background image

DATA  SHEET

Product specification

Supersedes data of 1998 Aug 31

1999 Mar 29

DISCRETE SEMICONDUCTORS

BGD902;  BGD902MI

CATV amplifier modules

book, halfpage

M3D252

background image

1999 Mar 29

2

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

FEATURES

Excellent linearity

Extremely low noise

Excellent return loss properties

Silicon nitride passivation

Rugged construction

Gold metallization ensures excellent reliability.

APPLICATIONS

CATV systems operating in the 40 to 900 MHz

frequency range.

DESCRIPTION

Hybrid amplifier modules in a SOT115J package operating

with a voltage supply of 24 V (DC).

Both modules are electrically identical only the pinning is

different.

PINNING - SOT115J

PIN

DESCRIPTION

BGD902

BGD902MI

1

input

output

2, 3

common

common

5

+V

B

+V

B

7, 8

common

common

9

output

input

Fig.1  Simplified outline.

handbook, halfpage

7

8

9

2

3

5

1

Side view

MSA319

QUICK REFERENCE DATA

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

G

p

power gain

f = 50 MHz

18.2

18.8

dB

f = 900 MHz

19

20

dB

I

tot

total current consumption (DC)

V

B

= 24 V

405

435

mA

SYMBOL

PARAMETER

MIN.

MAX.

UNIT

V

B

supply voltage

30

V

V

i

RF input voltage

70

dBmV

T

stg

storage temperature

40

+100

°

C

T

mb

operating mounting base temperature

20

+100

°

C

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1999 Mar 29

3

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

CHARACTERISTICS

Bandwidth 40 to 900 MHz; V

B

= 24 V; T

mb

= 35

°

C; Z

S

= Z

L

= 75

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

G

p

power gain

f = 50 MHz

18.2

18.5

18.8

dB

f = 900 MHz

19

19.5

20

dB

SL

slope cable equivalent

f = 40 to 900 MHz

0.4

0.9

1.4

dB

FL

flatness of frequency

response

f = 40 to 900 MHz

±

0.15

±

0.3

dB

S

11

input return losses

f = 40 to 80 MHz

21

24

dB

f = 80 to 160 MHz

22

26

dB

f = 160 to 320 MHz

22

28

dB

f = 320 to 640 MHz

19

22

dB

f = 640 to 900 MHz

18

21

dB

S

22

output return losses

f = 40 to 80 MHz

25

32

dB

f = 80 to 160 MHz

25

33

dB

f = 160 to 320 MHz

21

29

dB

f = 320 to 750 MHz

20

25

dB

f = 750 to 900 MHz

19

22

dB

S

21

phase response

f = 50 MHz

45

+45

deg

CTB

composite triple beat

49 chs flat; V

o

= 47 dBmV; f

m

= 859.25 MHz

68.5

67

dB

77 chs flat; V

o

= 44 dBmV; f

m

= 547.25 MHz

70

68

dB

110 chs flat; V

o

= 44 dBmV; f

m

= 745.25 MHz

63.5

62

dB

129 chs flat; V

o

= 44 dBmV; f

m

= 859.25 MHz

60

58

dB

110 chs; f

m

= 400 MHz;

V

o

= 49 dBmV at 550 MHz; note 1

64

62

dB

129 chs; f

m

= 650 MHz;

V

o

= 49.5 dBmV at 860 MHz; note 2

58.5

56.5

dB

X

mod

cross modulation

49 chs flat; V

o

= 47 dBmV; f

m

= 55.25 MHz

66.5

64

dB

77 chs flat; V

o

= 44 dBmV; f

m

= 55.25 MHz

69.5

67

dB

110 chs flat; V

o

= 44 dBmV; f

m

= 55.25 MHz

66

63.5

dB

129 chs flat; V

o

= 44 dBmV; f

m

= 55.25 MHz

64.5

62

dB

110 chs; f

m

= 400 MHz;

V

o

= 49 dBmV at 550 MHz; note 1

63

60

dB

129 chs; f

m

= 860 MHz;

V

o

= 49.5 dBmV at 860 MHz; note 2

61

58

dB

CSO

composite second

order distortion

49 chs flat; V

o

= 47 dBmV; f

m

= 860.5 MHz

65

62

dB

77 chs flat; V

o

= 44 dBmV; f

m

= 548.5 MHz

72

67

dB

110 chs flat; V

o

= 44 dBmV; f

m

= 746.5 MHz

65

60

dB

129 chs flat; V

o

= 44 dBmV; f

m

= 860.5 MHz

61

58

dB

110 chs; f

m

= 250 MHz;

V

o

= 49 dBmV at 550 MHz; note 1

67

63

dB

129 chs; f

m

= 250 MHz;

V

o

= 49.5 dBmV at 860 MHz; note 2

62

58

dB

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1999 Mar 29

4

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

Notes

1. Tilt = 9 dB (50 to 550 MHz); tilt = 3.5 dB at

6 dB offset (550 to 750 MHz).

2. Tilt = 12.5 dB (50 to 860 MHz).

3. f

p

= 55.25 MHz; V

p

= 44 dBmV;

f

q

= 805.25 MHz; V

q

= 44 dBmV;

measured at f

p

+ f

q

= 860.5 MHz.

4. f

p

= 55.25 MHz; V

p

= 44 dBmV;

f

q

= 691.25 MHz; V

q

= 44 dBmV;

measured at f

p

+ f

q

= 746.5 MHz.

5. f

p

= 55.25 MHz; V

p

= 44 dBmV;

f

q

= 493.25 MHz; V

q

= 44 dBmV;

measured at f

p

+ f

q

= 548.5 MHz.

6. Measured according to DIN45004B:

f

p

= 851.25 MHz; V

p

= V

o

;

f

q

= 858.25 MHz; V

q

= V

o

6 dB;

f

r

= 860.25 MHz; V

r

= V

o

6 dB;

measured at f

p

+ f

q

f

r

= 849.25 MHz.

7. Measured according to DIN45004B:

f

p

= 740.25 MHz; V

p

= V

o

;

f

q

= 747.25 MHz; V

q

= V

o

6 dB;

f

r

= 749.25 MHz; V

r

= V

o

6 dB;

measured at f

p

+ f

q

f

r

= 738.25 MHz.

8. Measured according to DIN45004B:

f

p

= 540.25 MHz; V

p

= V

o

;

f

q

= 547.25 MHz; V

q

= V

o

6 dB;

f

r

= 549.25 MHz; V

r

= V

o

6 dB;

measured at f

p

+ f

q

f

r

= 538.25 MHz.

9. The module normally operates at V

B

= 24 V, but is able to withstand supply transients up to 35 V.

d

2

second order distortion

note 3

80

74

dB

note 4

83

77

dB

note 5

84

78

dB

V

o

output voltage

d

im

=

60 dB; note 6

64.5

66

dBmV

d

im

=

60 dB; note 7

65.5

67

dBmV

d

im

=

60 dB; note 8

67.5

69

dBmV

CTB compression = 1 dB; 129 chs flat;

f = 859.25 MHz

48.5

49.5

dBmV

CSO compression = 1 dB; 129 chs flat;

f = 860.5 MHz

50

53

dBmV

F

noise figure

f = 50 MHz

4.5

5

dB

f = 550 MHz

5

5.5

dB

f = 750 MHz

5.5

6.5

dB

f = 900 MHz

6.5

8

dB

I

tot

total current

consumption (DC)

note 9

405

420

435

mA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

background image

1999 Mar 29

5

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

Fig.2

Composite triple beat as function of

frequency under tilted conditions.

Z

S

= Z

L

= 75

; V

B

= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);

tilt = 3.5 dB at

6 dB offset (550 to 750 MHz).

handbook, halfpage

0

f (MHz)

CTB

(dB)

200

1000

50

60

80

90

70

52

48

40

36

44

400

600

800

MDA980

(1)

(1)

(2)

(3)

(4)

(2)

(3)

(4)

Vo

(dBmV)

(1) V

o

.

(2)  Typ. +3

σ

.

(3)  Typ.

(4) Typ.

3

σ

.

Fig.3

Cross modulation as function of frequency

under tilted conditions.

Z

S

= Z

L

= 75

; V

B

= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);

tilt = 3.5 dB at

6 dB offset (550 to 750 MHz).

handbook, halfpage

0

Vo

(dBmV)

f (MHz)

Xmod

(dB)

200

1000

50

60

80

90

70

52

48

40

36

44

400

600

800

MDA981

(1)

(1)

(2)

(3)

(4)

(1) V

o

.

(2)  Typ. +3

σ

.

(3)  Typ.

(4) Typ.

3

σ

.

Fig.4

Composite second order distortion as

function of frequency under tilted conditions.

Z

S

= Z

L

= 75

; V

B

= 24 V; 110 chs; tilt = 9 dB (50 to 550 MHz);

tilt = 3.5 dB at

6 dB offset (550 to 750 MHz).

handbook, halfpage

0

Vo

(dBmV)

f (MHz)

CSO

(dB)

200

1000

50

60

80

90

70

52

48

40

36

44

400

600

800

MDA982

(1)

(2)

(3)

(4)

(2)

(3)

(1)

(4)

(1) V

o

.

(2)  Typ. +3

σ

.

(3)  Typ.

(4) Typ.

3

σ

.

background image

1999 Mar 29

6

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

Fig.5

Composite triple beat as function of

frequency under tilted conditions.

Z

S

= Z

L

= 75

; V

B

= 24 V; 129 chs;

tilt = 12.5 dB; (50 to 860 MHz).

(1) V

o

.

(2)  Typ. +3

σ

.

(3)  Typ.

(4) Typ.

3

σ

.

handbook, halfpage

0

f (MHz)

CTB

(dB)

200

1000

50

60

80

90

70

52

48

40

36

44

400

600

800

MDA942

(1)

(2)

(3)

(4)

Vo

(dBmV)

Fig.6

Cross modulation as function of frequency

under tilted conditions.

Z

S

= Z

L

= 75

; V

B

= 24 V; 129 chs;

tilt = 12.5 dB; (50 to 860 MHz).

(1) V

o

.

(2)  Typ. +3

σ

.

(3)  Typ.

(4) Typ.

3

σ

.

handbook, halfpage

0

Vo

(dBmV)

f (MHz)

Xmod

(dB)

200

1000

50

60

80

90

70

52

48

40

36

44

400

600

800

MDA943

(1)

(2)

(3)

(4)

Fig.7

Composite second order distortion as

function of frequency under tilted conditions.

Z

S

= Z

L

= 75

; V

B

= 24 V; 129 chs;

tilt = 12.5 dB; (50 to 860 MHz).

(1) V

o

.

(2)  Typ. +3

σ

.

(3)  Typ.

(4) Typ.

3

σ

.

handbook, halfpage

0

Vo

(dBmV)

f (MHz)

CSO

(dB)

200

1000

50

60

80

90

70

52

48

40

36

44

400

600

800

MDA944

(1)

(2)

(3)

(4)

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1999 Mar 29

7

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

Fig.8

Composite triple beat as function of output

voltage.

Z

S

= Z

L

= 75

; V

B

= 24 V; 129 chs; f

m

= 859.25 MHz.

(1) Typ. +3

σ

.

(2) Typ.

(3) Typ.

3

σ

.

handbook, halfpage

40

Vo (dBmV)

45

50

55

MDA945

CTB

(dB)

20

30

40

50

60

70

(1)

(2)

(3)

Fig.9

Composite second order distortion as

function of output voltage.

Z

S

= Z

L

= 75

; V

B

= 24 V; 129 chs; f

m

= 860.5 MHz.

(1) Typ. +3

σ

.

(2) Typ.

(3) Typ.

3

σ

.

handbook, halfpage

40

Vo (dBmV)

45

50

55

MDA946

CSO

(dB)

20

30

40

50

60

70

(1)

(2)

(3)

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1999 Mar 29

8

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

PACKAGE OUTLINE

UNIT

A2

max.

c

e

e1

q

Q

max.

q1

q2

U1

max.

U2

W

 REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

 IEC

 JEDEC

 EIAJ

mm

20.8

9.1

0.51

0.38

0.25 27.2 2.54 13.75 2.54 5.08 12.7

8.8

4.15

3.85

2.4

38.1 25.4 10.2

4.2 44.75

8

0.25

0.1

3.8

b

F

p

6-32

UNC

y

w

S

DIMENSIONS (mm are the original dimensions)

 SOT115J

0

5

10 mm

scale

A

max.

D

max.

L

min.

E

max.

Z

max.

Rectangular single-ended package; aluminium flange; 2 vertical mounting holes;

2 x 6-32 UNC and 2 extra horizontal mounting holes; 7 gold-plated in-line leads

SOT115J

D

U1

q

q2

q1

b

F

S

A

Z

p

E

A2

L

c

d

Q

U2

M

w

7

8

9

2

3

W

e

e1

5

p

1

d

max.

y

M

B

y

M

B

B

99-02-06

y

M

B

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1999 Mar 29

9

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

background image

1999 Mar 29

10

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

NOTES

background image

1999 Mar 29

11

Philips Semiconductors

Product specification

CATV amplifier modules

BGD902;  BGD902MI

NOTES

background image

Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1999

 SCA63

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

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under patent- or other industrial or intellectual property rights.

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China/Hong Kong: 501 Hong Kong Industrial Technology Centre,

72 Tat Chee Avenue, Kowloon Tong, HONG KONG,

Tel. +852 2319 7888, Fax. +852 2319 7700

Colombia: see South America

Czech Republic: see Austria

Denmark: Sydhavnsgade 23, 1780 COPENHAGEN V,

Tel. +45 33 29 3333, Fax. +45 33 29 3905

Finland: Sinikalliontie 3, FIN-02630 ESPOO,

Tel. +358 9 615 800, Fax. +358 9 6158 0920

France: 51 Rue Carnot, BP317, 92156 SURESNES Cedex,

Tel. +33 1 4099 6161, Fax. +33 1 4099 6427

Germany: Hammerbrookstraße 69, D-20097 HAMBURG,

Tel. +49 40 2353 60, Fax. +49 40 2353 6300

Hungary: see Austria

India: Philips INDIA Ltd, Band Box Building, 2nd floor,

254-D, Dr. Annie Besant Road, Worli, MUMBAI 400 025,

Tel. +91 22 493 8541, Fax. +91 22 493 0966

Indonesia: PT Philips Development Corporation, Semiconductors Division,

Gedung Philips, Jl. Buncit Raya Kav.99-100, JAKARTA 12510,

Tel. +62 21 794 0040 ext. 2501, Fax. +62 21 794 0080

Ireland: Newstead, Clonskeagh, DUBLIN 14,

Tel. +353 1 7640 000, Fax. +353 1 7640 200

Israel: RAPAC Electronics, 7 Kehilat Saloniki St, PO Box 18053,

TEL AVIV 61180, Tel. +972 3 645 0444, Fax. +972 3 649 1007

Italy: PHILIPS SEMICONDUCTORS, Piazza IV Novembre 3,

20124 MILANO, Tel. +39 2 6752 2531, Fax. +39 2 6752 2557

Japan: Philips Bldg 13-37, Kohnan 2-chome, Minato-ku,

TOKYO 108-8507, Tel. +81 3 3740 5130, Fax. +81 3 3740 5077

Korea: Philips House, 260-199 Itaewon-dong, Yongsan-ku, SEOUL,

Tel. +82 2 709 1412, Fax. +82 2 709 1415

Malaysia: No. 76 Jalan Universiti, 46200 PETALING JAYA, SELANGOR,

Tel. +60 3 750 5214, Fax. +60 3 757 4880

Mexico: 5900 Gateway East, Suite 200, EL PASO, TEXAS 79905,

Tel. +9-5 800 234 7381, Fax +9-5 800 943 0087

Middle East: see Italy

Printed in The Netherlands

125008/00/05/pp12

 Date of release: 1999 Mar 29

Document order number:

 9397 750 05481