background image

1SS286

Silicon Schottky Barrier Diode for Various Detector,

High Speed Switching

ADE-208-302A (Z)

Rev. 1

Sep. 1995

Features

 

Very low reverse current.

 

Detection efficiency is very good.

 

Small glass package (MHD) enables easy mounting and high reliability.

Ordering Information

Type No.

Cathode band

Mark

Package Code

1SS286

Green

7

MHD

Outline

1

2

Cathode band

1. Cathode

2. Anode

7

background image

1SS286

Rev.1, Sep. 1995, page 2 of 6

Absolute Maximum Ratings

(Ta = 25°C)

Item

Symbol

Value

Unit

Reverse voltage

V

R

25

V

Forward current

I

F

35

mA

Power dissipation

Pd

150

mW

Junction temperature

Tj

100

°C

Storage temperature

Tstg

–55 to +100

°C

Electrical Characteristics

(Ta = 25°C)

Item

Symbol

Min

Typ

Max

Unit

Test Condition

Forward voltage

V

F

0.6

V

I

F

 = 10mA

Reverse voltage

V

R

25

V

I

R

 = 10µA

Reverse current

I

R

10

nA

V

R

= 10V

Capacitance

C

1.2

pF

V

R

 = 0V, f = 1MHz

Capacitance deviation

C

0.1

pF

V

R

 = 0V, f = 1MHz

Forward voltage

deviation

V

F

10

mV

I

F

 = 10mA

ESD-Capability

10

V

*

1

C = 200pF, Both forward and

reverse direction 1 pulse.

Notes: 1. Failure criterion; I

R

 

 20µA

2. Each group shall unify a multiple of 4 diodes

background image

1SS286

Rev.1, Sep. 1995, page 3 of 6

10

–4

Forward voltage  V    (V)

F

Forward current  I    (A)

F

10

–5

10

10

10

–2

–6

–3

10

–7

10

–8

10

–9

0

0.2

0.4

0.6

0.8

1.0

10

–1

Fig.1   Forward current Vs. Forward voltage

Reverse voltage  V   (V)

R

0

5

10

10

–7

10

–6

Reverse current  I    (A)

R

–8

25

20

10

–9

10

–10

15

10

Fig.2   Reverse current Vs. Reverse voltage

background image

1SS286

Rev.1, Sep. 1995, page 4 of 6

Reverse voltage  V   (V)

R

10

Capacitance  C  (pF)

1.0

40

10

–2

f = 1MHz

10

–1

1.0

Fig.3   Capacitance Vs. Reverse voltage

background image

1SS286

Rev.1, Sep. 1995, page 5 of 6

Package Dimensions

26.0 Min

2.4 Max

2.0

Max

0.4

φ

φ

26.0 Min

Cathode band (Green)

1

2

7

HITACHI Code

JEDEC Code

EIAJ Code

Weight (g)

MHD

DO-34

0.084

1

2

Cathode

Anode

Unit: mm

background image

1SS286

Rev.1, Sep. 1995, page 6 of 6

Disclaimer

1. Hitachi neither warrants nor grants licenses of any rights of Hitachi’s or any third party’s patent,

copyright, trademark, or other intellectual property rights for information contained in this document.

Hitachi bears no responsibility for problems that may arise with third party’s rights, including

intellectual property rights, in connection with use of the information contained in this document.

2. Products and product specifications may be subject to change without notice. Confirm that you have

received the latest product standards or specifications before final design, purchase or use.

3. Hitachi makes every attempt to ensure that its products are of high quality and reliability. However,

contact Hitachi’s sales office before using the product in an application that demands especially high

quality and reliability or where its failure or malfunction may directly threaten human life or cause risk

of bodily injury, such as aerospace, aeronautics, nuclear power, combustion control, transportation,

traffic, safety equipment or medical equipment for life support.

4. Design your application so that the product is used within the ranges guaranteed by Hitachi particularly

for maximum rating, operating supply voltage range, heat radiation characteristics, installation

conditions and other characteristics.  Hitachi bears no responsibility for failure or damage when used

beyond the guaranteed ranges.  Even within the guaranteed ranges, consider normally foreseeable

failure rates or failure modes in semiconductor devices and employ systemic measures such as fail-

safes, so that the equipment incorporating Hitachi product does not cause bodily injury, fire or other

consequential damage due to operation of the Hitachi product.

5. This product is not designed to be radiation resistant.

6. No one is permitted to reproduce or duplicate, in any form, the whole or part of this document without

written approval from Hitachi.

7. Contact Hitachi’s sales office for any questions regarding this document or Hitachi semiconductor

products.

Sales Offices

Hitachi, Ltd.

Semiconductor & Integrated Circuits

Nippon Bldg., 2-6-2, Ohte-machi, Chiyoda-ku, Tokyo 100-0004, Japan

Tel: (03) 3270-2111 Fax: (03) 3270-5109

Copyright © Hitachi, Ltd., 2001. All rights reserved.  Printed in Japan.

Hitachi Asia Ltd.   

Hitachi Tower   

16 Collyer Quay #20-00   

Singapore 049318   

Tel : <65>-538-6533/538-8577 

Fax  : <65>-538-6933/538-3877

URL : http://www.hitachi.com.sg

URL

NorthAmerica  

:  http://semiconductor.hitachi.com/

Europe

:  http://www.hitachi-eu.com/hel/ecg

Asia          

:  http://sicapac.hitachi-asia.com

Japan

:  http://www.hitachi.co.jp/Sicd/indx.htm

Hitachi Asia Ltd.   

(Taipei Branch Office)   

4/F, No. 167, Tun Hwa North Road   

Hung-Kuo Building   

Taipei (105), Taiwan    

Tel : <886>-(2)-2718-3666 

Fax : <886>-(2)-2718-8180 

Telex : 23222 HAS-TP 

URL : http://www.hitachi.com.tw 

Hitachi Asia (Hong Kong) Ltd.   

Group III (Electronic Components)   

7/F., North Tower 

World Finance Centre,   

Harbour City, Canton Road   

Tsim Sha Tsui, Kowloon   

Hong Kong   

Tel  : <852>-(2)-735-9218 

Fax : <852>-(2)-730-0281 

URL : http://semiconductor.hitachi.com.hk 

Hitachi Europe GmbH

Electronic Components Group

Dornacher Straße 3

D-85622 Feldkirchen, Munich

Germany

Tel: <49> (89)  9  9180-0

Fax: <49> (89)  9  29  30  00

Hitachi Europe Ltd.

Electronic Components Group

Whitebrook Park

Lower Cookham Road

Maidenhead

Berkshire  SL6 8YA, United Kingdom

Tel: <44> (1628)  585000

Fax: <44> (1628)  585200

Hitachi Semiconductor 

(America) Inc.

179 East Tasman Drive

San Jose,CA 95134  

Tel: <1> (408)  433-1990

Fax: <1>(408)  433-0223

For further information write to:

Colophon 4.0