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SOT23 NPN SILICON PLANAR

HIGH FREQUENCY TRANSISTOR

ISSUE 3 - JANUARY 1996

FEATURES

* High f

T

=900MHz Min

* Max capacitance=1pF

* Low noise 4.5dB

PARTMARKING DETAIL - 179

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

20

V

Collector-Emitter Voltage

V

CEO

12

V

Emitter-Base Voltage

V

EBO

2.5

V

Continuous Collector Current

I

C

 50

mA

Power Dissipation

P

tot

330

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT CONDITIONS.

Collector-Emitter Sustaining

Voltage

V

CEO(SUS)

12

V

I

C

= 3mA, I

B

=0

Collector-Base  Breakdown

Voltage

V

(BR)CBO

20

V

I

C

= 1

µ

A, I

E

=0

Emitter-Base  Breakdown

Voltage

V

(BR)EBO

2.5

V

I

E

=10

µ

A, I

C

=0

Collector Cut-Off

Current

I

CBO

0.02

1.0

µ

A

µ

A

V

CB

=15V, I

E

=0

V

CB

=15V, I

E

=0, T

amb

=150°C

Static Forward Current

Transfer Ratio

h

FE

25

250

I

C

=3mA, V

CE

=1V

Collector-Emitter Saturation

Voltage

V

CE(sat)

0.4

V

I

C

=10mA, I

B

=1mA

Base-Emitter 

Saturation Voltage

V

BE(sat)

1.0

V

I

C

=10mA, I

B

=1mA

Transition Frequency

f

T

900

2000

MHz I

C

=5mA, V

CE

=6V, f=100MHz

Collector-Base Capacitance

C

cb

1

pF

I

E

=0, V

CB

=10V, f=1MHz

Small Signal Current Gain

h

fe

25

300

I

C

=2mA, V

CE

=6V, f=1KHz

Collector Base Time Constant rb’C

c

3

14

ps

I

E

=2mA, V

CB

=6V, f=31.9MHz

Noise Figure

N

F

4.5

dB

I

C

=1.5mA, V

CE

=6V

R

S

=50

, f=200MHz

Common-Emitter Amplifier

Power Gain

Gpe

15

dB

I

C

=5mA, V

CE

=6V

f=200MHz

Spice parameter data is available upon request for this device

FMMT5179

FMMT5179

100

 50

0

150

200

100

TYPICAL CHARACTERISTICS

 h

FE

v I

C

 

I

(mA) 

 h

F

E

 

-G

a

in

 V

B

E

 

- (

V

olts)

V

CE

=1V

0.1

1

10

0.4

0.2

0

0.8

1.0

0.6

500

0

1500

1000

30

0

0.1

1

10

 C

C

B

 

(p

F

)

V

CB 

(Volts) 

1.2

 C

CB

v V

CB

 

 f

T

v I

C

 

V

CE

=6V

f=100MHz

175°C

100°C

25°C

-55°C

100

0.1

1

10

V

CE

=1V

175°C

100°C

25°C

-55°C

 f

T

 

- (

M

Hz)

I

(mA) 

100

0.1

1

10

I

(mA) 

1.0

0.8

0.6

0.4

0.2

 V

BE(on)

v I

C

 

I

E

=0

f=1MHz

C

B

E

SOT23

3 - 170

3 - 169

background image

SOT23 NPN SILICON PLANAR

HIGH FREQUENCY TRANSISTOR

ISSUE 3 - JANUARY 1996

FEATURES

* High f

T

=900MHz Min

* Max capacitance=1pF

* Low noise 4.5dB

PARTMARKING DETAIL - 179

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

20

V

Collector-Emitter Voltage

V

CEO

12

V

Emitter-Base Voltage

V

EBO

2.5

V

Continuous Collector Current

I

C

 50

mA

Power Dissipation

P

tot

330

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT CONDITIONS.

Collector-Emitter Sustaining

Voltage

V

CEO(SUS)

12

V

I

C

= 3mA, I

B

=0

Collector-Base  Breakdown

Voltage

V

(BR)CBO

20

V

I

C

= 1

µ

A, I

E

=0

Emitter-Base  Breakdown

Voltage

V

(BR)EBO

2.5

V

I

E

=10

µ

A, I

C

=0

Collector Cut-Off

Current

I

CBO

0.02

1.0

µ

A

µ

A

V

CB

=15V, I

E

=0

V

CB

=15V, I

E

=0, T

amb

=150°C

Static Forward Current

Transfer Ratio

h

FE

25

250

I

C

=3mA, V

CE

=1V

Collector-Emitter Saturation

Voltage

V

CE(sat)

0.4

V

I

C

=10mA, I

B

=1mA

Base-Emitter 

Saturation Voltage

V

BE(sat)

1.0

V

I

C

=10mA, I

B

=1mA

Transition Frequency

f

T

900

2000

MHz I

C

=5mA, V

CE

=6V, f=100MHz

Collector-Base Capacitance

C

cb

1

pF

I

E

=0, V

CB

=10V, f=1MHz

Small Signal Current Gain

h

fe

25

300

I

C

=2mA, V

CE

=6V, f=1KHz

Collector Base Time Constant rb’C

c

3

14

ps

I

E

=2mA, V

CB

=6V, f=31.9MHz

Noise Figure

N

F

4.5

dB

I

C

=1.5mA, V

CE

=6V

R

S

=50

, f=200MHz

Common-Emitter Amplifier

Power Gain

Gpe

15

dB

I

C

=5mA, V

CE

=6V

f=200MHz

Spice parameter data is available upon request for this device

FMMT5179

FMMT5179

100

 50

0

150

200

100

TYPICAL CHARACTERISTICS

 h

FE

v I

C

 

I

(mA) 

 h

F

E

 

-G

a

in

 V

B

E

 

- (

V

olts)

V

CE

=1V

0.1

1

10

0.4

0.2

0

0.8

1.0

0.6

500

0

1500

1000

30

0

0.1

1

10

 C

C

B

 

(p

F

)

V

CB 

(Volts) 

1.2

 C

CB

v V

CB

 

 f

T

v I

C

 

V

CE

=6V

f=100MHz

175°C

100°C

25°C

-55°C

100

0.1

1

10

V

CE

=1V

175°C

100°C

25°C

-55°C

 f

T

 

- (

M

Hz)

I

(mA) 

100

0.1

1

10

I

(mA) 

1.0

0.8

0.6

0.4

0.2

 V

BE(on)

v I

C

 

I

E

=0

f=1MHz

C

B

E

SOT23

3 - 170

3 - 169