background image

Feb.1999

MITSUBISHI SEMICONDUCTOR 

TRIAC

BCR16UM

MEDIUM POWER USE

INSULATED TYPE, GLASS PASSIVATION TYPE

BCR16UM

APPLICATION

Light dimmer

¡

I

T (RMS)

...................................................................... 16A

¡

V

DRM

..............................................................400V/600V

¡

I

FGT 

!

, I

RGT 

!

, I

RGT 

#

........................................... 15mA

¡

V

iso

........................................................................ 1500V

Symbol

V

DRM

V

DSM

Parameter

Repetitive peak off-state voltage

 V

1

Non-repetitive peak off-state voltage

 V

1

Voltage class

Unit

V

V

MAXIMUM RATINGS

8

400

500

12

600

720

V

1. Gate open.

Symbol

I

T (RMS)

I

TSM

I

2t

P

GM

P

G (AV)

V

GM

I

GM

T

j

T

stg

V

iso

Parameter

RMS on-state current

Surge on-state current

I

2t

 for fusing

Peak gate power dissipation

Average gate power dissipation

Peak gate voltage

Peak gate current

Junction temperature

Storage temperature

Weight

Isolation voltage

Conditions

Commercial frequency, sine full wave 360

°

 conduction, T

c

=79

°

C

 V

3

60Hz sinewave 1 full cycle, peak value, non-repetitive

Value corresponding to 1 cycle of half wave 60Hz, surge on-state

current

Typical value

T

a

=25

°

C, AC 1 minute, T

1

 · T

2

 · G terminal to case

Unit

A

A

A

2

s

W

W

V

A

°

C

°

C

g

V

Ratings

16

170

121

5

0.5

10

2

–40 ~ +125

–40 ~ +125

2.3

1500

TYPE

NAME

VOLTAGE

CLASS

V

 Measurement point of 

case temperature

OUTLINE DRAWING

Dimensions

in mm

TO-220

Œ

Œ





Ž

Œ  Ž

Ž

T

1

TERMINAL

T

2

TERMINAL

GATE TERMINAL

V

4.5

2.54

2.54

1.27

0.6

10.2

0.8

1.4

φ

3.8 

±

 0.2

2.6 

±

 0.4

13.0 

MIN

4.2 

MAX

15.5

2.8 

±

 0.2

4.5

background image

Feb.1999

MITSUBISHI SEMICONDUCTOR 

TRIAC

BCR16UM

MEDIUM POWER USE

INSULATED TYPE, GLASS PASSIVATION TYPE

Symbol

I

DRM

V

TM

V

FGT 

!

V

RGT 

!

V

RGT 

#

I

FGT 

!

I

RGT 

!

I

RGT 

#

V

GD

R

th (j-c)

Test conditions

T

j

=125

°

C, V

DRM

 applied

T

c

=25

°

C, I

TM

=25A, Instantaneous measurement

T

j

=25

°

C, V

D

=6V, R

L

=6

, R

G

=330

T

j

=25

°

C, V

D

=6V, R

L

=6

, R

G

=330

T

j

=125

°

C, V

D

=1/2V

DRM

Junction to case

 V

V

4

Unit

mA

V

V

V

V

mA

mA

mA

V

°

C/W

Typ.

Parameter

Repetitive peak off-state current

On-state voltage

Gate trigger voltage

 V

2

Gate trigger current

 V

2

Gate non-trigger voltage

Thermal resistance

!

@

#

!

@

#

ELECTRICAL CHARACTERISTICS

V

2. Measurement using the gate trigger characteristics measurement circuit.

V

3. Case temperature is measured at the T

2

 terminal 1.5mm away from the molded case.

V

4. The contact thermal resistance R

th (c-f)

 in case of greasing is 1.0

°

C/W.

Limits

Min.

0.2

Max.

2.0

1.5

1.5

1.5

1.5

15

15

15

2.5

PERFORMANCE CURVES

10

0

2 3

5 7 10

1

80

60

40

20

2 3

5 7 10

2

4

4

100

120

140

160

180

200

0

4.4

0.4

1.2

2.4

3.2

0.8

1.6 2.0

2.8

3.6 4.0

10

3

7

5

3

2

10

2

7

5

3

2

10

1

7

5

3

2

10

0

T

= 125°C

T

= 25°C

MAXIMUM ON-STATE CHARACTERISTICS

ON-STATE CURRENT  (A)

ON-STATE VOLTAGE  (V)

RATED SURGE ON-STATE CURRENT

SURGE ON-STATE CURRENT  (A)

CONDUCTION TIME

(CYCLES AT 60Hz)

background image

Feb.1999

MITSUBISHI SEMICONDUCTOR 

TRIAC

BCR16UM

MEDIUM POWER USE

INSULATED TYPE, GLASS PASSIVATION TYPE

2 3

10

2

5 7 10

3

3.2

0

2 3

10

–1

5 7 10

0

2 3 5 7 10

1

2 3 5 7 10

2

1.6

1.2

0.8

0.4

2.0

2.4

2.8

10

1

10

3

7

5

3

2

–60

–20

20

10

2

7

5

3

2

60

100

140

4

4

–40

0

40

80

120

TYPICAL EXAMPLE

10

1

10

3

7

5

3

2

–60

–20

20

10

2

7

5

3

2

60

100

140

4

4

–40

0

40

80

120

TYPICAL EXAMPLE

10

12

10

8

40

30

25

15

5

0

20

0

20

35

2

4

6

14 16 18

360

°

CONDUCTION

RESISTIVE,

INDUCTIVE

LOADS

40

12

10

8

160

120

100

60

20

0

20

0

80

140

2

4

6

14 16 18

CURVES APPLY REGARDLESS

OF CONDUCTION ANGLE

360

°

CONDUCTION

RESISTIVE,

INDUCTIVE

LOADS

MAXIMUM ON-STATE POWER

DISSIPATION

ON-STATE POWER DISSIPATION  (W)

RMS ON-STATE CURRENT  (A)

ALLOWABLE CASE TEMPERATURE

VS. RMS ON-STATE CURRENT

CASE TEMPERATURE  (

°

C)

RMS ON-STATE CURRENT  (A)

MAXIMUM TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

(JUNCTION TO CASE)

TRANSIENT THERMAL IMPEDANCE  (

°

C/

W)

CONDUCTION TIME

(CYCLES AT 60Hz)

GATE VOLTAGE  (V)

GATE CURRENT  (mA)

GATE TRIGGER CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE  (

°

C)

GATE TRIGGER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE  (

°

C)

GATE CHARACTERISTICS

100 (%)

GATE TRIGGER CURRENT (T

j

 = t

°

C)

GATE TRIGGER CURRENT (T

j

 = 25

°

C)

100 (%)

GATE TRIGGER VOLTAGE 

( T

j

 = t

°

C

)

GATE TRIGGER VOLTAGE 

( T

j

 = 25

°

C

)

10

–1

2 3

10

1

5 7 10

2

2 3 5 7 10

3

2 3 5 7 10

4

10

1

7

5

3

2

10

0

7

5

3

2

7

5

3

2

V

GT

 = 1.5V

P

G(AV)

 = 0.5W

V

GM

 = 10V

P

GM

 = 5W

I

GM

 = 2A

I

FGT I ,  

I

RGT I , 

I

RGT III

V

GD

 = 0.2V

background image

Feb.1999

MITSUBISHI SEMICONDUCTOR 

TRIAC

BCR16UM

MEDIUM POWER USE

INSULATED TYPE, GLASS PASSIVATION TYPE

140

40

–40

–60

–20 0

20

60 80 100 120

10

5

7

5

3

2

10

4

7

5

3

2

10

3

7

5

3

2

10

2

TYPICAL EXAMPLE

LACHING CURRENT VS.

JUNCTION TEMPERATURE

LACHING CURRENT  (mA)

JUNCTION TEMPERATURE  (°C)

ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT

AMBIENT TEMPERATURE  (°C)

RMS ON-STATE CURRENT  (A)

ALLOWABLE AMBIENT TEMPERATURE

VS. RMS ON-STATE CURRENT

AMBIENT TEMPERATURE  (°C)

RMS ON-STATE CURRENT  (A)

REPETITIVE PEAK OFF-STATE

CURRENT VS. JUNCTION

TEMPERATURE

JUNCTION TEMPERATURE  (°C)

BREAKOVER VOLTAGE VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE  (°C)

HOLDING CURRENT VS.

JUNCTION TEMPERATURE

JUNCTION TEMPERATURE  (°C)

10

1

10

3

7

5

3

2

10

2

7

5

3

2

4

4

140

40

–40

–60

–20 0

20

60 80 100 120

TYPICAL EXAMPLE

40

12

10

8

160

120

100

60

20

0

20

0

80

140

2

4

6

14 16 18

60   60   t2.3

120   120   t2.3

100   100   t2.3

NATURAL

CONVECTION

ALL FINS ARE BLACK PAINTED

ALUMINUM AND GREASED

CURVES APPLY REGARDLESS

OF CONDUCTION ANGLE

160

120

100

60

20

0

3.2

1.6

0

0.8 1.2

2.0 2.4 2.8

40

80

140

0.4

NATURAL CONVECTION

NO FINS

CURVES APPLY REGARDLESS

OF CONDUCTION ANGLE

 RESISTIVE, INDUCTIVE LOADS

160

–40

0

40

80

120

10

3

7

5

3

2

10

2

7

5

3

2

10

1

7

5

3

2

10

0

,,,,,,,,,,,

,,,,,,,,,,,

,,,,,,,,,,,

,,,,,,,,,,,

,,,,,,,,,,,

,,,,,,,,,,,

,,,,,,,,,,,

,,,,,,,,,,,

,,,,,,,,,,,

T

2

+

, G

TYPICAL

EXAMPLE

T

2

+

, G

+

T

2

, G

TYPICAL

EXAMPLE

DISTRIBUTION

160

100

80

40

20

0

140

40

–40

–60

–20 0

20

60 80

140

100 120

60

120

TYPICAL EXAMPLE

100 (%)

HOLDING CURRENT 

( T

j

 = t

°C

)

HOLDING CURRENT 

( T

j

 = 25

°C

)

100 (%)

REPETITIVE PEAK OFF-STATE CURRENT 

( T

j

 = t

°C

)

REPETITIVE PEAK OFF-STATE CURRENT 

( T

j

 = 25

°C

)

100 (%)

BREAKOVER VOLTAGE 

( T

j

 = t

°C

)

BREAKOVER VOLTAGE 

( T

j

 = 25

°C

)

background image

Feb.1999

MITSUBISHI SEMICONDUCTOR 

TRIAC

BCR16UM

MEDIUM POWER USE

INSULATED TYPE, GLASS PASSIVATION TYPE

BREAKOVER VOLTAGE VS.

 RATE OF RISE OF

OFF-STATE VOLTAGE

RATE OF RISE OF OFF-STATE VOLTAGE  (V/µs)

100 (%)

BREAKOVER VOLTAGE 

( dv/dt = xV/µs

)

BREAKOVER VOLTAGE 

( dv/dt = 1V/µs

)

GATE TRIGGER CURRENT VS.

GATE CURRENT PULSE WIDTH

GATE CURRENT PULSE WIDTH  (µs)

100 (%)

GATE TRIGGER CURRENT 

( tw

)

GATE TRIGGER CURRENT 

( DC

)

10

1

10

3

7

5

3

2

10

0

2 3

5 7 10

1

10

2

7

5

3

2

2 3

5 7 10

2

4

4

4

4

I

FGT I

I

RGT I

I

RGT III

TYPICAL EXAMPLE

T

j

 = 25°C

2 3

10

1

5 7 10

2

2 3 5 7 10

3

2 3 5 7 10

4

120

0

20

40

60

80

100

140

160

# 2

# 1

TYPICAL EXAMPLE

T

j

 = 125°C

I QUADRANT

III QUADRANT

6

6

6

6V

6V

6V

R

G

R

G

R

G

A

V

A

V

A

V

TEST PROCEDURE 

1

TEST PROCEDURE 

3

TEST PROCEDURE 

2

GATE TRIGGER CHARACTERISTICS TEST CIRCUITS