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DATA  SHEET

Product specification

Supersedes data of April 1982

1996 Jun 07

DISCRETE SEMICONDUCTORS

BYV95 series

Fast soft-recovery

controlled avalanche rectifiers

handbook, 2 columns

M3D116

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1996 Jun 07

2

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYV95 series

FEATURES

Glass passivated

High maximum operating

temperature

Low leakage current

Excellent stability

Guaranteed avalanche energy

absorption capability

Available in ammo-pack.

DESCRIPTION

Rugged glass SOD57 package,

using a high temperature alloyed

construction. This package is

hermetically sealed and fatigue free

as coefficients of expansion of all

used parts are matched.

Fig.1  Simplified outline (SOD57) and symbol.

2/3 page (Datasheet)

MAM047 

k

a







LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

RRM

repetitive peak reverse voltage

BYV95A

200

V

BYV95B

400

V

BYV95C

600

V

V

R

continuous reverse voltage

BYV95A

200

V

BYV95B

400

V

BYV95C

600

V

I

F(AV)

average forward current

T

tp

= 65

°

C; lead length = 10 mm

see Fig. 2;

averaged over any 20 ms period;

see also Fig. 6

1.5

A

T

amb

= 65

°

C; PCB mounting (see

Fig.11); see Fig. 3;

averaged over any 20 ms period;

see also Fig. 6

0.8

A

I

FRM

repetitive peak forward current

T

tp

= 65

°

C; see Fig. 4

17

A

T

amb

= 65

°

C; see Fig. 5

9

A

I

FSM

non-repetitive peak forward current

t = 10 ms half sine wave;

T

j

= T

j max

 prior to surge;

V

R

= V

RRMmax

35

A

E

RSM

non-repetitive peak reverse

avalanche energy

L = 120 mH; T

j

= T

j max

 prior to

surge; inductive load switched off

10

mJ

T

stg

storage temperature

65

+175

°

C

T

j

junction temperature

see Fig. 7

65

+175

°

C

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1996 Jun 07

3

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYV95 series

ELECTRICAL CHARACTERISTICS

T

j

= 25

°

C unless otherwise specified.

THERMAL CHARACTERISTICS

Note

1. Device mounted on an epoxy-glass printed-circuit board, 1.5 mm thick; thickness of Cu-layer

40

µ

m, see Fig.11.

For more information please refer to the

“General Part of associated Handbook”.

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

F

forward voltage

I

F

= 3 A; T

j

= T

j max

; see Fig. 8

1.35

V

I

F

= 3 A; see Fig. 8

1.60

V

V

(BR)R

reverse avalanche

breakdown voltage

I

R

= 0.1 mA

BYV95A

300

V

BYV95B

500

V

BYV95C

700

V

I

R

reverse current

V

R

= V

RRMmax

;

see Fig. 9

1

µ

A

V

R

= V

RRMmax

; T

j

= 165

°

C;

see Fig. 9

150

µ

A

t

rr

reverse recovery time

when switched from I

F

= 0.5 A

to I

R

= 1 A; measured at

I

R

= 0.25 A; see Fig. 12

250

ns

C

d

diode capacitance

f = 1 MHz; V

R

= 0 V; see Fig. 10

45

pF

maximum slope of

reverse recovery current

when switched from I

F

= 1 A to

V

R

30 V and dI

F

/dt =

1 A/

µ

s;

see Fig.13

7

A/

µ

s

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R

th j-tp

thermal resistance from junction to tie-point

lead length = 10 mm

46

K/W

R

th j-a

thermal resistance from junction to ambient

note 1

100

K/W

dI

R

dt

--------

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1996 Jun 07

4

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYV95 series

GRAPHICAL DATA

a = 1.42; V

R

= V

RRMmax

;

δ

= 0.5.

Switched mode application.

Fig.2

Maximum permissible average forward

current as a function of tie-point temperature

(including losses due to reverse leakage).

handbook, halfpage

0

200

2.0

0

0.4

MGC581

0.8

1.2

1.6

100

IF(AV)

Ttp (  C)

(A)

o

lead length 10 mm

a = 1.42; V

R

= V

RRMmax

;

δ

= 0.5.

Device mounted as shown in Fig.11.

Switched mode application.

Fig.3

Maximum permissible average forward

current as a function of ambient temperature

(including losses due to reverse leakage).

handbook, halfpage

0

1.2

IF(AV)

0.8

0.4

0

200

MGC580

100

Tamb (  C)

(A)

o

T

tp

= 65

°

C; R

th j-tp

= 46 K/W.

V

RRMmax

 during 1

− δ

; curves include derating for T

j max

 at V

RRM

= 600 V.

Fig.4  Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

handbook, full pagewidth

20

IFRM

0

10

2

10

1

1

10

10

2

10

tp (ms)

3

10

4

MGC578

4

8

12

16

0.1

0.2

1

(A)

δ 

=

0.05

0.5

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1996 Jun 07

5

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYV95 series

T

amb

= 65

°

C; R

th j-a

= 100 K/W.

V

RRMmax

 during 1

− δ

; curves include derating for T

j max

 at V

RRM

= 600 V.

Fig.5  Maximum repetitive peak forward current as a function of pulse time (square pulse) and duty factor.

handbook, full pagewidth

10

IFRM

0

10

2

10

1

1

10

10

2

10

tp (ms)

3

10

4

MGC579

2

4

6

8

0.1

0.2

1

(A)

δ 

=

0.05

0.5

a = I

F(RMS)

/I

F(AV)

; V

R

= V

RRMmax

;

δ

= 0.5.

Fig.6

Maximum steady state power dissipation

(forward plus leakage current losses,

excluding switching losses) as a function

of average forward current.

handbook, halfpage

0

3

2

1.57

1.42

P

(W)

1

0

1

2

MGC576

IF(AV) (A)

a = 3 2.5

2

Solid line = V

R

.

Dotted line = V

RRM

;

δ

= 0.5.

Fig.7

Maximum permissible junction temperature

as a function of reverse voltage.

handbook, halfpage

0

200

400

800

200

0

MGC575

600

100

Tj

VR (V)

B

A

C

(  C)

o

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1996 Jun 07

6

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYV95 series

Dotted line: T

j

= 175

°

C.

Solid line: T

j

= 25

°

C.

Fig.8

Forward current as a function of forward

voltage; maximum values.

handbook, halfpage

0

1

2

3

8

6

IF

VF (V)

2

0

4

MGC577

(A)

Fig.9

Reverse current as a function of junction

temperature; maximum values.

handbook, halfpage

10

3

10

2

10

1

10

1

200

0

MGC574

100

Tj (  C)

o

IR

(

µ

A)

V

R

= V

RRMmax

.

f = 1 MHz; T

j

= 25

°

C.

Fig.10 Diode capacitance as a function of reverse

voltage; typical values.

handbook, halfpage

1

MGC582

10

10

2

10

3

1

10

2

10

Cd

VR (V)

(pF)

Fig.11  Device mounted on a printed-circuit board.

Dimensions in mm.

handbook, halfpage

MGA200

3

2

7

50

25

50

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1996 Jun 07

7

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYV95 series

Fig.12  Test circuit and reverse recovery time waveform and definition.

Input impedance oscilloscope: 1 M

, 22 pF; t

r

7 ns.

Source impedance: 50

; t

r

15 ns.

handbook, full pagewidth

10 

50 

25 V

DUT

MAM057

+

t rr

0.5

0

0.5

1.0

IF

(A)

IR

(A)

t

0.25

Fig.13  Reverse recovery definitions.

andbook, halfpage

10%

100%

dI

dt

t

trr

IF

IR

MGC499

F

dI

dt

R

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1996 Jun 07

8

Philips Semiconductors

Product specification

Fast soft-recovery

controlled avalanche rectifiers

BYV95 series

PACKAGE OUTLINE

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

Fig.14  SOD57.

Dimensions in mm.

The marking band indicates the cathode.

handbook, full pagewidth

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,



,



3.81

max

MBC880

k

a

28 min

28 min

4.57

max

0.81

max