GHz TECHNOLOGY INC. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. GHz RECOMMENDS THAT
BEFORE THE PRODUCT(S) DESCRIBED HEREIN ARE WRITTEN INTO SPECIFICATIONS, OR USED IN CRITICAL APPLICATIONS,
THAT THE PERFORMANCE CHARACTERISTICS BE VERIFIED BY CONTACTING THE FACTORY.
GHz Technology Inc. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 / 986-8120
0204-125
125 Watts, 28 Volts, Class AB
Defcom 225 - 400
MHz
GENERAL DESCRIPTION
The 0204-125 is a double input matched COMMON EMITTER broadband
transistor specifically intended for use in the 225-400 MHz frequency band. It
may be operated in Class AB or C. Gold metallization and silicon diffused
resistors ensure ruggedness and high reliability.
CASE OUTLINE
55JT- Style 2
ABSOLUTE MAXIMUM RATINGS
Maximum Power Dissipation @ 25 C 270 Watts
o
Maximum Voltage and Current
BVces Collector to Emiter Voltage 65 Volts
BVebo Emitter to Base Voltage 4.0 Volts
Ic Collector Current 16.0 A
Maximum Temperatures
Storage Temperature - 65 to +150 C
o
Operating Junction Temperature +200 C
o
ELECTRICAL CHARACTERISTICS @ 25 C
O
SYMBOL
CHARACTERISTICS
TEST CONDITIONS
MIN
TYP
MAX
UNITS
Pout
Pin
Pg
η
c
VSWR
Power Output
Power Input
Power Gain
Efficiency
Load Mismatch Tolerance
F = 400 MHz
Vcc = 28 Volts
125
7.0
8.5
60
25
5:1
Watts
Watts
dB
%
BVebo
2
BVces
2
BVceo
2
Cob
2
h
FE
2
θ
jc
Emitter to Base Breakdown
Collector to Emitter Breakdown
Collector to Emitter Breakdown
Output Capacitance
DC - Current Gain
Thermal Resistance
Ie = 10 mA
Ic = 100 mA
Ie = 100 mA
Vcb = 28 V, F = 1 MHz
Vce = 5 V, Ic = 1 A
4.0
60
32
20
70
100
0.65
Volts
Volts
Volts
pF
C/W
o
Note 2: Per side
Issue August 1996
