage vs Frequency (for TL034 and TL034A)

40

Supply current vs Supply voltage (for TL031 and TL031A)

41

Supply current vs Supply voltage (for TL032 and TL032A)

42

Supply current vs Supply voltage (for TL034 and TL034A)

43

Supply current vs Free-air temperature (for TL031 and TL031A)

44

Supply current vs Free-air temperature (for TL032 and TL032A)

45

Supply current vs Free-air temperature (for TL034 and TL034A)

46

Slew rate vs Load resistance

47, 48

Slew rate vs Free-air temperature

49, 50

Overshoot factor vs Load capacitance

51

Total harmonic distortion vs Frequency

52

Unity-gain bandwidth vs Supply voltage

53

Unity-gain bandwidth vs Free-air temperature

54

Phase margin vs Supply voltage

55

Phase margin vs Load capacitance

56

Phase margin vs Free-air temperature

57

Voltage-follower small-signal pulse response vs Time

58

Voltage-follower large-signal pulse response vs Time

59, 60

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

33

POST OFFICE BOX 655303 

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TYPICAL CHARACTERISTICS

Figure 6

0

Percentage of Units – %

VIO – Input Offset Voltage – mV

2

4

6

8

10

12

14

–1.2

–0.6

0

0.6

1.2

DISTRIBUTION OF TL031

INPUT OFFSET VOLTAGE

ÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎ

1681 Units Tested From 1 Wafer Lot

ÎÎÎÎÎ

ÎÎÎÎÎ

VCC

±

 = 

±

15 V

ÎÎÎÎ

ÎÎÎÎ

TA = 25

°

C

P Package

Figure 7

0

–900

Percentage of Units – %

VIO – Input Offset Voltage –

 µ

V

2

4

6

8

10

12

14

16

–600

0

300

600

900

1433 Units Tested From 1 Wafer Lot

VCC

±

 = 

±

15 V

ÎÎÎÎÎ

P Package

DISTRIBUTION OF TL031A

INPUT OFFSET VOLTAGE

TA = 25

°

C

–300

Figure 8

–1.2

0

Percentage of 

Amplification – %

VIO – Input Offset Voltage – mV

12

–0.6

0

0.6

1.2

3

6

9

DISTRIBUTION OF TL032

INPUT OFFSET VOLTAGE

TA = 25

°

C

ÎÎÎÎ

P Package

ÎÎÎÎÎ

ÎÎÎÎÎ

VCC

±

 = 

±

15 V

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

1681 Amplifiers Tested From 1 Wafer Lot

Figure 9

–900

0

Percentage of 

Amplifiers – %

VIO – Input Offset Voltage – 

µ

V

900

15

–600

–300

0

300

600

3

6

9

12

DISTRIBUTION OF TL032A

INPUT OFFSET VOLTAGE

1321 Amplifiers Tested From 1 Wafer Lot

VCC

±

 = 

±

15 V

TA = 25

°

P Package

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

34

POST OFFICE BOX 655303 

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TYPICAL CHARACTERISTICS

Figure 10

–1.2

0

VIO – Input Offset Voltage – mV

12

–0.6

0

0.6

1.2

3

6

9

DISTRIBUTION OF TL034

INPUT OFFSET VOLTAGE

TA = 25

°

C

ÎÎÎÎ

D Package

ÎÎÎÎÎ

ÎÎÎÎÎ

VCC

±

 = 

±

15 V

ÎÎÎÎÎÎÎÎÎÎÎÎ

1681 Amplifiers Tested From 1 Wafer Lot

Percentage of 

Amplifiers – %

Figure 11

–1.8

0

Percentage of 

Amplifiers – %

VIO – Input Offset Voltage – mV

1.8

–1.2

0.6

0

0.6

1.2

3

6

9

12

DISTRIBUTION OF TL034A

INPUT OFFSET VOLTAGE

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

1716 Amplifiers Tested From 3 Wafer Lots

ÎÎÎÎÎ

N Package

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

VCC

±

 = 

±

15 V

TA = 25

°

C

15

Figure 12

0

–30

Percentage of Units – %

α

VIO – Input Offset-Voltage Temperature Coefficient – 

µ

V/

°

C

6

12

18

24

–20

–10

0

10

20

30

DISTRIBUTION OF TL031

INPUT OFFSET-VOLTAGE

TEMPERATURE COEFFICIENT

76 Units Tested From 1 Wafer Lot

VCC

±

 = 

±

15 V

TA = 25

°

C to 125

°

C

P Package

Figure 13

–40

0

Percentage of 

Amplifiers – %

α

VIO – Temperature Coefficient – 

µ

V/

°

C

40

30

5

10

15

20

25

–30

–20

–10

0

10

20

30

DISTRIBUTION OF TL032

INPUT OFFSET-VOLTAGE

TEMPERATURE COEFFICIENT

P Package

VCC

±

 = 

±

15 V

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎÎ

160 Amplifiers Tested From 2 Wafer Lots

ÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎ

TA = 25

°

C to 125

°

C

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

35

POST OFFICE BOX 655303 

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TYPICAL CHARACTERISTICS

Figure 14

–40

0

Percentage of 

Amplifiers – %

α

VIO – Temperature Coefficient – 

µ

V/

°

C

40

30

5

10

15

20

25

–30

–20

–10

0

10

20

30

DISTRIBUTION OF TL034

INPUT OFFSET-VOLTAGE

TEMPERATURE COEFFICIENT

D Package

VCC

±

 = 

±

15 V

ÎÎÎÎÎÎÎÎÎÎÎÎ

ÎÎÎÎÎÎÎÎÎÎÎÎ

160 Amplifiers Tested From 2 Wafer Lots

ÎÎÎÎÎÎ

TA = 25

°

C to 125

°

C

Figure 15

–10

–15

IIB – Input Bias Current – nA

VIC – Common-Mode Input Voltage – V

–5

0

5

10

–10

–5

0

5

10

15

TA = 25

°

C

VCC

±

 = 

±

15 V

INPUT BIAS CURRENT

vs

COMMON-MODE INPUT VOLTAGE

IBI

Figure 16

0.001

25

TA – Free-Air Temperature – 

°

C

0.01

0.1

1

10

45

65

85

105

125

INPUT BIAS CURRENT AND

INPUT OFFSET CURRENT

vs

FREE-AIR TEMPERATURE

ÁÁÁÁÁ

ÁÁÁÁÁ

ÁÁÁÁÁ

VCC

±

 = 

±

15 V

VO = 0

VIC = 0

ÎÎ

ÎÎ

IIO

ÎÎÎ

ÎÎÎ

IIB

IIB and IIO – Input Bias and Input Offset Currents – nA IBI

I IO

Figure 17

–16

0

VIC – Common-Mode Input V

oltage – V

|VCC

±

| – Supply Voltage – V

–12

–8

–4

0

4

8

12

16

2

4

6

8

10

12

14

16

TA = 25

°

C

ÎÎÎÎÎ

ÎÎÎÎÎ

Positive Limit

ÎÎÎÎÎ

ÎÎÎÎÎ

Negative Limit

COMMON-MODE INPUT VOLTAGE

vs

SUPPLY VOLTAGE

ÁÁ

ÁÁ

ÁÁ

V

IC

† Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

36

POST OFFICE BOX 655303 

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TYPICAL CHARACTERISTICS

Figure 18

125

100

75

50

25

0

–25

–50

20

15

10

5

0

–5

–10

–15

TA – Free-Air Temperature –

°

C

–75

–20

VCC

±

 = 

±

15 V

ÎÎÎÎÎ

Positive Limit

ÎÎÎÎÎ

ÎÎÎÎÎ

Negative Limit

COMMON-MODE INPUT VOLTAGE RANGE

vs

FREE-AIR TEMPERATURE

VIC – Common-Mode Input V

oltage – V

ÁÁÁ

ÁÁÁ

V

IC

Figure 19

–1.5

–5

–1

0

0.5

1

1.5

–4

–3

–2

–1

0

1

2

3

4

5

OUTPUT VOLTAGE

vs

DIFFERENTIAL INPUT VOLTAGE

–0.5

ÎÎÎÎÎ

ÎÎÎÎÎ

RL = 1 k

ÎÎÎÎ

RL = 2 k

ÎÎÎÎ

RL = 5 k

ÎÎÎÎÎ

ÎÎÎÎÎ

RL = 10 k

ÎÎÎÎÎ

ÎÎÎÎÎ

RL = 20 k

VCC

±

 = 

±

5 V

TA = 25

°

C

ÎÎÎÎ

RL = 1 k

ÎÎÎÎ

ÎÎÎÎ

RL = 2 k

ÎÎÎÎ

ÎÎÎÎ

RL = 5 k

ÎÎÎÎ

ÎÎÎÎ

RL = 20 k

ÎÎÎÎ

RL = 10 k

– Output V

oltage – V

V

O

VID – Differential Input Voltage – V

Figure 20

–1.5

–15

–1

–0.5

0

0.5

1

–10

–5

0

5

10

1.5

OUTPUT VOLTAGE

vs

DIFFERENTIAL INPUT VOLTAGE

15

ÈÈÈÈ

ÈÈÈÈ

RL = 5 k

ÈÈÈÈ

ÈÈÈÈ

RL = 10 k

ÈÈÈÈ

RL = 20 k

ÈÈÈÈ

ÈÈÈÈ

RL = 50 k

ÈÈÈÈ

RL = 5 k

ÈÈÈÈ

ÈÈÈÈ

RL = 10 k

ÈÈÈÈ

ÈÈÈÈ

RL = 20 k

ÈÈÈÈ

RL = 50 k

TA = 25

°

C

VCC

±

 = 

±

15 V

VID – Differential Input Voltage – V

– Output V

oltage – V

V

O

Figure 21

–16

0

VOM – Maximum Peak Output V

oltage – V

|VCC

±

| – Supply Voltage – V

–12

–8

–4

0

4

8

12

16

2

4

6

8

10

12

14

16

TA = 25

°

C

RL = 10 k

ÎÎÎ

ÎÎÎ

VOM–

VOM+

MAXIMUM PEAK OUTPUT VOLTAGE

vs

SUPPLY VOLTAGE

ÁÁ

ÁÁ

V

OM

† Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

37

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 22

0

1 k

VOPP

 – Maximum Peak-to-Peak Output V

oltage – V

f – Frequency – Hz

5

10

15

20

25

30

10 k

100 k

1 M

TA = 125

°

C

VCC

±

 = 

±

15 V

TA = –55

°

C

VCC

±

 = 

±

5 V

MAXIMUM PEAK-TO-PEAK OUTPUT VOLTAGE

vs

FREQUENCY

ÁÁ

ÁÁ

ÁÁ

V

O(PP)

ÎÎÎÎÎ

ÎÎÎÎÎ

RL = 10 k

Figure 23

– Maximum Peak Output V

oltage – V

0

0

|IO| – Output Current – mA

1

2

3

4

5

5

10

15

20

VOM+

VOM–

VCC

±

 = 

±

5 V

TA = 25

°

C

MAXIMUM PEAK OUTPUT VOLTAGE

vs

OUTPUT CURRENT

|V

|

OM

Figure 24

0

0

|IO| – Output Current – mA

5

10

15

20

25

30

2

4

6

8

10

12

14

16

ÎÎÎ

ÎÎÎ

VOM–

ÎÎÎÎ

ÎÎÎÎ

VOM+

VCC

±

 = 

±

15 V

TA = 25

°

C

MAXIMUM PEAK OUTPUT VOLTAGE

vs

OUTPUT CURRENT

– Maximum Peak Output V

oltage – V

|V

|

OM

Figure 25

–5

–75

VOM – Maximum Peak Output V

oltage – V

TA – Free-Air Temperature – 

°

C

–4

–3

–2

–1

0

1

2

3

4

5

–50

–25

0

25

50

75

100

125

ÎÎÎÎ

VOM+

ÎÎÎ

ÎÎÎ

VOM–

ÎÎÎÎÎ

ÎÎÎÎÎ

VCC

±

 = 

±

5 V

RL = 10 k

MAXIMUM PEAK OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

ÁÁÁ

ÁÁÁ

V

OM

† Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

38

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 26

–16

TA – Free-Air Temperature –

°

C

–75

–50

–25

0

25

50

75

100

125

–12

–8

–4

0

4

8

12

16

VOM+

MAXIMUM PEAK OUTPUT VOLTAGE

vs

FREE-AIR TEMPERATURE

ÎÎÎÎÎ

ÎÎÎÎÎ

ÎÎÎÎÎ

VCC

±

 = 

±

15 V

RL = 10 k

VOM – Maximum Peak Output V

oltage – V

ÁÁ

ÁÁ

ÁÁ

V

OM

ÎÎÎ

ÎÎÎ

VOM–

Figure 27

0

RL – Load Resistance – 

5

10

15

20

25

30

35

40

10 k

100 k

1 M

VCC

±

 = 

±

15 V

VCC

±

 = 

±

5 V

TA = 25

°

C

VO = 

±

1 V

LARGE-SIGNAL DIFFERENTIAL

VOLTAGE AMPLIFICATION

vs

LOAD RESISTANCE

– Large-Signal Differential

A

VD

V

oltage 

Amplification – V/mV

0.1

10

f – Frequency – Hz

100 k

10 k

1 k

100

10

1

100

1 k

10 k

100 k

1 M

10 M

0

°

30

°

60

°

90

°

120

°

150

°

180

°

Phase Shift

ÎÎÎ

ÎÎÎ

AVD

VCC

±

 = 

±

15 V

RL = 10 k

CL = 25 pF

TA = 25

°

C

LARGE-SIGNAL DIFFERENTIAL VOLTAGE

AMPLIFICATION AND PHASE SHIFT

vs

FREQUENCY

ÎÎÎÎ

ÎÎÎÎ

Phase Shift

– Large-Signal Differential

A

VD

V

oltage Amplification

Figure 28

† Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

39

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 29

–75

1

TA – Free-Air Temperature – 

°

C

125

50

–50

–25

0

25

50

75

100

10

VCC

±

 = 

±

15 V

ÎÎÎÎ

ÎÎÎÎ

RL = 10 k

VCC

±

 = 

±

5 V

LARGE-SIGNAL DIFFERENTIAL

VOLTAGE AMPLIFICATION

vs

FREE-AIR TEMPERATURE

– Large-Signal Differential

A

VD

V

oltage 

Amplification – V/mV

Figure 30

1 k

10

zo – Output Impedence – 

f – Frequency – Hz

100 k

200

10 k

20

40

60

80

100

AVD = 100

AVD = 10

AVD = 1

VCC

±

 = 

±

15 V

ro (open loop) 

 250 

OUTPUT IMPEDANCE

vs

FREQUENCY

ÁÁ

ÎÎÎÎ

TA = 25

°

C

ÁÁ

ÁÁ

z

o

Figure 31

10

0

CMRR – Common-Mode Rejection Ratio – dB

f – Frequency – Hz

10 M

100

100

1 k

10 k

100 k

1 M

10

20

30

40

50

60

70

80

90

VCC

±

 = 

±

5 V

ÎÎÎÎ

ÎÎÎÎ

TA = 25

°

C

COMMON-MODE REJECTION RATIO

vs

FREQUENCY

Figure 32

10

0

f – Frequency – Hz

10 M

100

100

1 k

10 k

100 k

1 M

10

20

30

40

50

60

70

80

90

ÎÎÎÎ

ÎÎÎÎ

TA = 25

°

C

VCC

±

 = 

±

15 V

COMMON-MODE REJECTION RATIO

vs

FREQUENCY

CMRR – Common-Mode Rejection Ratio – dB

† Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

40

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 33

–75

75

CMRR – Common-Mode Rejection Ratio – dB

TA – Free-Air Temperature – 

°

C

125

95

–50

–25

0

25

50

75

100

80

85

90

VCC

±

 = 

±

15 V

VCC

±

 = 

±

5 V

COMMON-MODE REJECTION RATIO

vs

FREE-AIR TEMPERATURE

ÎÎÎÎÎ

ÎÎÎÎÎ

VIC = VICRmin

Figure 34

–75

90

 – Supply V

oltage Rejection Ratio – dB

TA – Free-Air Temperature – 

°

C

125

100

–50

–25

0

25

50

75

100

92

94

96

98

VCC

±

 = 

±

5 V to 

±

15 V

SUPPLY-VOLTAGE REJECTION RATIO

vs

FREE-AIR TEMPERATURE

SVR

k

Figure 35

0

–30

IOS – Short-Circuit Output Current – mA

|VCC

±

| – Supply Voltage – V

16

30

2

4

6

8

10

12

14

–20

–10

0

10

20

VO = 0

TA = 25

°

C

VID = 100 mV

VID = –100 mV

SHORT-CIRCUIT OUTPUT CURRENT

vs

SUPPLY VOLTAGE

ÁÁ

ÁÁ

OSI

Figure 36

0

–20

t – Time – s

30

30

5

10

15

20

25

–10

0

10

20

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

ÎÎÎÎÎÎ

VCC

±

 = 

±

15 V

TA = 25

°

C

VID = –100 mV

VID = 100 mV

SHORT-CIRCUIT OUTPUT CURRENT

vs

TIME

IOS – Short-Circuit Output Current – mA

ÁÁ

ÁÁ

OSI

† Data at high and low temperatures are applicable only within the recommended operating free-air temperature ranges of the various devices.

background image

TL03x, TL03xA, TL03xY

ENHANCED-JFET LOW-POWER LOW-OFFSET

OPERATIONAL AMPLIFIERS

 

SLOS180B – FEBRUARY 1997 – REVISED FEBRUARY 1999

41

POST OFFICE BOX 655303