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DATA  SHEET

Product specification

Supersedes data of 1997 Mar 10

1999 Apr 15

DISCRETE SEMICONDUCTORS

BC327

PNP general purpose transistor

book, halfpage

M3D186

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1999 Apr 15

2

Philips Semiconductors

Product specification

PNP general purpose transistor

BC327

FEATURES

High current (max. 500 mA)

Low voltage (max. 45 V).

APPLICATIONS

General purpose switching and amplification,

e.g. driver and output stages of audio amplifiers.

DESCRIPTION

PNP transistor in a TO-92; SOT54 plastic package.

NPN complement: BC337.

PINNING

PIN

DESCRIPTION

1

emitter

2

base

3

collector

Fig.1

Simplified outline (TO-92; SOT54)

and symbol.

handbook, halfpage

1

3

2

MAM281

3

2

1

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

Note

1. Transistor mounted on an FR4 printed-circuit board.

SYMBOL

PARAMETER

CONDITIONS

MIN.

MAX.

UNIT

V

CBO

collector-base voltage

open emitter

50

V

V

CEO

collector-emitter voltage

open base

45

V

V

EBO

emitter-base voltage

open collector

5

V

I

C

collector current (DC)

500

mA

I

CM

peak collector current

1

A

I

BM

peak base current

200

mA

P

tot

total power dissipation

T

amb

25

°

C; note 1

625

mW

T

stg

storage temperature

65

+150

°

C

T

j

junction temperature

150

°

C

T

amb

operating ambient temperature

65

+150

°

C

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1999 Apr 15

3

Philips Semiconductors

Product specification

PNP general purpose transistor

BC327

THERMAL CHARACTERISTICS

Note

1. Transistor mounted on an FR4 printed-circuit board.

CHARACTERISTICS

T

j

= 25

°

C unless otherwise specified.

Note

1. V

BE

 decreases by about

2 mV/K with increasing temperature.

SYMBOL

PARAMETER

CONDITIONS

VALUE

UNIT

R

th j-a

thermal resistance from junction to ambient

note 1

0.2

K/mW

SYMBOL

PARAMETER

CONDITIONS

MIN.

TYP.

MAX.

UNIT

I

CBO

collector cut-off current

I

E

= 0; V

CB

=

20 V

100

nA

I

E

= 0; V

CB

=

20 V; T

j

= 150

°

C

5

µ

A

I

EBO

emitter cut-off current

I

C

= 0; V

EB

=

5 V

100

nA

h

FE

DC current gain

I

C

=

100 mA; V

CE

=

1 V;

see Figs 2, 3 and 4

BC327

100

600

BC327-16

100

250

BC327-25

160

400

BC327-40

250

600

h

FE

DC current gain

I

C

=

500 mA; V

CE

=

1 V;

see Figs 2, 3 and 4

40

V

CEsat

collector-emitter saturation voltage

I

C

=

500 mA; I

B

=

50 mA

700

mV

V

BE

base-emitter voltage

I

C

=

500 mA; V

CE

=

1 V; note 1

1.2

V

C

c

collector capacitance

I

E

= i

e

= 0; V

CB

=

10 V; f = 1 MHz

10

pF

f

T

transition frequency

I

C

=

10 mA; V

CE

=

5 V;

f = 100 MHz

80

MHz

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1999 Apr 15

4

Philips Semiconductors

Product specification

PNP general purpose transistor

BC327

Fig.2  DC current gain; typical values.

BC327-16.

handbook, full pagewidth

0

250

50

100

150

200

MBH717

10

1

1

hFE

10

IC (mA)

10

2

10

3

VCE = 

1 V

Fig.3  DC current gain; typical values.

BC327-25.

handbook, full pagewidth

0

500

100

200

300

400

MBH718

10

1

1

hFE

10

IC (mA)

10

2

10

3

VCE = 

1 V

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1999 Apr 15

5

Philips Semiconductors

Product specification

PNP general purpose transistor

BC327

Fig.4  DC current gain; typical values.

BC327-40.

handbook, full pagewidth

0

500

100

200

300

400

MBH719

10

1

1

hFE

10

IC (mA)

10

2

10

3

VCE = 

1 V

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1999 Apr 15

6

Philips Semiconductors

Product specification

PNP general purpose transistor

BC327

PACKAGE OUTLINE

UNIT

A

 REFERENCES

OUTLINE

VERSION

EUROPEAN

PROJECTION

ISSUE DATE

 IEC

 JEDEC

 EIAJ

mm

5.2

5.0

b

0.48

0.40

c

0.45

0.40

D

4.8

4.4

d

1.7

1.4

E

4.2

3.6

L

14.5

12.7

e

2.54

e1

1.27

L1

(1)

2.5

b1

0.66

0.56

DIMENSIONS (mm are the original dimensions)

Note

1. Terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities.

 SOT54

TO-92

SC-43

97-02-28

A

L

0

2.5

5 mm

scale

b

c

D

b

1

L1

d

E

Plastic single-ended leaded (through hole) package; 3 leads

SOT54

e1

e

1

2

3

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1999 Apr 15

7

Philips Semiconductors

Product specification

PNP general purpose transistor

BC327

DEFINITIONS

LIFE SUPPORT APPLICATIONS

These products are not designed for use in life support appliances, devices, or systems where malfunction of these

products can reasonably be expected to result in personal injury. Philips customers using or selling these products for

use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such

improper use or sale.

Data sheet status

Objective specification

This data sheet contains target or goal specifications for product development.

Preliminary specification

This data sheet contains preliminary data; supplementary data may be published later.

Product specification

This data sheet contains final product specifications.

Limiting values

Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or

more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation

of the device at these or at any other conditions above those given in the Characteristics sections of the specification

is not implied. Exposure to limiting values for extended periods may affect device reliability.

Application information

Where application information is given, it is advisory and does not form part of the specification.

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© Philips Electronics N.V. 1999

 SCA63

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Printed in The Netherlands

115002/00/03/pp8

 Date of release: 1999 Apr 15

Document order number:

 9397 750 05675