background image

DATA  SHEET

Product specification

Supersedes data of April 1992

1996 May 14

DISCRETE SEMICONDUCTORS

BZW03 series

Voltage regulator diodes

handbook, 2 columns

M3D118

background image

1996 May 14

2

Philips Semiconductors

Product specification

Voltage regulator diodes

BZW03 series

FEATURES

Glass passivated

High maximum operating

temperature

Low leakage current

Excellent stability

Zener working voltage range:

7.5 to 270 V for 38 types

Transient suppressor stand-off

voltage range:

6.2 to 430 V for 45 types

Available in ammo-pack

Also available with preformed leads

for easy insertion.

DESCRIPTION

Rugged glass SOD64 package, using

a high temperature alloyed

construction. This package is

hermetically sealed and fatigue free

as coefficients of expansion of all

used parts are matched.

Fig.1  Simplified outline (SOD64) and symbol.

2/3 page (Datasheet)

MAM205 

k

a





LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

P

tot

total power dissipation

T

tp

= 25

°

C; lead length 10 mm; see Fig.2

6.00

W

T

amb

= 45

°

C; see Fig.2;

PCB mounted (see Fig.6)

1.75

W

P

ZRM

repetitive peak reverse power

dissipation

20

W

P

ZSM

non-repetitive peak reverse

power dissipation

t

p

= 100

µ

s; square pulse;

T

j

= 25

°

C prior to surge; see Fig.3

1000

W

P

RSM

non-repetitive peak reverse

power dissipation

10/1000

µ

s exponential pulse (see Fig.7);

T

j

= 25

°

C prior to surge; see Fig.4

500

W

T

stg

storage temperature

65

+175

°

C

T

j

junction temperature

65

+175

°

C

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1996 May 14

3

Philips Semiconductors

Product specification

Voltage regulator diodes

BZW03 series

ELECTRICAL CHARACTERISTICS

Total series

T

j

= 25

°

C unless otherwise specified.

Per type when used as voltage regulator diodes

T

j

= 25

°

C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MAX.

UNIT

V

F

forward voltage

I

F

= 1 A; see Fig.5

1.2

V

TYPE

No.

SUFFIX

(1)

WORKING VOLTAGE

DIFFERENTIAL

RESISTANCE

TEMPERATURE

 COEFFICIENT

TEST

CURRENT

REVERSE CURRENT at

REVERSE VOLTAGE

V

Z

 (V) at I

Z

r

dif

(

) at I

Z

S

Z

 (%/K) at I

Z

I

Z

 (mA)

I

R

 (

µ

A)

at V

R

 (V)

MIN.

NOM.

MAX.

TYP.

MAX.

MIN.

MAX.

MAX.

C7V5

7.0

7.5

7.9

0.7

1.5

0.00

0.07

175

1500

5.6

C8V2

7.7

8.2

8.7

0.8

1.5

0.03

0.08

150

1200

6.2

C9V1

8.5

9.1

9.6

0.9

2.0

0.03

0.08

150

40

6.8

C10

9.4

10

10.6

1.0

2.0

0.05

0.09

125

20

7.5

C11

10.4

11

11.6

1.1

2.5

0.05

0.10

125

15

8.2

C12

11.4

12

12.7

1.1

2.5

0.05

0.10

100

10

9.1

C13

12.4

13

14.1

1.2

2.5

0.05

0.10

100

4

10

C15

13.8

15

15.6

1.2

2.5

0.05

0.10

75

2

11

C16

15.3

16

17.1

1.3

2.5

0.06

0.11

75

2

12

C18

16.8

18

19.1

1.3

2.5

0.06

0.11

65

2

13

C20

18.8

20

21.2

1.5

3.0

0.06

0.11

65

2

15

C22

20.8

22

23.3

1.6

3.5

0.06

0.11

50

2

16

C24

22.8

24

25.6

1.8

3.5

0.06

0.11

50

2

18

C27

25.1

27

28.9

2.5

5

0.06

0.11

50

2

20

C30

28

30

32

4

8

0.06

0.11

40

2

22

C33

31

33

35

5

10

0.06

0.11

40

2

24

C36

34

36

38

6

11

0.06

0.11

30

2

27

C39

37

39

41

7

14

0.06

0.11

30

2

30

C43

40

43

46

10

20

0.07

0.12

30

2

33

C47

44

47

50

12

25

0.07

0.12

25

2

36

C51

48

51

54

14

27

0.07

0.12

25

2

39

C56

52

56

60

18

35

0.07

0.12

20

2

43

C62

58

62

66

20

42

0.08

0.13

20

2

47

C68

64

68

72

22

44

0.08

0.13

20

2

51

C75

70

75

79

25

45

0.08

0.13

20

2

56

C82

77

82

87

30

65

0.08

0.13

15

2

62

C91

85

91

96

40

75

0.09

0.13

15

2

68

background image

1996 May 14

4

Philips Semiconductors

Product specification

Voltage regulator diodes

BZW03 series

Note

1. To complete the type number the suffix is added to the basic type number, e.g. BZW03-C100.

C100

94

100

106

45

90

0.09

0.13

12

2

75

C110

104

110

116

65

125

0.09

0.13

12

2

82

C120

114

120

127

90

170

0.09

0.13

10

2

91

C130

124

130

141

100

190

0.09

0.13

10

2

100

C150

138

150

156

150

330

0.09

0.13

8

2

110

C160

153

160

171

180

350

0.09

0.13

8

2

120

C180

168

180

191

210

430

0.09

0.13

5

2

130

C200

188

200

212

250

500

0.09

0.13

5

2

150

C220

208

220

233

350

700

0.09

0.13

5

2

160

C240

228

240

256

450

900

0.09

0.13

5

2

180

C270

251

270

289

600

1200

0.09

0.13

5

2

200

TYPE

No.

SUFFIX

(1)

WORKING VOLTAGE

DIFFERENTIAL

RESISTANCE

TEMPERATURE

 COEFFICIENT

TEST

CURRENT

REVERSE CURRENT at

REVERSE VOLTAGE

V

Z

 (V) at I

Z

r

dif

(

) at I

Z

S

Z

 (%/K) at I

Z

I

Z

 (mA)

I

R

 (

µ

A)

at V

R

 (V)

MIN.

NOM.

MAX.

TYP.

MAX.

MIN.

MAX.

MAX.

background image

1996 May 14

5

Philips Semiconductors

Product specification

Voltage regulator diodes

BZW03 series

Per type when used as transient suppressor diodes

T

j

=   25

°

C unless otherwise specified.

TYPE

NUMBER

REVERSE

BREAKDOWN

VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

CLAMPING

VOLTAGE

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

V

(BR)R

 (V)

at I

test

S

Z

(%/K) at I

test

I

test

(mA)

V

(CL)R

(V)

at I

RSM

(A)

note 1

I

R

(

µ

A)

at V

R

(V)

MIN.

MIN.

MAX.

MAX.

MAX.

BZW03-C7V5

7.0

0.00

0.07

175

11.3

44.2

3000

6.2

BZW03-C8V2

7.7

0.03

0.08

150

12.3

40.6

2400

6.8

BZW03-C9V1

8.5

0.03

0.08

150

13.3

37.6

100

7.5

BZW03-C10

9.4

0.05

0.09

125

14.8

34.0

40

8.2

BZW03-C11

10.4

0.05

0.10

125

15.7

31.8

30

9.1

BZW03-C12

11.4

0.05

0.10

100

17.0

29.4

20

10

BZW03-C13

12.4

0.05

0.10

100

18.9

26.4

10

11

BZW03-C15

13.8

0.05

0.10

75

20.9

23.9

10

12

BZW03-C16

15.3

0.06

0.11

75

22.9

21.8

10

13

BZW03-C18

16.8

0.06

0.11

65

25.6

19.5

10

15

BZW03-C20

18.8

0.06

0.11

65

28.4

17.6

10

16

BZW03-C22

20.8

0.06

0.11

50

31.0

16.1

10

18

BZW03-C24

22.8

0.06

0.11

50

33.8

14.8

10

20

BZW03-C27

25.1

0.06

0.11

50

38.1

13.1

10

22

BZW03-C30

28

0.06

0.11

40

42.2

11.8

10

24

BZW03-C33

31

0.06

0.11

40

46.2

10.8

10

27

BZW03-C36

34

0.06

0.11

30

50.1

10.0

10

30

BZW03-C39

37

0.06

0.11

30

54.1

9.2

10

33

BZW03-C43

40

0.07

0.12

30

60.7

8.2

10

36

BZW03-C47

44

0.07

0.12

25

65.5

7.6

10

39

BZW03-C51

48

0.07

0.12

25

70.8

7.0

10

43

BZW03-C56

52

0.07

0.12

20

78.6

6.3

10

47

BZW03-C62

58

0.08

0.13

20

86.5

5.8

10

51

BZW03-C68

64

0.08

0.13

20

94.4

5.3

10

56

BZW03-C75

70

0.08

0.13

20

103.5

4.8

10

62

BZW03-C82

77

0.08

0.13

15

114.0

4.3

10

68

BZW03-C91

85

0.09

0.13

15

126

3.9

10

75

BZW03-C100

94

0.09

0.13

12

139

3.6

10

82

BZW03-C110

104

0.09

0.13

12

152

3.3

10

91

BZW03-C120

114

0.09

0.13

10

167

3.0

10

100

BZW03-C130

124

0.09

0.13

10

185

2.7

10

110

BZW03-C150

138

0.09

0.13

8

204

2.4

10

120

BZW03-C160

153

0.09

0.13

8

224

2.2

10

130

background image

1996 May 14

6

Philips Semiconductors

Product specification

Voltage regulator diodes

BZW03 series

Note

1. Non-repetitive peak reverse current in accordance with

“IEC 60-1, Section 8” (10/1000

µ

s pulse); see Fig.7.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

40

µ

m, see Fig.6.

For more information please refer to the

“General Part of associated Handbook”.

BZW03-C180

168

0.09

0.13

5

249

2.0

10

150

BZW03-C200

188

0.09

0.13

5

276

1.8

10

160

BZW03-C220

208

0.09

0.13

5

305

1.6

10

180

BZW03-C240

228

0.09

0.13

5

336

1.5

10

200

BZW03-C270

251

0.09

0.13

5

380

1.3

10

220

BZW03-C300

280

0.09

0.13

5

419

1.2

10

240

BZW03-C330

310

0.09

0.13

5

459

1.1

10

270

BZW03-C360

340

0.09

0.13

5

498

1.0

10

300

BZW03-C390

370

0.09

0.13

5

537

0.93

10

330

BZW03-C430

400

0.09

0.13

5

603

0.83

10

360

BZW03-C470

440

0.09

0.13

5

655

0.76

10

390

BZW03-C510

480

0.09

0.13

5

707

0.71

10

430

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R

th j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

25

K/W

R

th j-a

thermal resistance from junction to ambient

note 1

75

K/W

TYPE

NUMBER

REVERSE

BREAKDOWN

VOLTAGE

TEMPERATURE

COEFFICIENT

TEST

CURRENT

CLAMPING

VOLTAGE

REVERSE

CURRENT at

STAND-OFF

VOLTAGE

V

(BR)R

 (V)

at I

test

S

Z

(%/K) at I

test

I

test

(mA)

V

(CL)R

(V)

at I

RSM

(A)

note 1

I

R

(

µ

A)

at V

R

(V)

MIN.

MIN.

MAX.

MAX.

MAX.

background image

1996 May 14

7

Philips Semiconductors

Product specification

Voltage regulator diodes

BZW03 series

GRAPHICAL DATA

Fig.2

Maximum total power dissipation as a

function of temperature.

Solid line: tie-point temperature; lead length = 10 mm.

Dotted line: ambient temperature; device mounted as

shown in Fig.6.

handbook, halfpage

0

200

6

0

2

4

MBH447

Ptot

(W)

100

T (

°

C)

T

j

= 25

°

C prior to surge.

Fig.3

Maximum non-repetitive peak reverse

power dissipation as a function of pulse

duration (square pulse).

handbook, halfpage

10

2

10

10

2

10

3

10

4

10

1

1

tp (ms)

PZSM

(W)

10

MBH448

T

j

= 25

°

C prior to surge.

For definition of exponential pulse see Fig.7.

Fig.4

Maximum non-repetitive peak reverse

power dissipation as a function of pulse

duration (exponential pulse).

handbook, halfpage

10

2

10

2

10

3

10

4

10

1

1

t2 (ms)

PRSM

(W)

10

MBH449

T

j

= 25

°

C.

Fig.5

Forward current as a function of forward

voltage; typical values.

handbook, halfpage

0

2

6

0

2

4

MBH450

IF

(A)

1

VF (V)

background image

1996 May 14

8

Philips Semiconductors

Product specification

Voltage regulator diodes

BZW03 series

Fig.6  Device mounted on a printed-circuit board.

Dimensions in mm.

handbook, halfpage

MGA200

3

2

7

50

25

50

Fig.7

Non-repetitive peak reverse current

pulse definition.

In accordance with

“IEC 60-1, Section 8”.

t

1

= 10

µ

s.

t

2

= 1000

µ

s.

handbook, halfpage

MGD521

IRSM

(%)

100

90

50

10

t1

t2

t

background image

1996 May 14

9

Philips Semiconductors

Product specification

Voltage regulator diodes

BZW03 series

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Dimensions in mm.

The marking band indicates the cathode.

Fig.8  SOD64.

handbook, full pagewidth

MBC049

,



,



4.5

max

k

a

28 min

28 min

5.0 max

1.35

max