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SOT89 NPN SILICON PLANAR

MEDIUM POWER TRANSISTOR

ISSUE 3 – FEBRUARY 1996

COMPLEMENTARY TYPE  – 

BSR32

PARTMARKING DETAIL – 

AR3

ABSOLUTE MAXIMUM RATINGS.

PARAMETER

SYMBOL

VALUE

UNIT

Collector-Base Voltage

V

CBO

90

V

Collector-Emitter Voltage

V

CEO

80

V

Emitter-Base Voltage

V

EBO

5

V

Peak Pulse Current

I

CM

2

A

Continuous Collector Current

I

C

1

A

Base Current

I

B

100

mA

Power Dissipation at T

amb 

=25°C

P

tot

1

W

Operating and Storage Temperature Range

T

j

:T

stg

-65 to +150

°C

ELECTRICAL CHARACTERISTICS (at T

amb

 = 25°C unless otherwise stated).

PARAMETER

SYMBOL

MIN.

MAX.

UNIT

CONDITIONS.

Collector-Base 

Breakdown Voltage

V

(BR)CBO

90

V

I

C

=100

µ

A

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

80

V

I

C

=10mA

Emitter-Base  

Breakdown Voltage

V

(BR)EBO

5

V

I

E

=10

µ

A

Collector Cut-Off 

Current

I

CBO

100

50

nA

µ

A

V

CB

=60V

V

CB

=60V, T

amb

=125°C

Collector-Emitter 

Saturation Voltage

V

CE(sat)

0.25

0.5

V

V

I

C

 =150mA, I

B

=15mA

I

C

 =500mA, I

B

=50mA

Base-Emitter  

Saturation Voltage

V

BE(sat)

1.0

1.2

V

V

I

=150mA, I

B

=15mA

I

C

 =500mA, I

B

=50mA

Static Forward 

Current Transfer Ratio 

h

FE

10

40

30

120

I

=100

µ

A, V

CE

=5V

I

C

 =100mA, V

CE

=5V

I

C

 =500mA, V

CE

=5V 

Output Capacitance

C

obo

12

pF

V

CB

 =10V, f =1MHz

Input Capacitance

C

ibo

90

pF

V

EB

 =0.5V, f=1MHz

Transition Frequency

f

T

100

MHz

I

C

=50mA, V

CE

=10V

f =35MHz

Turn-On Time

T

on

250

ns

V

CC

 =20V, I

C

 =100mA

I

B1

 =-I

B2

 =-5mA

Turn-Off Time

T

off

1000

ns

*Measured under pulsed conditions. 

For typical characteristics graphs see FMMT493 datasheet.

BSR42

C

C

B

E

TBA