background image

TZS4678...TZS4717

Vishay Telefunken

Rev. 2, 01-Apr-99

1 (6)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 85613

Silicon Epitaxial Planar Z–Diodes

Features

D

Zener voltage specified at 50 

m

A

D

Maximum delta V

Z

 given from 10 

m

A to 100 

m

A

D

Very high stability

D

Low noise

Applications

Voltage stabilization

96 12009

Absolute Maximum Ratings

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Power dissipation

R

thJA

x

300K/W

P

V

500

mW

Z–current

I

Z

P

V

/V

Z

mA

Junction temperature

T

j

175

°

C

Storage temperature range

T

stg

–65...+175

°

C

Maximum Thermal Resistance

T

j

 = 25

_

C

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient

on PC board 50mmx50mmx1.6mm

R

thJA

500

K/W

Electrical Characteristics

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

I

F

=100mA

V

F

1.5

V

background image

TZS4678...TZS4717

Vishay Telefunken

Rev. 2, 01-Apr-99

2 (6)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number85613

Type 

1)

Zener Voltage V

Z

 @ I

Z

 = 50

m

A

Max.

Reverse

Current

Test

Voltage

Max.

Zener 

Current

Max.

Voltage

Change

Typ. 

 1)

Min.

Max.

I

R

 

3)

V

R

 

3)

I

ZM

 

2)

D

V

Z

 

4)

V

V

V

m

A

V

mA

V

TZS4678

1.8

1.710

1.890

7.5

1.0

120

0.70

TZS4679

2.0

1.900

2.100

5.0

1.0

110

0.70

TZS4680

2.2

2.090

2.310

4.0

1.0

100

0.75

TZS4681

2.4

2.280

2.520

2.0

1.0

95

0.80

TZS4682

2.7

2.565

2.835

1.0

1.0

90

0.85

TZS4683

3.0

2.850

3.150

0.8

1.0

85

0.90

TZS4684

3.3

3.135

3.465

7.5

1.5

80

0.95

TZS4685

3.6

3.420

3.780

7.5

2.0

75

0.95

TZS4686

3.9

3.705

4.095

5.0

2.0

70

0.97

TZS4687

4.3

4.085

4.515

4.0

2.0

65

0.99

TZS4688

4.7

4.465

4.935

10

3.0

60

0.99

TZS4689

5.1

4.845

5.355

10

3.0

55

0.97

TZS4690

5.6

5.320

5.880

10

4.0

50

0.96

TZS4691

6.2

5.890

6.510

10

5.0

45

0.95

TZS4692

6.8

6.460

7.140

10

5.1

35

0.90

TZS4693

7.5

7.125

7.875

10

5.7

31.8

0.75

TZS4694

8.2

7.790

8.610

1.0

6.2

29.0

0.50

TZS4695

8.7

8.265

9.135

1.0

6.6

27.4

0.10

TZS4696

9.1

8.645

9.555

1.0

6.9

26.2

0.08

TZS4697

10

9.500

10.50

1.0

7.6

24.8

0.10

TZS4698

11

10.45

11.55

0,05

8.4

21.6

0.11

TZS4699

12

11.40

12.60

0.05

9.1

20.4

0.12

TZS4700

13

12.35

13.65

0.05

9.8

19.0

0.13

TZS4701

14

13.30

14.70

0.05

10.6

17.5

0.14

TZS4702

15

14.25

15.75

0.05

11.4

16.3

0.15

TZS4703

16

15.20

16.80

0.05

12.1

15.4

0.16

TZS4704

17

16.15

17.85

0.05

12.9

14.5

0.17

TZS4705

18

17.10

18.90

0.05

13.6

13.2

0.18

TZS4706

19

18.05

19.95

0.05

14.4

12.5

0.19

TZS4707

20

19.00

21.00

0.01

15.2

11.9

0.20

TZS4708

22

20.90

23.10

0.01

16.7

10.8

0.22

TZS4709

24

22.80

25.20

0.01

18.2

9.9

0.24

TZS4710

25

23.75

26.25

0.01

19.0

9.5

0.25

TZS4711

27

25.65

28.35

0.01

20.4

8.8

0.27

TZS4712

28

26.60

29.40

0.01

21.2

8.5

0.28

TZS4713

30

28.50

31.50

0.01

22.8

7.9

0.30

TZS4714

33

31.35

34.65

0.01

25.0

7.2

0.33

TZS4715

36

34.20

37.80

0.01

27.3

6.6

0.36

TZS4716

39

37.05

40.95

0.01

29.6

6.1

0.39

TZS4717

43

40.85

45.15

0.01

32.6

5.5

0.43

background image

TZS4678...TZS4717

Vishay Telefunken

Rev. 2, 01-Apr-99

3 (6)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 85613

1.) Toleranzing and voltage designation (V

Z

). 

      The type numbers shown have a standard tolerance of 

±

 5% on the nominal zener voltage. 

2.) Maximum zener current ratings (I

ZM

). 

     Maximum zener current ratings are based on maximum zener voltage of the individual units. 

3.) Reverse leakage current (I

R

).

     Reverse leakage currents are guaranteed and measured at V

R

 as shown on the table. 

4.) Maximum voltage change (

D

V

Z

).

     Voltage change is equal to the difference between V

Z

 at 100

m

A and V

Z

 at 10

m

A.

Characteristics  (T

j

 = 25

_

C unless otherwise specified)

0

40

80

120

160

0

100

300

400

500

600

P

     – 

T

otal Power Dissipation ( mW

 )

tot

T

amb

 – Ambient Temperature ( 

°

C )

200

95 9602

200

Figure 1.  Total Power Dissipation vs. 

Ambient Temperature

0

5

10

15

20

1

10

100

1000

V

   – 

V

oltage 

Change 

mV

 )

Z

V

Z

 – Z-Voltage ( V )

25

95 9598

D

I

Z

=5mA

T

j

= 25

°

C

Figure 2.  Typical Change of Working Voltage under 

Operating Conditions at T

amb

=25

°

C

–60

0

60

120

180

0.8

0.9

1.0

1.1

1.2

1.3

V

      – Relative 

V

oltage 

Change

Ztn

T

j

 – Junction Temperature ( 

°

C )

240

95 9599

V

Ztn

=V

Zt

/V

Z

(25

°

C)

TK

VZ

=10

 10

–4

/K

8

 10

–4

/K

–4

 10

–4

/K

6

 10

–4

/K

4

 10

–4

/K

2

 10

–4

/K

–2

 10

–4

/K

0

Figure 3.  Typical Change of Working Voltage vs. 

Junction Temperature

0

10

20

30

–5

0

5

10

15

TK     – 

T

emperature 

Coef

ficient of 

V

   ( 10    /K 

)

VZ

V

Z

 – Z-Voltage ( V )

50

95 9600

40

Z

–4

I

Z

=5mA

Figure 4.  Temperature Coefficient of Vz vs. 

Z–Voltage

background image

TZS4678...TZS4717

Vishay Telefunken

Rev. 2, 01-Apr-99

4 (6)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number85613

0

5

10

15

0

50

100

150

200

C   – Diode Capacitance ( pF )

D

V

Z

 – Z-Voltage ( V )

25

95 9601

20

T

j

= 25

°

C

V

R

= 2V

Figure 5.  Diode Capacitance vs. 

Z–Voltage 

0

0.2

0.4

0.6

0.8

0.001

0.01

0.1

1

10

100

1.0

95 9605

I   – Forward Current ( mA

 )

F

V

F

 – Forward Voltage ( V )

T

j

= 25

°

C

Figure 6.  Forward Current vs. Forward Voltage

0

4

8

12

16

20

95 9604

0

20

40

60

80

100

I   – Z-Current ( mA

 )

Z

V

Z

 – Z-Voltage ( V )

P

tot

=500mW

T

amb

=25

°

C

Figure 7.  Z–Current vs. Z–Voltage

15

20

25

30

0

10

20

30

40

50

I   – Z-Current ( mA

 )

Z

V

Z

 – Z-Voltage ( V )

35

95 9607

P

tot

=500mW

T

amb

=25

°

C

Figure 8.  Z–Current vs. Z–Voltage

0

5

10

15

20

1

10

100

1000

r   – Dif

ferential Z-Resistance (    )

Z

V

Z

 – Z-Voltage ( V )

25

95 9606

W

T

j

= 25

°

C

I

Z

=1mA

5mA

10mA

Figure 9.  Differential Z–Resistance 

vs. Z–Voltage

background image

TZS4678...TZS4717

Vishay Telefunken

Rev. 2, 01-Apr-99

5 (6)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 85613

1

10

100

1000

Z     – 

Thermal Resistance for Pulse Cond. (K/W)

thp

t

p

 – Pulse Length ( ms )

95 9603

10

–1

10

0

10

1

10

2

t

p

/T=0.5

t

p

/T=0.2

t

p

/T=0.1

t

p

/T=0.05

t

p

/T=0.02

t

p

/T=0.01

Single Pulse

R

thJA

=300K/W

DT=T

jmax

–T

amb

i

ZM

=(–V

Z

+(V

Z

2

+4r

zj

DT/Z

thp

)

1/2

)/(2r

zj

)

Figure 10.  Thermal Response

Dimensions in mm

96 12071

background image

TZS4678...TZS4717

Vishay Telefunken

Rev. 2, 01-Apr-99

6 (6)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number85613

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423