background image

DATA  SHEET

Product specification

Supersedes data of 1996 May 30

1996 Sep 18

DISCRETE SEMICONDUCTORS

BYM36 series

Fast soft-recovery

controlled avalanche rectifiers

handbook, 2 columns

M3D118

background image

1996 Sep 18

2

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

FEATURES

Glass passivated

High maximum operating

temperature

Low leakage current

Excellent stability

Guaranteed avalanche energy

absorption capability

Available in ammo-pack

Also available with preformed leads

for easy insertion.

DESCRIPTION

Rugged glass SOD64 package, using

a high temperature alloyed

construction.

This package is hermetically sealed

and fatigue free as coefficients of

expansion of all used parts are

matched.

Fig.1  Simplified outline (SOD64) and symbol.

2/3 page (Datasheet)

MAM104 

k

a

,



,



LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

RRM

repetitive peak reverse voltage

BYM36A

200

V

BYM36B

400

V

BYM36C

600

V

BYM36D

800

V

BYM36E

1000

V

BYM36F

1200

V

BYM36G

1400

V

V

R

continuous reverse voltage

BYM36A

200

V

BYM36B

400

V

BYM36C

600

V

BYM36D

800

V

BYM36E

1000

V

BYM36F

1200

V

BYM36G

1400

V

I

F(AV)

average forward current

T

tp

= 55

°

C; lead length = 10 mm;

see Figs 2; 3 and 4

averaged over any 20 ms period;

see also Figs 14; 15 and 16

BYM36A to C

3.0

A

BYM36D and E

2.9

A

BYM36F and G

2.9

A

I

F(AV)

average forward current

T

amb

= 65

°

C; PCB mounting (see

Fig.25); see Figs 5; 6 and 7

averaged over any 20 ms period;

see also Figs 14; 15 and 16

BYM36A to C

1.25

A

BYM36D and E

1.20

A

BYM36F and G

1.15

A

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1996 Sep 18

3

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

ELECTRICAL CHARACTERISTICS

T

j

= 25

°

C unless otherwise specified.

I

FRM

repetitive peak forward current

T

tp

= 55

°

C; see Figs 8; 9 and 10

BYM36A to C

37

A

BYM36D and E

33

A

BYM36F and G

27

A

I

FRM

repetitive peak forward current

T

amb

= 65

°

C; see Figs 11; 12 and 13

BYM36A to C

13

A

BYM36D and E

11

A

BYM36F and G

10

A

I

FSM

non-repetitive peak forward current

t = 10 ms half sine wave; T

j

= T

j max

prior to surge; V

R

= V

RRMmax

65

A

E

RSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; T

j

= T

j max

 prior to surge;

inductive load switched off

10

mJ

T

stg

storage temperature

65

+175

°

C

T

j

junction temperature

see Figs 17 and 18

65

+175

°

C

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

F

forward voltage

I

F

= 3 A; T

j

= T

j max

;

see Figs 19; 20 and 21

BYM36A to C

1.22

V

BYM36D and E

1.28

V

BYM36F and G

1.24

V

V

F

forward voltage

I

F

= 3 A;

see Figs 19; 20 and 21

BYM36A to C

1.60

V

BYM36D and E

1.78

V

BYM36F and G

1.57

V

V

(BR)R

reverse avalanche breakdown

voltage

I

R

= 0.1 mA

BYM36A

300

V

BYM36B

500

V

BYM36C

700

V

BYM36D

900

V

BYM36E

1100

V

BYM36F

1300

V

BYM36G

1500

V

I

R

reverse current

V

R

= V

RRMmax

; see Fig.22

5

µ

A

V

R

= V

RRMmax

;

T

j

= 165

°

C; see Fig.22

150

µ

A

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

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1996 Sep 18

4

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

40

µ

m, see Fig.25.

For more information please refer to the

“General Part of associated Handbook”.

t

rr

reverse recovery time

when switched from

I

F

= 0.5 A to I

R

= 1 A;

measured at I

R

= 0.25 A;

see Fig. 26

BYM36A to C

100

ns

BYM36D and E

150

ns

BYM36F and G

250

ns

C

d

diode capacitance

f = 1 MHz; V

R

= 0 V;

see Figs 23 and 24

BYM36A to C

85

pF

BYM36D and E

75

pF

BYM36F and G

65

pF

maximum slope of reverse recovery

current

when switched from

I

F

= 1 A to V

R

30 V and

dI

F

/dt =

1 A/

µ

s;

see Fig.27

BYM36A to C

7

A/

µ

s

BYM36D and E

6

A/

µ

s

BYM36F and G

5

A/

µ

s

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R

th j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

25

K/W

R

th j-a

thermal resistance from junction to ambient

note 1

75

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

dI

R

dt

--------

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1996 Sep 18

5

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

GRAPHICAL DATA

BYM36A to C

a = 1.42; V

R

= V

RRMmax

;

δ

= 0.5.

Switched mode application.

Fig.2

Maximum average forward current as a

function of tie-point temperature (including

losses due to reverse leakage).

handbook, halfpage

0

200

0

MSA884

100

T     (  C)

o

I F(AV)

(A)

3

1

2

lead length (mm)

20 15

10

tp

BYM36D and E

a = 1.42; V

R

= V

RRMmax

;

δ

= 0.5.

Switched mode application.

Fig.3

Maximum average forward current as a

function of tie-point temperature (including

losses due to reverse leakage).

handbook, halfpage

0

200

0

MSA885

100

I F(AV)

(A)

3

1

2

lead length (mm)

20

15

10

T     (  C)

o

tp

BYM36F and G

a = 1.42; V

R

= V

RRMmax

;

δ

= 0.5.

Switched mode application.

Fig.4

Maximum average forward current as a

function of tie-point temperature (including

losses due to reverse leakage).

handbook, halfpage

0

200

4.0

0

0.8

3.2

MBD418

100

I F(AV)

(A)

T    (  C)

o

tp

1.6

2.4

lead length 10 mm

BYM36A to C

a = 1.42; V

R

= V

RRMmax

;

δ

= 0.5.

Device mounted as shown in Fig.25.

Switched mode application.

Fig.5

Maximum average forward current as a

function of ambient temperature (including

losses due to reverse leakage).

0

200

2.0

0

0.4

1.6

MLB492

100

I F(AV)

(A)

T        (  C)

o

amb

0.8

1.2

background image

1996 Sep 18

6

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

BYM36D and E

a = 1.42; V

R

= V

RRMmax

;

δ

= 0.5.

Device mounted as shown in Fig.25.

Switched mode application.

Fig.6

Maximum average forward current as a

function of ambient temperature (including

losses due to reverse leakage).

0

200

2.0

0

0.4

1.6

MLB493

100

I F(AV)

(A)

T        (  C)

o

amb

0.8

1.2

BYM36F and G

a = 1.42; V

R

= V

RRMmax

;

δ

= 0.5.

Device mounted as shown in Fig.25.

Switched mode application.

Fig.7

Maximum average forward current as a

function of ambient temperature (including

losses due to reverse leakage).

0

200

2.0

0

0.4

1.6

MBD417

100

I F(AV)

(A)

T        (  C)

o

amb

0.8

1.2

Fig.8  Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

BYM36A to C

T

tp

= 55

°

C; R

th j-tp

= 25 K/W.

V

RRMmax

 during 1

− δ

; curves include derating for T

j max

 at V

RRM

= 600 V.

0

20

10

2

10

1

1

10

10

2

10

3

10

4

MSA890

40

10

30

t    (ms)

p

I FRM

(A)

= 0.05

δ

0.1

0.2

0.5

1

background image

1996 Sep 18

7

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

BYM36D and E

T

tp

= 55

°

C; R

th j-tp

= 25 K/W.

V

RRMmax

 during 1

− δ

; curves include derating for T

j max

 at V

RRM

= 1000 V.

Fig.9  Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

0

20

10

2

10

1

1

10

10

2

10

3

10

4

MSA889

40

10

30

t    (ms)

p

I FRM

(A)

= 0.05

δ

0.1

0.2

0.5

1

BYM36F and G

T

tp

= 55

°

C; R

th j-tp

= 25 K/W.

V

RRMmax

 during 1

− δ

; curves include derating for T

j max

 at V

RRM

= 1400 V.

Fig.10  Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

30

0

10

10

2

1

10

10

2

10

3

10

4

MBD450

20

t    (ms)

p

10

1

I FRM

(A)

5

15

25

= 0.05

δ

0.1

0.2

0.5

1

background image

1996 Sep 18

8

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

Fig.11  Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

BYM36A to C

T

amb

= 65

°

C; R

th j-a

= 75 K/W.

V

RRMmax

 during 1

− δ

; curves include derating for T

j max

 at V

RRM

= 600 V.

0

8

10

2

10

1

1

10

10

2

10

3

10

4

MSA887

16

4

12

t    (ms)

p

I FRM

(A)

= 0.05

δ

0.1

0.2

0.5

1

Fig.12  Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

BYM36D and E

T

amb

= 65

°

C; R

th j-a

= 75 K/W.

V

RRMmax

 during 1

− δ

; curves include derating for T

j max

 at V

RRM

= 1000 V.

0

10

2

10

1

1

10

10

2

10

3

10

4

MSA888

t    (ms)

p

I FRM

(A)

12

4

8

2

6

10

1

= 0.05

δ

0.1

0.2

0.5

background image

1996 Sep 18

9

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

Fig.13  Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

BYM36F and G

T

amb

= 65

°

C; R

th j-a

= 75 K/W.

V

RRMmax

 during 1

− δ

; curves include derating for T

j max

 at V

RRM

= 1400 V.

12

0

4

10

2

1

10

10

2

10

3

10

4

MBD445

8

t    (ms)

p

10

1

I FRM

(A)

2

6

10

= 0.05

δ

0.1

0.2

0.5

1

Fig.14 Maximum steady state power dissipation

(forward plus leakage current losses,

excluding switching losses) as a function of

average forward current.

BYM36A to C

a = I

F(RMS)

/I

F(AV)

; V

R

= V

RRMmax

;

δ

= 0.5.

5

0

1

3

0

MSA882

2

1

2

3

4

I F(AV) (A)

P

(W)

a = 3

2.5

2

1.42

1.57

BYM36D and E

a = I

F(RMS)

/I

F(AV)

; V

R

= V

RRMmax

;

δ

= 0.5.

Fig.15 Maximum steady state power dissipation

(forward plus leakage current losses,

excluding switching losses) as a function of

average forward current.

handbook, halfpage

5

0

1

3

0

MSA883

2

1

2

3

4

I F(AV) (A)

P

(W)

a = 3

2.5

2

1.42

1.57

background image

1996 Sep 18

10

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

BYM36F and G

a = I

F(RMS)

/I

F(AV)

; V

R

= V

RRMmax

;

δ

= 0.5.

Fig.16  Maximum steady state power dissipation

(forward plus leakage current losses,

excluding switching losses) as a function of

average forward current.

handbook, halfpage

5

0

1

3

0

MLB560

2

1

2

3

4

I F(AV) (A)

P

(W)

a = 3

2.5

2

1.42

1.57

Fig.17 Maximum permissible junction temperature

as a function of reverse voltage.

BYM36A to E

Solid line = V

R

.

Dotted line = V

RRM

;

δ

= 0.5.

handbook, halfpage

200

0

400

1200

0

MSA873

800

100

V    (V)

R

A

B

C

D

E

Tj

(

°

C)

Fig.18 Maximum permissible junction temperature

as a function of reverse voltage.

BYM36F and G

Solid line = V

R

.

Dotted line = V

RRM

;

δ

= 0.5.

handbook, halfpage

200

0

2000

0

MLB601

1000

100

V    (V)

R

T j

(  C)

o

F

G

Fig.19 Forward current as a function of forward

voltage; maximum values.

BYM36A to C

Dotted line: T

j

= 175

°

C.

Solid line: T

j

= 25

°

C.

handbook, halfpage

0

12

IF

8

(A)

4

0

1

2

VF (V)

3

MSA880 

background image

1996 Sep 18

11

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

Fig.20 Forward current as a function of forward

voltage; maximum values.

BYM36D and E.

Dotted line: T

j

= 175

°

C.

Solid line: T

j

= 25

°

C.

handbook, halfpage

0

12

8

4

0

1

2

4

MSA881

3

IF

(A)

VF (V)

Fig.21 Forward current as a function of forward

voltage; maximum values.

BYM36F and G.

Dotted line: T

j

= 175

°

C.

Solid line: T

j

= 25

°

C.

handbook, halfpage

0

12

8

4

0

1

2

3

MBD425

IF

(A)

VF (V)

Fig.22 Reverse current as a function of junction

temperature; maximum values.

handbook, halfpage

MGC550

0

100

200

10

3

10

2

10

1

(

µ

A)

IR

Tj (

°

C)

V

R

= V

RRMmax

.

BYM36A to E

f = 1 MHz; T

j

= 25

°

C.

Fig.23 Diode capacitance as a function of reverse

voltage, typical values.

1

MSA886

10

10

2

10

3

1

10

2

10

V     (V)

R

Cd

(pF)

BYM36A,B,C

BYM36D,E

background image

1996 Sep 18

12

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

BYM36F and G

f = 1 MHz; T

j

= 25

°

C.

Fig.24 Diode capacitance as a function of reverse

voltage, typical values.

1

MBD438

10

10

2

10

4

1

10

2

10

V    (V)

R

C d

(pF)

10

3

Fig.25  Device mounted on a printed-circuit board.

Dimensions in mm.

handbook, halfpage

MGA200

3

2

7

50

25

50

handbook, full pagewidth

10 

50 

25 V

DUT

MAM057

+

t rr

0.5

0

0.5

1

IF

(A)

IR

(A)

t

0.25

Fig.26  Test circuit and reverse recovery time waveform and definition.

Input impedance oscilloscope: 1 M

, 22 pF; t

r

< 7 ns.

Source impedance: 50

; t

r

15 ns.

background image

1996 Sep 18

13

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

Fig.27  Reverse recovery definitions.

andbook, halfpage

10%

100%

dI

dt

t

trr

IF

IR

MGC499

F

dI

dt

R

background image

1996 Sep 18

14

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYM36 series

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Fig.28  SOD64.

Dimensions in mm.

The marking band indicates the cathode.

handbook, full pagewidth

MBC049

,



,



4.5

max

k

a

28 min

28 min

5.0 max

1.35

max