1
PHASE CONTROL SCR
Bulletin I2116
25TTS.. SERIES
V
T
< 1.25V @ 16A
I
TSM
= 200A
V
R
/ V
D
= 1200V
Description/Features
The 25TTS.. new series of silicon controlled recti-
fiers are specifically designed for medium power
switching and phase control applications. The
glass passivation technology used has reliable
operation up to 125° C junction temperature.
Typical applications are in input rectification (soft
start) and these products are designed to be used
with International Rectifier input diodes, switches
and output rectifiers which are available in identi-
cal package outlines.
Major Ratings and Characteristics
TO-220AC
Capacitive input filter T
A
= 55°C, T
J
= 125°C,
18
22
A
common heatsink of 1°C/W
Output Current in Typical Applications
Applications
Single-phase Bridge
Three-phase Bridge Units
I
T(AV)
Sinusoidal
16
A
waveform
I
RMS
25
A
V
RRM
/ V
DRM
800 and 1200
V
I
TSM
250
A
V
T
@ 16 A, T
J
= 25°C
1.25
V
dv/dt
500
V/µs
di/dt
150
A/µs
T
J
- 40 to 125
°C
Characteristics
25TTS..
Units
Also available in SMD-220 package (series 25TTS..S)
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2
25TTS.. Series
Part Number
V
RRM
, maximum
V
DRM
, maximum
I
RRM
/
I
DRM
peak reverse voltage
peak direct voltage
125°C
V
V
mA
25TTS08
800
800
5
25TTS12
1200
1200
Voltage Ratings
I
T(AV)
Max. Average On-state Current
16
A
50% duty cycle @ T
C
= 90° C, sinusoidal wave form
I
RMS
Max. RMS On-state Current
25
I
TSM
Max. Peak One Cycle Non-Repetitive
210
10ms Sine pulse, rated V
RRM
applied
Surge Current
250
10ms Sine pulse, no voltage reapplied
I
2
t
Max. I
2
t for fusing
220
A
2
s
10ms Sine pulse, rated V
RRM
applied
310
10ms Sine pulse, no voltage reapplied
I
2
√
t
Max. I
2
√
t for fusing
3100
A
2
√
s
t = 0.1 to 10ms, no voltage reapplied
V
TM
Max. On-state Voltage Drop
1.25
V
@ 16A, T
J
= 25°C
r
t
On-state slope resistance
12.0
m
Ω
T
J
= 125°C
V
T(TO)
Threshold Voltage
1.0
V
I
RM
/I
DM
Max.Reverse and Direct
0.5
mA
T
J
= 25 °C
Leakage Current
5.0
T
J
= 125 °C
I
H
Max. Holding Current
100
mA
Anode Supply = 6V, Resistive load, Initial I
T
=1A
I
L
Max. Latching Current
200
mA
Anode Supply = 6V, Resistive load
dv/dt Max. rate of rise of off-state Voltage
500
V/µs
di/dt
Max. rate of rise of turned-on Current
150
A/µs
Absolute Maximum Ratings
Parameters
25TTS..
Units
Conditions
V
R
= rated V
RRM
/ V
DRM
To Order
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3
25TTS.. Series
Triggering
P
GM
Max. peak Gate Power
8.0
W
P
G(AV)
Max. average Gate Power
2.0
+ I
GM
Max. paek positive Gate Current
1.5
A
- V
GM
Max. paek negative Gate Voltage
10
V
I
GT
Max. required DC Gate Current
60
mA
Anode supply = 6V, resistive load, T
J
= - 10°C
to trigger
45
Anode supply = 6V, resistive load, T
J
= 25°C
20
Anode supply = 6V, resistive load, T
J
= 125°C
V
GT
Max. required DC Gate Voltage
2.5
V
Anode supply = 6V, resistive load, T
J
= - 10°C
to trigger
2.0
Anode supply = 6V, resistive load, T
J
= 25°C
1.0
Anode supply = 6V, resistive load, T
J
= 125°C
V
GD
Max. DC Gate Voltage not to trigger
0.25
T
J
= 125°C, V
DRM
= rated value
I
GD
Max. DC Gate Current not to trigger
2.0
mA
T
J
= 125°C, V
DRM
= rated value
Parameters
25TTS..
Units
Conditions
Switching
Parameters
25TTS..
Units
Conditions
t
gt
Typical turn-on time
0.9
µs
T
J
= 25°C
t
rr
Typical reverse recovery time
4
T
J
= 125°C
t
q
Typical turn-off time
110
T
J
Max. Junction Temperature Range
- 40 to 125
°C
T
stg
Max. Storage Temperature Range
- 40 to 125
R
thJC
Max. Thermal Resistance Junction
1.1
°C/W
DC operation
to Case
R
thJA
Max. Thermal Resistance Junction
62
to Ambient
R
thCS
Typ. Thermal Resistance Case
0.5
Mounting surface, smooth and greased
to Ambient
wt
Approximate Weight
2 (0.07)
g (oz.)
T
Mounting Torque
Min.
6 (5)
Max.
12 (10)
Case Style
TO-220AC
Thermal-Mechanical Specifications
Parameters
25TTS..
Units
Conditions
Kg-cm
(Ibf-in)
To Order
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4
25TTS.. Series
Fig. 1 - Current Rating Characteristics
Fig. 2 - Current Rating Characteristics
Fig. 3 - On-state Power Loss Characteristics
Fig. 4 - On-state Power Loss Characteristics
Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 67 - Maximum Non-Repetitive Surge Current
90
95
100
105
110
115
120
125
0
2
4
6
8
10 12 14 16 18
30°
60°
90°
120°
180°
C o ndu ction A ng le
25TTS.. Series
R (DC) = 1.1 K/W
thJC
Average On-state Current (A)
M
a
xi
mu
m
A
llo
w
a
b
le
C
a
se
T
e
mp
er
a
tu
re
(
°C
)
85
90
95
100
105
110
115
120
125
0
5
10
15
20
25
30
DC
30°
60°
90°
120°
180°
M
a
xi
mu
m
A
llo
w
a
b
le
C
a
se
T
emp
er
a
tu
re
(°
C
)
Conduction Period
25TTS.. Series
R (DC) = 1.1 K/W
thJC
Average On-state Current (A)
0
5
10
15
20
25
30
0
5
10
15
20
RMS Limit
180°
120°
90°
60°
30°
Conduction Angle
25TTS..
T = 125°C
J
Average On-state Current (A)
M
a
xi
mu
m A
ve
ra
g
e
O
n-
sta
te
P
o
we
r L
o
ss
(W
)
0
5
10
15
20
25
30
35
0
5
10
15
20
25
30
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Average On-state Current (A)
M
a
xi
mu
m A
ve
ra
ge
O
n-
st
a
te
P
o
w
e
r L
o
ss
(
W
)
25TTS..
T = 125°C
J
90
110
130
150
170
190
210
230
1
10
100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
At Any Rated Load Condition And With
Rated V Applied Following Surge.
25TTS..Series
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
RRM
J
Pe
a
k H
a
lf
Si
ne
W
a
ve
O
n-
sta
te
C
ur
re
nt
(
A
)
70
90
110
130
150
170
190
210
230
250
270
0.01
0.1
1
10
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Pe
a
k Hal
f S
in
e
W
a
ve
F
o
rw
a
rd
C
ur
re
n
t (
A
)
Versus Pulse Train Duration.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
J
RRM
25TTS.. Series
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5
25TTS.. Series
Fig. 7 - On-state Voltage Drop Characteristics
Fig. 8 - Gate Characteristics
Fig. 9 - Thermal Impedance Z
thJC
Characteristics
1
10
100
1000
0
1
2
3
4
5
T = 25°C
J
T = 125°C
J
25TTS.. Series
Instantaneous On-state Voltage (V)
Insta
nta
ne
o
us O
n-
sta
te
C
ur
re
nt (
A
)
0.1
1
10
100
0.001
0.01
0.1
1
10
100
(b)
(a)
Rectangular gate pulse
(4)
(3)
(2) (1)
Instantaneous Gate Current (A)
In
st
a
n
ta
ne
o
us Ga
te
V
olt
ag
e
(V
)
TJ
=
2
5 °
C
TJ
=
1
25 °C
b)Recommended load line for
VGD
IGD
Frequency Limited by PG(AV)
25TTS..
a)Recommended load line for
rated di/dt: 10 V, 20 ohms
tr = 0.5 µs, tp >= 6 µs
<= 30% rated di/dt: 10 V, 65 ohms
tr = 1 µs, tp >= 6 µs
(1) PGM = 40 , tp = 1 ms
(2) PGM = 20 W, tp = 2 ms
(3) PGM = 8 W, tp = 5 ms
(4) PGM = 4 W, tp = 10 ms
TJ
=
-1
0 °
C
0.01
0.1
1
10
0.0001
0.001
0.01
0.1
1
Square Wave Pulse Duration (s)
th
JC
Steady State Value
(DC Operation)
Tr
a
ns
ien
t T
her
m
a
l Im
pe
d
a
nc
e
Z
(K
/W
)
25TTS.. Series
Single Pulse
D = 0.50
D = 0.33
D = 0.25
D = 0.17
D = 0.08
To Order
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Index
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6
25TTS.. Series
Outline Table
Dimensions in millimeters (and inches)
3.78 (0.15)
3.54 (0.14)
10.54 (0.41)
MAX.
DIA.
15.24 (0.60)
14.84 (0.58)
2.92 (0.11)
2.54 (0.10)
1
TERM 2
14.09 (0.55)
13.47 (0.53)
3.96 (0.16)
3.55 (0.14)
0.94 (0.04)
0.69 (0.03)
4.57 (0.18)
4.32 (0.17)
3
0.61 (0.02) MAX.
5.08 (0.20) REF.
1.32 (0.05)
1.22 (0.05)
6.48 (0.25)
6.23 (0.24)
2°
0.10 (0.004)
1.40 (0.05)
1.15 (0.04)
2.89 (0.11)
2.84 (0.10)
1
3
2.04 (0.080) MAX.
2
2
25
T
T
S
12
Device Code
1
5
2
4
3
1
-
Current Rating, RMS value
2
-
Circuit Configuration
T = Single Thyristor
3
-
Package
T = TO-220AC
4
-
Type of Silicon
S = Converter Grade
5
-
Voltage code: Code x 100 = V
RRM
Ordering Information Table
08 = 800V
12 = 1200V
(G) 3
2
(A)
1 (K)
2
To Order
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