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DATA  SHEET

Product specification

Supersedes data of 1997 May 28

File under Discrete Semiconductors, SC04

1998 May 19

DISCRETE SEMICONDUCTORS

PDTC114TK

NPN resistor-equipped transistor

book, halfpage

M3D114

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1998 May 19

2

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC114TK

FEATURES

Built-in bias resistor R1 (typ. 10 k

)

Simplification of circuit design

Reduces number of components

and board space.

APPLICATIONS

Especially suitable for space

reduction in interface and driver

circuits

Inverter circuit configurations

without use of an external resistor.

DESCRIPTION

NPN resistor-equipped transistor in

an SC-59 plastic package.

PNP complement: PDTA114TK.

PINNING

PIN

DESCRIPTION

1

base/input

2

emitter/ground

3

collector/output

Fig.1  Simplified outline (SC-59) and symbol.

handbook, halfpage

MAM290

Top view

2

1

3

R1

1

2

3

Fig.2

Equivalent inverter

symbol.

MGA893 - 1

1

3

2

MARKING

TYPE

NUMBER

MARKING

CODE

PDTC114TK

24

QUICK REFERENCE DATA

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

V

CEO

collector-emitter voltage

open base

50

V

I

O

output current (DC)

100

mA

I

CM

peak collector current

100

mA

P

tot

total power dissipation

T

amb

25

°

C

250

mW

h

FE

DC current gain

I

C

= 1 mA; V

CE

= 5 V

200

R1

input resistor

7

10

13

k

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1998 May 19

3

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC114TK

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

amb

= 25

°

C unless otherwise specified.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CBO

collector-base voltage

open emitter

50

V

V

CEO

collector-emitter voltage

open base

50

V

V

EBO

emitter-base voltage

open collector

5

V

I

O

output current (DC)

100

mA

I

CM

peak collector current

100

mA

P

tot

total power dissipation

T

amb

25

°

C; note 1

250

mW

T

stg

storage temperature

65

+150

°

C

T

j

junction temperature

150

°

C

T

amb

operating ambient temperature

65

+150

°

C

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R

th j-a

thermal resistance from junction to ambient

note 1

500

K/W

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CBO

collector cut-off current

I

E

= 0; V

CB

= 50 V

100

nA

I

CEO

collector cut-off current

I

B

= 0; V

CE

= 30 V

1

µ

A

I

B

= 0; V

CE

= 30 V;  T

j

= 150

°

C

50

µ

A

I

EBO

emitter cut-off current

I

C

= 0; V

EB

= 5 V

100

nA

h

FE

DC current gain

I

C

= 1 mA; V

CE

= 5 V

200

V

CEsat

collector-emitter saturation voltage

I

C

= 10 mA; I

B

= 0.5 mA

150

mV

R1

input resistor

7

10

13

k

C

c

collector capacitance

I

E

= I

e

= 0; V

CB

= 10 V;  f = 1 MHz

2.5

pF

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1998 May 19

4

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC114TK

Fig.3

DC current gain as a function of collector

current; typical values.

V

CE

= 5 V.

(1) T

amb

= 150

°

C.

(2) T

amb

= 25

°

C.

(3) T

amb

=

40

°

C.

handbook, halfpage

600

0

10

1

1

10

10

2

MGM902

IC (mA)

hFE

(1)

(2)

(3)

200

400

Fig.4

Collector-emitter saturation voltage as a

function of collector current; typical values.

I

C

/I

B

= 10.

(1) T

amb

= 100

°

C.

(2) T

amb

= 25

°

C.

(3) T

amb

=

40

°

C.

handbook, halfpage

10

1

MGM901

10

2

VCEsat

(V)

(2)

(3)

(1)

10

1

1

10

10

2

IC (mA)

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1998 May 19

5

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC114TK

PACKAGE OUTLINE

UNIT

A

1

b

p

c

D

e

1

H

E

L

p

Q

w

v

 REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

 IEC

 JEDEC

 EIAJ

mm

0.50

0.35

0.26

0.10

3.1

2.7

1.7

1.3

0.95

e

1.9

3.0

2.5

0.33

0.23

0.2

0.2

DIMENSIONS (mm are the original dimensions)

0.6

0.2

 SOT346

TO-236

SC-59

bp

D

e1

e

A

A1

Lp

Q

detail X

HE

E

w

M

v

M

A

B

A

B

0

1

2 mm

scale

A

1.3

1.0

0.1

0.013

c

X

1

2

3

Plastic surface mounted package; 3 leads

SOT346

97-02-28

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1998 May 19

6

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC114TK

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data Sheet Status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

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1998 May 19

7

Philips Semiconductors

Product specification

NPN resistor-equipped transistor

PDTC114TK

NOTES

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Internet: http://www.semiconductors.philips.com

Philips Semiconductors – a worldwide company

© Philips Electronics N.V. 1998

 SCA60

All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner.

The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed

without notice. No liability will be accepted by the publisher for any consequence of its use. Publication thereof does not convey nor imply any license

under patent- or other industrial or intellectual property rights.

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Printed in The Netherlands

115104/1200/02/pp8

 Date of release: 1998 May 19

Document order number:

 9397 750 03899