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SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1 - DECEMBER 2001

FEATURES

Low equivalent on resistance R

CE(sat)

= 350m

at 1A

PART MARKING DETAIL -

FZT591A

COMPLEMENTARY TYPE -

FZT491A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

-40

V

Collector-Emitter Voltage

V

CEO

-40

V

Emitter-Base Voltage

V

EBO

-5

V

Peak Pulse Current

I

CM

-2

A

Continuous Collector Current

I

C

-1

A

Base Current

I

B

-200

mA

Power Dissipation at T

amb

=25°C

P

tot

2

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL MIN.

MAX.

UNI

T

CONDITIONS.

Collector-Base Breakdown Voltage

V

(BR)CBO

-40

V

I

C

=-100

µ

A

Collector-Emitter Breakdown Voltage

V

(BR)CEO

-40

V

I

C

=-10mA*

Emitter-Base Breakdown Voltage

V

(BR)EBO

-5

V

I

E

=-100

µ

A

Collector Cut-Off Current

I

CBO

-100

nA

V

CB

=-30V

Emitter Cut-Off Current

I

EBO

-100

nA

V

EB

=-4V

Collector-Emitter Cut-Off Current

I

CES

-100

nA

V

CES

=-30V

Collector-Emitter Saturation

Voltage

V

CE(sat)

-0.2

-0.35

-0.5

V

V

V

I

C

=-100mA,I

B

=-1mA*

I

C

=-500mA,I

B

=-20mA*

I

C

=-1A, I

B

=-100mA*

Base-Emitter Saturation Voltage

V

BE(sat)

-1.1

V

I

C

=-1A, I

B

=-50mA*

Base-Emitter Turn-on Voltage

V

BE(on)

-1.0

V

I

C

=-1A, V

CE

=-5V*

Static Forward Current Transfer Ratio

h

FE

300

300

250

160

30

800

I

C

=-1mA,

I

C

=-100mA*,

I

C

=-500mA*, V

CE

=-5V

I

C

=-1A*,

I

C

=-2A*,

Transition Frequency

f

T

150

MHz I

C

=-50mA, V

CE

=-10V

f=100MHz

Output Capacitance

C

obo

10

pF

V

CB

=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

2%

Spice parameter data is available upon request for this device

FZT591A

1

FZT591A

2

C

E

B

C

background image

SOT223 PNP SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 1 - DECEMBER 2001

FEATURES

Low equivalent on resistance R

CE(sat)

= 350m

at 1A

PART MARKING DETAIL -

FZT591A

COMPLEMENTARY TYPE -

FZT491A

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

-40

V

Collector-Emitter Voltage

V

CEO

-40

V

Emitter-Base Voltage

V

EBO

-5

V

Peak Pulse Current

I

CM

-2

A

Continuous Collector Current

I

C

-1

A

Base Current

I

B

-200

mA

Power Dissipation at T

amb

=25°C

P

tot

2

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER

SYMBOL MIN.

MAX.

UNI

T

CONDITIONS.

Collector-Base Breakdown Voltage

V

(BR)CBO

-40

V

I

C

=-100

µ

A

Collector-Emitter Breakdown Voltage

V

(BR)CEO

-40

V

I

C

=-10mA*

Emitter-Base Breakdown Voltage

V

(BR)EBO

-5

V

I

E

=-100

µ

A

Collector Cut-Off Current

I

CBO

-100

nA

V

CB

=-30V

Emitter Cut-Off Current

I

EBO

-100

nA

V

EB

=-4V

Collector-Emitter Cut-Off Current

I

CES

-100

nA

V

CES

=-30V

Collector-Emitter Saturation

Voltage

V

CE(sat)

-0.2

-0.35

-0.5

V

V

V

I

C

=-100mA,I

B

=-1mA*

I

C

=-500mA,I

B

=-20mA*

I

C

=-1A, I

B

=-100mA*

Base-Emitter Saturation Voltage

V

BE(sat)

-1.1

V

I

C

=-1A, I

B

=-50mA*

Base-Emitter Turn-on Voltage

V

BE(on)

-1.0

V

I

C

=-1A, V

CE

=-5V*

Static Forward Current Transfer Ratio

h

FE

300

300

250

160

30

800

I

C

=-1mA,

I

C

=-100mA*,

I

C

=-500mA*, V

CE

=-5V

I

C

=-1A*,

I

C

=-2A*,

Transition Frequency

f

T

150

MHz I

C

=-50mA, V

CE

=-10V

f=100MHz

Output Capacitance

C

obo

10

pF

V

CB

=-10V, f=1MHz

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle

2%

Spice parameter data is available upon request for this device

FZT591A

1

FZT591A

2

C

E

B

C