background image

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 3 – JANUARY 1995

FEATURES

* Very Low Saturation Voltage

* High  Gain

* 4 Amp Continuous Current

APPLICATIONS

* DC-DC Convertors

* Power Management - Supply Switching

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

ZTX1047A

UNIT

Collector-Base Voltage

V

CBO

35

V

Collector-Emitter Voltage

V

CEO

10

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current

I

CM

20

A

Continuous Collector Current

I

C

4

A

Base Current

I

B

500

mA

Power Dissipation at T

amb

=25°C

P

tot

1

W

Operating and Storage Temperature

Range

T

j

:T

stg

-55 to +200

°C

ZTX1047A

C

  B

     E

E-Line

TO92 Compatible

 

 Zetex plc.

 Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

 Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) 

 Facsimile: (44)161-627 5467 

Zetex GmbH

Zetex Inc.

Zetex (Asia) Ltd.

These are supported by

Streitfeldstraße 19

87 Modular Avenue

3510 Metroplaza, Tower 2

agents and distributors in

D-81673 München

Commack NY11725

Hing Fong Road, Kwai Fong

major countries world-wide

Telefon: (49) 89 45 49 49 0

Telephone: (516) 543-7100

Telephone:(852) 26100 611

©

Zetex plc 1995

Fax: (49) 89 45 49 49 49

Fax: (516) 864-7630

Fax: (852) 24250 494

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied

or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or

services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any

product or service.

Transient Thermal Resistance

Pulse Width

0.1ms

20

60

100

140

180

1ms

10ms 100ms

10s

100s

1s

160

120

80

40

0

D=1(D.C)

D=0.2

D=0.1

D=0.05

D=0.5

t1

  

tp

D=t1

tp

Single Pulse

 Derating curve

T -Temperature 

(°C) 

M

ax 

P

ower D

issi

pati

on

- (Wa

tts)

-40

0.50

0.25

1.0

0.75

0

40

80

120

200

160

Amb

ient 

tem

perat

ure

SPICE PARAMETERS

*ZETEX  ZTX1047A Spice model   Last revision 20/01/95

*

.MODEL   ZTX1047A  NPN IS=9.73E-13  NF=1.0  BF=550  IKF=8.0  VAF=120

+               ISE=2.6E-13  NE=1.38  NR=1.0  BR=400  IKR=5  VAR=15

+               ISC=8E-13  NC=1.4  RB=0.1  RE=0.017  RC=0.010

+               CJC=195.4E-12  CJE=540.4E-12  MJC=0.257  MJE=0.359

+               VJC=0.390  VJE=0.753  TF=450E-12  TR=1.2E-9

*

© 

1995 ZETEX PLC

The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied

free of charge by Zetex for the purpose of research and design and may be used or copied intact

(including this notice) for that purpose only. All other rights are reserved. The model is believed

accurate but no condition or warranty as to its merchantability or fitness for purpose is given and

no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.

ZTX1047A

background image

1mA

100

200

300

400

500

600

700

0.2

0.4

0.6

0.8

1.0

0.8

0.6

0.4

0.2

0.2

0.4

0.6

0.8

0.8

0.6

0.4

0.2

10mA 100mA

1A

10A

10V

1V

100

1

0.1

10

100A

100mA

1mA 10mA

100A

1A

10A

10A

1A

100A

10mA

1mA

100mA

10A

1A

100A

10mA

1mA

100mA

100mA

1mA 10mA

100A

1A

10A

1.4

1.2

1.2

1.0

TYPICAL CHARACTERISTICS

I

C

-Collector Current

I

C

-Collector Current

I

C

-Collector Current

I

C

-Collector Current

V

CE

- Collector Voltage

I

C

-Collector Current

h

FE

v I

C

V

BE(sat)

v Ic

V

BE(on)

v I

C

V

CE(sat)

v I

C

V

CE(sat) 

v I

C

Safe Operating Area

Single Pulse Test Tamb=25C

+25°C

I

C

/I

B

=50

I

C

/I

B

=100

I

C

/I

B

=300

I

C

/I

B

=100

+100°C

+175°C

+25°C

-55°C

I

C

/I

B

=100

V

CE

=2V

V

CE

=2V

+25°C

+100°C

-55°C

+25°C

-55°C

+175°C

+100°C

DC

1s

100ms

10ms

1ms

100us

+25°C

-55°C

+175°C

+100°C

0.1V

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base  Breakdown

Voltage

V

(BR)CBO

35

55

V

I

C

=100

µ

A

Collector-Emitter

Breakdown Voltage

V

CES

35

55

V

IC=100

µ

A

Collector-Emitter

Breakdown Voltage

V

CEO

10

14

V

IC=10mA

Collector-Emitter

Breakdown Voltage

V

CEV

35

55

V

IC=100

µ

A, V

EB

=1V

Emitter-Base  Breakdown

Voltage

V

(BR)EBO

5

8.7

V

I

E

=100

µ

A

Collector Cut-Off Current

I

CBO

0.3

10

nA

V

CB

=20V

Emitter Cut-Off Current

I

EBO

0.3

10

nA

V

EB

=4V

Collector Emitter Cut-Off

Current

I

CES

0.3

10

nA

VCES=20V

Collector-Emitter Saturation

Voltage

V

CE(sat)

23

44

120

130

40

70

185

190

mV

mV

mV

mV

I

C

=0.5A, I

B

=10mA*

I

C

=1A, I

B

=10mA*

I

C

=3A, I

B

=10mA* 

I

C

=4A, I

B

=20mA* 

Base-Emitter 

Saturation Voltage

V

BE(sat)

860

950

mV

I

C

=4A, I

B

=20mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

810

900

mV

IC=4A, V

CE

=2V*

Static Forward Current

Transfer Ratio

h

FE

280

300

240

150

60

440

450

380

230

110

1200

I

C

=10mA, V

CE

=2V*

I

C

=1A, V

CE

=2V*

I

C

=4A, V

CE

=2V*

I

C

=10A, V

CE

=2V*

I

C

=20A, V

CE

=2V*

Transition Frequency

f

T

150

MHz

I

C

=50mA, V

CE

=10V

f=50MHz

Output Capacitance

C

obo

85

110

pF

V

CB

=10V, f=1MHz

Switching Times

t

on

130

ns

I

C

=4A, I

B

=40mA, V

CC

=10V

t

off

180

ns

I

C

=4A, I

B

=

±

40mA, V

CC

=10V

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle 

 2%

ZTX1047A

ZTX1047A

background image

1mA

100

200

300

400

500

600

700

0.2

0.4

0.6

0.8

1.0

0.8

0.6

0.4

0.2

0.2

0.4

0.6

0.8

0.8

0.6

0.4

0.2

10mA 100mA

1A

10A

10V

1V

100

1

0.1

10

100A

100mA

1mA 10mA

100A

1A

10A

10A

1A

100A

10mA

1mA

100mA

10A

1A

100A

10mA

1mA

100mA

100mA

1mA 10mA

100A

1A

10A

1.4

1.2

1.2

1.0

TYPICAL CHARACTERISTICS

I

C

-Collector Current

I

C

-Collector Current

I

C

-Collector Current

I

C

-Collector Current

V

CE

- Collector Voltage

I

C

-Collector Current

h

FE

v I

C

V

BE(sat)

v Ic

V

BE(on)

v I

C

V

CE(sat)

v I

C

V

CE(sat) 

v I

C

Safe Operating Area

Single Pulse Test Tamb=25C

+25°C

I

C

/I

B

=50

I

C

/I

B

=100

I

C

/I

B

=300

I

C

/I

B

=100

+100°C

+175°C

+25°C

-55°C

I

C

/I

B

=100

V

CE

=2V

V

CE

=2V

+25°C

+100°C

-55°C

+25°C

-55°C

+175°C

+100°C

DC

1s

100ms

10ms

1ms

100us

+25°C

-55°C

+175°C

+100°C

0.1V

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C unless otherwise stated).

PARAMETER

SYMBOL MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base  Breakdown

Voltage

V

(BR)CBO

35

55

V

I

C

=100

µ

A

Collector-Emitter

Breakdown Voltage

V

CES

35

55

V

IC=100

µ

A

Collector-Emitter

Breakdown Voltage

V

CEO

10

14

V

IC=10mA

Collector-Emitter

Breakdown Voltage

V

CEV

35

55

V

IC=100

µ

A, V

EB

=1V

Emitter-Base  Breakdown

Voltage

V

(BR)EBO

5

8.7

V

I

E

=100

µ

A

Collector Cut-Off Current

I

CBO

0.3

10

nA

V

CB

=20V

Emitter Cut-Off Current

I

EBO

0.3

10

nA

V

EB

=4V

Collector Emitter Cut-Off

Current

I

CES

0.3

10

nA

VCES=20V

Collector-Emitter Saturation

Voltage

V

CE(sat)

23

44

120

130

40

70

185

190

mV

mV

mV

mV

I

C

=0.5A, I

B

=10mA*

I

C

=1A, I

B

=10mA*

I

C

=3A, I

B

=10mA* 

I

C

=4A, I

B

=20mA* 

Base-Emitter 

Saturation Voltage

V

BE(sat)

860

950

mV

I

C

=4A, I

B

=20mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

810

900

mV

IC=4A, V

CE

=2V*

Static Forward Current

Transfer Ratio

h

FE

280

300

240

150

60

440

450

380

230

110

1200

I

C

=10mA, V

CE

=2V*

I

C

=1A, V

CE

=2V*

I

C

=4A, V

CE

=2V*

I

C

=10A, V

CE

=2V*

I

C

=20A, V

CE

=2V*

Transition Frequency

f

T

150

MHz

I

C

=50mA, V

CE

=10V

f=50MHz

Output Capacitance

C

obo

85

110

pF

V

CB

=10V, f=1MHz

Switching Times

t

on

130

ns

I

C

=4A, I

B

=40mA, V

CC

=10V

t

off

180

ns

I

C

=4A, I

B

=

±

40mA, V

CC

=10V

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle 

 2%

ZTX1047A

ZTX1047A

background image

NPN SILICON PLANAR MEDIUM POWER

HIGH GAIN TRANSISTOR

ISSUE 3 – JANUARY 1995

FEATURES

* Very Low Saturation Voltage

* High  Gain

* 4 Amp Continuous Current

APPLICATIONS

* DC-DC Convertors

* Power Management - Supply Switching

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

ZTX1047A

UNIT

Collector-Base Voltage

V

CBO

35

V

Collector-Emitter Voltage

V

CEO

10

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current

I

CM

20

A

Continuous Collector Current

I

C

4

A

Base Current

I

B

500

mA

Power Dissipation at T

amb

=25°C

P

tot

1

W

Operating and Storage Temperature

Range

T

j

:T

stg

-55 to +200

°C

ZTX1047A

C

  B

     E

E-Line

TO92 Compatible

 

 Zetex plc.

 Fields New Road, Chadderton, Oldham, OL9-8NP, United Kingdom.

 Telephone: (44)161-627 5105 (Sales), (44)161-627 4963 (General Enquiries) 

 Facsimile: (44)161-627 5467 

Zetex GmbH

Zetex Inc.

Zetex (Asia) Ltd.

These are supported by

Streitfeldstraße 19

87 Modular Avenue

3510 Metroplaza, Tower 2

agents and distributors in

D-81673 München

Commack NY11725

Hing Fong Road, Kwai Fong

major countries world-wide

Telefon: (49) 89 45 49 49 0

Telephone: (516) 543-7100

Telephone:(852) 26100 611

©

Zetex plc 1995

Fax: (49) 89 45 49 49 49

Fax: (516) 864-7630

Fax: (852) 24250 494

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied

or reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or

services concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any

product or service.

Transient Thermal Resistance

Pulse Width

0.1ms

20

60

100

140

180

1ms

10ms 100ms

10s

100s

1s

160

120

80

40

0

D=1(D.C)

D=0.2

D=0.1

D=0.05

D=0.5

t1

  

tp

D=t1

tp

Single Pulse

 Derating curve

T -Temperature 

(°C) 

M

ax 

P

ower D

issi

pati

on

- (Wa

tts)

-40

0.50

0.25

1.0

0.75

0

40

80

120

200

160

Amb

ient 

tem

perat

ure

SPICE PARAMETERS

*ZETEX  ZTX1047A Spice model   Last revision 20/01/95

*

.MODEL   ZTX1047A  NPN IS=9.73E-13  NF=1.0  BF=550  IKF=8.0  VAF=120

+               ISE=2.6E-13  NE=1.38  NR=1.0  BR=400  IKR=5  VAR=15

+               ISC=8E-13  NC=1.4  RB=0.1  RE=0.017  RC=0.010

+               CJC=195.4E-12  CJE=540.4E-12  MJC=0.257  MJE=0.359

+               VJC=0.390  VJE=0.753  TF=450E-12  TR=1.2E-9

*

© 

1995 ZETEX PLC

The copyright in this model and the design embodied belong to Zetex PLC (“Zetex”). It is supplied

free of charge by Zetex for the purpose of research and design and may be used or copied intact

(including this notice) for that purpose only. All other rights are reserved. The model is believed

accurate but no condition or warranty as to its merchantability or fitness for purpose is given and

no liability in respect of any use is accepted by Zetex PLC, its distributors or agents.

ZTX1047A