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BAS81...BAS83

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Rev. 3, 01-Apr-99

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Document Number 85509

Schottky Barrier Diodes

Features

D

Integrated protection ring against static dis-

charge

D

Low capacitance

D

Low leakage current

D

Low forward voltage drop

D

Very low switching time

Applications

HF–Detector 

Protection circuit 

Diode for low currents with a low supply voltage 

Small battery charger 

Power supplies 

DC / DC converter for notebooks

94 9371

Absolute Maximum Ratings

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Reverse voltage

BAS81

V

R

40

V

g

BAS82

V

R

50

V

BAS83

V

R

60

V

Peak forward surge current

t

p

=1s

I

FSM

500

mA

Repetitive peak forward current

I

FRM

150

mA

Forward current

I

F

30

mA

Junction temperature

T

j

125

°

C

Storage temperature range

T

stg

–65...+150

°

C

Maximum Thermal Resistance

T

j

 = 25

_

C

Parameter

Test Conditions

Symbol

Value

Unit

Junction ambient

on PC board 50mmx50mmx1.6mm

R

thJA

320

K/W

Electrical Characteristics

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

I

F

=0.1mA

V

F

330

mV

g

I

F

=1mA

V

F

410

mV

I

F

=15mA

V

F

1

V

Reverse current

V

R

=V

Rmax

I

R

200

nA

Diode capacitance

V

R

=1V, f=1MHz

C

D

1.6

pF

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Document Number 85509

Characteristics  (T

j

 = 25

_

C unless otherwise specified)

0

2

4

6

8

10

12

14

25

50

75

100

125

150

T

j

 – Junction Temperature ( 

°

C )

15794

V

R

 = 60 V

P

   – Reverse Power Dissipation ( mW

 )

R

540K/W

P

R

–Limit

@100%V

R

P

R

–Limit

@80%V

R

R

thJA

=

Figure 1.  Max. Reverse Power Dissipation vs. Junction

Temperature

0.1

1.0

10.0

100.0

1000.0

25

50

75

100

125

150

0.1

1.0

10.0

100.0

1000.0

25

50

75

100

125

150

T

j

 – Junction Temperature ( 

°

C )

15795

V

R

 = V

RRM

m

I   – Reverse Current (   

A

 )

R

Figure 2.  Reverse Current vs. Junction Temperature

0

0.5

1.0

1.5

2.0

I    – Forward Current ( 

A

 )

V

F

 – Forward Voltage ( V )

15796

F

T

j

= 25

°

C

T

j

= 150

°

C

0.1

1

10

100

1000

0.01

Figure 3.  Forward Current vs. Forward Voltage

0

0.2

0.4

0.6

0.8

1.0

1.2

1.4

1.6

1.8

2.0

0.1

1.0

10.0

100.0

V

R

 – Reverse Voltage ( V )

15797

C   – Diode Capacitance ( pF )

D

f=1MHz

Figure 4.  Diode Capacitance vs. Reverse Voltage

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BAS81...BAS83

Vishay Telefunken

Rev. 3, 01-Apr-99

3 (4)

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Document Number 85509

Dimensions in mm

96 12070

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BAS81...BAS83

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Document Number 85509

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known

as ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use

of ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer

application by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized

application, the buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out

of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or

unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423