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BYS10

Vishay Telefunken

www.vishay.de 

 FaxBack +1-408-970-5600

Rev. 2, 24-Jun-98

1 (4)

Document Number 86013

Schottky Barrier Rectifier

Features

D

High efficiency

D

Low power losses

D

Very low switching losses

D

Low reverse current

D

High surge capability

Applications

Polarity protection 

Low voltage, high frequency rectifiers

15 811

Absolute Maximum Ratings

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Value

Unit

Reverse voltage

BYS10–25

V

R

25

V

g

=Repetitive peak reverse voltage

BYS10–35

R

=V

RRM

35

V

BYS10–45

45

V

Peak forward surge current

t

p

=10ms, half sinewave

I

FSM

30

A

Average forward current

I

FAV

1.5

A

Junction and storage 

temperature range

T

j

=T

stg

–55...+150

°

C

Maximum Thermal Resistance

T

j

 = 25

_

C

Parameter

Test Conditions

Symbol

Value

Unit

Junction lead

T

L

=constant

R

thJL

25

K/W

Junction ambient

mounted on epoxy–glass hard tissue

R

thJA

150

K/W

mounted on epoxy–glass hard tissue, 50mm

2

 35

m

m Cu

R

thJA

125

K/W

mounted on Al–oxid–ceramic (Al

2

O

3

), 50mm

2

 35

m

m Cu

R

thJA

100

K/W

Electrical Characteristics

T

j

 = 25

_

C

Parameter

Test Conditions

Type

Symbol

Min

Typ

Max

Unit

Forward voltage

I

F

=1A

V

F

500

mV

Reverse current

V

R

=V

RRM

I

R

500

m

A

V

R

=V

RRM

, T

j

=100

°

C

I

R

10

mA

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Rev. 2, 24-Jun-98

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Document Number 86013

Characteristics  (T

j

 = 25

_

C unless otherwise specified)

0

40

80

120

160

0

1

2

3

4

7

200

95 9710

P

   – Maximum Reverse Power Dissipation ( 

W

 )

R

T

j

 – Junction Temperature ( 

°

C )

5

6

BYS10-25

BYS10-35

BYS10-45

R

thJA

=100K/W

R

thJA

=25K/W

Figure 1.  Max. Reverse Power Dissipation vs. 

Junction Temperature

0

40

80

120

160

0.1

1

10

100

1000

200

95 9711

I   – Reverse Current ( mA

 )

R

T

j

 – Junction Temperature ( 

°

C )

V

R

= V

R RM

Figure 2.  Max. Reverse Current vs. 

Junction Temperature

0

0

0.4

0.8

1.2

1.6

2.0

I      – 

A

verage 

Forward 

Current 

A

 )

FA

V

T

amb

 – Ambient Temperature ( 

°

C )

95 9712

40

80

120

160

200

V

R

= V

R RM

, Half Sinewave, R

thJA

=25K/W

BYS10-25

BYS10-35

BYS10-45

Figure 3.  Max. Average Forward Current vs. 

Ambient Temperature

0

0

0.4

0.8

1.2

1.6

2.0

I      – 

A

verage 

Forward 

Current 

A

 )

FA

V

T

amb

 – Ambient Temperature ( 

°

C )

95 9713

40

80

120

160

200

V

R

= 0 V, Half Sinewave

100K/W

125K/W

150K/W

R

thJA

=25K/W

Figure 4.  Max. Average Forward Current vs. 

Ambient Temperature

0

0.4

0.8

1.2

1.6

0.01

0.1

1

10

100

2.0

95 9714

I   – Forward Current ( 

A

 )

F

V

F

 – Forward Voltage ( V )

T

j

= 25

°

C

T

j

= 150

°

C

Figure 5.  Max. Forward Current vs. Forward Voltage 

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Vishay Telefunken

www.vishay.de 

 FaxBack +1-408-970-5600

Rev. 2, 24-Jun-98

3 (4)

Document Number 86013

Dimensions in mm

14275

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BYS10

Vishay Telefunken

www.vishay.de 

 FaxBack +1-408-970-5600

Rev. 2, 24-Jun-98

4 (4)

Document Number 86013

Ozone Depleting Substances Policy Statement

It is the policy of Vishay Semiconductor GmbH to

1. Meet all present and future national and international statutory requirements.

2. Regularly and continuously improve the performance of our products, processes, distribution and operating

systems

with respect to their impact on the health and safety of our employees and the public, as well as their impact on

the environment.

It is particular concern to control or eliminate releases of those substances into the atmosphere which are known as

ozone depleting substances ( ODSs ).

The Montreal Protocol ( 1987 ) and its London Amendments ( 1990 ) intend to severely restrict the use of ODSs and

forbid their use within the next ten years. Various national and international initiatives are pressing for an earlier ban

on these substances.

Vishay Semiconductor GmbH has been able to use its policy of continuous improvements to eliminate the use of

ODSs listed in the following documents.

1. Annex A, B and list of transitional substances of the Montreal Protocol and the London Amendments respectively

2 . Class I and II ozone depleting substances in the Clean Air Act Amendments of 1990 by the Environmental

Protection Agency ( EPA ) in the USA

3. Council Decision 88/540/EEC and 91/690/EEC Annex A, B and C ( transitional substances ) respectively.

Vishay Semiconductor GmbH can certify that our semiconductors are not manufactured with ozone depleting

substances and do not contain such substances.

We reserve the right to make changes to improve technical design and may do so without further notice.

Parameters can vary in different applications. All operating parameters must be validated for each customer application

by the customer. Should the buyer use Vishay-Telefunken products for any unintended or unauthorized application, the

buyer shall indemnify Vishay-Telefunken against all claims, costs, damages, and expenses, arising out of, directly or

indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use.

Vishay Semiconductor GmbH, P.O.B. 3535, D-74025 Heilbronn, Germany

Telephone: 49 ( 0 ) 7131 67 2831, Fax number: 49 ( 0 ) 7131 67 2423