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Low-Drop Voltage Regulator

 TLE 4276

Semiconductor Group

1

1998-11-01

Features

• Output voltage tolerance

≤ ±

4%

• Low-drop voltage

• Inhibit input

• Very low current consumption

• Short-circuit-proof

• Reverse polarity proof

• Suitable for use in automotive electronics

 

 

SMD = Surface Mounted Device

w

 

New type

Type

Ordering Code Package

TLE 4276 V50

Q67000-A9262 P-TO220-5-3

TLE 4276 V85

Q67000-A9263 P-TO220-5-3

TLE 4276 V10

Q67000-A9264 P-TO220-5-3

TLE 4276 G V50 Q67006-A9266 P-TO220-5-122

TLE 4276 G V85 Q67006-A9268 P-TO220-5-122

TLE 4276 G V10 Q67006-A9270 P-TO220-5-122

TLE 4276 S V50 Q67000-A9267 P-TO220-5-43

TLE 4276 S V85 Q67000-A9269 P-TO220-5-43

TLE 4276 S V10 Q67000-A9271 P-TO220-5-43

TLE 4276 V

Q67000-A9265 P-TO220-5-3

TLE 4276 SV

Q67000-A9273 P-TO220-5-43 

TLE 4276 GV

Q67006-A9272 P-TO220-5-122

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TLE 4276 D V50 Q67006-A9358 P-TO252-5-1

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TLE 4276 DV

Q67006-A9361 P-TO252-5-1

    

   

     

P-TO220-5-3

P-TO220-5-43

P-TO220-5-122

P-TO252-5-1 (D-PAK)

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TLE 4276

Semiconductor Group

2

1998-11-01

Functional Description

The TLE 4276 is a low-drop voltage regulator in a TO220 package. The IC regulates an

input voltage up to 40 V to 

V

Qrated

= 5.0 V (V50), 8.5 V (V85), 10 V (V10) and adjustable

voltage (V). The maximum output current is 400 mA. The IC can be switched off via the

inhibit input, which causes the current consumption to drop below 10

µ

A. The IC is short-

circuit-proof and incorporates temperature protection that disables it at over-tempera-

ture.

Dimensioning Information on External Components

The input capacitor 

C

is necessary for compensating line influences. Using a resistor of

approx. 1

 in series with 

C

I

, the oscillating of input inductivity and input capacitance can

be damped. The output capacitor 

C

is necessary for the stability of the regulation circuit.

Stability is guaranteed at values 

C

Q

22

µ

F and an ESR of

3

 within the operating

temperature range.

Circuit Description

The control amplifier compares a reference voltage to a voltage that is proportional to the

output voltage and drives the base of the series transistor via a buffer. Saturation control

as a function of the load current prevents any oversaturation of the power element. The

IC also incorporates a number of internal circuits for protection against:

• Overload

• Overtemperature

• Reverse polarity

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TLE 4276

Semiconductor Group

3

1998-11-01

Pin Configuration

(top view)

            

Figure 1

      

Pin Definitions and Functions

Pin No.

Symbol Function

1

I

Input; block to ground directly at the IC with a ceramic capacitor.

2

INH

Inhibit; low-active input

3

GND

Ground

4

N.C.

VA

Not connected for V50, V85, V10

Voltage Adjust Input; only for adjustable output from external 

voltage divider.

5

Q

Output; block to ground with a

22

µ

F capacitor.

Q

Ι

GND

N.C.

INH

1

5

AEP02041

(VA)

GND

Ι

INH

(VA)

AEP02042

N.C.

Q

1

5

1

5

GND

INH

Ι

AEP02043

N.C.

Q

AEP02560

1

5

INH

Ι

N.C.

Q

(VA)

GND

P-TO220-5-3

P-TO220-5-43

P-TO252-5-1

P-TO220-5-122

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TLE 4276

Semiconductor Group

4

1998-11-01

        

Figure 2

Block Diagram       

Ι

1

AEB02044

GND

3

Q

6

Bandgap

Reference

Control

Amplifier

Sensor

Temperature

Buffer

Saturation

Control and

Protection

Circuit

VA

4

INH

2

*)

**)

For fixed Voltage Regulator only

For adjustable Voltage Regulator only

**)

*)

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TLE 4276

Semiconductor Group

5

1998-11-01

Note: Maximum ratings are absolute ratings; exceeding any one of these values may

cause irreversible damage to the integrated circuit.

   

Absolute Maximum Ratings

T

j

= – 40 to 150

°

C

Parameter

Symbol

Limit Values

Unit Test Condition

min.

max.

Voltage Regulator

Input

Voltage

V

I

– 42

45

V

Current

I

I

Internally limited

Inhibit

Voltage

V

INH

– 42

45

V

Voltage Adjust Input

Voltage

V

VA

– 0.3

10

V

Output

Voltage

V

Q

– 1.0

40

V

Current

I

Q

Internally limited

Ground

Current

I

GND

100

mA

Temperature

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

– 50

150

°

C

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TLE 4276

Semiconductor Group

6

1998-11-01

  

Operating Range

Parameter

Symbol

Limit Values

Unit Remarks

min.

max.

Input voltage

V

I

V

Q

+ 0.5

40

V

Junction temperature

T

j

– 40

150

°

C

Thermal Resistance

Junction ambient

R

thja

65

K/W TO220

Junction ambient

R

thja

70

K/W TO252

1)

, TO263

Junction case

R

thjc

4

K/W –

1)

 Soldered in, minimal footprint

Characteristics

V

I

= 13.5 V;   – 40

°

C <

T

j

< 150

°

C (unless otherwise specified)

Parameter

Symbol

Limit Values

Unit Measuring 

Condition

Measuring 

Circuit

min.

typ.

max.

Output voltage

V

Q

4.8

5

5.2

V

V50-Version

5 mA <

I

Q

< 400 mA

6 V <

V

I

< 40 V

1

Output voltage

V

Q

8.16

8.5

8.84

V

V85-Version

5 mA <

I

Q

< 400 mA

9.5 V <

V

I

< 40 V

1

Output voltage

V

Q

9.6

10

10.4

V

V10-Version

5 mA <

I

Q

< 400 mA

11 V <

V

I

< 40 V

1

Output voltage 

tolerance

V

Q

– 4

4

%

V-Version

V

V.A.

= 2.5 V

1

Output current 

limitation

1)

I

Q

400

600

mA

1

Current 

consumption; 

I

q

=

I

I

I

Q

I

q

0

10

µ

A

V

INH

= 0 V; 

T

j

100

°

C

1

Current 

consumption; 

I

q

=

I

I

I

Q

I

q

100

220

µ

A

I

Q

= 1 mA

1

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TLE 4276

Semiconductor Group

7

1998-11-01

Current 

consumption; 

I

q

=

I

I

I

Q

I

q

I

q

5

15

10

25

mA

mA

I

Q

= 250 mA

I

Q

= 400 mA

1

1

Drop voltage

1)

V

DR

250

500

mV

I

Q

= 250 mA 

V

DR

=

V

I

V

Q

1

Load 

regulation

V

Q

5

35

mV

I

Q

= 5 mA to 

400 mA

1

Line 

regulation

V

Q

10

25

mV

V

l

= 12 V to 32V

I

Q

= 5 mA

1

Power supply 

ripple rejection

PSRR

60

dB

f

r

= 100 Hz; 

V

r

= 0.5

V

SS

1

Temperature 

output voltage 

drift

dV

Q

dT

0.5

mV/K

1)

 Measured when the output voltage 

V

has dropped 100 mV from the nominal value obtained at 

V

I

 = 13.5 V.

Inhibit

Inhibit on 

voltage

V

INH

2

3.5

V

V

Q

 

 4.9 V

1

Inhibit off 

voltage

V

INH

0.5

1.7

V

V

Q

 

 0.1 V

1

Input current

I

INH

5

10

20

µ

A

V

INH

= 5 V

1

Characteristics (cont’d)

V

I

= 13.5 V;   – 40

°

C <

T

j

< 150

°

C (unless otherwise specified)

Parameter

Symbol

Limit Values

Unit Measuring 

Condition

Measuring 

Circuit

min.

typ.

max.

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TLE 4276

Semiconductor Group

8

1998-11-01

            

Figure 3

Measuring Circuit

    

Figure 4

Application Circuit

100   F

*) Optional for adjustable Voltage Regulator

V

Ι

Input

µ

Ι

Ι

100 nF

INH

INH

V

Ι

2

1

TLE 4276

3

R

AES02045

4

*)

5

Adjust

Voltage

22   F

µ

Q

C

Ι

Q

Output

R

R

*)

2

*)

1

V

Q

L

*) Optional for adjustable Voltage Regulator

Input

e.g. KL 15

TLE 4276

3

C

2

Ι

1

Adjust

4

*)

5

C

Voltage

Q

*)

R

AES02046

2

Output

R

1

*)

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Semiconductor Group

9

1998-11-01

TLE 4276

Drop Voltage 

V

DR

 versus 

Output Current 

I

Q

     

Current Consumption 

I

q

 versus 

Output Current

 I

Q

 (high load)     

Max. Output Current 

I

Q

 versus 

Input Voltage 

V

I

      

Current Consumption 

I

q

 versus 

Output Current 

I

Q

 (low load)   

0

0

100

400

600

200

V

dr

mV

400

200

Ι

Q

mA

AED01962

j

T = 25   C

V

dr

=

QNOM-0.1 V

V

j

T = 125   C

300

100

300

0

0

200

40

60

20

mA

600

400

Ι

Q

mA

AED01964

V

Ι

q

Ι

= 13.5 V

T = 25  C

j

100

300

10

30

20

0

10

0

mA

800

Q

Ι

= 25   C

T

j

50

V

30

40

V

Ι

AED01963

200

400

600

= 0 V

V

Q

30

0

0

10

20

mA

40

60

Q

Ι

0.1

0.2

0.3

mA

0.6

0.4

Ι

q

AED01965

T

V

= 25  C

= 13.5 V

Ι

j

Typical Performance Characteristics (V50, V85 and V10):

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Semiconductor Group

10

1998-11-01

TLE 4276

Output Voltage 

V

Q

 versus

Temperature 

T

j

   

  

Low Voltage Behavior   

Current Consumption 

I

q

 versus 

Input Voltage 

V

I

     

 

High Voltage Behavior  

4.90

4.80

4.70

40

-40

0

4.60

5.00

V

5.20

5.10

Q

160

  C

80

120

T

j

AED01966

V

Ι

= 13.5 V

V

3

2

1

4

0

2

0

4

V

6

5

Q

10

6

8

V

Ι

AED01968

V

V

V

Q

V

Ι

V

Q

=

= 20

= 25   C

R

L

j

T

0

0

20

30

10

mA

50

AED01967

q

Ι

10

20

30

V

R

L

=

20

V

Ι

T

j

= 25  C

1.5

0.5

0

-2

1.0

2.0

2.5

3.0

3.5

mA

Ι

AED01969

V

Ι

50

25

0

-25

-50

V

Ι

= 25   C

= 3.3 k

j

R

T

L

Typical Performance Characteristics for V50:

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Semiconductor Group

11

1998-11-01

TLE 4276

Output Voltage 

V

Q

 versus

Temperature 

T

j

   

  

Low Voltage Behavior   

Current Consumption 

I

q

 versus 

Input Voltage 

V

I

     

 

High Voltage Behavior  

7.5

8.0

0

-40

40

9.0

8.5

Q

V

= 13.5 V

V

Ι

V

120

80

  C 160

T

j

AED01970

6

4

0

8

0

2

4

R

T

Q

V

Q

V

8

Ι

= V

V

10

12

V

16

12

20

V

Ι

= 25   C

= 34

L

j

AED01972

Q

V

0

0

20

30

10

mA

50

AED01971

q

Ι

10

20

30

V

V

Ι

= 25  C

L

T

R

j

= 20

0

1.5

1.0

0.5

-50

-25

-2

0

mA

3.5

3.0

2.5

2.0

Ι

Ι

T

R

j

L

= 25   C

= 8.5 k

V

25

50

V

Ι

AED01973

Typical Performance Characteristics for V85:

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Semiconductor Group

12

1998-11-01

TLE 4276

Output Voltage 

V

Q

 versus

Temperature 

T

j

   

  

Low Voltage Behavior   

Current Consumption 

I

q

 versus 

Input Voltage 

V

I

     

 

High Voltage Behavior  

9.0

9.5

0

-40

40

10.5

10.0

Q

V

= 13.5 V

V

Ι

V

120

80

  C 160

T

j

AED01974

6

4

0

8

0

2

4

R

T

Q

V

Q

V

8

Ι

= V

V

10

12

V

16

12

20

V

Ι

= 25   C

= 34

L

j

AED01976

Q

V

0

0

20

30

10

mA

50

AED01975

q

Ι

10

20

30

V

R

L

= 20

V

Ι

T

j

= 25  C

0

1.5

1.0

0.5

-50

-25

-2

0

mA

3.5

3.0

2.5

2.0

Ι

Ι

T

R

j

L

= 25   C

= 10 k

V

25

50

V

Ι

AED01977

Typical Performance Characteristics for V10:

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TLE 4276

Semiconductor Group

13

1998-11-01

Package Outlines

P-TO220-5-3

(Plastic Transistor Single Outline)

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our 

Data Book “Package Information”

Dimensions in mm

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TLE 4276

Semiconductor Group

14

1998-11-01

    

P-TO220-5-43

(Plastic Transistor Single Outline)

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TLE 4276

Semiconductor Group

15

1998-11-01

       

P-TO220-5-122

(Plastic Transistor Single Outline)

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our 

Data Book “Package Information”.

Dimensions in mm

SMD = Surface Mounted Device

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TLE 4276

Semiconductor Group

16

1998-11-01

P-TO252-5-1

(Plastic Transistor Single Outline)

GPT09161

5.4

±0.1

-0.10

6.5

+0.15

A

±0.5

9.9

6.22

-0.2

1

±0.1

±0.15

0.8

0.15 max

±0.1

per side

5x0.6

1.14

4.56

+0.08

-0.04

0.9

2.3

-0.10

+0.05

B

0.51 min

±0.1

1

+0.08

-0.04

0.5

0...0.15

B

A

0.25

M

0.1

All metal surfaces tin plated, except area of cut.

(4.17)

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our 

Data Book “Package Information”.

Dimensions in mm

SMD = Surface Mounted Device