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Document Number 85614

Silicon Epitaxial Planar Z–Diodes

Features

D

Very sharp reverse characteristic

D

Low reverse current level

D

Very high stability

D

Low noise

D

Available with tighter tolerances

Applications

Voltage stabilization

94 9367

Absolute Maximum Ratings

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Power dissipation

l=4mm, T

L

=25

°

C

P

V

500

mW

Z–current

I

Z

P

V

/V

Z

mA

Junction temperature

T

j

175

°

C

Storage temperature range

T

stg

–65...+175

°

C

Maximum Thermal Resistance

T

j

 = 25

_

C

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient

l=4mm, T

L

=constant

R

thJA

300

K/W

Electrical Characteristics

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

I

F

=200mA

V

F

1.5

V

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Document Number 85614

Type

V

Zmin.

V

Zmax.

Type

V

Zmin.

V

Zmax.

r

Zmax.

at I

Z

I

Rmax.

at V

R

(V)

(V)

(V)

(V)

(

W

)

(mA)

(

m

A)

(V)

TZX2V4

2.3

2.6

TZX2V4A

2.3

2.5

100

5

5

0.5

TZX2V4

2.3

2.6

TZX2V4B

2.4

2.6

100

5

5

0.5

TZX2V7

2.5

2.9

TZX2V7A

2.5

2.7

100

5

5

0.5

TZX2V7

2.5

2.9

TZX2V7B

2.6

2.8

100

5

5

0.5

TZX2V7

2.5

2.9

TZX2V7C

2.7

2.9

100

5

5

0.5

TZX3V0

2.8

3.2

TZX3V0A

2.8

3.0

100

5

5

0.5

TZX3V0

2.8

3.2

TZX3V0B

2.9

3.1

100

5

5

0.5

TZX3V0

2.8

3.2

TZX3V0C

3.0

3.2

100

5

5

0.5

TZX3V3

3.1

3.5

TZX3V3A

3.1

3.3

100

5

5

1

TZX3V3

3.1

3.5

TZX3V3B

3.2

3.4

100

5

5

1

TZX3V3

3.1

3.5

TZX3V3C

3.3

3.5

100

5

5

1

TZX3V6

3.4

3.8

TZX3V6A

3.4

3.6

100

5

5

1

TZX3V6

3.4

3.8

TZX3V6B

3.5

3.7

100

5

5

1

TZX3V6

3.4

3.8

TZX3V6C

3.6

3.8

100

5

5

1

TZX3V9

3.7

4.1

TZX3V9A

3.7

3.9

100

5

5

1

TZX3V9

3.7

4.1

TZX3V9B

3.8

4.0

100

5

5

1

TZX3V9

3.7

4.1

TZX3V9C

3.9

4.1

100

5

5

1

TZX4V3

4.0

4.5

TZX4V3A

4.0

4.2

100

5

5

1.5

TZX4V3

4.0

4.5

TZX4V3B

4.1

4.3

100

5

5

1.5

TZX4V3

4.0

4.5

TZX4V3C

4.2

4.4

100

5

5

1.5

TZX4V3

4.0

4.5

TZX4V3D

4.3

4.5

100

5

5

1.5

TZX4V7

4.4

4.9

TZX4V7A

4.4

4.6

100

5

5

2

TZX4V7

4.4

4.9

TZX4V7B

4.5

4.7

100

5

5

2

TZX4V7

4.4

4.9

TZX4V7C

4.6

4.8

100

5

5

2

TZX4V7

4.4

4.9

TZX4V7D

4.7

4.9

100

5

5

2

TZX5V1

4.8

5.3

TZX5V1A

4.8

5.0

100

5

5

2

TZX5V1

4.8

5.3

TZX5V1B

4.9

5.1

100

5

5

2

TZX5V1

4.8

5.3

TZX5V1C

5.0

5.2

100

5

5

2

TZX5V1

4.8

5.3

TZX5V1D

5.1

5.3

100

5

5

2

TZX5V6

5.2

5.9

TZX5V6A

5.2

5.5

40

5

5

2

TZX5V6

5.2

5.9

TZX5V6B

5.3

5.6

40

5

5

2

TZX5V6

5.2

5.9

TZX5V6C

5.4

5.7

40

5

5

2

TZX5V6

5.2

5.9

TZX5V6D

5.5

5.8

40

5

5

2

TZX5V6

5.2

5.9

TZX5V6E

5.6

5.9

40

5

5

2

TZX6V2

5.7

6.6

TZX6V2A

5.7

6.0

15

5

1

3

TZX6V2

5.7

6.6

TZX6V2B

5.8

6.1

15

5

1

3

TZX6V2

5.7

6.6

TZX6V2C

6.0

6.3

15

5

1

3

TZX6V2

5.7

6.6

TZX6V2D

6.1

6.4

15

5

1

3

TZX6V2

5.7

6.6

TZX6V2E

6.3

6.6

15

5

1

3

TZX6V8

6.4

7.2

TZX6V8A

6.4

6.7

15

5

1

3.5

TZX6V8

6.4

7.2

TZX6V8B

6.6

6.9

15

5

1

3.5

TZX6V8

6.4

7.2

TZX6V8C

6.7

7.0

15

5

1

3.5

TZX6V8

6.4

7.2

TZX6V8D

6.9

7.2

15

5

1

3.5

TZX7V5

7.0

7.9

TZX7V5A

7.0

7.3

15

5

1

5.0

TZX7V5

7.0

7.9

TZX7V5B

7.2

7.6

15

5

1

5.0

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Document Number 85614

Type

V

Zmin.

V

Zmax.

Type

V

Zmin.

V

Zmax.

r

Zmax.

at I

Z

I

Rmax.

at V

R

(V)

(V)

(V)

(V)

(

W

)

(mA)

(

m

A)

(V)

TZX7V5

7.0

7.9

TZX7V5C

7.3

7.7

15

5

1

5.0

TZX7V5

7.0

7.9

TZX7V5D

7.5

7.9

15

5

1

5.0

TZX8V2

7.7

8.7

TZX8V2A

7.7

8.1

20

5

1

6.2

TZX8V2

7.7

8.7

TZX8V2B

7.9

8.3

20

5

1

6.2

TZX8V2

7.7

8.7

TZX8V2C

8.1

8.5

20

5

1

6.2

TZX8V2

7.7

8.7

TZX8V2D

8.3

8.7

20

5

1

6.2

TZX9V1

8.5

9.7

TZX9V1A

8.5

8.9

20

5

1

6.8

TZX9V1

8.5

9.7

TZX9V1B

8.7

9.1

20

5

1

6.8

TZX9V1

8.5

9.7

TZX9V1C

8.9

9.3

20

5

1

6.8

TZX9V1

8.5

9.7

TZX9V1D

9.1

9.5

20

5

1

6.8

TZX9V1

8.5

9.7

TZX9V1E

9.3

9.7

20

5

1

6.8

TZX10

9.5

10.6

TZX10A

9.5

9.9

25

5

1

7.5

TZX10

9.5

10.6

TZX10B

9.7

10.1

25

5

1

7.5

TZX10

9.5

10.6

TZX10C

9.9

10.3

25

5

1

7.5

TZX10

9.5

10.6

TZX10D

10.2

10.6

25

5

1

7.5

TZX11

10.4

11.6

TZX11A

10.4

10.8

25

5

1

8.2

TZX11

10.4

11.6

TZX11B

10.7

11.1

25

5

1

8.2

TZX11

10.4

11.6

TZX11C

10.9

11.3

25

5

1

8.2

TZX11

10.4

11.6

TZX11D

11.1

11.6

25

5

1

8.2

TZX12

11.4

12.7

TZX12A

11.4

11.9

35

5

1

9.5

TZX12

11.4

12.7

TZX12B

11.6

12.1

35

5

1

9.5

TZX12

11.4

12.7

TZX12C

11.9

12.4

35

5

1

9.5

TZX12

11.4

12.7

TZX12D

12.2

12.7

35

5

1

9.5

TZX13

12.4

13.4

TZX13A

12.4

12.9

35

5

1

10

TZX13

12.4

13.4

TZX13B

12.6

13.1

35

5

1

10

TZX13

12.4

13.4

TZX13C

12.9

13.4

35

5

1

10

TZX14

13.2

14.3

TZX14A

13.2

13.7

35

5

1

11

TZX14

13.2

14.3

TZX14B

13.5

14.0

35

5

1

11

TZX14

13.2

14.3

TZX14C

13.8

14.3

35

5

1

11

TZX15

14.1

15.5

TZX15A

14.1

14.7

40

5

1

11.5

TZX15

14.1

15.5

TZX15B

14.5

15.1

40

5

1

11.5

TZX15

14.1

15.5

TZX15C

14.9

15.5

40

5

1

11.5

TZX16

15.3

17.1

TZX16A

15.3

15.9

45

5

1

12

TZX16

15.3

17.1

TZX16B

15.7

16.5

45

5

1

12

TZX16

15.3

17.1

TZX16C

16.3

17.1

45

5

1

12

TZX18

16.9

19.0

TZX18A

16.9

17.7

55

5

1

13

TZX18

16.9

19.0

TZX18B

17.5

18.3

55

5

1

13

TZX18

16.9

19.0

TZX18C

18.1

19.0

55

5

1

13

TZX20

18.8

21.2

TZX20A

18.8

19.7

60

2

1

15

TZX20

18.8

21.2

TZX20B

19.5

20.4

60

2

1

15

TZX20

18.8

21.2

TZX20C

20.2

21.2

60

2

1

15

TZX22

20.9

23.3

TZX22A

20.9

21.9

65

2

1

17

TZX22

20.9

23.3

TZX22B

21.6

22.6

65

2

1

17

TZX22

20.9

23.3

TZX22C

22.3

23.3

65

2

1

17

TZX24

22.9

25.5

TZX24A

22.9

24.0

70

2

1

19

TZX24

22.9

25.5

TZX24B

23.6

24.7

70

2

1

19

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Document Number 85614

Type

V

Zmin.

V

Zmax.

Type

V

Zmin.

V

Zmax.

r

Zmax.

at I

Z

I

Rmax.

at V

R

(V)

(V)

(V)

(V)

(

W

)

(mA)

(

m

A)

(V)

TZX24

22.9

25.5

TZX24C

24.3

25.5

70

2

1

19

TZX27

25.2

28.6

TZX27A

25.2

26.6

80

2

1

21

TZX27

25.2

28.6

TZX27B

26.2

27.6

80

2

1

21

TZX27

25.2

28.6

TZX27C

27.2

28.6

80

2

1

21

TZX30

28.2

31.6

TZX30A

28.2

29.6

100

2

1

23

TZX30

28.2

31.6

TZX30B

29.2

30.6

100

2

1

23

TZX30

28.2

31.6

TZX30C

30.2

31.6

100

2

1

23

TZX33

31.2

34.5

TZX33A

31.2

32.6

120

2

1

25

TZX33

31.2

34.5

TZX33B

32.2

33.6

120

2

1

25

TZX33

31.2

34.5

TZX33C

33.2

34.5

120

2

1

25

TZX36

34.2

38.0

TZX36A

34.2

35.7

140

2

1

27

TZX36

34.2

38.0

TZX36B

35.3

36.8

140

2

1

27

TZX36

34.2

38.0

TZX36C

36.4

38.0

140

2

1

27

Characteristics  (T

j

 = 25

_

C unless otherwise specified)

95 9611

0

5

10

15

0

100

200

300

400

500

20

R       – 

Therm. Resist. Junction / 

Ambient ( K/W

 )

thJA

l – Lead Length ( mm )

l

l

T

L

=constant

Figure 1.  Thermal Resistance vs. Lead Length

0

40

80

120

160

0

100

300

400

500

600

P

     – 

T

otal Power Dissipation ( mW

 )

tot

T

amb

 – Ambient Temperature ( 

°

C )

200

95 9602

200

Figure 2.  Total Power Dissipation vs. 

Ambient Temperature

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0

5

10

15

20

1

10

100

1000

V

   – 

V

oltage 

Change 

mV

 )

Z

V

Z

 – Z-Voltage ( V )

25

95 9598

D

I

Z

=5mA

T

j

= 25

°

C

Figure 3.  Typical Change of Working Voltage under 

Operating Conditions at T

amb

=25

°

C

–60

0

60

120

180

0.8

0.9

1.0

1.1

1.2

1.3

V

      – Relative 

V

oltage 

Change

Ztn

T

j

 – Junction Temperature ( 

°

C )

240

95 9599

V

Ztn

=V

Zt

/V

Z

(25

°

C)

TK

VZ

=10

 10

–4

/K

8

 10

–4

/K

–4

 10

–4

/K

6

 10

–4

/K

4

 10

–4

/K

2

 10

–4

/K

–2

 10

–4

/K

0

Figure 4.  Typical Change of Working Voltage vs.

 Junction Temperature

0

10

20

30

–5

0

5

10

15

TK     – 

T

emperature 

Coef

ficient of 

V

   ( 10    /K 

)

VZ

V

Z

 – Z-Voltage ( V )

50

95 9600

40

Z

–4

I

Z

=5mA

Figure 5.  Temperature Coefficient of Vz vs. 

Z–Voltage

0

5

10

15

0

50

100

150

200

C   – Diode Capacitance ( pF )

D

V

Z

 – Z-Voltage ( V )

25

95 9601

20

T

j

= 25

°

C

V

R

= 2V

Figure 6.  Diode Capacitance vs. 

Z–Voltage

0

0.2

0.4

0.6

0.8

0.001

0.01

0.1

1

10

100

1.0

95 9605

I   – Forward Current ( mA

 )

F

V

F

 – Forward Voltage ( V )

T

j

= 25

°

C

Figure 7.  Forward Current vs. 

Forward Voltage

0

4

8

12

16

20

95 9604

0

20

40

60

80

100

I   – Z-Current ( mA

 )

Z

V

Z

 – Z-Voltage ( V )

P

tot

=500mW

T

amb

=25

°

C

Figure 8.  Z–Current vs. Z–Voltage

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Document Number 85614

15

20

25

30

0

10

20

30

40

50

I   – Z-Current ( mA

 )

Z

V

Z

 – Z-Voltage ( V )

35

95 9607

P

tot

=500mW

T

amb

=25

°

C

Figure 9.  Z–Current vs. Z–Voltage

0

5

10

15

20

1

10

100

1000

r   – Dif

ferential Z-Resistance (    )

Z

V

Z

 – Z-Voltage ( V )

25

95 9606

W

T

j

= 25

°

C

I

Z

=1mA

5mA

10mA

Figure 10.  Differential Z–Resistance vs. Z–Voltage

1

10

100

1000

Z     – 

Thermal Resistance for Pulse Cond. (K/W)

thp

t

p

 – Pulse Length ( ms )

95 9603

10

–1

10

0

10

1

10

2

t

p

/T=0.5

t

p

/T=0.2

t

p

/T=0.1

t

p

/T=0.05

t

p

/T=0.02

t

p

/T=0.01

Single Pulse

R

thJA

=300K/W

DT=T

jmax

–T

amb

i

ZM

=(–V

Z

+(V

Z

2

+4r

zj

DT/Z

thp

)

1/2

)/(2r

zj

)

Figure 11.  Thermal Response

Dimensions in mm

Cathode Identification

 1.7 max.

 0.55 max.

3.9 max.

26 min.

technical drawings

according to DIN

specifications

94 9366

Standard Glass Case

54 A 2  DIN 41880

JEDEC DO 35

Weight max. 0.3 g

26 min.

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Document Number 85614

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating 

systems with respect to their impact on the health and safety of our employees and the public, as well as their 

impact on the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423