Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd
RATINGS
SHINDENGEN
OUTLINE DIMENSIONS
Unit : mm
Case : MTO-3P
FX Series
Switching Power Transistor
10A NPN
2SC4058
(T10W45FX)
â—
Absolute Maximum Ratings
Item
Symbol
Conditions
Ratings
Unit
Storage Temperature
Tstg
-55
～1
50
℃
Junction Temperature
Tj
1
50
℃
Collector to Base Voltage
V
CBO
600
V
Collector to Emitter Voltage
V
CEO
450
V
V
CEX
V
EB
= 5V
600
Emitter to Base Voltage
V
EBO
7
V
Collector Current DC
I
C
1
0
A
Collector Current Peak
I
CP
20
Base Current DC
I
B
4
A
Base Current Peak
I
BP
8
Total Transistor Dissipation
P
T
Tc = 25
℃
1
00
W
Mounting Torque
TOR
0.8
N
ï½¥
m
â—
Electrical Characteristics (Tc=25
℃
)
Item
Symbol
Conditions
Ratings
Unit
Collector to Emitter Sustaining Voltage
V
CEO
(sus)
I
C
= 0.2A
Min 450
V
Collector Cutoff Current
I
CBO
At rated Voltage
Max 0.
1
mA
I
CEO
Max 0.
1
Emitter Cutoff Current
I
EBO
At rated Voltage
Max 0.
1
mA
DC Current Gain
h
FE
V
CE
= 5V, I
C
= 5A
Min
1
0
h
FEL
V
CE
= 5V, I
C
=
1
mA
Min 5
Collector to Emitter Saturation Voltage
V
CE
(sat)
I
C
= 5A
Max
1
.0
V
Base to Emitter Saturation Voltage
V
BE
(sat)
I
B
=
1
A
Max
1
.5
V
Thermal Resistance
θ
jc
Junction to case
Max
1
.25
℃
/W
Transition Frequency
f
T
V
CE
=
1
0V, I
C
=
1
A
STD 20
MHz
Turn on Time
ton
I
C
= 5A
Max 0.5
Storage Time
ts
I
B
1
=
1
A, I
B2
= 2A
Max 2.0
μ
s
Fall Time
tf
R
L
= 30
Ω
, V
BB2
= 4V
Max 0.2
0
0.5
1
1.5
2
2.5
3
2SC4058
0.01
0.1
1
0
0.5
1
1.5
2
2.5
3
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
I
C
= 1A
3A
5A
8A
10A
15A
Tc = 25
°
C
Saturation Voltage
I
C
= 1A
3A
5A
8A
10A
15A
8
Base Current I
B
[A]
Collector-Emitter Voltage V
CE
[V]
Base-Emitter Voltage V
BE
[V]
0.01
0.1
1
0
2
4
6
8
10
2SC4058
I
B1
= 0.2I
C
I
B2
= 0.4I
C
V
BB2
= 4V
V
CE (clamp)
= 300V
Tc = 25
°
C
t
s
t
f
+ t
vs
t
f
L-Load Switching Time - I
C
Switching Time t
SW
[
µ
s]
Collector Current I
C
[A]
0.01
0.1
1
0
2
4
6
8
10
2SC4058
I
B1
= 0.2I
C
I
B2
= 0.4I
C
V
BB2
= 4V
V
CE (clamp)
= 300V
Tc = 100
°
C
t
s
t
f
+ t
vs
t
f
L-Load Switching Time - I
C
(At High Temperature)
Switching Time t
SW
[
µ
s]
Collector Current I
C
[A]
Transient Thermal Impedance
0.01
0.1
1
10
2SC4058
10
-5
10
-4
10
-3
10
-2
10
-1
10
0
10
1
0.05
0.5
0.2
20
50
5
2
200
500
2000
5000
0.02
0.05
0.5
0.2
20
5
2
0.005
0.002
Time t [s]
Transient Thermal Impedance
θ
jc(t) [
°
C/W]
Forward Bias SOA
0.01
0.1
1
10
1
10
100
2SC4058
50
µ
s
Tc = 25
°
C
Single Pulse
150
µ
s
1ms
10ms
DC
20
450
Collector-Emitter Voltage V
CE
[V]
Collector Current I
C
[A]
0
20
40
60
80
100
0
50
100
150
2SC4058
Collector Current Derating
Collector Current Derating [%]
V
CE
= fixed
P
T
limit
I
S/B
limit
Case Temperature Tc [
°
C]
0
5
10
15
20
0
100
200
300
400
500
600
2SC4058
I
B1
= 0.3I
C
I
B2
= 3.0A
V
BB2
= 5V
Tc < 150
°
C
Reverse Bias SOA
Collector-Emitter Voltage V
CE
[V]
Collector Current I
C
[A]
