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TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504  Web:  www.triquint.com

Advance Product Information

August 29, 2000

1

20 - 40 GHz X2 Frequency Multiplier                      TGC1430F

Key Features and Performance

0.25um pHEMT Technology

20 - 40 GHz Output Frequencies

10 - 20 GHz Fundamental Frequencies

-12 +/- 2dB  Conversion Gain

18 dBm Input Drive Optimum

25dB Fundamental Isolation

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications subject to change without notice

Primary Applications

Point-to-Point Radio

Point-to-Multipoint Communications

Chip Dimensions 1.50 mm x 1.50 mm

Conversion Gain vs Input Frequency (Input  @ 17.5dBm)

Conversion Gain  and Fundamental Isolation

for 27 - 32 GHz Output

Fundamental Isolation

-30.0

-25.0

-20.0

-15.0

-10.0

-5.0

0.0

6.0

8.0

10.0

12.0

14.0

16.0

18.0

20.0

22.0

Input Frequency (GHz)

C

onve

rs

ion Ga

in (

dB

)

@17.5dBm

0

5

10

15

20

25

30

35

40

45

6

8

10

12

14

16

18

20

22

Input Frequency (GHz)

F

undament

al

 I

sol

at

ion (

dB

)

@17.5dBm

-25

-20

-15

-10

-5

0

13.5

14.0

14.5

15.0

15.5

16.0

Input Frequency (GHz)

C

onve

rs

ion Ga

in (

dB

)

10

15

20

25

30

35

F

und. I

sola

tion 

(dB

)

Input Drive of +17.5dBm

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TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504  Web:  www.triquint.com

Advance Product Information

August 29, 2000

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications subject to change without notice

TGC1430F - Recommended Assembly Drawing

TGC1430F

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TriQuint Semiconductor Texas : Phone (972)994-8465 Fax (972)994 8504  Web:  www.triquint.com

Advance Product Information

August 29, 2000

Reflow process assembly notes:

•= AuSn (80/20) solder with limited exposure to temperatures at or above 300ΓC

•= alloy station or conveyor furnace with reducing atmosphere

•= no fluxes should be utilized

•= coefficient of thermal expansion matching is critical for long-term reliability

•= storage in dry nitrogen atmosphere

Component placement and adhesive attachment assembly notes:

•= vacuum pencils and/or vacuum collets preferred method of pick up

•= avoidance of air bridges during placement

•= force impact critical during auto placement

•= organic attachment can be used in low-power applications

•= curing should be done in a convection oven; proper exhaust is a safety concern

•= microwave or radiant curing should not be used because of differential heating

•= coefficient of thermal expansion matching is critical

Interconnect process assembly notes:

•= thermosonic ball bonding is the preferred interconnect technique

•= force, time, and ultrasonics are critical parameters

•= aluminum wire should not be used

•= discrete FET devices with small pad sizes should be bonded with 0.0007-inch wire

•= maximum stage temperature: 200ΓC

Assembly Process Notes

GaAs MMIC devices are susceptible to damage from Electrostatic Discharge. Proper precautions should 

be observed during handling, assembly and test.

Note: Devices designated as EPU are typically early in their characterization process prior to finalizing all electrical and process

specifications. Specifications are subject to change without notice.

TGC1430F