background image

BAV100...BAV103

Vishay Telefunken

Rev. 2, 01-Apr-99

1 (4)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 85542

Silicon Epitaxial Planar Diodes

Applications

General purposes

94 9371

Absolute Maximum Ratings

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Repetitive peak reverse voltage

BAV100

V

RRM

60

V

g

BAV101

V

RRM

120

V

BAV102

V

RRM

200

V

BAV103

V

RRM

250

V

Reverse voltage

BAV100

V

R

50

V

g

BAV101

V

R

100

V

BAV102

V

R

150

V

BAV103

V

R

200

V

Peak forward surge current

t

p

=1s

I

FSM

1

A

Repetitive peak forward current

I

FRM

625

mA

Forward current

I

F

250

mA

Power dissipation

P

V

500

mW

Junction temperature

T

j

175

°

C

Storage temperature range

T

stg

–65...+175

°

C

Maximum Thermal Resistance

T

j

 = 25

_

C

Parameter

Test Conditions

Symbol

Value

Unit

Junction lead

R

thJL

350

K/W

Junction ambient

on PC board 50mmx50mmx1.6mm

R

thJA

500

K/W

background image

BAV100...BAV103

Vishay Telefunken

Rev. 2, 01-Apr-99

2 (4)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 85542

Electrical Characteristics

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

I

F

=100mA

V

F

1

V

Reverse current

V

R

=50V

BAV100

I

R

100

nA

V

R

=100V

BAV101

I

R

100

nA

V

R

=150V

BAV102

I

R

100

nA

V

R

=200V

BAV103

I

R

100

nA

T

j

=100

°

C, V

R

= 50V

BAV100

I

R

15

m

A

T

j

=100

°

C, V

R

=100V

BAV101

I

R

15

m

A

T

j

=100

°

C, V

R

=150V

BAV102

I

R

15

m

A

T

j

=100

°

C, V

R

=200V

BAV103

I

R

15

m

A

Breakdown voltage

I

R

=100

m

A, t

p

/T=0.01,

BAV100

V

(BR)

60

V

g

R

m

t

p

=0.3ms

BAV101

V

(BR)

120

V

BAV102

V

(BR)

200

V

BAV103

V

(BR)

250

V

Diode capacitance

V

R

=0, f=1MHz

C

D

1.5

pF

Differential forward

 resistance

I

F

=10mA

r

f

5

W

Reverse recovery time

I

F

=I

R

=30mA, i

R

=3mA,

R

L

=100

W

t

rr

50

ns

Characteristics  (T

j

 = 25

_

C unless otherwise specified)

m

0

40

80

120

160

0.01

0.1

1

10

1000

I   – Reverse Current (   

A

 )

R

T

j

 – Junction Temperature ( 

°

C )

200

94 9084

100

Scattering Limit

V

R

= V

RRM

Figure 1.  Reverse Current vs. Junction Temperature

0

0.4

0.8

1.2

1.6

0.1

1

10

100

1000

I   – Forward Current ( mA

 )

F

V

F

 – Forward Voltage ( V )

2.0

94 9085

Scattering Limit

T

j

= 25

°

C

Figure 2.  Forward Current vs. Forward Voltage

background image

BAV100...BAV103

Vishay Telefunken

Rev. 2, 01-Apr-99

3 (4)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 85542

0.1

1

10

1

10

100

1000

r   – Dif

ferential Forward Resistance (    )

f

I

F

 – Forward Current ( mA )

100

94 9089

W

T

j

= 25

°

C

Figure 3.  Differential Forward Resistance vs.

 Forward Current

Dimensions in mm

96 12070

background image

BAV100...BAV103

Vishay Telefunken

Rev. 2, 01-Apr-99

4 (4)

www.vishay.de 

FaxBack +1-408-970-5600

Document Number 85542

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known

as ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized

application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out

of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or

unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423