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SOT89 PNP SILICON PLANAR   

HIGH VOLTAGE TRANSISTOR

ISSUE 3 – MARCH 1996

FEATURES

*

400 Volt V

CEO

*

P

tot

= 1 Watt

COMPLEMENTARY TYPE – 

FCX458

PARTMARKING DETAIL – 

P58

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

-400

V

Collector-Emitter Voltage

V

CEO

-400

V

Emitter-Base Voltage

V

EBO

-5

V

Continuous Collector Current

I

C

-200

mA

Peak Pulse Current

I

CM

-500

mA

Power Dissipation at T

amb

=25°C

P

tot

1

W

Operating and Storage Temperature Range

T

j

:T

stg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base  

Breakdown Voltage

V

(BR)CBO

-400

V

I

C

=-100

µ

A

Collector-Emitter 

Breakdown Voltage

V

(BR)CEO

-400

V

I

C

=-10mA*

Emitter-Base  

Breakdown Voltage

V

(BR)EBO

-5

V

I

E

=-100

µ

A

Collector Cut-Off Current

I

CBO

 ;I

CES

-100

nA

V

CB

=-320V; V

CES

 = 320V

Emitter Cut-Off Current

I

EBO

-100

nA

V

EB

=-4V

Collector-Emitter 

Saturation Voltage

V

CE(sat)

-0.2

-0.5

V

V

I

C

=-20mA, I

B

=-2mA*

I

C

=-50mA, I

B

=-6mA*

Base-Emitter 

Saturation Voltage

V

BE(sat)

-0.9

V

I

C

=-50mA, I

B

=-5mA*

Base-Emitter 

Turn On Voltage

V

BE(on)

-0.9

V

I

C

=-50mA, V

CE

=-10V*

Static Forward Current

Transfer Ratio

h

FE

100

100

15

300

I

C

=-1mA, V

CE

=-10V

I

C

=-50mA, V

CE

=-10V*

I

C

=-100mA, V

CE

=-10V*

Transition Frequency

f

T

50

MHz

I

C

=-10mA, V

CE

=-20V

f=20MHz

Collector-Base  

Breakdown Voltage

C

obo

5

pF

V

CB

=-20V, f=1MHz

Switching times

t

on

t

off

95 Typical

1600 Typical

ns

ns

I

C

=-50mA, V

C

=-100V

I

B1

=-5mA, I

B2

=-10mA

*Measured under pulsed conditions. Pulse width=300

µ

s. Duty cycle 

≤ 

2%

Spice parameter data is available upon request for this device

For typical characteristics graphs see FZT558 datasheet.

3 - 90

FCX558

C

C

B

E