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e

1

Typical Gain & Return Loss vs. Frequency

(as measured in a broadband circuit)

0

2

4

6

8

10

700

750

800

850

900

950

Frequency (MHz)

G

a

in (dB)

-25

-20

-15

-10

-5

0

Re

turn Los

s

 (dB)

 V

CC

 = 28 V 

 Pin = 9 W

Gain (dB)

Return Loss (dB)

Maximum Ratings

Parameter

Symbol

Value

Unit

Collector-Emitter Voltage

V

CER

40

Vdc

Collector-Base Voltage

V

CBO

50

Vdc

Emitter-Base Voltage (collector open)

V

EBO

4

Vdc

Collector Current (continuous)

I

C

6.7

Adc

Total Device Dissipation at Tflange = 25°C

P

D

65

Watts

     Above 25°C derate by

0.37

W/°C

Storage Temperature Range

T

STG

–40 to +150

°C

Thermal Resistance (Tflange = 70°C)

R

θ

JC

2.7

°C/W

PTB 20155

9 Watts, 610–960 MHz

UHF Power Transistor

Description

The 20155 is an NPN common base RF power transistor intended

for 28 Vdc class C operation from 610 to 960 MHz. Rated at 9 watts

minimum output power, it may be used for both CW and PEP

applications. Ion implantation, nitride surface passivation and gold

metallization are used to ensure excellent device reliability. 100% lot

traceability is standard.

Package 20209

20155

LOT CODE

•

9 Watts, 610–960 MHz

•

Class C Characteristics

•

Gold Metallization

•

Silicon Nitride Passivated

9/28/98

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PTB 20155

2

e

Electrical Characteristics 

(100% Tested)

Characteristic

Conditions

Symbol

Min

Typ

Max

Units

Breakdown Voltage C to E

V

BE

 = 0 V, I

C

 = 5 mA

V

(BR)CES

50

Volts

Breakdown Voltage E to B

I

C

 = 0 A, I

E

 = 5 mA

V

(BR)EBO

3.5

Volts

DC Current Gain

V

CE

 = 5 V, I

C

 = 300 mA

h

FE

25

100

Output Capacitance

V

CB

 = 28 V, I

E

 = 0 A, f = 1 MHz

C

ob

10.5

11

pF

Collector Cut-off Current

V

CB

 = 28 V, I

E

 = 0 A

I

CBO

1.5

mA

RF Specifications 

(100% Tested)

Characteristic

Symbol

Min

Typ

Max

Units

Gain

     (V

CC

 = 28 Vdc, Pout = 9 W, f = 960 MHz)

G

pe

8.0

9.0

dB

Collector Efficiency

     (V

CC

 = 28 Vdc, Pout = 9 W, f = 960 MHz)

η

C

45

53

%

Impedance Data 

(data shown for fixed-tuned broadband circuit)

 (V

CC

 = 28 Vdc, Pout = 9 W)

Frequency

Z Source

Z Load

MHz

R

jX

R

jX

850

4.4

-10.7

8.6

3.6

900

6.4

-10.0

9.3

4.9

960

6.4

-14.3

7.8

3.1

Z Source

Z Load

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PTB 20155

3

e

Gain & Efficiency vs. Power Out

0

2

4

6

8

10

0

2

4

6

8

10

Output Power (Watts)

G

a

in (dB)

10

20

30

40

50

60

Efficiency (%)

 V

CC

 = 28 V 

 f = 960 MHz

Typical Performance

Ericsson Components

RF Power Products

675 Jarvis Drive

Morgan Hill, CA 95037  USA

Telephone: 408-778-9434

Specifications subject to change without notice.

LF

© 1996 Ericsson Inc.

EUS/KR 1301-PTB 20155 Uen Rev. C 09-28-98

1-877-GOLDMOS

(1-877-465-3667)

e-mail: rfpower@ericsson.com

www.ericsson.com/rfpower