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Copyright & Copy;2000 Shindengen Electric Mfg.Co.Ltd

RATINGS

SHINDENGEN

OUTLINE DIMENSIONS

 Unit : mm

Case : TO-220

Darlington Transistor

5A NPN

2SD1022

(T5L10)

●Absolute Maximum Ratings 

Item

Symbol

Conditions

Ratings

Unit

Storage Temperature

Tstg

-55∼+150

Junction Temperature

Tj

+150

Collector to Base Voltage

V

CBO

100

V

Collector to Emitter Voltage

V

CEO

100

V

Emitter to Base Voltage

V

EBO

7

V

Collector Current  DC

I

C

5

A

Collector Current  Peak

I

CP

8

A

Base Current  DC

I

B

0.5

A

Base Current  Peak

I

BP

1

A

Total Transistor Dissipation

P

T

Tc = 25℃

30

W

Mounting Torque

TOR

(Recommended torque : 0.3N・m)

0.5

N・m

●Electrical Characteristics (Tc=25℃) 

Item

Symbol

Conditions

Ratings

Unit

Collector Cutoff Current

I

CBO

V

CB

 = 100V

Max 0.1

mA

I

CEO

V

CE

 = 100V

Max 0.1

Emitter Cutoff Current

I

EBO

V

EB

 = 7V

Max 5

mA

DC Current Gain

h

FE

V

CE 

= 3V, I

C

 = 3A

Min 1,500

Max 30,000

Collector to Emitter Saturation Voltage

V

CE

(sat)

I

C

 = 3A

Max 1.5

V

Base to Emitter Saturation Voltage

V

BE

(sat)

I

B

 = 3mA

Max 2.0

V

Thermal Resistance

θjc

Junction to case 

Max 4.17

℃/W

Transition Frequency

f

T

V

CE 

= 10V, I

C

 = 0.5A

TYP 20

MHz

Turn on Time 

ton

Max 2

I

C

 = 5A

Storage Time 

ts

I

B1

 = I

B2

 = 5mA

Max 5

μs

R

L

 = 5Ω

Fall Time 

tf

V

BB2

 = 4V

Max 3

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100

1000

10000

2SD1022

0.1

1

V

CE

 = 3V

Pulse width = 300

µ

s

h

FE

 - I

C

Tc = 150

°

C

100

°

C

50

°

C

25

°

C

0

°

C

25

°

C

55

°

C

8

Collector Current  I

C

  [A]

DC Current Gain  h

FE

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0

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

2SD1022

1

10

100

0

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

0.05

0.5

0.2

20

50

5

2

200

500

2000

5000

0.02

0.05

0.5

0.2

20

5

2

0.005

0.002

I

C

 = 0.5A

1A

3A

5A

8A

Tc = 25

°

C

Pulse measurement

Saturation Voltage

I

C

 = 0.5A

1A

3A

5A

8A

Base Current  I

B

  [mA]

Collector-Emitter Voltage  V

CE

  [V]

Base-Emitter Voltage  V

BE

  [V]

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1

10

0

1

2

3

4

5

2SD1022

I

B1

 = 0.001I

C

I

B2

 = 0.001I

C

V

BB2

 = 4V

V

CC

 = 50V

Tc = 25

°

C

t

s

t

on

t

f

Switching Time - I

C

Collector Current  I

C

  [A]

Switching Time  t

SW

  [

µ

s]

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1

10

0

50

100

150

2SD1022

V

CC

 = 50V

I

C

 = 3A

I

B1

 = 3mA

I

B2

 = 3mA

V

BB2

 = 4V

t

s

t

on

t

f

Switching Time - Tc

Case Temperature  Tc  [

°

C]

Switching Time  t

SW

  [

µ

s]

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Transient Thermal Impedance

0.1

1

2SD1022

10

-2

10

-1

10

0

10

1

0.05

0.5

0.2

20

50

5

2

200

500

2000

5000

0.02

0.05

0.5

0.2

20

5

2

0.005

0.002

0.005~10 [ms]

0.005~10 [s]

Time  t  [s, ms]

Transient Thermal Impedance  

θ

jc(t)  [

°

C/W]

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Forward Bias SOA

0.1

1

10

100

2SD1022

250

µ

s

Tc = 25

°

C

Single Pulse

150

µ

s

1ms

10ms

DC

8

Collector-Emitter Voltage  V

CE

  [V]

Collector Current  I

C

  [A]

P

T

 limit

I

S/B

 limit

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0

20

40

60

80

100

0

50

100

150

2SD1022

Collector Current Derating

Collector Current Derating  [%]

V

CE

 = fixed

P

T

 limit

I

S/B

 limit

Case Temperature  Tc  [

°

C]