background image

Feb.1999

¡

V

DSS ................................................................................

450V

¡

r

DS (ON) (MAX) .................................................................

3.5

¡

I

D ............................................................................................

3A

450

±

30

3

9

60

–55 ~ +150

–55 ~ +150

1.2

V

V

A

A

W

°

C

°

C

g

FS3VS-9

V

DSS

V

GSS

I

D

I

DM

P

D

T

ch

T

stg

10.5MAX.

1.3

1.5MAX.

q

w

e

r

4.5

+0.3

 –0

3.0

+0.3 –0.5

1

5

0.8

8.6 ± 0.3

9.8 ± 0.5

1.5MAX.

(1.5)

0.5

4.5

2.6 ± 0.4

w r

q

e

q

 GATE

w

 DRAIN

e

 SOURCE

r

 DRAIN

OUTLINE DRAWING

Dimensions in mm

V

GS

 = 0V

V

DS

 = 0V

Typical value

Symbol

Drain-source voltage

Gate-source voltage

Drain current

Drain current (Pulsed)

Maximum power dissipation

Channel temperature

Storage temperature

Weight

TO-220S

MITSUBISHI Nch POWER MOSFET

FS3VS-9

HIGH-SPEED SWITCHING USE

APPLICATION

SMPS, DC-DC Converter, battery charger, power

supply of printer, copier, HDD, FDD, TV, VCR, per-

sonal computer etc.

MAXIMUM RATINGS 

(Tc = 25

°

C)

Parameter

Conditions

Ratings

Unit

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Feb.1999

100

80

60

40

20

0

200

150

100

50

0

10

1

7

5

3

2

10

0

7

5

3

2

10

–1

7

5

3

2

10

–2

2 3 5 7 10

1

2 3 5 7 10

2

2 3 5 7 10

3

2

T

= 25°C

Single Pulse

tw=10µs

100µs

1ms

10ms

DC

5

4

3

2

1

0

0

4

8

12

16

20

P

D

=60W

T

= 25°C

Pulse Test

V

GS

=20V

10V

8V

6V

5V

10

8

6

4

2

0

0

10

20

30

40

50

P

= 60W

T

= 25°C

Pulse Test

V

GS

=20V

10V

8V

6V

5V

POWER DISSIPATION DERATING CURVE

CASE TEMPERATURE   T

C

 (°C)

POWER DISSIPATION   P

D

 (W)

MAXIMUM SAFE OPERATING AREA

DRAIN-SOURCE VOLTAGE   V

DS

 (V)

DRAIN CURRENT   I

D

 (A)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN CURRENT   I

D

 (A)

DRAIN-SOURCE VOLTAGE   V

DS

 (V)

OUTPUT CHARACTERISTICS

(TYPICAL)

DRAIN CURRENT   I

D

 (A)

DRAIN-SOURCE VOLTAGE   V

DS

 (V)

MITSUBISHI Nch POWER MOSFET

FS3VS-9

HIGH-SPEED SWITCHING USE

I

D

 = 1mA, V

GS

 = 0V

I

G

 = 

±

100

µ

A, V

DS

 = 0V

V

GS

 = 

±

25V, V

DS

 = 0V

V

DS

 = 450V, V

GS

 = 0V

I

D

 = 1mA, V

DS

 = 10V

I

D

 = 1A, V

GS

 = 10V

I

D

 = 1A, V

GS

 = 10V

I

D

 = 1A, V

DS

 = 10V

V

DS

 = 25V, V

GS

 = 0V, f = 1MHz

V

DD

 = 200V, I

D

 = 1A, V

GS

 = 10V, R

GEN

 = R

GS

 = 50

I

S

 = 1A, V

GS

 = 0V

Channel to case

(BR) DSS

(BR) GSS

I

GSS

I

DSS

V

GS (th)

r

DS (ON)

V

DS (ON)

y

fs

C

iss

C

oss

C

rss

t

d (on)

t

r

t

d (off)

t

f

V

SD

R

th (ch-c)

V

V

µ

A

mA

V

V

S

pF

pF

pF

ns

ns

ns

ns

V

°

C/W

450

±

30

2

1.0

3

2.7

2.7

1.5

300

35

6

13

10

30

30

1.5

±

10

1

4

3.5

3.5

2.0

2.08

ELECTRICAL CHARACTERISTICS 

(Tch = 25

°

C)

Drain-source breakdown voltage

Gate-source breakdown voltage

Gate-source leakage current

Drain-source leakage current

Gate-source threshold voltage

Drain-source on-state resistance

Drain-source on-state voltage

Forward transfer admittance

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Source-drain voltage

Thermal resistance

Symbol

Unit

Parameter

Test conditions

Limits

Min.

Typ.

Max.

PERFORMANCE CURVES

background image

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS3VS-9

HIGH-SPEED SWITCHING USE

40

32

24

16

8

0

0

4

8

12

16

20

I

D

=4A

T

C

=25°C

Pulse  Test

3A

2A

1A

0

2 3

10

–2

5 7 10

–1

2 3 5 7 10

0

2 3 5 7 10

1

10

8

6

4

2

T

C

=25°C

Pulse Test

V

GS

=10V

20V

10

8

6

4

2

0

0

4

8

12

16

20

T

C

=25°C

V

DS

=50V

Pulse Test

10

1

7

5

3

2

10

–1

10

–1

2 3

5 7 10

0

10

0

7

5

3

2

2 3

5 7 10

1

T

C

=25°C

V

DS

=10V

Pulse Test

125°C

75°C

2 3 5 7 10

0

10

2

7

5

3

2

10

1

7

5

3

2

7

5

3

2

2 3 5 7 10

1

2 3 5 7 10

2

2

Ciss

Tch=25°C

f=1MHz

V

GS

=0V

Coss

Crss

2 3

5 7 10

0

10

2

7

5

3

2

10

1

7

5

5

3

2

2 3

5 7 10

1

10

–1

Tch = 25°C

V

DD

 = 200V

V

GS

 = 10V

R

GEN

 = R

GS

 = 50

t

f

t

d(off)

t

r

t

d(on)

ON-STATE VOLTAGE VS.

GATE-SOURCE VOLTAGE

(TYPICAL)

GATE-SOURCE VOLTAGE   V

GS

 (V)

DRAIN-SOURCE ON-STATE

VOLTAGE   V

DS (ON)

 (V)

ON-STATE RESISTANCE VS.

DRAIN CURRENT

(TYPICAL)

DRAIN CURRENT   I

D

 (A)

DRAIN-SOURCE ON-STATE

RESISTANCE   r

DS (ON)

 (

)

TRANSFER CHARACTERISTICS

(TYPICAL)

GATE-SOURCE VOLTAGE   V

GS

 (V)

DRAIN CURRENT   I

D

 (A)

FORWARD TRANSFER ADMITTANCE

VS.DRAIN CURRENT

(TYPICAL)

DRAIN CURRENT   I

D

 (A)

FORWARD TRANSFER

ADMITTANCE   

y

fs

 

(S)

SWITCHING CHARACTERISTICS

(TYPICAL)

DRAIN-SOURCE VOLTAGE   V

DS

 (V)

CAPACITANCE VS.

DRAIN-SOURCE VOLTAGE

(TYPICAL)

DRAIN CURRENT   I

D

 (A)

CAPACITANCE

Ciss, Coss, Crss (pF)

SWITCHING TIME   (ns)

background image

Feb.1999

MITSUBISHI Nch POWER MOSFET

FS3VS-9

HIGH-SPEED SWITCHING USE

5.0

4.0

3.0

2.0

1.0

0

–50

0

50

100

150

V

DS

 = 10V

I

D

 = 1mA

1.4

1.2

1.0

0.8

0.6

0.4

–50

0

50

100

150

V

GS

 = 0V

I

D

 = 1mA

20

16

12

8

4

0

0

4

8

12

16

20

V

DS 

= 100V

400V

200V

Tch = 25°C

I

= 3A

10

0

7

5

3

2

10

–1

–50

10

1

7

5

3

2

0

50

100

150

V

GS

 = 10V

I

D

 = 1/2I

D

Pulse Test

10

–4

10

1

7

5

3

2

10

0

7

5

3

2

10

–1

7

5

3

2

2 3 57

2 3 57

2 3 57

2 3 5710

0

2 3 5710

1

2 3 5710

2

10

–3

10

–2

10

–1

10

–2

P

DM

tw

D=  

T

tw

T

D=1

0.5

0.2

0.1

0.05

0.02

0.01

Single Pulse

GATE-SOURCE VOLTAGE

VS.GATE CHARGE

(TYPICAL)

GATE CHARGE   Q

g

 (nC)

GATE-SOURCE VOLTAGE   V

GS

 (V)

SOURCE-DRAIN DIODE

FORWARD CHARACTERISTICS

(TYPICAL)

SOURCE-DRAIN VOLTAGE   V

SD

 (V)

SOURCE CURRENT   I

S

 (A)

CHANNEL TEMPERATURE   Tch (°C)

DRAIN-SOURCE ON-STATE RESISTANCE   r

DS (ON)

 (t°C)

THRESHOLD VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

GATE-SOURCE THRESHOLD

VOLTAGE   V

GS (th)

 (V)

TRANSIENT THERMAL IMPEDANCE

CHARACTERISTICS

CHANNEL TEMPERATURE   Tch (°C)

BREAKDOWN VOLTAGE VS.

CHANNEL TEMPERATURE

(TYPICAL)

PULSE WIDTH   t

w

 (s)

TRANSIENT THERMAL IMPEDANCE   Z

th

 

(c

h–c

)

 (°C/

W)

ON-STATE RESISTANCE VS.

CHANNEL TEMPERATURE

(TYPICAL)

DRAIN-SOURCE ON-STATE RESISTANCE   r

DS (ON)

 (25°C)

CHANNEL TEMPERATURE   Tch (°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE   V

BR (DSS)

 (t°C)

DRAIN-SOURCE BREAKDOWN VOLTAGE   V

BR (DSS)

 (25°C)

10

8

6

4

2

0

0

0.8

1.6

2.4

3.2

4.0

T

C

=125°C

25°C

75°C

V

GS

 = 0V

Pulse Test