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ISSUE 1 - MARCH 2000

ZXT12N20DX

SuperSOT4™

DUAL 20V NPN SILICON LOW SATURATION SWITCHING TRANSISTOR

SUMMARY

V

CEO

=20V; R

SAT

= 40m ; I

C

= 3.5A

DESCRIPTION

This new 4th generation ultra low saturation transistor utilises the Zetex

matrix structure combined with advanced assembly techniques to give

extremely low on state losses. This makes it ideal for high efficiency, low

voltage switching applications.

FEATURES

Extremely Low Equivalent On Resistance

Extremely Low Saturation Voltage

h

FE

characterised up to 10A

I

C

=3.5A Continuous Collector Current

MSOP8 package

APPLICATIONS

DC - DC Converters

Power Management Functions

Power switches

Motor control

ORDERING INFORMATION

DEVICE

REEL SIZE

(inches)

TAPE WIDTH

(mm)

QUANTITY

PER REEL

ZXT12N20DXTA

7

12mm embossed

1000 units

ZXT12N20DXTC

13

12mm embossed

4000 units

DEVICE MARKING

T12N20DX

Top View

1

MSOP8

1

2

3

4

8

7

6

5

E1

E2

B1

B2

C1

C2

C2

C1

C1

E1

B1

C2

E2

B2

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ISSUE 1 - MARCH 2000

ZXT12N20DX

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)(d)

R

θ

JA

143

°C/W

Junction to Ambient (b)(d)

R

θ

JA

100

°C/W

Junction to Ambient (a)(e)

R

θ

JA

120

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t

р5 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph.

(d) For device with one active die.

(e) For device with two active die running at equal power.

2

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

UNIT

Collector-Base Voltage

V

CBO

50

V

Collector-Emitter Voltage

V

CEO

20

V

Emitter-Base Voltage

V

EBO

7.5

V

Peak Pulse Current

I

CM

15

A

Continuous Collector Current

I

C

3.5

A

Base Current

I

B

500

mA

Power Dissipation at TA=25°C (a)(d)

Linear Derating Factor

P

D

0.87

6.9

W

mW/°C

Power Dissipation at TA=25°C (a)(e)

Linear Derating Factor

P

D

1.04

8.3

W

mW/°C

Power Dissipation at TA=25°C (b)(d)

Linear Derating Factor

P

D

1.25

10

W

mW/°C

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

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ISSUE 1 - MARCH 2000

ZXT12N20DX

3

CHARACTERISTICS

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ISSUE 1 - MARCH 2000

ZXT12N20DX

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base Breakdown

Voltage

V

(BR)CBO

50

100

V

I

C

=100

␮A

Collector-Emitter Breakdown

Voltage

V

(BR)CEO

20

30

V

I

C

=10mA*

Emitter-Base Breakdown Voltage

V

(BR)EBO

7.5

8.5

V

I

E

=100

␮A

Collector Cut-Off Current

I

CBO

100

nA

V

CB

=40V

Emitter Cut-Off Current

I

EBO

100

nA

V

EB

=6V

Collector Emitter Cut-Off Current

I

CES

100

nA

V

CES

=40V

Collector-Emitter Saturation

Voltage

V

CE(sat)

7.0

65

120

160

10

100

160

200

mV

mV

mV

mV

I

C

=0.1A, I

B

=10mA*

I

C

=1A, I

B

=10mA*

I

C

=3A, I

B

=150mA*

I

C

=3.5A, I

B

=50mA*

Base-Emitter Saturation Voltage

V

BE(sat)

0.9

1.0

V

I

C

=3.5A, I

B

=50mA*

Base-Emitter Turn-On Voltage

V

BE(on)

0.85

0.9

V

I

C

=3.5A, V

CE

=2V*

Static Forward Current Transfer

Ratio

h

FE

250

300

200

40

400

450

320

70

900

I

C

=10mA, V

CE

=2V*

I

C

=1A, V

CE

=2V*

I

C

=3.5A, V

CE

=2V*

I

C

=10A, V

CE

=2V*

Transition Frequency

f

T

112

MHz

I

C

=50mA, V

CE

=10V

f=50MHz

Output Capacitance

C

obo

43

pF

V

CB

=10V, f=1MHz

Turn-On Time

t

(on)

65

ns

V

CC

=10V, I

C

=2A

I

B1

=I

B2

=40mA

Turn-Off Time

t

(off)

400

ns

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

2%

4

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ISSUE 1 - MARCH 2000

ZXT12N20DX

5

TYPICAL CHARACTERISTICS

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ISSUE 1 - MARCH 2000

ZXT12N20DX

PACKAGE DIMENSIONS

PAD LAYOUT DETAILS

6

Zetex plc.

Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries)

Fax: (44)161 622 4420

Zetex GmbH

Zetex Inc.

Zetex (Asia) Ltd.

These are supported by

Streitfeldstraße 19

47 Mall Drive, Unit 4

3510 Metroplaza, Tower 2

agents and distributors in

D-81673 München

Commack NY 11725

Hing Fong Road,

major countries world-wide

Germany

USA

Kwai Fong, Hong Kong

© Zetex plc 2000

Telefon: (49) 89 45 49 49 0

Telephone: (631) 543-7100

Telephone:(852) 26100 611

Fax: (49) 89 45 49 49 49

Fax: (631) 864-7630

Fax: (852) 24250 494

Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for

any purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves

the right to alter without notice the specification, design, price or conditions of supply of any product or service.

H

E

D

e X 6

A1

L

C

1

2

3

4

5

6

7

8

θ°

B

Conforms to JEDEC MO-187 Iss A

DIM

Millimetres

Inches

MIN

MAX

MIN

MAX

A

1.10

0.043

A1

0.05

0.15

0.002

0.006

B

0.25

0.40

0.010

0.016

C

0.13

0.23

0.005

0.009

D

2.90

3.10

0.114

0.122

e

0.65

BSC

0.0256

BSC

E

2.90

3.10

0.114

0.122

H

4.90

BSC

0.193

BSC

L

0.40

0.70

0.016

0.028