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NPN SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 2 – MARCH 94

FEATURES

* 150 Volt V

CEO

* 4 Amps continuous current

* Up to 10 Amps peak current

* Very low saturation voltage

* P

tot

= 1.2 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

250

V

Collector-Emitter Voltage

V

CEO

150

V

Emitter-Base Voltage

V

EBO

6

V

Peak Pulse Current

I

CM

10

A

Continuous Collector Current

I

C

4

A

Practical Power Dissipation*

P

totp

1.58

W

Power Dissipation at T

amb

=25°C

P

tot

1.2

W

Operating and Storage Temperature Range

T

j

:Tstg

-55 to +200

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C unless otherwise stated)

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base  Breakdown

Voltage

V

(BR)CBO

250

375

V

I

C

=100

µ

A

Collector-Emitter Breakdown

Voltag

V

(BR)CER

250

375

V

IC=1

µ

A, RB

 ≤

1K

Collector-Emitter Breakdown

Voltage

V

(BR)CEO

150

180

V

I

C

=10mA*

Emitter-Base  Breakdown

Voltage

V

(BR)EBO

6

8

V

I

E

=100

µ

A

Collector Cut-Off Current

I

CBO

50

1

nA

µ

A

V

CB

=200V

V

CB

=200V, T

amb

=100°C

Collector Cut-Off Current

I

CER

1K

50

1

nA

µ

A

V

CB

=200V

V

CB

=200V, T

amb

=100°C

Emitter Cut-Off Current

I

EBO

10

nA

V

EB

=6V

Collector-Emitter Saturation

Voltage

V

CE(sat)

20

35

60

210

40

60

100

260

mV

mV

mV

mV

I

C

=100mA, I

B

=5mA*

I

C

=500mA, I

B

=50mA*

I

C

=1A, I

B

=100mA*

I

C

=4A, I

B

=400mA*

Base-Emitter 

Saturation Voltage

V

BE(sat)

960

1100

mV

I

C

=4A, I

B

=400mA*

E-Line

TO92 Compatible

ZTX855

2-300

C

  B

     E

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Base-Emitter 

Turn-On Voltage

V

BE(on)

0.88

1

V

IC=4A, V

CE

=5V*

Static Forward 

Current Transfer

Ratio

h

FE

100

100

35

200

200

55

10

300

I

C

=10mA, V

CE

=5V

I

C

=1A, V

CE

=5V*

I

C

=4A, V

CE

=5V*

I

C

=10A, V

CE

=5V*

Transition Frequency

f

T

90

MHz

I

C

=100mA, V

CE

=10V

f=50MHz

Output Capacitance

C

obo

22

pF

V

CB

=20V,  f=1MHz

Switching Times

t

on

t

off

66

2130

ns

ns

I

C

=1A, I

B!

=100mA

I

B2

=100mA, V

CC

=50V

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle 

2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance: Junction to Ambient

Junction to Case

R

th(j-amb)

R

th(j-case)

150

50

°C/W

°C/W

ZTX855

-40

2.0

1.0

0.0001

50

150

100

 Derating curve

T

 

-Temperature 

(°C) 

M

a

x

 P

ower

 D

iss

ipa

tion

 

(W

a

tt

s

)

Maximum transient thermal impedance

Pulse Width (seconds) 

T

h

ermal R

e

si

s

ta

n

ce (

°C

/W

)

10

100

1

0.1

0.01

4.0

3.0

-20

0

20 40

60 80 100 120

200

180

160

140

t

1

t

P

D=t

1

/t

P

Case te

m

peratu

re

Ambien

t tem

peratur

e

D.C.

D=0.6

D=0.2

D=0.1

Single Pulse

0.001

0

D=0.05

3-301

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NPN SILICON PLANAR MEDIUM POWER

HIGH CURRENT TRANSISTOR

ISSUE 2 – MARCH 94

FEATURES

* 150 Volt V

CEO

* 4 Amps continuous current

* Up to 10 Amps peak current

* Very low saturation voltage

* P

tot

= 1.2 Watt

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

250

V

Collector-Emitter Voltage

V

CEO

150

V

Emitter-Base Voltage

V

EBO

6

V

Peak Pulse Current

I

CM

10

A

Continuous Collector Current

I

C

4

A

Practical Power Dissipation*

P

totp

1.58

W

Power Dissipation at T

amb

=25°C

P

tot

1.2

W

Operating and Storage Temperature Range

T

j

:Tstg

-55 to +200

°C

*The power which can be dissipated assuming the device is mounted in a typical manner on a

P.C.B. with copper equal to 1 inch square minimum

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C unless otherwise stated)

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Collector-Base  Breakdown

Voltage

V

(BR)CBO

250

375

V

I

C

=100

µ

A

Collector-Emitter Breakdown

Voltag

V

(BR)CER

250

375

V

IC=1

µ

A, RB

 ≤

1K

Collector-Emitter Breakdown

Voltage

V

(BR)CEO

150

180

V

I

C

=10mA*

Emitter-Base  Breakdown

Voltage

V

(BR)EBO

6

8

V

I

E

=100

µ

A

Collector Cut-Off Current

I

CBO

50

1

nA

µ

A

V

CB

=200V

V

CB

=200V, T

amb

=100°C

Collector Cut-Off Current

I

CER

1K

50

1

nA

µ

A

V

CB

=200V

V

CB

=200V, T

amb

=100°C

Emitter Cut-Off Current

I

EBO

10

nA

V

EB

=6V

Collector-Emitter Saturation

Voltage

V

CE(sat)

20

35

60

210

40

60

100

260

mV

mV

mV

mV

I

C

=100mA, I

B

=5mA*

I

C

=500mA, I

B

=50mA*

I

C

=1A, I

B

=100mA*

I

C

=4A, I

B

=400mA*

Base-Emitter 

Saturation Voltage

V

BE(sat)

960

1100

mV

I

C

=4A, I

B

=400mA*

E-Line

TO92 Compatible

ZTX855

2-300

C

  B

     E

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C)

PARAMETER

SYMBOL

MIN.

TYP.

MAX. UNIT CONDITIONS.

Base-Emitter 

Turn-On Voltage

V

BE(on)

0.88

1

V

IC=4A, V

CE

=5V*

Static Forward 

Current Transfer

Ratio

h

FE

100

100

35

200

200

55

10

300

I

C

=10mA, V

CE

=5V

I

C

=1A, V

CE

=5V*

I

C

=4A, V

CE

=5V*

I

C

=10A, V

CE

=5V*

Transition Frequency

f

T

90

MHz

I

C

=100mA, V

CE

=10V

f=50MHz

Output Capacitance

C

obo

22

pF

V

CB

=20V,  f=1MHz

Switching Times

t

on

t

off

66

2130

ns

ns

I

C

=1A, I

B!

=100mA

I

B2

=100mA, V

CC

=50V

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle 

2%

THERMAL CHARACTERISTICS

PARAMETER

SYMBOL

MAX.

UNIT

Thermal Resistance: Junction to Ambient

Junction to Case

R

th(j-amb)

R

th(j-case)

150

50

°C/W

°C/W

ZTX855

-40

2.0

1.0

0.0001

50

150

100

 Derating curve

T

 

-Temperature 

(°C) 

M

a

x

 P

ower

 D

iss

ipa

tion

 

(W

a

tt

s

)

Maximum transient thermal impedance

Pulse Width (seconds) 

T

h

ermal R

e

si

s

ta

n

ce (

°C

/W

)

10

100

1

0.1

0.01

4.0

3.0

-20

0

20 40

60 80 100 120

200

180

160

140

t

1

t

P

D=t

1

/t

P

Case te

m

peratu

re

Ambien

t tem

peratur

e

D.C.

D=0.6

D=0.2

D=0.1

Single Pulse

0.001

0

D=0.05

3-301

background image

ZTX855

0.01

0.1

1

10

0.4

0

0.8

TYPICAL CHARACTERISTICS

 V

CE(sat)

v I

C

 

I

Collector Current (Amps) 

 V

CE

(s

at

- (V

olts)

I

Collector Current (Amps) 

V

BE(sat)

v I

C

 

I

- Collector Curre

n

t (Amps)

V

CE 

Collector Voltage (Volts) 

Safe Operating Area 

 

1

1000

10

100

0.01

0.1

1

10

Single Pulse Test at T

amb

=25°C

0.01

0.1

1

10

1.0

0.5

2.0

1.5

I

Collector Current (Amps) 

V

BE(on)

v I

C

 

 V

BE

 

- (V

olts)

 V

B

E

(s

at) 

- (

V

olts)

0.6

0.2

0.01

0.1

1

10

0

1.0

0.8

0.6

0.4

0.2

1.6

1.4

1.2

I

Collector Current (Amps) 

h

FE

v I

C

 

h

FE

 

- Normalised Gain

300

200

100

h

FE

 

- T

y

p

ical 

Gain

100

V

CE

=10V

100

0.001

0.01

0.1

1

10

1.0

0.5

2.0

1.5

100

0.001

V

CE

=5V

I

C

/I

B

=10

I

C

/I

B

=50

D.C.

   1s

     100ms

       10ms

1.0ms

     0.1ms

V

CE

=5V

I

C

/I

B

=50

I

C

/I

B

=10

100

0.1

3-302