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SHINDENGEN

2SK2198

Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

OUTLINE DIMENSIONS

RATINGS

(F30Z50VX2)

500V 30A

Case : E-pack

VX-2 Series Power MOSFET

N-Channel Enhancement type

(Unit : mm)

Case : MTO-3L

Switching power supply of AC 100V input

High voltage power supply

Inverter

APPLICATION

Input capacitance (Ciss) is small.

    Especially, input capacitance

    at 0 biass is small.

The static Rds(on) is small.

The switching time is fast.

FEATURES

●Absolute Maximum Ratings  (Tc = 25℃)

Item

Symbol

Conditions

Ratings

Unit

Storage Temperature

T

stg

-55~150

Channel Temperature

T

ch

150

Drain-Source Voltage

V

DSS

500

V

Gate-Source Voltage

V

GSS

±30

Continuous Drain Current(DC)

I

D

30

Continuous Drain Current(Peak)

I

DP

90

A

Continuous Source Current(DC)

I

S

30

Total Power Dissipation

P

T

220

W

Single Pulse Avalanche Current

I

AS

T

ch 

= 25℃

30

A

Mounting Torque

TOR

( Recommended torque :  0.5N・m )

0.8

N・m

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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

2SK2198 ( F30Z50VX2 )

VX-2 Series Power MOSFET

●Electrical Characteristics   Tc = 25℃

Item

Symbol

Conditions

Min.

Typ.

Max.

Unit

Drain-Source Breakdown Voltage

V

(BR)DSS

I

D

 = 1mA,  V

GS

 = 0V

500

V

Zero Gate Voltage Drain Current

I

DSS

V

DS

 = 500V,  V

GS

 = 0V

250

μA

Gate-Source Leakage Current

I

GSS

V

GS

 = ±30V,  V

DS

 = 0V

±0.1

Forward Transconductance

g

fs

I

D

 = 15A,  V

DS

 = 10V

9

20

S

Static Drain-Source On-state Resistance

R

DS(ON)

I

= 15A,  V

GS

 = 10V

0.16

0.23

Ω

Gate Threshold Voltage

V

TH

I

D

 = 3mA,  V

DS

 = 10V

2.5

3.0

3.5

V

Source-Drain Diode Forwade Voltage

V

SD

I

= 15A,  V

GS

 = 0V

1.5

Thermal Resistance

θjc

junction to case

0.568 ℃/W

Total Gate Charge

Q

g

V

DD

 = 400V,  V

GS

 = 10V,  I

D

 = 30A

125

nC

Input Capacitance

C

iss

3700

Reverse Transfer Capacitance

C

rss

V

DS

 = 10V,  V

GS

 = 0V,  f = 1MH

Z

230

pF

Output Capacitance

C

oss

770

Turn-On Time

t

on

I

D

 = 15A,  V

GS

 = 10V,  R

L

 = 10Ω

200

375

ns

Turn-Off Time

t

off

500

900

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0

10

20

30

40

50

60

0

5

10

15

20

2SK2198

Transfer Characteristics

V

DS

 = 25V

pulse test

TYP

Tc = 

55

°

C

25

°

C

100

°

C

150

°

C

Gate-Source Voltage  V

GS

  [V]

Drain Current  I

D

  [A]

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Static Drain-Source On-state Resistance

0.01

0.1

1

-50

0

50

100

150

2SK2198

V

GS

 = 10V

pulse test

TYP

I

D

 = 15A

Case Temperature  Tc  [

°

C]

Static Drain-Source On-state Resistance  R

DS(ON)

  [

]

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Gate Threshold Voltage

0

1

2

3

4

5

-50

0

50

100

150

2SK2198

V

DS

 = 10V

I

D

 = 3mA

TYP

Case Temperature  Tc  [

°

C]

Gate Threshold Voltage  V

TH

  [V]

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Safe Operating Area

0.1

1

10

100

1

10

100

1000

2SK2198

100

µ

s

Tc = 25

°

C

Single Pulse

200

µ

s

1ms

10ms

DC

Drain-Source Voltage  V

DS

  [V]

Drain Current  I

D

  [A]

R

DS(ON)

limit

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0.001

0.01

0.1

1

10

2SK2198

10

-4

10

-3

10

-2

10

-1

10

0

10

1

Transient Thermal Impedance

Time  t  [s]

Transient Thermal Impedance  

θ

jc(t)  [

°

C/W]

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Capacitance

10

100

1000

10000

0

20

40

60

80

100

2SK2198

0.005

Tc=25

°

C

TYP

Ciss

Coss

Crss

Drain-Source Voltage  V

DS

  [V]

Capacitance  Ciss  Coss  Crss  [pF]

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0

20

40

60

80

100

0

50

100

150

2SK2198

Power Derating

Power Derating  [%]

Case Temperature  Tc  [

°

C]

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0

100

200

300

400

500

0

50

100

150

200

2SK2198

0

5

10

15

20

200V

Gate Charge Characteristics

I

D

 = 30A

100V

V

DD

 = 400V

V

GS

V

DS

Gate Charge  Qg  [nC]

Drain-Source Voltage  V

DS

  [V]

Gate-Source Voltage  V

GS

  [V]