background image

LM236-2.5, LM336-2.5

2.5-V INTEGRATED REFERENCE CIRCUITS

 

 

SLVS063B – NOVEMBER 1988 – REVISED JULY 1999

1

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

D

Low Temperature Coefficient

D

Wide Operating Current . . . 400 

µ

A

to 10 mA

D

0.27-

 Dynamic Impedance

D

±

1% Tolerance Available

D

Specified Temperature Stability

D

Easily Trimmed for Minimum Temperature

Drift

D

Fast Turnon

D

Three-Lead Transistor Package

     

description

The LM236-2.5 and LM336-2.5 integrated

circuits are precision 2.5-V shunt regulator

diodes. These monolithic references operate as

low-temperature-coefficient 2.5-V zeners with a

0.2-

 dynamic impedance. A third terminal

provided on the circuit allows the reference

voltage and temperature coefficient to be easily

trimmed.

The series is useful as precision 2.5-V low-voltage

references (V

Z

) for digital voltmeters, power

supplies, or operational-amplifier circuitry. The 2.5-V voltage reference makes it convenient to obtain a stable

reference from 5-V logic supplies. Devices in this series operate as shunt regulators, and can be used as either

positive or negative voltage references.

The LM236-2.5 is characterized for operation from –25

°

C to 85

°

C. The LM336-2.5 is characterized for operation

from 0

°

C to 70

°

C.

AVAILABLE OPTIONS

PACKAGED DEVICES

CHIP FORM

TA

SMALL OUTLINE

PLASTIC

CHIP FORM

(Y)

(D)

(LP)

(Y)

0

°

C to 70

°

C

LM336D-2.5

LM336LP-2.5

LM336Y-2.5

–25

°

C to 85

°

C

LM236D-2.5

LM236LP-2.5

The D package is available taped and reeled. Add the suffix R to the device type (i.e.,

LM336DR-2.5). Chip forms are tested at 25

°

C.

Copyright 

©

 1999, Texas Instruments Incorporated

PRODUCTION DATA information is current as of publication date.

Products conform to specifications per the terms of Texas Instruments

standard warranty. Production processing does not necessarily include

testing of all parameters.

1

2

3

4

8

7

6

5

NC

NC

NC

ANODE

CATHODE

NC

NC

ADJ

D PACKAGE

(TOP VIEW)

LP PACKAGE

(TOP VIEW)

ANODE

CATHODE

ADJ

CATHODE

ANODE

ADJ

NC-No internal connection

symbol

Please be aware that an important notice concerning availability, standard warranty, and use in critical applications of

Texas Instruments semiconductor products and disclaimers thereto appears at the end of this data sheet.

background image

LM236-2.5, LM336-2.5

2.5-V INTEGRATED REFERENCE CIRCUITS

 

 

SLVS063B – NOVEMBER 1988 – REVISED JULY 1999

2

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

schematic diagram

CATHODE

Q11

6.6 k

24

k

24

k

Q14

Q8

Q7

Q2

20 pF

10 k

30 pF

Q10

Q3

Q1

Q5

Q4

Q6

Q9

Q12

Q13

500 

30 k

6.6 k

720 

ADJ

ANODE

All component values are nominal

absolute maximum ratings over operating free-air temperature range (unless otherwise noted)

Reverse current, I

R

 

20 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Forward current, I

F

 

10 mA

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

Package thermal impedance, 

θ

JA

 (see Notes 1 and 2): D package

97

°

C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . . . 

LP package

156

°

C/W

. . . . . . . . . . . . . . . . . . . . . . . . . . 

Lead temperature 1,6 mm (1/16 inch) from case for 10 seconds: D or LP package 

260

°

C

. . . . . . . . . . . . . . . 

Storage temperature range, T

stg

  – 65

°

C to 150

°

C

. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 

† Stresses beyond those listed under “absolute maximum ratings” may cause permanent damage to the device. These are stress ratings only, and

functional operation of the device at these or any other conditions beyond those indicated under “recommended operating conditions” is not

implied. Exposure to absolute-maximum-rated conditions for extended periods may affect device reliability.

NOTES:

1. Maximum power dissipation is a function of TJ(max), 

θ

JA, and TA. The maximum allowable power dissipation at any allowable

ambient temperature is PD = (TJ(max) – TA)/

θ

JA. Operating at the absolute maximum TJ of 150

°

C can impact reliability.

2. The package thermal impedance is calculated in accordance with JESD 51, except for through-hole packages, which use a trace

length of zero.

recommended operating conditions

MIN

MAX

UNIT

Operating free air temperature TA

LM236-2.5

–25

85

°

C

Operating free-air temperature, TA

LM336-2.5

0

70

°

C

background image

LM236-2.5, LM336-2.5

2.5-V INTEGRATED REFERENCE CIRCUITS

 

 

SLVS063B – NOVEMBER 1988 – REVISED JULY 1999

3

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

electrical characteristics at specified free-air temperature (unless otherwise noted)

PARAMETER

TEST CONDITIONS

TA†

LM236-2.5

LM336-2.5

UNIT

PARAMETER

TEST CONDITIONS

TA†

MIN

TYP

MAX

MIN

TYP

MAX

UNIT

VZ

Reference voltage

IZ = 1 mA

LM236, LM336

25

°

C

2.44

2.49

2.54

2.39

2.49

2.59

V

VZ

Reference voltage

IZ = 1 mA

LM236A, LM336B

25

°

C

2.465

2.49

2.515

2.44

2.49

2.54

V

VZ(

T)

Change in reference

voltage with

temperature

VZ adjusted to 2.490 V,

IZ = 1 mA

Full range

3.5

9

1.8

6

mV

VZ(

I)

Change in reference

IZ = 400

µ

A to 10 mA

25

°

C

2.6

6

2.6

10

mV

VZ(

I)

g

voltage with current

IZ = 400 

µ

A to 10 mA

Full range

3

10

3

12

mV

VZ(

t)

Long-term change

in reference voltage

IZ = 1 mA

25

°

C

20

20

ppm/khr

z

Reference

IZ = 1 mA

f = 1 kHz

25

°

C

0.2

0.6

0.2

1

zz

impedance

IZ = 1 mA,

f = 1 kHz

Full range

0.4

1

0.4

1.4

† Full range is –25

°

C to 85

°

C for the LM236-2.5 and 0

°

C to 70

°

C for the LM336-2.5.

electrical characteristics, T

A

 = 25

°

C

PARAMETER

TEST CONDITIONS

LM336Y-2.5

UNIT

PARAMETER

TEST CONDITIONS

MIN

TYP

MAX

UNIT

VZ

Reference voltage

IZ = 1 mA

2.39

2.49

2.59

V

VZ(

I)

Change in reference voltage with current

IZ = 400 

µ

A to 10 mA

2.6

10

mV

VZ(

t)

Long-term change in reference voltage

IZ = 1 mA

20

ppm/khr

zz

Reference impedance

IZ = 1 mA, f = 1 kHz

0.2

1

background image

LM236-2.5, LM336-2.5

2.5-V INTEGRATED REFERENCE CIRCUITS

 

 

SLVS063B – NOVEMBER 1988 – REVISED JULY 1999

4

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

TYPICAL CHARACTERISTICS

Figure 1

V    – Change in Reference V

oltage – mV

Z

1.5

1

0.5

0

0

2

4

6

2

CHANGE IN REFERENCE VOLTAGE

vs

REFERENCE CURRENT

2.5

8

10

IZ – Reference Current – mA

TA = 25

°

C

Figure 2

150

100

50

10

100

1 k

200

f – Frequency – Hz

NOISE VOLTAGE

vs

FREQUENCY

250

10 k

100 k

IZ = 1 mA

TA = 25

°

C

– Noise V

oltage 

V

n

nV/

Hz

0.01

0.1

1

f – Frequency – kHz

10

100

REFERENCE IMPEDANCE

vs

FREQUENCY

10

1

0.1

100

IZ = 1 mA

TA = – 55

°

C to 125

°

C

z

z

– Reference Impedance –

Figure 3

background image

LM236-2.5, LM336-2.5

2.5-V INTEGRATED REFERENCE CIRCUITS

 

 

SLVS063B – NOVEMBER 1988 – REVISED JULY 1999

5

POST OFFICE BOX 655303 

 DALLAS, TEXAS 75265

APPLICATION INFORMATION

2.49 k

2.5 V

LM236-2.5

5 V

NC

Figure 4. 2.5-V Reference

2.49 k

LM236-2.5

IN457 †

IN457 †

10 k

5 V

† Any silicon signal diode

‡ Adjust to 2.49 V

2.5 V

Figure 5. 2.5-V Reference With Minimum

Temperature Coefficient

LM334

V+

V–

VI = 3.5 – 40 V

68.1 

VO = 2.5 V

LM336-2.5

R

NC

Figure 6. Wide-Input-Range Reference

background image

IMPORTANT NOTICE

Texas Instruments and its subsidiaries (TI) reserve the right to make changes to their products or to discontinue

any product or service without notice, and advise customers to obtain the latest version of relevant information

to verify, before placing orders, that information being relied on is current and complete. All products are sold

subject to the terms and conditions of sale supplied at the time of order acknowledgement, including those

pertaining to warranty, patent infringement, and limitation of liability.

TI warrants performance of its semiconductor products to the specifications applicable at the time of sale in

accordance with TI’s standard warranty. Testing and other quality control techniques are utilized to the extent

TI deems necessary to support this warranty. Specific testing of all parameters of each device is not necessarily

performed, except those mandated by government requirements.

CERTAIN APPLICATIONS USING SEMICONDUCTOR PRODUCTS MAY INVOLVE POTENTIAL RISKS OF

DEATH, PERSONAL INJURY, OR SEVERE PROPERTY OR ENVIRONMENTAL DAMAGE (“CRITICAL

APPLICATIONS”). TI SEMICONDUCTOR PRODUCTS ARE NOT DESIGNED, AUTHORIZED, OR

WARRANTED TO BE SUITABLE FOR USE IN LIFE-SUPPORT DEVICES OR SYSTEMS OR OTHER

CRITICAL APPLICATIONS. INCLUSION OF TI PRODUCTS IN SUCH APPLICATIONS IS UNDERSTOOD TO

BE FULLY AT THE CUSTOMER’S RISK.

In order to minimize risks associated with the customer’s applications, adequate design and operating

safeguards must be provided by the customer to minimize inherent or procedural hazards.

TI assumes no liability for applications assistance or customer product design. TI does not warrant or represent

that any license, either express or implied, is granted under any patent right, copyright, mask work right, or other

intellectual property right of TI covering or relating to any combination, machine, or process in which such

semiconductor products or services might be or are used. TI’s publication of information regarding any third

party’s products or services does not constitute TI’s approval, warranty or endorsement thereof.

Copyright 

©

 1999, Texas Instruments Incorporated