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NJG1102F1

- 1 -

LOW NOISE AMPLIFIER GaAs MMIC

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GENERAL DESCRIPTION

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PACKAGE OUTLINE

    NJG1102F1 is a Low Noise Amplifier GaAs MMIC

  designed for 800MHz band cellular phone handsets.

    This amplifier provides low current consumption and

  low noise figure at low supply voltage of 2.5V, low noise

  of 1.5dB and low current consumption of 3mA at supply

  voltage of 2.7V.

    NJG1102F1 includes internal self-bias circuit and input

  DC blocking capacitor with small package of MTP6-1.

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FEATURES

 

l

Low voltage operation 

+2.7V typ.

l

Low current consumption

3mA typ.

l

High small signal gain

17dB typ. @f=820MHz

l

Low noise figure 

1.4dB typ. @f=820MHz

l

High Input IP3

-3dBm typ. @f=820.0+820.1MHz

l

High output IP3

14dBm typ. @f=820.0+820.1MHz

l

Package

MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)

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PIN CONFIGURATION

NJG1102F1

Pin connection

1.LNAOUT

2.NC

3.GND

4.GND

5.GND

6.LNAIN

Note:         is package orientation mark.

F1 TYPE

(Top View)

6

5

4

1

2

3

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NJG1102F1

- 2 -

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ABSOLUTE MAXIMUM RATINGS

                                                                   (T

a

=25°C, Z

s

=Z

l

=50

)

PARAMETER

SYMBOL

CONDITIONS

 RATINGS

UNITS

Drain Voltage

V

DD

5.0

V

Input Power

      P

in

V

DD

=2.7V

+10

dBm

Power Dissipation

P

D

150

mW

Operating Temperature

T

opr

-40~+85

°C

Storage Temperature

T

stg

-55~+125

°C

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ELECTRICAL CHARACTERISTICS

(V

DD

=2.7V,f=820MHz,T

a

=+25°C, Z

s

=Z

l

=50

)

PARAMETER

SYMBOL

CONDITIONS

MIN

TYP

MAX

UNITS

Operating Frequency

freq

800

820

1000

MHz

Drain Voltage

V

DD

2.5

2.7

4.5

V

Operating Current

I

DD

RF OFF

-

3.0

4.0

mA

Small Signal Gain

Gain

15.0

17.0

19.0

dB

Gain Flatness

G

flat

f

RF

=810~885MHz

-

0.5

1.0

dB

Noise Figure

NF

-

1.4

1.6

dB

Pout at 1dB Gain

Compression point

P

-1dB

-3.0

+1.0

-

dBm

Input 3rd Order

Intercept Point

IIP3

f=820.0~820.1MHz

-7.0

-3.0

-

dBm

RFIN Port VSWR

VSWR

i

-

2.0

3.0

RFOUT Port VSWR

VSWR

o

-

2.0

3.0

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NJG1102F1

- 3 -

1

1.2

1.4

1.6

1.8

2

2.2

2.4

2.6

2.8

3

0

2

4

6

8

10

12

14

16

18

20

0.8 0.82 0.84 0.86 0.88 0.9 0.92 0.94 0.96 0.98

1

NF,Gain vs. frequency

NF(dB)

Gain(dB)

frequency(GHz)

Gain

NF

(V

DD

=2.7V,I

DD

=3mA)

14.5

15

15.5

16

16.5

17

17.5

2.5

3

3.5

4

4.5

5

Gain vs. V

DD

Gain(dB)

V

DD

(V)

( f=820MHz )

1.2

1.3

1.4

1.5

1.6

1.7

2.5

2.6

2.7

2.8

2.9

3

2.5

3

3.5

4

4.5

5

NF,I

DD

 vs. V

DD

NF(dB)

I

DD

(mA)

V

DD

(V)

( f=820MHz )

I

DD

NF

-25

-20

-15

-10

-5

0

5

10

15

20

25

-50

-40

-30

-20

-10

0

10

20

30

40

50

0

0.2

0.4

0.6

0.8

1

1.2

1.4

1.6

1.8

2

S21,S11,S22,S12 vs. frequency

S21,S11,S22(dB)

S12(dB)

frequency(GHz)

(V

DD

=2.7V,I

DD

=3mA)

S21

S22

S11

S12

-70

-60

-50

-40

-30

-20

-10

0

10

-40

-35

-30

-25

-20

-15

-10

-5

0

Pin vs. Pout,IM3

Pout,IM3(dBm)

Pin(dBm)

Pout

IM3

(V

DD

=2.7V,I

DD

=3mA,f=820+820.1MHz)

IIP3=-3.5dBm

-30

-25

-20

-15

-10

-5

0

5

10

-40

-35

-30

-25

-20

-15

-10

-5

0

Pin vs. Pout

Pout(dBm)

Pin(dBm)

P-1dB=+0.8dBm

(V

DD

=2.7V,I

DD

=3mA,f=820MHz)

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TYPICAL CHARACTERISTICS

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NJG1102F1

- 4 -

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TYPICAL CHARACTERISTICS

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NJG1102F1

- 5 -

-25

-20

-15

-10

-5

0

5

10

15

20

25

0

2

4

6

8

10

12

14

16

18

20

S21 vs. frequency(~20GHz)

S21(dB)

frequency(GHz)

(V

DD

=2.7V,I

DD

=3mA)

-50

-40

-30

-20

-10

0

10

20

30

40

50

0

2

4

6

8

10

12

14

16

18

20

S12 vs. frequency(~20GHz)

S12(dB)

frequency(GHz)

(V

DD

=2.7V,I

DD

=3mA)

-25

-20

-15

-10

-5

0

5

10

15

20

25

0

2

4

6

8

10

12

14

16

18

20

S11 vs. frequency(~20GHz)

S11(dB)

frequency(GHz)

(V

DD

=2.7V,I

DD

=3mA)

-25

-20

-15

-10

-5

0

5

10

15

20

25

0

2

4

6

8

10

12

14

16

18

20

S22 vs. frequency(~20GHz)

S22(dB)

frequency(GHz)

(V

DD

=2.7V,I

DD

=3mA)

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TYPICAL CHARACTERISTICS

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NJG1102F1

- 6 -

n

TYPICAL CHARACTERISTICS

    Scattering Parameter Table

V

DD

=2.7V, I

DD

=3mA, Z

O

=50

S11

S21

S12

S22

Freq

(GHz)

mag

(units)

ang

(deg)

mag

(units)

ang

(deg)

mag

(units)

ang

(deg)

mag

(units)

ang

(deg)

0.1

1.000

-4.866

1.342

-159.147

0.006

14.420

0.945

-3.745

0.2

1.000

-10.234

1.524

-179.085

0.006

22.117

0.935

-5.657

0.3

1.000

-14.972

1.557

169.103

0.006

29.722

0.927

-7.752

0.4

0.994

-20.871

1.572

158.960

0.007

31.125

0.926

-9.779

0.5

0.976

-24.915

1.564

150.714

0.007

35.066

0.920

-11.953

0.6

0.965

-30.526

1.548

142.447

0.007

41.693

0.915

-14.091

0.7

0.925

-35.290

1.504

134.839

0.007

44.722

0.912

-16.312

0.8

0.912

-40.103

1.499

127.579

0.008

48.888

0.905

-18.499

0.9

0.868

-45.428

1.467

120.278

0.008

53.252

0.906

-20.641

1.0

0.849

-49.349

1.443

113.971

0.008

58.494

0.898

-22.933

1.1

0.813

-54.587

1.408

107.103

0.009

65.663

0.902

-25.089

1.2

0.790

-58.371

1.379

101.107

0.009

71.121

0.896

-27.460

1.3

0.761

-63.046

1.337

95.249

0.010

79.229

0.897

-29.474

1.4

0.739

-66.963

1.322

89.341

0.011

84.816

0.898

-31.516

1.5

0.713

-71.006

1.308

83.704

0.013

90.070

0.895

-33.708

1.6

0.697

-75.141

1.258

78.278

0.015

93.627

0.894

-35.562

1.7

0.669

-78.451

1.233

72.642

0.017

96.762

0.895

-37.942

1.8

0.647

-82.248

1.198

67.296

0.019

98.510

0.889

-39.726

1.9

0.616

-84.912

1.163

61.655

0.022

99.423

0.890

-42.289

2.0

0.592

-87.965

1.132

56.671

0.024

99.437

0.885

-44.339

2.1

0.567

-90.200

1.099

51.306

0.027

99.393

0.883

-46.238

2.2

0.542

-92.166

1.068

46.616

0.030

98.567

0.889

-48.338

2.3

0.523

-93.962

1.041

41.818

0.033

97.417

0.886

-50.652

2.4

0.498

-95.631

1.011

37.218

0.036

96.016

0.889

-52.442

2.5

0.486

-96.784

0.981

32.941

0.040

94.289

0.892

-54.490

2.6

0.466

-97.556

0.958

28.504

0.043

92.819

0.890

-55.710

2.7

0.455

-97.902

0.931

24.687

0.046

90.816

0.892

-57.821

2.8

0.441

-98.495

0.901

20.371

0.050

89.017

0.895

-59.505

2.9

0.429

-98.609

0.877

16.741

0.053

86.927

0.894

-60.952

3.0

0.420

-98.095

0.849

12.899

0.057

84.724

0.899

-62.567

 Note: V

DD

(=2.7V) is supplied through “BIAS CONNECT(PORT2)” of Network Analyzer.

6

5

4

1

2

3

Ref

.

Ref.

S11

S22

Scattering Parameter Measurement Configuration

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NJG1102F1

- 7 -

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RECOMMEND CIRCUIT  (f=810~885MHz)

n

RECOMMENDED PCB DESIGN

  PARTS LIST (f=810~885MHz)

PART ID

PARAMETER

COMMENT

L1

12nH

TAIYO-YUDEN HK1608 Series

L2

15nH

TAIYO-YUDEN HK1608 Series

L3

27nH

TAIYO-YUDEN HK1608 Series

L4

12nH

TAIYO-YUDEN HK1608 Series

C1

3pF

MURATA GRM39 Series

C2

1000pF

MURATA GRM39 Series

L1

L2

2

L3

L4

C1

C2

IN

OUT

V

DD

PCB : FR4, t=0.2mm

MICROSTRIP LINE WIDTH=0.4mm(Zo=50

)

PCB SIZE : 14.0x14.0mm

6

5

4

1

2

3

IN

    Z

O

=50

OUT

Zo=50

V

DD

12nH

15nH

27nH

3pF

12nH

1000pF

(Top View)

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NJG1102F1

- 8 -

n

PACKAGE OUTLINE (MTP6-1)

Lead material

   : Copper

Lead surface finish  : Solder plating

Molding material    : Epoxy resin

UNIT

   : mm

Weight

   :15mg

Cautions on using this product

   This product contains Gallium-Arsenide (GaAs) which is a harmful material.

   

 Do NOT eat or put into mouth.

   

 Do NOT dispose in fire or break up this product.

   

 Do NOT chemically make gas or powder with this product.

   

 To waste this product, please obey the relating law of your country.

This product may be  damaged with electric static discharge (ESD) or spike voltage. Please handle

with care to avoid these damages.

[CAUTION]

The specifications on this databook are only

given for information , without any guarantee

as regards either mistakes or omissions. The

application circuits in this databook are

described only to show representative usages

of the product and not intended for the

guarantee or permission of any right including

the industrial rights.