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TLE 4264 G

Semiconductor Group

1

1998-11-01

  

Functional Description

TLE 4264 G is a 5-V low-drop fixed-voltage regulator in an SOT-223 package. The IC

regulates an input voltage 

V

I

 in the range 5.5 V < 

V

I

 < 45 V to 

V

Qrated

 = 5.0 V. The

maximum output current is more than 120 mA. This IC is shortcircuit-proof and features

temperature protection that disables the circuit at overtemperature.

Dimensioning Information on External Components

The input capacitor 

C

i

 is necessary for compensating line influences. Using a resistor of

approx. 1

 in series with 

C

i

, the oscillating of input inductivity and input capacitance can

be clamped. The output capacitor 

C

Q

 is necessary for the stability of the regulating

circuit. Stability is guaranteed at values 

C

Q

 

 10

µ

F and an ESR 

 10 

 within the

operating temperature range.

Type

Ordering Code

Package

TLE 4264 G

Q67006-A9139

P-SOT223-4-1 (SMD)

5-V Low-Drop Fixed-Voltage Regulator

       

 

P-SOT223-4-1

Features

q

Output voltage tolerance 

≤ ±

 2 %

q

Low-drop voltage

q

Very low current consumption

q

Overtemperature protection

q

Short-circuit proof

q

Suitable for use in automotive electronics

q

Reverse polarity

       

TLE 4264 G

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TLE 4264 G

Semiconductor Group

2

1998-11-01

Pin Configuration 

(top view)

         

 

   

Circuit Description

The control amplifier compares a reference voltage, which is kept highly precise by

resistance adjustment, to a voltage that is proportional to the output voltage and drives

the base of the series transistor via a buffer. Saturation control, working as a function of

load current, prevents any over-saturation of the power element. The IC is additionally

protected against overload, overtemperature and reverse polarity.

Pin Definitions and Functions

Pin

Symbol

Function

1

V

I

Input voltage; block to ground directly on IC with 

ceramic capacitor

2, 4

GND

Ground

3

V

Q

5-V output voltage; block to ground with 

 10-

µ

capacitor, ESR < 10 

AEP01526

1

2

3

4

GND

V

Q

Ι

V

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TLE 4264 G

Semiconductor Group

3

1998-11-01

Block Diagram              

Saturation

Control and

Protection

Temperature

Sensor

Adjustment

Bandgap

Reference

3

2,4

1

Input

GND

Output

AEB01527

Circuit

Amplifier

Control

Buffer

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TLE 4264 G

Semiconductor Group

4

1998-11-01

Absolute Maximum Ratings

T

j

 = – 40 to 150

°

C

Parameter

Symbol

Limit Values

Unit

Notes

min.

max.

Input

Input voltage

V

– 42

45

V

Input current

I

I

limited internally

Output

Output voltage

V

Q

– 1

16

V

Output current

I

Q

limited internally

Ground

Current

I

GND

50

mA

Temperatures

Junction temperature

T

j

150

°

C

Storage temperature

T

stg

– 50

150

°

C

Operating Range

Input voltage

V

I

 5.5

45

V

Junction temperature

T

j

– 40

150

°

C

Thermal Resistances

System-air

R

th SA

100

K/W

soldered in

System-case

R

th SC

25

K/W

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TLE 4264 G

Semiconductor Group

5

1998-11-01

Characteristics

V

I

 = 13.5 V; – 40

°

C

 ≤

T

j

 

≤ 

125

°

C, unless specified otherwise

Parameter

Symbol

Limit Values

Unit

Test Conditions

min.

typ.

max.

Output voltage

V

Q

4.9

5.0

5.1

V

5 mA 

 I

Q

 

≤ 

100 mA

6 V

 ≤

 V

I

 

≤ 

28 V

Output-current 

limiting

I

Q

120

150

mA

Current consumption

I

q

 = 

I

I

 –

I

Q

I

q

400

µ

A

I

Q

 = 1 mA

Current consumption

I

q

 = 

I

I

 –

I

Q

I

q

10

15

mA

I

Q

 = 100 mA

Drop voltage

V

dr

0.25

0.5

V

I

Q

 = 100 mA

1)

Load regulation

V

Q

40

mV

I

Q

 = 5 to 100 mA

V

I

 = 6 V

Supply-voltage

regulation

V

Q

15

30

mV

V

= 6 to 28 V

I

Q

 = 5 mA

Supply voltage 

suppression

SVR

54

dB

f

r

 = 100 Hz

V

= 0.5 Vpp

1)

Drop voltage = 

V

I

  –

V

Q

 (measured where 

V

Q

 has dropped 100 mV from the nominal value

obtained at

 V

I

 = 13.5 V)

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TLE 4264 G

Semiconductor Group

6

1998-11-01

Application Circuit  

AES01528

TLE 4264G

Output

3

2,4

1

µ

10   F

Input

5.5 to 45 V

C

i

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Semiconductor Group

7

1998-11-01

TLE 4264 G

Drop Voltage 

V

Dr

 versus

Output Current 

I

Q

      

Current Consumption 

I

q

 versus

Output Current 

I

Q

      

Current Consumption 

I

q

 versus

Input Voltage 

V

i

      

Current Consumption 

I

q

 versus

Output Current 

I

Q

       

Dr

V

Ι

Q

0

25

100

200

300

400

500

600

mV

800

50

100

mA

175

75

125

=

C

125

25 C

=

700

j

T

j

T

Ι

Q

0

0

AED01980

mA

150

50

100

Ι

q

2

4

6

8

mA

12

V

i

= 13.5 V

10

0

0

AED01979

R =

Ι

q

V

L

50

10

20

30

V 50

5

10

mA

15

100

L

=

R

i

40

Ι

Q

0

0

AED01981

mA

30

10

20

Ι

q

0.5

1.0

1.5

2.0

mA

3.0

V

i

= 13.5 V

5

15

2.5

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Semiconductor Group

8

1998-11-01

TLE 4264 G

Output Voltage 

V

Q

 versus

Temperature 

T

j

      

Output Voltage 

V

Q

 versus

Input Voltage 

V

i

  

Output Current 

I

Q

 versus

Input Voltage 

V

i

    

4.60

-40

AED01982

V

Q

0

40

80

160

4.80

5.00

V

5.20

120 C

4.70

4.90

5.10

i

V = 13.5 V

j

T

0

0

AED01984

V

Q

2

4

6

10

2

4

V

6

8

1

3

5

L

R = 50

i

V

V

0

0

AED01983

=

C

125

25 C

=

Q

Ι

V

i

10

20

30

40

50

50

100

150

200

mA

V

j

T

j

T

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TLE 4264 G

Semiconductor Group

9

1998-11-01

Package Outlines 

     

 

±0.1

±0.2

±0.1

0.7

4

3

2

1

6.5

3

acc. to

+0.2

DIN 6784

1.6

±0.1

15˚max

±0.04

0.28

7

±0.3

±0.2

3.5

0.5

0.1 max

min

B

M

0.25

B

A

2.3

4.6

A

M

0.25

P-SOT223-4-1

(Plastic Small Outline Transistor)

Weight approx. 0.15 g

GPS

055

60

Sorts of Packing

Package outlines for tubes, trays etc. are contained in our 

Data Book “Package Information”

Dimensions in mm

SMD = Surface Mounted Device