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NPN: V

CEO

= 60V, I

C

= 1A, VCE(SAT) = 0.5V @1A

Description:

This 60V NPN transistor provides users with

performance combining low saturation and high h

FE

with a continuous current capability of 1A, ensuring

improved circuit efficiencies.

Features

Low saturation voltage

High h

FE

min 300 @ 250mA

I

C

= 1A

Applications

·

Various driving functions including:-

- Motors

- Actuators

- Soleniod & Relays

·

Backlight Inverters.

·

DC_DC Modules.

FMMT493A

ISSUE 1 - OCTOBER 2001

1

SOT23 60V NPN SILICON PLANAR

MEDIUM POWER PLANAR TRANSISTOR

C

B

E

SOT23

Device

Reel Size

Tape Width

Quantity

(inches)

(mm)

Per Reel

FMMT493ATA

7

8mm embossed

3000 units

FMMT493ATC

13

8mm embossed

10000 units

C

E

B

TOP VIEW

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FMMT493A

ISSUE 1 - OCTOBER 2001

2

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector - Base

Breakdown Voltage

V

(BR)CBO

120

V

I

C

= 100

␮A

Collector - Emitter

Breakdown Voltage

V

CEO(SUS)

60

V

I

C

= 10mA*

Emitter - Base

Breakdown Voltage

V

(BR)EBO

5

V

I

E

= 100

␮A

Collector Cut-Off Current

I

CBO

100

nA

V

CB

= 45V

Collector Cut-Off Current

I

CES

100

nA

V

CES

= 45V

Emitter Cut-Off Current

I

EBO

100

nA

V

EB

= 4V

Collector - Emitter

Saturation Voltage

V

CE(SAT)

0.25

0.5

V

V

I

C

= 500mA, I

B

= 50mA

I

C

= 1A, I

B

= 100mA

Base - Emitter Saturation

Voltage

V

BE(SAT)

1.15

V

I

C

=1A, I

B

= 100mA

Base Emitter Turn On

Voltage

V

BE(ON)

1.0

V

I

C

= 1A, V

CE

- 10V

Static Forward Current

Transfer Ratio

h

FE

300

500

300

100

20

1200

I

C

= 1mA, V

CE

= 10V

I

C

= 150mA, V

CE

= 10V

I

C

= 250mA, V

CE

= 10V

I

C

= 500mA, V

CE

= 10V

I

C

= 1A, V

CE

= 10V

Transition Frequency

f

T

150

Mhz

I

C

= 50mA, V

CE

= 10V

f = 100MHz

Collector - Base

Breakdown Voltage

C

OBO

10

pF

V

CB

= 10V, f = 1MHz

ELECTRICAL CHARACTERISTICS (at Tamb = 25 C).

*Measured under pulsed conditions. Pulse width = 300

␮s. Duty Cycle <2%

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FMMT493A

ISSUE 1 - OCTOBER 2001

3

1m

10m

100m

1

1

0m

100m

1m

10m

100m

1

0.05

0.10

0.15

0.20

0.25

0.30

0.35

0.40

1m

10m

100m

1

0.0

0.2

0.4

0.6

0.8

1.0

1.2

1m

10m

100m

1

0.2

0.4

0.6

0.8

1.0

1m

10m

100m

1

0.2

0.4

0.6

0.8

1.0

0

200

400

600

800

1000

1200

1400

V

CE(SAT)

v I

C

Tamb=25°C

I

C

/I

B

=100

I

C

/I

B

=50

I

C

/I

B

=10

V

CE(SAT)

(V)

I

C

Collector Current (A)

V

BE(SAT)

v I

C

I

C

/I

B

=50

100°C

25°C

-55°C

V

CE(SAT)

(V)

I

C

Collector Current (A)

h

FE

v I

C

V

CE

=10V

-55°C

25°C

100°C

Normalised

Gain

I

C

Collector Current (A)

25°C

V

CE(SAT)

v I

C

I

C

/I

B

=50

100°C

-55°C

V

BE

(

SAT

)

(V)

I

C

Collector Current (A)

V

BE(ON)

v I

C

V

CE

=10V

100°C

25°C

-55°C

V

BE(ON)

(V)

I

C

Collector Current (A)

Typical

Gain

(h

FE

)

ELECTRICAL CHARACTERICS

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FMMT493A

ISSUE 1 - OCTOBER 2001

4

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

120

V

Collector-Emitter Voltage

V

CEO

60

V

Emitter-Base Voltage

V

EBO

5

V

Continuous Collector Current

I

C

1

A

Peak Pulse Current

I

CM

2

A

Base Current

I

B

200

mA

Power Dissipation at T

amb

=25°C

P

tot

500

mW

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Junction to Ambient (a)

R

␪JA

250

ЊC/W

Mounted on a 15mm x 15mm x 0.6mm alumina substrate connected using 25mm x 0.5 dia copper wire.

THERMAL RESISTANCE

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FMMT493A

ISSUE 1 - OCTOBER 2001

5

100m

1

10

100

10m

100m

1

Single Pulse T

amb

=25°C

100µs

1ms

10ms

100ms

1s

DC

Safe Operating Area

I

C

Collector

Current

(A)

V

CE

Collector-Emitter Voltage (V)

0

20

40

60

80

100

120

140

160

0.0

0.1

0.2

0.3

0.4

0.5

0.6

Derating Curve

Temperature (°C)

Max

Power

Dissipati

on

(W)

100µ

1m

10m

100m

1

10

100

1k

0

50

100

150

200

250

Transient Thermal Impedance

D=0.5

D=0.2

D=0.1

Single Pulse

D=0.05

Thermal

Resistance

(°C/W)

Pulse Width (s)

THERMAL CHARACTERISTICS

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ISSUE 1 - OCTOBER 2001

Zetex plc

Fields New Road

Chadderton

Oldham, OL9 8NP

United Kingdom

Telephone (44) 161 622 4422

Fax: (44) 161 622 4420

Zetex GmbH

Streitfeldstraße 19

D-81673 München

Germany

Telefon: (49) 89 45 49 49 0

Fax: (49) 89 45 49 49 49

Zetex Inc

700 Veterans Memorial Hwy

Hauppauge, NY11788

USA

Telephone: (631) 360 2222

Fax: (631) 360 8222

Zetex (Asia) Ltd

3701-04 Metroplaza, Tower 1

Hing Fong Road

Kwai Fong, Hong Kong

China

Telephone: (852) 26100 611

Fax: (852) 24250 494

These offices are supported by agents and distributors in major countries world-wide.

This publication is issued to provide outline information only which (unless agreed by the Company in writing) may not be used, applied or

reproduced for any purpose or form part of any order or contract or be regarded as a representation relating to the products or services

concerned. The Company reserves the right to alter without notice the specification, design, price or conditions of supply of any product or

service.

For the latest product information, log on to

www.zetex.com

© Zetex plc 2001

6

FMMT493A

N

PACKAGE DIMENSIONS

PAD LAYOUT DETAILS

DIM

Millimetres

Inches

Min

Max

Min

Max

A

2.67

3.05

0.105

0.120

B

1.20

1.40

0.047

0.055

C

1.10

0.043

D

0.37

0.53

0.0145

0.021

F

0.085

0.15

0.0033

0.0059

G

NOM 1.9

NOM 0.075

K

0.01

0.10

0.0004

0.004

L

2.10

2.50

0.0825

0.0985

N

NOM

0.95

NOM

0.037