NJG1102F1
- 1 -
LOW NOISE AMPLIFIER GaAs MMIC
n
GENERAL DESCRIPTION
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PACKAGE OUTLINE
NJG1102F1 is a Low Noise Amplifier GaAs MMIC
designed for 800MHz band cellular phone handsets.
This amplifier provides low current consumption and
low noise figure at low supply voltage of 2.5V, low noise
of 1.5dB and low current consumption of 3mA at supply
voltage of 2.7V.
NJG1102F1 includes internal self-bias circuit and input
DC blocking capacitor with small package of MTP6-1.
n
FEATURES
l
Low voltage operation
+2.7V typ.
l
Low current consumption
3mA typ.
l
High small signal gain
17dB typ. @f=820MHz
l
Low noise figure
1.4dB typ. @f=820MHz
l
High Input IP3
-3dBm typ. @f=820.0+820.1MHz
l
High output IP3
14dBm typ. @f=820.0+820.1MHz
l
Package
MTP6-1 (Mount Size: 2.8 x 2.9 x 1.2mm)
n
PIN CONFIGURATION
NJG1102F1
Pin connection
1.LNAOUT
2.NC
3.GND
4.GND
5.GND
6.LNAIN
Note: is package orientation mark.
F1 TYPE
(Top View)
6
5
4
1
2
3
NJG1102F1
- 2 -
n
ABSOLUTE MAXIMUM RATINGS
(T
a
=25°C, Z
s
=Z
l
=50
Ω
)
PARAMETER
SYMBOL
CONDITIONS
RATINGS
UNITS
Drain Voltage
V
DD
5.0
V
Input Power
P
in
V
DD
=2.7V
+10
dBm
Power Dissipation
P
D
150
mW
Operating Temperature
T
opr
-40~+85
°C
Storage Temperature
T
stg
-55~+125
°C
n
ELECTRICAL CHARACTERISTICS
(V
DD
=2.7V,f=820MHz,T
a
=+25°C, Z
s
=Z
l
=50
Ω
)
PARAMETER
SYMBOL
CONDITIONS
MIN
TYP
MAX
UNITS
Operating Frequency
freq
800
820
1000
MHz
Drain Voltage
V
DD
2.5
2.7
4.5
V
Operating Current
I
DD
RF OFF
-
3.0
4.0
mA
Small Signal Gain
Gain
15.0
17.0
19.0
dB
Gain Flatness
G
flat
f
RF
=810~885MHz
-
0.5
1.0
dB
Noise Figure
NF
-
1.4
1.6
dB
Pout at 1dB Gain
Compression point
P
-1dB
-3.0
+1.0
-
dBm
Input 3rd Order
Intercept Point
IIP3
f=820.0~820.1MHz
-7.0
-3.0
-
dBm
RFIN Port VSWR
VSWR
i
-
2.0
3.0
RFOUT Port VSWR
VSWR
o
-
2.0
3.0
NJG1102F1
- 3 -
1
1.2
1.4
1.6
1.8
2
2.2
2.4
2.6
2.8
3
0
2
4
6
8
10
12
14
16
18
20
0.8 0.82 0.84 0.86 0.88 0.9 0.92 0.94 0.96 0.98
1
NF,Gain vs. frequency
NF(dB)
Gain(dB)
frequency(GHz)
Gain
NF
(V
DD
=2.7V,I
DD
=3mA)
14.5
15
15.5
16
16.5
17
17.5
2.5
3
3.5
4
4.5
5
Gain vs. V
DD
Gain(dB)
V
DD
(V)
( f=820MHz )
1.2
1.3
1.4
1.5
1.6
1.7
2.5
2.6
2.7
2.8
2.9
3
2.5
3
3.5
4
4.5
5
NF,I
DD
vs. V
DD
NF(dB)
I
DD
(mA)
V
DD
(V)
( f=820MHz )
I
DD
NF
-25
-20
-15
-10
-5
0
5
10
15
20
25
-50
-40
-30
-20
-10
0
10
20
30
40
50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
S21,S11,S22,S12 vs. frequency
S21,S11,S22(dB)
S12(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
S21
S22
S11
S12
-70
-60
-50
-40
-30
-20
-10
0
10
-40
-35
-30
-25
-20
-15
-10
-5
0
Pin vs. Pout,IM3
Pout,IM3(dBm)
Pin(dBm)
Pout
IM3
(V
DD
=2.7V,I
DD
=3mA,f=820+820.1MHz)
IIP3=-3.5dBm
-30
-25
-20
-15
-10
-5
0
5
10
-40
-35
-30
-25
-20
-15
-10
-5
0
Pin vs. Pout
Pout(dBm)
Pin(dBm)
P-1dB=+0.8dBm
(V
DD
=2.7V,I
DD
=3mA,f=820MHz)
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TYPICAL CHARACTERISTICS
NJG1102F1
- 5 -
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S21 vs. frequency(~20GHz)
S21(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
-50
-40
-30
-20
-10
0
10
20
30
40
50
0
2
4
6
8
10
12
14
16
18
20
S12 vs. frequency(~20GHz)
S12(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S11 vs. frequency(~20GHz)
S11(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
-25
-20
-15
-10
-5
0
5
10
15
20
25
0
2
4
6
8
10
12
14
16
18
20
S22 vs. frequency(~20GHz)
S22(dB)
frequency(GHz)
(V
DD
=2.7V,I
DD
=3mA)
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TYPICAL CHARACTERISTICS
NJG1102F1
- 6 -
n
TYPICAL CHARACTERISTICS
Scattering Parameter Table
V
DD
=2.7V, I
DD
=3mA, Z
O
=50
Ω
S11
S21
S12
S22
Freq
(GHz)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
mag
(units)
ang
(deg)
0.1
1.000
-4.866
1.342
-159.147
0.006
14.420
0.945
-3.745
0.2
1.000
-10.234
1.524
-179.085
0.006
22.117
0.935
-5.657
0.3
1.000
-14.972
1.557
169.103
0.006
29.722
0.927
-7.752
0.4
0.994
-20.871
1.572
158.960
0.007
31.125
0.926
-9.779
0.5
0.976
-24.915
1.564
150.714
0.007
35.066
0.920
-11.953
0.6
0.965
-30.526
1.548
142.447
0.007
41.693
0.915
-14.091
0.7
0.925
-35.290
1.504
134.839
0.007
44.722
0.912
-16.312
0.8
0.912
-40.103
1.499
127.579
0.008
48.888
0.905
-18.499
0.9
0.868
-45.428
1.467
120.278
0.008
53.252
0.906
-20.641
1.0
0.849
-49.349
1.443
113.971
0.008
58.494
0.898
-22.933
1.1
0.813
-54.587
1.408
107.103
0.009
65.663
0.902
-25.089
1.2
0.790
-58.371
1.379
101.107
0.009
71.121
0.896
-27.460
1.3
0.761
-63.046
1.337
95.249
0.010
79.229
0.897
-29.474
1.4
0.739
-66.963
1.322
89.341
0.011
84.816
0.898
-31.516
1.5
0.713
-71.006
1.308
83.704
0.013
90.070
0.895
-33.708
1.6
0.697
-75.141
1.258
78.278
0.015
93.627
0.894
-35.562
1.7
0.669
-78.451
1.233
72.642
0.017
96.762
0.895
-37.942
1.8
0.647
-82.248
1.198
67.296
0.019
98.510
0.889
-39.726
1.9
0.616
-84.912
1.163
61.655
0.022
99.423
0.890
-42.289
2.0
0.592
-87.965
1.132
56.671
0.024
99.437
0.885
-44.339
2.1
0.567
-90.200
1.099
51.306
0.027
99.393
0.883
-46.238
2.2
0.542
-92.166
1.068
46.616
0.030
98.567
0.889
-48.338
2.3
0.523
-93.962
1.041
41.818
0.033
97.417
0.886
-50.652
2.4
0.498
-95.631
1.011
37.218
0.036
96.016
0.889
-52.442
2.5
0.486
-96.784
0.981
32.941
0.040
94.289
0.892
-54.490
2.6
0.466
-97.556
0.958
28.504
0.043
92.819
0.890
-55.710
2.7
0.455
-97.902
0.931
24.687
0.046
90.816
0.892
-57.821
2.8
0.441
-98.495
0.901
20.371
0.050
89.017
0.895
-59.505
2.9
0.429
-98.609
0.877
16.741
0.053
86.927
0.894
-60.952
3.0
0.420
-98.095
0.849
12.899
0.057
84.724
0.899
-62.567
Note: V
DD
(=2.7V) is supplied through “BIAS CONNECT(PORT2)” of Network Analyzer.
6
5
4
1
2
3
Ref
.
Ref.
S11
S22
Scattering Parameter Measurement Configuration
NJG1102F1
- 7 -
n
RECOMMEND CIRCUIT (f=810~885MHz)
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RECOMMENDED PCB DESIGN
PARTS LIST (f=810~885MHz)
PART ID
PARAMETER
COMMENT
L1
12nH
TAIYO-YUDEN HK1608 Series
L2
15nH
TAIYO-YUDEN HK1608 Series
L3
27nH
TAIYO-YUDEN HK1608 Series
L4
12nH
TAIYO-YUDEN HK1608 Series
C1
3pF
MURATA GRM39 Series
C2
1000pF
MURATA GRM39 Series
L1
L2
2
L3
L4
C1
C2
IN
OUT
V
DD
PCB : FR4, t=0.2mm
MICROSTRIP LINE WIDTH=0.4mm(Zo=50
Ω
)
PCB SIZE : 14.0x14.0mm
6
5
4
1
2
3
IN
Z
O
=50
Ω
OUT
Zo=50
Ω
V
DD
12nH
15nH
27nH
3pF
12nH
1000pF
(Top View)
NJG1102F1
- 8 -
n
PACKAGE OUTLINE (MTP6-1)
Lead material
: Copper
Lead surface finish : Solder plating
Molding material : Epoxy resin
UNIT
: mm
Weight
:15mg
Cautions on using this product
This product contains Gallium-Arsenide (GaAs) which is a harmful material.
•
Do NOT eat or put into mouth.
•
Do NOT dispose in fire or break up this product.
•
Do NOT chemically make gas or powder with this product.
•
To waste this product, please obey the relating law of your country.
This product may be damaged with electric static discharge (ESD) or spike voltage. Please handle
with care to avoid these damages.
[CAUTION]
The specifications on this databook are only
given for information , without any guarantee
as regards either mistakes or omissions. The
application circuits in this databook are
described only to show representative usages
of the product and not intended for the
guarantee or permission of any right including
the industrial rights.
