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Top View

SUMMARY

V

(BR)DSS

=30V; R

DS(ON)

=0.135

⍀; I

D

=2.3A

DESCRIPTION

This new generation of high density MOSFETs from Zetex utilises a unique

structure that combines the benefits of low on-resistance with fast switching

speed. This makes them ideal for high efficiency, low voltage, power

management applications.

FEATURES

Low on-resistance

Fast switching speed

Low threshold

Low gate drive

Low profile SOIC package

APPLICATIONS

DC - DC Converters

Power Management Functions

Disconnect switches

Motor control

ORDERING INFORMATION

DEVICE

REEL SIZE 

(inches)

TAPE WIDTH (mm)

QUANTITY

PER REEL

ZXMD63N03XTA

7

12mm embossed

1000  units

ZXMD63N03XTC

13

12mm embossed

4000 units

DEVICE MARKING 

ZXM63N03

DUAL 30V N-CHANNEL ENHANCEMENT MODE MOSFET

MSOP8

ZXMD63N03X

33

PROVISIONAL ISSUE A - JULY 1999

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ZXMD63N03X

34

THERMAL RESISTANCE

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)(d)

R

θ

JA

143

°C/W

Junction to Ambient (b)(d)

R

θ

JA

100

°C/W

Junction to Ambient (a)(e)

R

θ

JA

120

°C/W

NOTES

(a) For a device surface mounted on 25mm x 25mm FR4 PCB with high coverage of single sided 1oz copper,

in still air conditions

(b) For a device surface mounted on FR4 PCB measured at t

р10 secs.

(c) Repetitive rating - pulse width limited by maximum junction temperature. Refer to Transient Thermal

Impedance graph. 

(d) For device with one active die.

(e) For device with two active die running at equal power.

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

LIMIT

UNIT

Drain-Source Voltage

V

DSS

30

V

Gate- Source Voltage 

V

GS

±

 20

V

Continuous Drain Current (V

GS

=4.5V; T

A

=25°C)(b)(d)

            (V

GS

=4.5V; T

A

=70°C)(b)(d)

I

D

2.3

1.8

A

Pulsed Drain Current (c)(d)

I

DM

14

A

Continuous Source Current (Body Diode)(b)(d)

I

S

1.5

A

Pulsed Source Current (Body Diode)(c)(d)

I

SM

14

A

Power Dissipation at T

A

=25°C (a)(d)

Linear Derating Factor 

P

D

0.87

6.9

W

mW/°C

Power Dissipation at T

A

=25°C (a)(e)

Linear Derating Factor 

P

D

1.04

8.3

W

mW/°C

Power Dissipation at T

A

=25°C (b)(d)

Linear Derating Factor 

P

D

1.25

10

W

mW/°C

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

PROVISIONAL ISSUE A - JULY 1999

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ZXMD63N03X

0.1

10

100

0.0001

0.1

100

0

80

160

V

DS

- Drain-Source Voltage (V)

Safe Operating Area

0.1

10

100

I

D

- D

rain

 C

u

rr

en

t (

A

)

DC

1s

100ms

D=0.1

D=0.2

T

h

e

rm

a

l R

e

sist

a

n

ce

 (

°C

/W)

120

60

D=0.05

0

Pulse Width (s)

Transient Thermal Impedance

M

a

x

 Po

w

e

r D

is

s

ipa

ti

on

 (

W

a

tt

s

)

1.4

0.8

0

T - Temperature (°)

Derating Curve

Refer Note (b)

 

Single Pulse

D=0.5

10ms

1ms

100us

Pulse Width (s)

 

 

 

 

 

 

100

40

80

20

0.01

10

0.001

1

160

80

0

0.0001

1000

0.001

0.01

0.1

1

10

Transient Thermal Impedance

T

h

e

rm

a

l R

e

sist

a

n

c

e

 (

°C

/W

)

D=0.5

D=0.2

D=0.1

D=0.05

Single Pulse

100

140

60

120

100

40

20

Refer Note (a)

1.2

0.6

1.0

0.4

0.2

60

140

20

40

100

120

10

10

Refer Note (b)

Refer Note (a)

Refer Note (a)

 CHARACTERISTICS

35

PROVISIONAL ISSUE A - JULY 1999

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ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT CONDITIONS.

STATIC

Drain-Source  Breakdown Voltage

V

(BR)DSS

30

V

I

D

=250

µ

A, V

GS

=0V

Zero Gate Voltage Drain Current

I

DSS

1

µ

A

V

DS

=30V, V

GS

=0V

Gate-Body Leakage

I

GSS

100

nA

V

G S

=

±

 20V, V

DS

=0V

Gate-Source Threshold Voltage

V

G S(th)

1.0

V

I

D

=250

µ

A, V

DS

= V

GS

Static Drain-Source On-State Resistance

(1)

R

DS(on)

0.135

0.200

V

G S

=10V, I

D

=1.7A

V

G S

=4.5V, I

D

=0.85A

Forward Transconductance (3)

g

fs

1.9

S

V

DS

=10V,I

D

=0.85A

DYNAMIC (3)

Input Capacitance 

C

iss

290

pF

V

DS

=25 V, V

GS

=0V,

f=1MHz

Output Capacitance 

C

oss

70

pF

Reverse Transfer Capacitance

C

rss

20

pF

SWITCHING(2) (3)

Turn-On Delay Time 

t

d(on)

2.5

ns

V

DD 

=15V, I

D

=1.7A

R

G

=6.1

, R

D

=8.7

(Refer to test

circuit)

Rise Time 

t

r

4.1

ns

Turn-Off Delay Time 

t

d(off)

9.6

ns

Fall Time

t

f

4.4

ns

Total Gate Charge 

Q

g

8

nC

V

DS

=24V,V

GS

=10V,

I

D

=1.7A

(Refer to test

circuit)

Gate-Source Charge

Q

gs

1.2

nC

Gate Drain Charge 

Q

gd

2

nC

SOURCE-DRAIN DIODE

Diode Forward Voltage (1)

V

SD

0.95

V

T

j

=25°C, I

S

=1.7A,

V

G S

=0V

Reverse Recovery Time (3)

t

rr

16.9

ns

T

j

=25°C, I

F

=1.7A,

di/dt= 100A/

µ

s

Reverse Recovery Charge(3)

Q

rr

9.5

nC

(1) Measured under pulsed conditions. Width=300

µ

s. Duty cycle 

2% .

(2) Switching characteristics are independent of operating junction temperature.

(3) For design aid only, not subject to production testing.

36

ZXMD63N03X

PROVISIONAL ISSUE A - JULY 1999

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0.1

10

100

2

4

6

0.1

10

100

0.2

0.8

1.4

200

50

-100

0.1

100

V

DS

- Drain-Source Voltage (V)

Output Characteristics

0.1

10

100

I

D

- D

ra

in Cur

re

n

t (A

)

VGS

+25°C

VDS=10V

I

D

- D

ra

in Cur

re

n

t (A

)

100

10

0.1

V

GS

- Gate-Source Voltage (V)

Typical Transfer Characteristics

R

DS

(on)

- D

ra

in-So

ur

c

e

 O

n

-R

e

s

is

ta

nc

e

 (

)

10

1

0.01

I

D

- Drain Current (A)

On-Resistance v Drain Current

I

D

- D

ra

in Cur

re

n

t (A

)

100

0.1

V

DS

- Drain-Source Voltage (V)

Output Characteristics

N

o

rm

al

is

ed

 R

DS

(o

n)

a

nd V

GS

(t

h

)

1.8

1.2

0.4

T

- Junction Temperature (°C)

Normalised R

DS(on) 

and V

GS(th)

 v Temperature

I

SD

- R

ever

s

e

 D

rain

 C

u

rr

en

t (

A

)

100

10

0.1

V

SD

- Source-Drain Voltage (V)

Source-Drain Diode Forward Voltage 

T=150°C

VGS=10V

T=25°C

RDS(on)

ID=1.7A

VGS=VDS

ID=250uA

VGS(th)

1

1

10V 8V 7V 6V 5V

4.5V

4V

3.5V

3V

10

+150°C

1

10V 8V 7V 6V

5V

VGS

4.5V

4V

3.5V

3V

10

1

1.6

1.0

1.4

0.8

0.6

0

150

-50

100

1

3.5

5.5

2.5

3

4.5

5

1

0.4

1.0

0.6

1.2

T=150 C

T=25 C

0.1

1

VGS=3V

VGS=4.5V

VGS=10V

TYPICAL CHARACTERISTICS

37

ZXMD63N03X

PROVISIONAL ISSUE A - JULY 1999

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Basic Gate Charge Waveform

Gate Charge Test Circuit

Switching Time Waveforms

Switching Time Test Circuit

TYPICAL CHARACTERISTICS

0.1

10

100

0

4

8

V

DS

- Drain Source Voltage (V)

Capacitance v Drain-Source Voltage 

0

250

500

C -

 Ca

pa

c

it

a

n

c

e

 (

p

F

)

ID=1.7A

V

GS

- Ga

te

-S

o

u

rc

e

 V

o

lt

a

g

e

 (V

)

10

0

Q -Charge (nC)

Gate-Source Voltage v Gate Charge

VDS=24V

Ciss

Coss

Crss

Vgs=0V

f=1Mhz

450

200

400

350

150

100

300

50

1

9

8

7

6

VDS=15V

7

6

5

4

3

2

1

1

2

3

5

ZXMD63N03X

38

PROVISIONAL ISSUE A - JULY 1999

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ZXMD63N03X

H

E

D

e X 6

A

A1

L

C

1

2

3

4

5

6

7

8

θ°

B

Conforms to JEDEC MO-187 Iss A

PACKAGE DIMENSIONS

DIM

Millimetres

Inches

MIN

MAX

MIN

MAX

A

1.10

0.043

A1

0.05

0.15

0.002

0.006

B

0.25

0.40

0.010

0.016

C

0.13

0.23

0.005

0.009

D

2.90

3.10

0.114

0.122

e

0.65

BSC

0.0256

BSC

E

2.90

3.10

0.114

0.122

H

4.90

BSC

0.193

BSC

L

0.40

0.70

0.016

0.028

PAD LAYOUT DETAILS

40

 Zetex plc.

 Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

 Telephone: (44)161 622 4422 (Sales), (44)161 622 4444 (General Enquiries) 

 Fax: (44)161 622 4420 

Zetex GmbH

Zetex Inc.

Zetex (Asia) Ltd.

These are supported by

Streitfeldstraße 19

47 Mall Drive, Unit 4

3510 Metroplaza, Tower 2

agents and distributors in

D-81673 München

Commack NY 11725

Hing Fong Road, 

major countries world-wide

Germany

USA

Kwai Fong, Hong Kong

©

Zetex plc 1999

Telefon: (49) 89 45 49 49 0

Telephone: (516) 543-7100

Telephone:(852) 26100 611

Fax: (49) 89 45 49 49 49

Fax: (516) 864-7630

Fax: (852) 24250 494

Internet:http://www.zetex.com

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or reproduced for any

purpose or form part of any order or contract or be regarded as a representation relating to the products or services concerned. The Company reserves the

right to alter without notice the specification, design, price or conditions of supply of any product or service.

PROVISIONAL ISSUE A - JULY 1999