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SOT89 NPN SILICON POWER

(SWITCHING) TRANSISTOR

ISSSUE 1 - NOVEMBER 1998

FEATURES

*

2W POWER DISSIPATION

*

12A Peak Pulse Current

*

Excellent H

FE 

Characteristics up to 12 Amps 

*

Extremely Low Saturation Voltage E.g. 8mv Typ.

*

Extremely Low Equivalent On-resistance; 

 

R

CE(sat) 

50m

Ω 

at 3A

Partmarking Detail -

617

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

15

V

Collector-Emitter Voltage

V

CEO

15

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current **

I

CM

12

A

Continuous Collector Current

I

C

3

A

Base Current

I

B

500

mA

Power Dissipation at T

amb

=25°C

P

tot

1 †

2 ‡

W

W

Operating and Storage Temperature Range

T

j

:T

stg

-55 to +150

°C

recommended P

tot

 calculated using FR4 measuring 15x15x0.6mm

Maximum power dissipation is calculated assuming that the device is mounted on FR4

 

substrate measuring 40x40x0.6mm and using comparable measurement methods adopted by

other suppliers.

**Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle 

 2%

Spice parameter data is available upon request for these devices

Refer to the handling instructions for soldering surface mount components.

C

B

C

E

FCX617

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ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

TYP.

MAX.

UNIT

CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

15

V

I

C

=100

µ

A

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

15

V

I

C

=10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

5

V

I

E

=100

µ

A

Collector Cut-Off

Current

I

CBO

0.3

100

nA

V

CB

=10V

Emitter Cut-Off

Current

I

EBO

0.3

100

nA

V

EB

=4V

Collector Emitter

Cut-Off Current

I

CES

0.3

100

nA

V

CES

=10V

Collector-Emitter

Saturation Voltage

V

CE(sat)

    8

  70

150

  14

100

230

300

400

mV

mV

mV

mV

mV

I

C

=0.1A, I

B

=10mA*

I

C

=1A, I

B

=10mA*

I

C

=3A, I

B

=50mA*

I

C

=4A, I

B

=50mA*

I

C

=5A, I

B

=50mA*

Base-Emitter 

Saturation Voltage

V

BE(sat)

0.89

1.0

V

I

C

=3A, I

B

=50mA*

Base-Emitter Turn-On

Voltage

V

BE(on)

0.82

1.0

V

I

C

=3A, V

CE

=2V*

Static Forward

Current Transfer 

Ratio

h

FE

200

300

200

150

415

450

320

240

80

I

C

=10mA, V

CE

=2V*

I

C

=200mA, V

CE

=2V*

I

C

=3A, V

CE

=2V*

I

C

=5A, V

CE

=2V*

I

C

=12A, V

CE

=2V*

Transition 

Frequency

f

T

80

120

MHz

I

C

=50mA, V

CE

=10V

f=50MHz

Output Capacitance

C

obo

30

40

pF

V

CB

=10V, f=1MHz

Turn-On Time

t

(on)

120

ns

V

CC

=10V, I

C

=3A

I

B1

=I

B2

=50mA

Turn-Off Time

t

(off)

160

ns

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle 

 2%

FCX617

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FCX617

100°C

-55°C

25°C

0.0

0.2

0.4

0.6

0.8

1.0

1.2

Collector Current 

I

C

/I

B

=60

Collector Current 

    

Collector Current 

Collector Current 

25°C

100°C

-55°C

I

C

/I

B

=60

0.0

0.2

0.4

0.6

0.8

1.0

1.2

0

450

225

25°C

100°C

-55°C

V

CE

=2V

0.2

0.0

1.0

0.8

0.6

0.4

V

CE

(VOLTS)

Safe Operating Area

TYPICAL CHARACTERISTICS

1mA

10mA

100mA

1A

10A

10A

1A

100mA

10mA

1mA

100A

1.4

1mA

10mA

100mA

1A

10A

100A

1.2

1mA

10mA

100A

100mA

1A

10A

0.4

0.3

0.2

0.1

0.0

V

CE

=2V

100°C

25°C

-55°C

1.4

1m

100m

10

I

C

- Collector Current (A)

V

CE(SAT)

v I

C

1m

1

I

C

/I

B

=100

I

C

/I

B

=60

I

C

/I

B

=10

+25 °C

10m

100m

10m

1

V

CE(SAT)

vs I

C

V

BE(SAT)

vs I

C

h

FE

vs I

C

V

BE(ON)

vs I

C

10A

100m

10

100

1s

100ms

100

10

DC

0.1

10ms

1ms

100us

1

1