TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
1
20 - 40 GHz X2 Frequency Multiplier TGC1430F
Key Features and Performance
•
0.25um pHEMT Technology
•
20 - 40 GHz Output Frequencies
•
10 - 20 GHz Fundamental Frequencies
•
-12 +/- 2dB Conversion Gain
•
18 dBm Input Drive Optimum
•
25dB Fundamental Isolation
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
Primary Applications
•
Point-to-Point Radio
•
Point-to-Multipoint Communications
Chip Dimensions 1.50 mm x 1.50 mm
Conversion Gain vs Input Frequency (Input @ 17.5dBm)
Conversion Gain and Fundamental Isolation
for 27 - 32 GHz Output
Fundamental Isolation
-30.0
-25.0
-20.0
-15.0
-10.0
-5.0
0.0
6.0
8.0
10.0
12.0
14.0
16.0
18.0
20.0
22.0
Input Frequency (GHz)
C
onve
rs
ion Ga
in (
dB
)
@17.5dBm
0
5
10
15
20
25
30
35
40
45
6
8
10
12
14
16
18
20
22
Input Frequency (GHz)
F
undament
al
I
sol
at
ion (
dB
)
@17.5dBm
-25
-20
-15
-10
-5
0
13.5
14.0
14.5
15.0
15.5
16.0
Input Frequency (GHz)
C
onve
rs
ion Ga
in (
dB
)
10
15
20
25
30
35
F
und. I
sola
tion
(dB
)
Input Drive of +17.5dBm
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications subject to change without notice
TGC1430F - Recommended Assembly Drawing
TGC1430F
TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504 Web: www.triquint.com
Advance Product Information
August 29, 2000
Reflow process assembly notes:
•= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC
•= alloy station or conveyor furnace with reducing atmosphere
•= no fluxes should be utilized
•= coefficient of thermal expansion matching is critical for long-term reliability
•= storage in dry nitrogen atmosphere
Component placement and adhesive attachment assembly notes:
•= vacuum pencils and/or vacuum collets preferred method of pick up
•= avoidance of air bridges during placement
•= force impact critical during auto placement
•= organic attachment can be used in low-power applications
•= curing should be done in a convection oven; proper exhaust is a safety concern
•= microwave or radiant curing should not be used because of differential heating
•= coefficient of thermal expansion matching is critical
Interconnect process assembly notes:
•= thermosonic ball bonding is the preferred interconnect technique
•= force, time, and ultrasonics are critical parameters
•= aluminum wire should not be used
•= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire
•= maximum stage temperature: 200ΓC
Assembly Process Notes
GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should
be observed during handling, assembly and test.
Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process
specifications. Specifications are subject to change without notice.
TGC1430F